Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 21, 11 October 1984
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Volume 20, Issue 21
11 October 1984
Spectral characteristics of a DFB laser under high-speed direct modulation
- Author(s): G. Motosugi ; Y. Yoshikuni ; Y. Itaya
- Source: Electronics Letters, Volume 20, Issue 21, p. 849 –850
- DOI: 10.1049/el:19840576
- Type: Article
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Characteristics of a DFB laser under high-speed direct modulation are studied with an emphasis on the spectral analysis. A stable single-longitudinal-mode oscillation was confirmed up to 8.4 GHz direct modulation. The possibility of reducing the frequency chirping by device parameter optimisation is predicted on the basis of the experimental results obtained.
CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD
- Author(s): R. Blondeau ; M. Razeghi ; M. Krakowski ; G. Vilain ; B. de Cremoux ; J.P. Duchemin
- Source: Electronics Letters, Volume 20, Issue 21, p. 850 –851
- DOI: 10.1049/el:19840577
- Type: Article
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A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 μm and fabricated on material grown entirely by LP-MOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.
Hot electron spectroscopy
- Author(s): J.R. Hayes ; A.F.J. Levi ; W. Wiegmann
- Source: Electronics Letters, Volume 20, Issue 21, p. 851 –852
- DOI: 10.1049/el:19840578
- Type: Article
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Using a modified GaAs planar doped barrier transistor, grown by MBE, we are able to determine the nonequilibrium distribution function of hot electrons arriving at the base/collector junction. Knowledge of the electron distribution allows one to determine the physical processes necessary for the understanding of hot electron transport which assumes prominence as device dimensions decrease.
Class of recursive sequential regression algorithms
- Author(s): T. Murali and B.V. Rao
- Source: Electronics Letters, Volume 20, Issue 21, p. 852 –854
- DOI: 10.1049/el:19840579
- Type: Article
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A class of sequential regression algorithms for recursive or infinite impulse response (IIR) adaptive filters is discussed. Results using these algorithms are given for an all-pole and a pole-zero example.
Novel multilayer modulation doped (Al,Ga)As/GaAs structures for self-aligned gate FETs
- Author(s): N.C. Cirillo ; A. Fraasch ; H. Lee ; L.F. Eastman ; M.S. Shur ; S. Baier
- Source: Electronics Letters, Volume 20, Issue 21, p. 854 –855
- DOI: 10.1049/el:19840580
- Type: Article
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The fabrication of self-aligned gate by ion implantation modulation doped (Al,Ga)As/GaAs field effect transistors (MODFETs) utilising a novel multilayer structure capable of withstanding the high-temperature furnace anneals required for Si implant activation is reported. Typical measured extrinsic transconductances of 175 mS/mm at 300 K and 290 mS/mm at 77 K were achieved on 1.1 μm-gate-length devices. Values of the two-dimensional electron gas saturation velocity of 1.9×107 cm/s at 300 K and 2.7×107 cm/s at 77 K were obtained from an analysis of the FET drain current/voltage characteristics using the charge-control model.
Low-threshold high-speed 1.55 μm vapour phase transported buried heterostructure lasers (VPTBH)
- Author(s): T.L. Koch ; L.A. Coldren ; T.J. Bridges ; E.G. Burkhardt ; P.J. Corvini ; B.I. Miller ; D.P. Wilt
- Source: Electronics Letters, Volume 20, Issue 21, p. 856 –857
- DOI: 10.1049/el:19840581
- Type: Article
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A new 1.55 μm InGaAsP buried heterostructure laser has been fabricated using a hydride vapour phase epitaxial regrowth technique. Thresholds as low as 15 mA have been obtained. In addition, improved high-frequency modulation characteristics have been observed resulting from the lowdoped VPE transported material, with 3 dB detected bandwidths out to ∼4.5 GHz.
Low threshold and low dispersion MOCVD/LPE buried-heterostructure GaAs/GaAlAs lasers
- Author(s): F. Brillouet ; J. Riou ; M. Trotte ; R. Azoulay ; L. Dugrand
- Source: Electronics Letters, Volume 20, Issue 21, p. 857 –859
- DOI: 10.1049/el:19840582
- Type: Article
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We report on the first MOCVD/LPE buried-heterostructure lasers realised using a simple LPE burying process, leading to low thresholds and little dispersion in device characteristics.
