Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 19, 13 September 1984
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Volume 20, Issue 19
13 September 1984
Improved statistical design centring for electrical networks
- Author(s): I.R. Ibbitson ; E. Crompton ; D. Boardman
- Source: Electronics Letters, Volume 20, Issue 19, p. 757 –758
- DOI: 10.1049/el:19840515
- Type: Article
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The problem of maximising the manufacturing yield of electrical circuits is addressed. This is achieved by using a design centring algorithm based on spatial exploration of circuit component space. A new method of predicting the optimising direction between design centring iterations is derived and shown to be of practical importance.
CMOS design technique to eliminate the stuck-open fault problem of testability
- Author(s): A.F. Murray
- Source: Electronics Letters, Volume 20, Issue 19, p. 758 –760
- DOI: 10.1049/el:19840516
- Type: Article
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A dynamic CMOS design style is described, which utilises both N-type and P-type logic blocks and avoids the problems in generating tests for stuck-open faults. The testability of the resultant logic is examined analytically and fault simulation results are presented.
Integrated optics processing: uses of an EDTA etch solution
- Author(s): E.J. Murphy ; W.J. Minford ; T.C. Rice
- Source: Electronics Letters, Volume 20, Issue 19, p. 760 –761
- DOI: 10.1049/el:19840517
- Type: Article
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A new processing step with important implications in LiNbO3 waveguide device fabrication is reported. The combination of an EDTA solution and photomasking is used to etch titanium and form novel waveguide structures allowing local control of the propagation constant and optical mode profile. Several applications are discussed.
High temperature CW operation of p-substrate buried crescent laser diode emitting at 1.3 μm
- Author(s): Y. Sakakibara ; E. Oomura ; H. Higuchi ; H. Namizaki ; K. Ikeda ; W. Susaki
- Source: Electronics Letters, Volume 20, Issue 19, p. 761 –762
- DOI: 10.1049/el:19840518
- Type: Article
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A 1.3 μm InGaAsP/InP buried crescent laser diode has been fabricated on p-InP substrate. The laser diode has a low threshold current, as low as 10 mA. It operates at the output power of 5 mW under CW condition at temperatures higher nary aging test at 70°C with a constant light output of 5 mW, the lasers have been operating stably for more than 1000 h.
Transistor effect in monolithic Si/CoSi2/Si epitaxial structures
- Author(s): E. Rosencher ; S. Delage ; Y. Campidelli ; F. Arnaud D'Avitaya
- Source: Electronics Letters, Volume 20, Issue 19, p. 762 –764
- DOI: 10.1049/el:19840519
- Type: Article
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Epitaxial Si 〈111〉/CoSi2/Si structures have been grown by molecular beam epitaxy. The transistor effect, via ballistic electron transport in the CoSi2 200 Å-thick base, has been observed. The ballistic mean free path in CoSi2 obtained (λB ̃ 105 Å) from the current gain is consistent within 20% with the predicted value (λBth ̃ 80 Å).
Fast transform algorithm for use in decoding BCH-type codes
- Author(s): G.R. Redinbo and K.K. Rao
- Source: Electronics Letters, Volume 20, Issue 19, p. 764 –766
- DOI: 10.1049/el:19840520
- Type: Article
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It is shown how an intermediate chord property in the Cooley-Tukey FFT algorithm over a finite field can be used in faster decoding of the Bose-Chaudhuri-Hocquenghen codes in the spectral domain.
Collector/emitter offset voltage in double-heterojunction bipolar transistors
- Author(s): J.R. Hayes ; A.C. Gossard ; W. Wiegmann
- Source: Electronics Letters, Volume 20, Issue 19, p. 766 –767
- DOI: 10.1049/el:19840521
- Type: Article
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Double-heterojunction bipolar transistors (DHBT) can exhibit a large collector/emitter offset voltage at zero collector current which will adversely affect digital switching circuits. It is shown that this effect results from insufficient grading at the base/collector heterojunction. A GaAlAs/GaAs DHBT grown by MBE having a 130 Å compositional grading at the emitter/base and base/collector junction showed no sign of the collector/emitter offset voltage.
Fundamental-mode cutoff in depressed cladding multiple-fibre couplers
- Author(s): J.D. Love and A. Ankiewicz
- Source: Electronics Letters, Volume 20, Issue 19, p. 767 –768
- DOI: 10.1049/el:19840522
- Type: Article
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The fundamental mode of a multiple-fibre coupler, consisting of an arbitrary number of identical parallel fibres, has exactly the same cutoff wavelength as one of the fibres in isolation from the others and is independent of the separation of the fibres. For a single-mode coupler composed of two depressed inner-cladding fibres, both the fundamental and second modes have finite cutoff wavelengths provided the fundamental mode of each fibre is cut off.
