Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 14, 5 July 1984
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Volume 20, Issue 14
5 July 1984
Phase shift nulling DC-field fibre-optic magnetometer
- Author(s): A.D. Kersey ; M. Corke ; D.A. Jackson
- Source: Electronics Letters, Volume 20, Issue 14, p. 573 –574
- DOI: 10.1049/el:19840396
- Type: Article
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p.
573
–574
(2)
A closed-loop DC-field fibre-optic magnetometer is described which utilises the dependence of the AC magneto-strictive responsitivity of a metallic glass sensing element on the local DC field in order to detect low-frequency or DC changes in the total local field. A detection sensitivity of -2 μGs has been demonstrated at frequencies below 2 Hz.
Imaging spatial distributions of resistivity—an alternative approach
- Author(s): L. Tarassenko and P. Rolfe
- Source: Electronics Letters, Volume 20, Issue 14, p. 574 –576
- DOI: 10.1049/el:19840397
- Type: Article
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p.
574
–576
(3)
We propose a method to obtain images of electrical resistivity within body segments, which is directly applicable to cranial imaging in the newborn. The method is based on sensitivity measurements and uses a weighted back-projection algorithm. Preliminary results from a laboratory phantom are presented.
Effect of impulse noise on data transmission using FDPSK
- Author(s): S. Nedić
- Source: Electronics Letters, Volume 20, Issue 14, p. 576 –577
- DOI: 10.1049/el:19840398
- Type: Article
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p.
576
–577
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The receiver impulsive characteristic (RIC) for binary frequency differential phase-shift keying (FDPSK) is evaluated. Numerical results for the error rate of the receiver preceded by an RLC filter are given. The results are compared to those of the widely used TDPSK.
Novel structure of laser diode and light-emitting diode realised by coaxial transverse junction (CTJ)
- Author(s): H. Ito ; N. Komagata ; H. Yamada ; H. Inaba
- Source: Electronics Letters, Volume 20, Issue 14, p. 577 –579
- DOI: 10.1049/el:19840399
- Type: Article
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p.
577
–579
(3)
A new structure of laser diodes (LD) and light-emitting diodes (LED) with coaxial transverse junction (CTJ) is proposed and demonstrated for the first time, whose optical output as well as p-n junction is cylindrical and perpendicular to the substrate. This CTJ configuration should have wide variety and capabilities.
Influence of gap width on mode discrimination in cleaved coupled cavity lasers
- Author(s): J. Buus and M.J. Adams
- Source: Electronics Letters, Volume 20, Issue 14, p. 579 –580
- DOI: 10.1049/el:19840400
- Type: Article
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p.
579
–580
(2)
Recent publications on the C3 laser appear to have presented contradictory results for the optimum gap width to give maximum mode discrimination and thus enhance single-mode behaviour. We give here a simple analysis which shows that the optimum width is equal to an odd multiple of a quarter wavelength in cases where loss in the gap can be neglected, but to an even multiple for cases with significant gap loss.
Novel approach to multicoupled-cavity filter sensitivity and group delay computation
- Author(s): J.W. Bandler ; S.H. Chen ; S. Daijavad
- Source: Electronics Letters, Volume 20, Issue 14, p. 580 –582
- DOI: 10.1049/el:19840401
- Type: Article
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p.
580
–582
(3)
Novel formulas for simulation and sensitivity analysis of multicoupled-cavity filters are presented. Only one real LU factorisation and simple utilisation of the corresponding original network analysis permit exact first-order sensitivity computations, group delay calculation and loss prediction.
Biased model reduction by factor division
- Author(s): T.N. Lucas
- Source: Electronics Letters, Volume 20, Issue 14, p. 582 –583
- DOI: 10.1049/el:19840402
- Type: Article
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p.
582
–583
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Model reduction by the factor division method is extended to produce biased models. A simple Routh-type algorithm avoids the necessity to calculate the retained system time moments and Markov parameters beforehand and solving the Padé equations for the reduced numerator. An example demonstrates its use.