Improved theoretical formula for the relationship between rain attenuation and depolarisation
- Author(s): H. Fukuchi ; J. Awaka ; T. Oguchi
- Source: Electronics Letters, Volume 20, Issue 21, p. 859 –860
- DOI: 10.1049/el:19840583
- Type: Article
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The theoretical formula for the relationship between rain attenuation and depolarisation proposed by Nowland et al. is improved by calculating the forward-scattering amplitudes of the Pruppacher–Pitter type raindrops at 22 frequencies from 10 to 40 GHz. The dependence of the relation on frequency and on raindrop-size distributions is discussed.
Heavy metal fluoride glasses with low intrinsic Rayleigh scattering
- Author(s): J. Schroeder ; V. Tsoukala ; C.O. Staller ; M.A. Stiller ; A. Bruce ; C.T. Moynihan ; J.J. Hutta ; M.J. Suscavage ; M. Drexhage
- Source: Electronics Letters, Volume 20, Issue 21, p. 860 –862
- DOI: 10.1049/el:19840584
- Type: Article
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The results of Rayleigh light scattering measurements in bulk multicomponent fluorozirconate glasses are described. We observe for the first time that such materials may be reproducibly prepared with uniformly low scattering levels throughout their volume. In 13 of the 15 specimens studied, the magnitude of the Rayleigh scattering loss was one-third to one-half that typically observed in fused silica glass.
Modified state-space filter realisation
- Author(s): E.J.P. May and H.H. Mehdi
- Source: Electronics Letters, Volume 20, Issue 21, p. 862 –863
- DOI: 10.1049/el:19840585
- Type: Article
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An active second-order bandpass filter section is derived from the state-space realisation known as the symmetric-form filter and has the same F-matrix. It is shown that this new filter section is similar to the symmetric filter insofar as it has practically the same sensitivities of ‘Ωp’ and ‘Q’ and has certain advantages over the symmetric filter.
Processing of unipolar diodes with electron beams
- Author(s): G.B. McMillan ; J.M. Shannon ; H. Ahmed
- Source: Electronics Letters, Volume 20, Issue 21, p. 863 –865
- DOI: 10.1049/el:19840586
- Type: Article
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Low-energy ion implantation and multiple-scan electron-beam annealing have been used to produce bulk unipolar camel diodes and Schottky diodes with a range of barrier heights. Optimisation of results required precise doping and diffusion control.
GaAs field effect transistors prepared on lattice-mismatched InP substrates for monolithic optoelectronic integration
- Author(s): C.Y. Chen ; A. Antreasyan ; A.Y. Cho ; P.A. Garbinski
- Source: Electronics Letters, Volume 20, Issue 21, p. 865 –866
- DOI: 10.1049/el:19840587
- Type: Article
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We demonstrate for the first time a depletion mode field effect transistor fabricated on GaAs which is grown on top of a lattice-mismatched InP substrate by molecular beam epitaxy. This structure looks promising for the monolithic integration of metal-semiconductor field effect transistors (MESFETs) with photoconductive detectors and other optoelectronic devices. We observe an orientation-dependent surface conductance property. Preliminary experiments reveal a transconductance of about 20 mS/mm.
Modification of Schwarz approximation
- Author(s): C.P. Therapos
- Source: Electronics Letters, Volume 20, Issue 21, p. 866 –868
- DOI: 10.1049/el:19840588
- Type: Article
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The state-space Schwarz approximation method is modified so that the original and the derived reduced model have an identical combination of their first time moments and Markov parameters. The proposed modification is in fact a state-space formulation of a frequency-domain method, which has appeared in previous publications.
Interpretation of C/V characteristics for heterojunctions and high-low junctions
- Author(s): E.H. Rhoderick
- Source: Electronics Letters, Volume 20, Issue 21, p. 868 –869
- DOI: 10.1049/el:19840589
- Type: Article
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Useful information about the interface can be obtained for heterojunctions or high-low junctions by simple inspection of the graphs of C−2 against V. The distance between the intercepts of the two linear portions of the graph on the voltage axis is simply related to the doping densities and the interface charge.
Analysis of the spectral linewidth of distributed feedback laser diodes
- Author(s): K. Kojima and K. Kyuma
- Source: Electronics Letters, Volume 20, Issue 21, p. 869 –871
- DOI: 10.1049/el:19840590
- Type: Article
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The spectral linewidth of DFB laser diodes is analysed. DFB lasers with long cavities are shown to have very narrow spectral linewidth, and it is further narrowed if a phase shift is introduced at the centre of the cavities.