Compact range for millimetre-wave frequencies using a dielectric lens
- Author(s): W. Menzel and B. Hunder
- Source: Electronics Letters, Volume 20, Issue 19, p. 768 –769
- DOI: 10.1049/el:19840523
- Type: Article
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A compact range for millimetre-wave frequencies is described using a dielectric lens. This configuration leads to a number of advantages such as reduced tolerance requirements and costs, and can be implemented into standard antenna test chambers.
InP/InGaAsP p-type substrate and mass transported doubly buried heterostructure laser
- Author(s): Y. Noguchi ; Y. Suzuki ; T. Matsuoka ; H. Nagai
- Source: Electronics Letters, Volume 20, Issue 19, p. 769 –771
- DOI: 10.1049/el:19840524
- Type: Article
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A novel InP/InGaAsP buried heterostructure laser diode on p-type InP substrate has been developed. The laser has achieved a threshold current as low as 20 mA DC with high power output of 50 mW under CW operation in the fundamental transverse mode.
Tunnelling in quantum-well structures
- Author(s): M.J. Kelly
- Source: Electronics Letters, Volume 20, Issue 19, p. 771 –772
- DOI: 10.1049/el:19840525
- Type: Article
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An exact solution of the tunnelling current through quantum-well barriers is compared with various approximations. Better agreement between theory and experiment follows in certain règimes.
Light modulator using piezoelectric films with waveguides
- Author(s): M. Kimura ; H. Takahashi ; T. Miyamoto
- Source: Electronics Letters, Volume 20, Issue 19, p. 772 –774
- DOI: 10.1049/el:19840526
- Type: Article
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A light modulator using piezoelectric films based on optical interference of the Mach-Zehnder type has been proposed and demonstrated. The modulator is constructed with two optical waveguides joined to each other at both ends to divide the incident light and to recombine them, and each waveguide is fabricated on a polyvinylidene fluoride (PVDF) film to serve as a voltage-driven phase-shifter.
Ultralow-loss 220 km-long single-mode-fibre cable link in 1.5 μm wavelength region
- Author(s): K. Kitayama ; N. Uesugi ; S. Seikai ; O. Kawata ; K. Ishihara
- Source: Electronics Letters, Volume 20, Issue 19, p. 774 –775
- DOI: 10.1049/el:19840527
- Type: Article
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Ultralow-loss single-mode-fibre cables specially designed for the 1.5 μm region were fabricated. The fibre parameters are a mode-field radius of 6 μm and an effective cutoff wavelength of 1.4 μm. The average loss is 0.19 dB/km at 1.55 μm. The total loss of a 216 km-long cable link consisting of 2 km-long fibres with 107 splices was 46.3 dB. The cables also show a good loss stability at 1.55 μm in long-term use.
Diversity for binary noncoherent frequency shift keying in impulsive reverberation noise
- Author(s): A.M. Maras ; H. Davidson ; A.G.J. Holt
- Source: Electronics Letters, Volume 20, Issue 19, p. 775 –777
- DOI: 10.1049/el:19840528
- Type: Article
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775
–777
(3)
The error rate in active sonar is given for binary non-coherent frequency shift keying (FSK) in slow and non-selective Rayleigh fading (multipath) and additive non-Gaussian reverberation noise. The improvement achieved by using time-diversity is derived from the expression for the probability of error. It is shown that for error probabilities of the order of 10−5 the improvement factor is 10 dB.
Millimetrewave groove guide with V-shaped grooves
- Author(s): T.K. Ho and D.J. Harris
- Source: Electronics Letters, Volume 20, Issue 19, p. 777 –778
- DOI: 10.1049/el:19840529
- Type: Article
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The use of a V-groove guide has been investigated and compared with rectangular-groove guide. The V-groove guide is found to be superior. It has lower attenuation and rejects higher-order modes more effectively. Connection losses are small, and guide losses are around 0.4 dB/m at 96 GHz for an aluminium machined guide even with intermediate connections. For a 90° V-groove of depth equal to 0.4 of the plane separation, the guide wavelength is about 1% larger than the free-space wavelength. It is expected that the V-groove guide will provide a valuable single-mode low-loss and wideband waveguide for millimetrewave propagation.
Comparison between first-order digital and analogue phase-locked loops
- Author(s): A.N. D'Andrea and A. Vaccarelli
- Source: Electronics Letters, Volume 20, Issue 19, p. 778 –780
- DOI: 10.1049/el:19840530
- Type: Article
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p.
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The letter deals with a comparison between a binary quantised digital phase-locked loop and a conventional one. It is shown that, under the condition of equal acquisition times, a digital loop performs better for low signal/noise ratios.