Pyroelectric imaging of defects in bulk acoustic wave lithium niobate transducers
- Author(s): D. Royer ; E. Dieulesaint ; P. Kummer
- Source: Electronics Letters, Volume 20, Issue 14, p. 583 –585
- DOI: 10.1049/el:19840403
- Type: Article
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p.
583
–585
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Initial results on a method for testing piezoelectric transducers made of a polar material are presented. The method consists of measuring the voltage induced across the transducer electrodes by an intensity-modulated laser beam scanning the surface. Applied to a bulk acoustic wave LiNbO3 transducer, this technique has revealed domains with Z-axis reversed.
Power spectra of HDBn and CHDBn codes
- Author(s): G.S. Poo
- Source: Electronics Letters, Volume 20, Issue 14, p. 585 –586
- DOI: 10.1049/el:19840404
- Type: Article
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p.
585
–586
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By means of skilled programming techniques, it is possible to extract attractive analytical formulas in closed-cosine form for the families of HDBn and CHDBn codes.
Observation of bistable optical effects in a twin GaAs/GaAlAs diode external cavity ring laser
- Author(s): J. McInerney ; L. Reekie ; D.J. Bradley
- Source: Electronics Letters, Volume 20, Issue 14, p. 586 –588
- DOI: 10.1049/el:19840405
- Type: Article
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p.
586
–588
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Hysteresis, slow quasiregular oscillations and bistability have been observed in the output from a laser system consisting of two antireflection coated GaAs/GaAlAs double heterostructure 20 μm oxide stripe laser diodes symmetrically placed in an external ring resonator.
Effect of external optical feedback on spectral properties of external cavity semiconductor lasers
- Author(s): N.K. Dutta ; N.A. Olsson ; K.-Y. Liou
- Source: Electronics Letters, Volume 20, Issue 14, p. 588 –589
- DOI: 10.1049/el:19840406
- Type: Article
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p.
588
–589
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The effects of external optical feedback on the spectral properties of single-mode external cavity semiconductor lasers that use a graded-index (GRIN) lens in the optical cavity have been investigated. Mode rejection ratio and intensity drop-out rate of the dominant mode as a function of optical strength have been measured. These measurements show that a laser with a short (160 μm) GRIN-lens external cavity can tolerate optical feedback as large as −20 dB without significant penalty. This minimum optical feedback can be larger when lasers with shorter cavity length are used.
Fabrication of a high silica glass waveguide optical accessor
- Author(s): Y. Yamada ; M. Kawachi ; M. Yasu ; M. Kobayashi
- Source: Electronics Letters, Volume 20, Issue 14, p. 589 –591
- DOI: 10.1049/el:19840407
- Type: Article
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p.
589
–591
(3)
A four-port waveguide-type optical accessor, which is spliced with optical fibres by CO2, laser fusion, has been realised using high silica channel waveguides. The accessor shows excess loss of about 3 dB for both optical branching and mixing, together with low crosstalk of less than −65dB.
Microprocessing of GaAs cylindrical columns for integrated optical device fabrication by Cl2-Ar reactive ion etching
- Author(s): H. Yamada ; H. Ito ; H. Inaba
- Source: Electronics Letters, Volume 20, Issue 14, p. 591 –592
- DOI: 10.1049/el:19840408
- Type: Article
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p.
591
–592
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We report a reactive ion etching (RIE) technique employing a Cl2-Ar gas mixture for GaAs integrated optical device fabrication. This RIE enables one to process GaAs and AlGaAs wafers independently of crystal orientation. Etching characteristics and a demonstration of the vertical etching of GaAs wafers in the shape of a cylindrical column are described.