Interference canceller for a single-wavelength bidirectional optical-fibre link
- Author(s): D.H. Rice and G.E. Keiser
- Source: Electronics Letters, Volume 20, Issue 21, p. 871 –872
- DOI: 10.1049/el:19840591
- Type: Article
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A simple and practical electronic technique is presented that provides interchannel-crosstalk isolation to better than a 10−9 BER for a 20 Mbit/s single-wavelength single-fibre full-duplex transmission system.
Effect of As4/Ga flux ratio on electrical properties of NID GaAs layers grown by MBE
- Author(s): A. Saletes ; J. Massies ; G. Neu ; J.P. Contour
- Source: Electronics Letters, Volume 20, Issue 21, p. 872 –874
- DOI: 10.1049/el:19840592
- Type: Article
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The effect of the As4/Ga flux ratio R on NID GaAs layers has been studied when the MBE growth chamber is used without baking after reloading the arsenic cells, in order to increase the productivity of the system. In these conditions a change from p- to n-type is observed when R is varied from 1.8 to 14. Satisfactory p-type material is obtained at R ≤ 3 (p = 2.0 × 1014 cm−3, μ77 K = 6200 cm2 V−1 s−1). The maximum n-type mobility occurs at R = 5.8. Photoluminescence spectroscopy confirms the effect of R on the incorporation of residual impurities.
Novel calcium-doped yttrium-iron-garnet thermistor bolometer in a planar and continuous bridge configuration
- Author(s): A. D'Amico ; P. de Gasperis ; F. Giannini ; V. Parisi
- Source: Electronics Letters, Volume 20, Issue 21, p. 874 –875
- DOI: 10.1049/el:19840593
- Type: Article
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A new material, calcium-doped-yttrium iron garnet (Ca:YIG), which proves very promising in room-temperature thermistor bolometer applications, has been used to construct a continuous planar bridge structure which works as a thermistor bolometer detector (YIGTB). Experimental results concerning the electrical response of the bridge as a function of the position of the incident laser light beam are in perfect agreement with those predicted by computer simulation. Since the Ca:YIG has a relatively low thermal capacity and is highly adsorbing from the visible to the infra-red, YIGTB has proved highly responsive and faster than other commercial thermistors.
Single-chip baseband waveform generator CMOS-LSI for quadrature-type GMSK modulator
- Author(s): H. Suzuki ; Y. Yamao ; K. Momma
- Source: Electronics Letters, Volume 20, Issue 21, p. 875 –876
- DOI: 10.1049/el:19840594
- Type: Article
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A single-chip baseband waveform generator CMOS-LSI has been fabricated for use in the quadrature-type GMSK modulator, which is suitable for application to digital mobile communications. The LSI employs digital signal processing in realising such functions as Gaussian baseband filtering and phase integration. Digital/analogue convertors and auxiliary circuits, such as an internal-clock generator and carrier frequency adjuster, are also integrated onto the same chip. The LSI operates well below a bit rate of 110 Kbit/s when the power supply voltage is 5 V.
Inexpensive short-range microwave telemetry transponder
- Author(s): K.D. Stephan and T. Itoh
- Source: Electronics Letters, Volume 20, Issue 21, p. 877 –878
- DOI: 10.1049/el:19840595
- Type: Article
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A microwave transponder is described which is suitable for short-range telemetry applications requiring an inexpensive transmitter. Two antiparallel beam-lead diodes at the terminals of a bow-tie antenna produce double-sideband suppressed-carrier modulation centred about the second harmonic of an externally supplied fundamental carrier. A simple theory predicting performance of the device is confirmed by experiment.
Error-free external modulation of a single-frequency injection laser at 1.5 Gbit/s using a Ti:LiNbO3 waveguide switch
- Author(s): S.K. Korotky ; G. Eisenstein ; B.L. Kasper ; R.C. Alferness ; J.J. Veselka ; L.L. Buhl
- Source: Electronics Letters, Volume 20, Issue 21, p. 878 –879
- DOI: 10.1049/el:19840596
- Type: Article
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We have used a packaged high-speed Ti:LiNbO3 directional coupler switch to externally modulate a CW-operated cleaved-coupled-cavity laser oscillating at 1.3 μm wavelength. The performance of the modulator was evaluated by measuring bit error rates for the dominant mode of the laser using a monochromator as a selective bandpass filter. Error-free encoding was achieved for a non-return-to-zero rate of 1.5 Gbit/s. This result and observation of the optical spectrum demonstrate that the external modulation did not degrade the CW characteristics of the laser.