Offset-compensated switched-capacitor circuits
- Author(s): K. Watanabe and K. Fujiwara
- Source: Electronics Letters, Volume 20, Issue 19, p. 780 –781
- DOI: 10.1049/el:19840531
- Type: Article
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–781
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Novel switched-capacitor circuits are described which make the offset-compensation possible without short-circuiting the input and output terminals of op amps. Based on a common configuration, the proposed circuits are useful for basic building blocks integrable using the semicustom IC process.
New method of fault detection in optical fibre links
- Author(s): B. Daino and P. Spano
- Source: Electronics Letters, Volume 20, Issue 19, p. 781 –783
- DOI: 10.1049/el:19840532
- Type: Article
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The detection of the signal backscattered by the faults present in an optical fibre is achieved by observing the amplified signal coming out by the rear facet of the exciting laser source. This provides a simple method which employs the same semiconductor laser as a source and an amplifier, thus notably simplifying the procedure for fault detection. Some experimental results are presented.
Magnetostatic variable constant delay line consisting of metal-dielectric YIG-GGG metal
- Author(s): S.N. Bajpai
- Source: Electronics Letters, Volume 20, Issue 19, p. 783 –784
- DOI: 10.1049/el:19840533
- Type: Article
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Variable constant time delay adjustable by 20% over a bandwidth of 300 MHz at X-band has been theoretically obtained using a single delay line consisting of two ground planes. This has been achieved by rotating the direction of the applied DC magnetic field in the forward volume wave to the backward volume wave plane and adjusting the magnitude. Electronically variable constant delay lines have potential application in broadband phased array antennas and microwave signal processing.
Low crosstalk polarisation-maintaining optical fibre with an 11 km length
- Author(s): Y. Sasaki ; T. Hosaka ; J. Noda
- Source: Electronics Letters, Volume 20, Issue 19, p. 784 –785
- DOI: 10.1049/el:19840534
- Type: Article
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An 11 km-long polarisation-maintaining optical fibre with crosstalk up to −25.2 dB and −22.5 dB at 1.30 μm and 1.56 μm, respectively, is presented. Transmission loss is 1.2 dB/km at 1.3 μm and has a minimum value of 0.79 dB/km at 1.56 μm.
Phase noise of mixers
- Author(s): E. Rotholz
- Source: Electronics Letters, Volume 20, Issue 19, p. 786 –787
- DOI: 10.1049/el:19840535
- Type: Article
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A formula is derived for the output phase noise of a mixer when both the radio frequency RF and local oscillator LO carriers are impaired by phase noise. The calculation uses test results obtained with three discrete carriers. An application of the noise formula to frequency synthesis is included.
Glass reinforced GaAs beam lead Schottky diode with airbridge for millimetre wavelengths
- Author(s): K. Mills ; F. Azan ; H. Perruche ; P. Boireau ; J. Lacombe
- Source: Electronics Letters, Volume 20, Issue 19, p. 787 –788
- DOI: 10.1049/el:19840536
- Type: Article
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We describe the fabrication and measurement of a glass reinforced beam lead Schottky diode with an airbridge for use at millimetre wavelengths. We report an extremely low single sideband (SSB) noise figure for these diodes of 7.9 dB at 94 GHz, including a 1.5 dH IF (30 MHz) contribution.
Nonlinearity in GaAs FET power amplifying devices
- Author(s): T.C. Cheng and H.V. Shurmer
- Source: Electronics Letters, Volume 20, Issue 19, p. 788 –790
- DOI: 10.1049/el:19840537
- Type: Article
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Modern microwave communication systems rely heavily on the linearity of output stages incorporating GaAs FET power amplifying devices. This letter describes a system for the automatic nonlinearity measurement in such devices of gain and phase angle as functions of input power level and frequency, with results leading to significantly improved system performance.
Gigahertz-bandwidth InGaAsP/InP optical modulators/switches with double-hetero waveguides
- Author(s): M. Fujiwara ; A. Ajisawa ; Y. Sugimoto ; Y. Ohta
- Source: Electronics Letters, Volume 20, Issue 19, p. 790 –792
- DOI: 10.1049/el:19840538
- Type: Article
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A new kind of InGaAsP/InP electro-optic directional coupler modulator/switch with double-hetero plano-convex waveguides, which is suitable for monolithic integrated optics, has been proposed and demonstrated. The fabricated devices have shown low optical loss (4 dB/cm) and high modulation bandwidth of 1 GHz at 1.3 μm wavelength.