Effect of current rise time on beam stability in twin stripe lasers
- Author(s): R.F. Ormondroyd ; T.E. Rozzi ; P.A. Morton ; J. Singh
- Source: Electronics Letters, Volume 20, Issue 14, p. 592 –594
- DOI: 10.1049/el:19840409
- Type: Article
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p.
592
–594
(3)
The transient behaviour of the output of a twin stripe laser is found to be dependent upon the rise time and levels of the injection currents. Under certain biasing conditions the transient output has a high initial value which relaxes to a much lower value if the pulse rise time is fast but not if it is slower. This effect is found to be associated with beam steering.
Low-threshold and high temperature single-longitudinal-mode operation of 1.55 μm-band DFB-DC-PBH LDs
- Author(s): M. Kitamura ; M. Yamaguchi ; S. Murata ; I. Mito ; K. Kobayashi
- Source: Electronics Letters, Volume 20, Issue 14, p. 595 –596
- DOI: 10.1049/el:19840410
- Type: Article
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p.
595
–596
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1.55 μm-band distributed-feedback laser diodes with double-channel planar buried heterostructure (DFB-DC-PBH LDs) have been developed. As well as low threshold current, 19 mA at room temperature, stable CW single-longitudinal-mode operation up to the high power level of 23 mW and the high temperature of 108°C has been obtained.
Near room temperature 1.3 μm single photon counting with a InGaAs avalanche photodiode
- Author(s): B.F. Levine ; C.G. Bethea ; J.C. Campbell
- Source: Electronics Letters, Volume 20, Issue 14, p. 596 –598
- DOI: 10.1049/el:19840411
- Type: Article
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p.
596
–598
(3)
We report the first single-photon counting experiments in a III–V APD. High quantum efficiency, ν=12%, near-room-temperature operation, T=−20°C, has been achieved at long wavelengths λ=1.3 μm.
Negative X-ray resist produced by proton bombardment
- Author(s): H.S. Gecim ; R. Howe ; J.W. Mcgowan ; I. Reid
- Source: Electronics Letters, Volume 20, Issue 14, p. 598 –599
- DOI: 10.1049/el:19840412
- Type: Article
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p.
598
–599
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Polymethylmetacrylate (PMMA) films of 580 nm have been irradiated by X-rays through a copper mask. Subsequent proton bombardment of the PMMA films (masked and unmasked regions) changes them, at doses ≳2×1013 ions/cm2, from a positive to a negative resist.
Stress transformation due to fusion splicing in optical fibre
- Author(s): P.L. Chu and T. Whitbread
- Source: Electronics Letters, Volume 20, Issue 14, p. 599 –600
- DOI: 10.1049/el:19840413
- Type: Article
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p.
599
–600
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It is shown experimentally that the frozen-in stress of the fibre is relieved due to fusion joint now reverts to that of the preform with compressive surface stress of the fibre. Consequently, it is expected that the fatigue lifetime of the joint is greater than that of the rest of the fibre.
Monitoring the tilt angle of an ion-beam cross-section
- Author(s): W.J. Szajnowski
- Source: Electronics Letters, Volume 20, Issue 14, p. 600 –601
- DOI: 10.1049/el:19840414
- Type: Article
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p.
600
–601
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A nondestructive method is presented to monitor the tilt angle of an elliptical cross-section of an ion beam. The desired information is extracted from random signals induced by the beam on four metal electrodes forming part of a flight tube.
Picosecond absorption saturation in GaInAsP
- Author(s): A. Miller ; R.J. Manning ; A.M. Fox ; J.H. Marsh
- Source: Electronics Letters, Volume 20, Issue 14, p. 601 –603
- DOI: 10.1049/el:19840415
- Type: Article
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p.
601
–603
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Optical excite/probe measurements in Ga0.35In0.65As0.78−P0.22 using high-power 5 ps pulses at 1.054 μm show a recovery of the bleached transmission in 12 Ps consistent with fast Auger carrier recombination. Evidence of induced intervalence band absorption is apparent.