Low-temperature excess loss of UV-curable acrylate/nylon-coated optical fibres
- Author(s): H. Itoh ; T. Kimura ; S. Yamakawa
- Source: Electronics Letters, Volume 20, Issue 21, p. 879 –881
- DOI: 10.1049/el:19840597
- Type: Article
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Ultraviolet (UV) radiation curable acrylate/nylon-coated optical fibres show much higher excess loss at low temperatures than silicone/nylon-coated fibres. The difference in low-temperature excess loss between UV-curable acrylate/nylon- and silicone/nylon-coated fibres has been related to the degree of slip between the primary and nylon secondary coating layers during nylon extrusion coating process. The application of a lubricant to the acrylate and nylon interface has been found to be effective in reducing the excess loss at low temperatures.
High-power SLM operation of 1.3 μm InP/InGaAsP DFB LD with doubly buried heterostructure on p-type InP substrate
- Author(s): Y. Suzuki ; H. Nagai ; Y. Noguchi ; T. Matsuoka ; K. Kurumada
- Source: Electronics Letters, Volume 20, Issue 21, p. 881 –882
- DOI: 10.1049/el:19840598
- Type: Article
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A newly developed buried heterostructure on p-type InP substrate was successfully applied to the fabrication of a 1.3 μm DFB laser diode (LD). Stable CW SLM operation up to 31 mW at 30°C for an LD structure with two as-cleaved facets, and 53 mW at 25°C utilising AR coating, have been achieved.
Noise-reduction method for ROM/ACC filters
- Author(s): W. Surakampontorn
- Source: Electronics Letters, Volume 20, Issue 21, p. 882 –884
- DOI: 10.1049/el:19840599
- Type: Article
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A noise-reduction method for the coefficient roundoff noise in a ROM/ACC filter is proposed and demonstrated. The method of realisation is a modification of the contents of the look-up table of the ROM to include the error feedback. Therefore, it does not need time-consuming procedures, and is suitable for a filter implemented by using a microprocessor.
Low-OH-absorption fluoride glass infra-red optical fibres
- Author(s): G. Mazé ; V. Cardin ; M. Poulain
- Source: Electronics Letters, Volume 20, Issue 21, p. 884 –885
- DOI: 10.1049/el:19840600
- Type: Article
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Ultralow losses of 10−2 to 10−3 dB/km have been predicted in fluoride glass optical fibres between 2 and 4.5 μm. At 2.9 μm, in the central part of this spectral region, the OH− ion presents its fundamental stretching vibration which gives rise to a strong and broad absorption. The attenuation at 2.9 μm in a step-index fluorozirconate glass fibre has been brought down to 58 dB/km, by reducing the OH− concentration in the glass. It is the lowest attenuation yet reported at this wavelength in any optical fibre.
Measurements of the linewidth of ridge-guide DFB lasers
- Author(s): I.D. Henning ; L.D. Westbrook ; A.W. Nelson ; P.J. Fiddyment
- Source: Electronics Letters, Volume 20, Issue 21, p. 885 –887
- DOI: 10.1049/el:19840601
- Type: Article
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Measurements of the linewidth of nominally 1.5 μm ridge-guide DFB lasers are presented. Values of ∼15 MHz at output powers of 10 mW have been measured. By using a simple external cavity the linewidth was reduced by approximately two orders of magnitude.
Improved 2DEG mobility in selectively doped GaAs/N-AlGaAs grown by MOCVD using triethyl organometallic compounds
- Author(s): N. Kobayashi and T. Fukui
- Source: Electronics Letters, Volume 20, Issue 21, p. 887 –888
- DOI: 10.1049/el:19840602
- Type: Article
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In AlGaAs grown by MOCVD, carbon incorporation into the AlGaAs layer is discussed. For AlGaAs grown by trimethyl organometallic compounds, trimethyl aluminium and trimethyl gallium, remarkable carbon incorporation of up to about 1018 cm−3 is observed, although the carbon concentration decreases with the increase of the mole fraction ratio of arsine (AsH3) to III group organometallic compounds, [AsH3]/[III]. On the other hand, the use of triethyl organometallic compounds, triethyl aluminium and triethyl gallium, results in less carbon incorporation (∼1016 cm−3 independently of [AsH3]/[III]. Moreover, in selectively doped GaAs/n-Al0.3Ga0.7As heterostructures, two dimensional electron gas (2DEG) mobility is considerably improved using triethyl organometallic compounds in place of trimethyl organometallics. A 2DEG mobility of 445 000 cm2/V s is obtained for the SD heterostructure with a sheet electron concentration of 5.1 × 1011 cm−2 at 2 K.