Limitations of the projected shadow method for estimating the strut influence in paraboloidal antennas
- Author(s): V. Hombach and H. Thielen
- Source: Electronics Letters, Volume 20, Issue 19, p. 792 –794
- DOI: 10.1049/el:19840539
- Type: Article
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The results of two convenient methods for calculating the sidelobe level caused by the feed support struts of paraboloidal reflector antennas have been compared. These methods are the simple ‘projected shadow method’ and the more sophisticated ‘equivalent current approach’. It turns out that the shadow method is applicable for the computation of the sidelobes of large antennas up to an angle of 3 to 4° from boresight and in the case of small antennas up to 8 to 10°.
100 Mbit/s laser diode terminal with optical gain for fibre-optic local area networks
- Author(s): A. Alping ; B. Bentland ; S.T. Eng
- Source: Electronics Letters, Volume 20, Issue 19, p. 794 –795
- DOI: 10.1049/el:19840540
- Type: Article
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The feasibility of using a single GaAlAs buried-heterostructure laser as a multifunctional terminal on a fibre-optic bus has been demonstrated. During the reception period the received optical signal is simultaneously tapped for the information and optically amplified for further transmission. During the transmitting period the laser diode terminal works as a conventional optical emitter. A 100 Mbit/s transmission experiment gave a received bit error rate of less than 10−9 with a simultaneous optical gain of 3.5 dB.
Crescent InGaAsP mesa substrate buried-heterostructure lasers at 1.55 μm
- Author(s): R.D. Feldman ; R.F. Austin ; M. Oron
- Source: Electronics Letters, Volume 20, Issue 19, p. 795 –796
- DOI: 10.1049/el:19840541
- Type: Article
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Lasers with an inverted buried-crescent active layer have been grown over mesa substrates in a single liquid-phase-epitaxial growth step. Threshold currents are 50–70 mA. High output power, with linear light/current characteristics up to 18 mW, is seen. The temperature dependence is characterised by T0 = 70°C, which is higher than normally seen in 1.55 μm lasers.
Measurements of the statistics of excess noise in separate absorption, grading and multiplication (SAGM) avalanche photodiodes
- Author(s): B.L. Kasper ; J.C. Campbell ; A.G. Dentai
- Source: Electronics Letters, Volume 20, Issue 19, p. 796 –798
- DOI: 10.1049/el:19840542
- Type: Article
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Measurements of the statistical distributions of excess noise as a function of avalanche gain and incident optical power are reported for SAGM avalanche photodiodes. The observed distributions are not Gaussian, but exhibit a ‘high-side’ tail which has consequences for the performance of these APDs in optical receivers.
Amplitude distortion: a means of characterising line-of-sight microwave radio paths during multipath fading
- Author(s): A.L. Martin
- Source: Electronics Letters, Volume 20, Issue 19, p. 798 –799
- DOI: 10.1049/el:19840543
- Type: Article
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A method of obtaining the multipath activity factor η and mean multipath delay τ0 from measurements of channel amplitude distortion has been developed. The activity factor and mean delay due to multipath fading are necessary as inputs to predict the performance of digital microwave radio systems operating on line-of-sight paths.
Multimode S-parameters of planar multiport junctions by boundary element method
- Author(s): E. Tonye and H. Baudrand
- Source: Electronics Letters, Volume 20, Issue 19, p. 799 –802
- DOI: 10.1049/el:19840544
- Type: Article
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A combination of the boundary element method in the junction, using a Green's function approach and multimode expansions in the outgoing planar transmission lines, has been proposed. The multimode S-parameters are calculated with good accuracy from a simple identification in the system of equations given by the boundary element method. In addition to a considerable gain of computing time with this method, it is easy to handle inhomogeneities and complicated structures.
Large-signal switching transients in index-guided semiconductor lasers
- Author(s): R.S. Tucker
- Source: Electronics Letters, Volume 20, Issue 19, p. 802 –803
- DOI: 10.1049/el:19840545
- Type: Article
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A study of large-signal switching transients in index-guided semiconductor lasers is reported. Simple expressions are presented for turn-on time, turn-off time and overshoot. It is shown that the switching times can be related directly to the small-signal resonance frequency and the on/off ratio.
Expected performances of GaAlAs/GaAs double-velocity heterojunction impatt diodes
- Author(s): J.C. de Jaeger ; R. Kozlowski ; G. Salmer
- Source: Electronics Letters, Volume 20, Issue 19, p. 803 –804
- DOI: 10.1049/el:19840546
- Type: Article
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A novel heterojunction avalanche transit-time diode with low-high-low doping profile is proposed. The avalanche ionisation occurs only in a low doping GaAs zone and the drift zone incorporates high (GaAlAs) and low (GaAs) doping materials having different saturated drift velocities. Potential performances of the structure are analysed in the X-band and in the millimetre-wave range using computer simulations. Theoretical predictions show an important improvement of the conversion efficiency in comparison with GaAs low-high-low impatt diodes.
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