Monolithically integrated Gunn oscillator at 35 GHz
- Author(s): N. Wang ; S.E. Schwarz ; T. Hierl
- Source: Electronics Letters, Volume 20, Issue 14, p. 603 –604
- DOI: 10.1049/el:19840416
- Type: Article
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p.
603
–604
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A fully planar monolithically integrated Gunn oscillator for 35 GHz has been constructed on a GaAs substrate. An output power of about 1.5 mW, corresponding to an efficiency of 0.5%, is obtained from the oscillator in its present unoptimised form. The device is intended for use as a local oscillator in integrated millimetre-wave receivers. Measurements are made by means of quasi-optical output coupling.
Conductivity changes in tungsten silicide films due to rapid thermal processing
- Author(s): T.S. Jayadev and A. Joshi
- Source: Electronics Letters, Volume 20, Issue 14, p. 604 –606
- DOI: 10.1049/el:19840417
- Type: Article
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p.
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Several limitations of the polysilicon gate in VLSI have led to the development of a silicide/polysilicon material as all alternative to polysilicon. Recently, rapid thermal processing has been investigated for annealing such polycide films. We report here the electrical-conductivity changes during the process of rapid thermal annealing in CVD tungsten silicide films. It is shown that electrical resistivity initially increases due to changes in the silicon to tungsten ratio and then drops to about one-tenth of the initial value, thus suggesting a minimum time and power required for achieving low-resistivity tungsten silicide films in VLSI interconnections.
Equivalence of the left-edge and column-by-column channel-routing algorithms
- Author(s): A. Somogyi
- Source: Electronics Letters, Volume 20, Issue 14, p. 606 –607
- DOI: 10.1049/el:19840418
- Type: Article
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p.
606
–607
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In the absence of vertical constraints, the left-edge algorithm is known to give an optimal solution to the channel-routing problem. Recently, new wiring algorithms using a column-by-column approach have been proposed, which are capable of generating all the optimal solutions. In the letter the proof is given for the identity of the result of the left-edge algorithm and the column-by-column algorithm (implementing a specific criterion). Some ways of exploiting the flexibility of the column-by-column algorithms are also discussed.
OH-absorption in fluoride glass infra-red fibres
- Author(s): P.W. France ; S.F. Carter ; J.R. Williams ; K.J. Beales ; J.M. Parker
- Source: Electronics Letters, Volume 20, Issue 14, p. 607 –608
- DOI: 10.1049/el:19840419
- Type: Article
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p.
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–608
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The OH fundamental peak absorption at 2.87 μm has been reduced in fluoride fibres to less than 20 dB/km. By measuring the difference spectra between low and high peaks, the OH-peak shape has been measured over two orders of magnitude, and the results indicate that the optimum low-loss window occurs at 2.55 μm in these materials.
GaAs-loaded metal waveguide components for high-speed low-VSWR optoelectronic millimetre-wave switching
- Author(s): W. Platte ; R. Glöckler ; H. Brand
- Source: Electronics Letters, Volume 20, Issue 14, p. 608 –610
- DOI: 10.1049/el:19840420
- Type: Article
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p.
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–610
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A new approach to fast optoelectronic microwave and millimetre-wave switching is reported. The concept is based on a metal waveguide section containing a thin slab of semi-insulating GaAs. Modulation or switching is achieved by wave attenuation across a laser-induced photoconductive plasma wedge generated within the GaAs slab via edge excitation. First experimental results in the 30–35 GHz range are presented.
Active-RC-circuit synthesis for the simulation of a grounded inductor
- Author(s): Won Sup Chung and K. Watanabe
- Source: Electronics Letters, Volume 20, Issue 14, p. 610 –612
- DOI: 10.1049/el:19840421
- Type: Article
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A systematic synthesis process is given for the simulation of grounded inductors. The process is used to obtain four circuits which are believed to be novel; two are particularly suitable for the realisation of tunable inductors.
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