Time-domain behaviour of electric field of an elevated dipole
- Author(s): J. Walsh and M.H. Rahman
- Source: Electronics Letters, Volume 20, Issue 21, p. 889 –890
- DOI: 10.1049/el:19840603
- Type: Article
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It is shown that the classical time Fourier transformed expression for the electric field of an elevated dipole above a plane earth model may be inverted into the time domain. The result is given explicitly for a time linear current; higher-order singularity functions may be handled by time differentiation.
Worst-month statistics
- Author(s): F. Dintelmann
- Source: Electronics Letters, Volume 20, Issue 21, p. 890 –892
- DOI: 10.1049/el:19840604
- Type: Article
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In the letter, use has been made of the exponential model to estimate average worst-month time percentages from sets of 36 monthly cumulative distributions of rain rate and from 48 ones of 11.6 GHz slant-path attenuation. It is shown that even with such limited data meaningful statistics can be obtained demonstrating the usefulness of this model.
Excess phase in microstrip DC blocks
- Author(s): C.E. Free and C.S. Aitchison
- Source: Electronics Letters, Volume 20, Issue 21, p. 892 –893
- DOI: 10.1049/el:19840605
- Type: Article
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892
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The letter gives details of excess phase calculations and measurements on microstrip DC breaks. Published microstrip discontinuity data has been used to develop an equivalent circuit which yields very good agreement between experimental and theoretical phase results over the frequency range 8 to 12 GHz.
Auger recombination in long-wavelength quantum-well lasers
- Author(s): C. Smith ; R.A. Abram ; M.G. Burt
- Source: Electronics Letters, Volume 20, Issue 21, p. 893 –894
- DOI: 10.1049/el:19840606
- Type: Article
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A formula for the ratio of the Auger recombination rates in quantum-well and bulk structures is derived. Significant changes in the Auger recombination in long-wavelength lasers are not expected on using a quantum well instead of a conventional double heterostructure unless the carrier density is reduced.
PINFET hybrid optical receivers for 1.2 Gbit/s transmission systems operating at 1.3 and 1.55 μm wavelength
- Author(s): M.C. Brain ; P.P. Smyth ; D.R. Smith ; B.R. White ; P.J. Chidgey
- Source: Electronics Letters, Volume 20, Issue 21, p. 894 –896
- DOI: 10.1049/el:19840607
- Type: Article
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PINFET hybrid optical receivers with a −3 dB bandwidth of more than 650 MHz have been used in 1.2 Gbit/s systems operating at 1.528 μm wavelength. For a 10−9 BER using an NRZ 215 −1 pseudorandom bit sequence, the receiver sensitivity was −36.5 dBm, which is comparable with the best results obtained using APDs.
Spectrum of nonuniform samples
- Author(s): F. Marvasti
- Source: Electronics Letters, Volume 20, Issue 21, p. 896 –897
- DOI: 10.1049/el:19840608
- Type: Article
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In the letter the spectrum of nonuniform samples is derived. From the spectrum the letter shows that the original signal can be retrieved from its nonuniform samples.
Hydrogen quantity generated from optical-fibre coating
- Author(s): K. Noguchi ; N. Uesugi ; K. Ishihara
- Source: Electronics Letters, Volume 20, Issue 21, p. 897 –898
- DOI: 10.1049/el:19840609
- Type: Article
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Hydrogen quantities generated by chemical decomposition of silicone resin, which is used for optical-fibre coating material, have been measured. The saturated hydrogen quantity and reaction rate for the hydrogen generation are evaluated from the measurement results. Effective methods for suppression of the hydrogen quantity are also proposed.
Novel GaAs monolithic multistage X–Ku band amplifier
- Author(s): R. Esfandiari ; Y.K. Chen ; S. Wanuga ; P. Chye ; C. Huang
- Source: Electronics Letters, Volume 20, Issue 21, p. 898 –899
- DOI: 10.1049/el:19840610
- Type: Article
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A novel design approach to a wideband GaAs microwave monolithic amplifier is presented using the principle of feedback and active matching networks. The multistage amplifier utilises a unique biasing circuit which requires only one biasing voltage. A 6–18 GHz multistage amplifier has been demonstrated using the proposed approach. The amplifier has low input/output VSWR, a maximum of 20 dB gain and at least 15 dBm of output power.
Erratum: Occurrence of a singular Jacobian in filter design
- Author(s): H.J. Orchard
- Source: Electronics Letters, Volume 20, Issue 21, page: 899 –899
- DOI: 10.1049/el:19840611
- Type: Article
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