Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 13, 21 June 1984
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 20, Issue 13
21 June 1984
Intrinsic manifestation of regular pulsations in time-averaged spectra of semiconductor lasers
- Author(s): M. Osiński and M.J. Adams
- Source: Electronics Letters, Volume 20, Issue 13, p. 525 –526
- DOI: 10.1049/el:19840364
- Type: Article
- + Show details - Hide details
-
p.
525
–526
(2)
Time-averaged spectra of pulsating semiconductor lasers are simulated by integrating the numerical solution of multi-mode rate equations. The results obtained show that the linewidth broadening of each longitudinal mode due to the dynamic wavelength shift is accompanied by a characteristic ‘mode-splitting’ effect arising from the integration.
Improvement of crystalline quality of the surface layer in buried implanted oxide structures by silicon implantation
- Author(s): K. Das ; S. McClelland ; J.B. Butcher
- Source: Electronics Letters, Volume 20, Issue 13, p. 526 –527
- DOI: 10.1049/el:19840365
- Type: Article
- + Show details - Hide details
-
p.
526
–527
(2)
An improvement of the crystalline quality of the surface layer in buried implanted oxide structures in silicon has been achieved by silicon in implantation and subsequent 570°C anneal treatment.
Refined method for measurement of small-signal alphas of thyristors
- Author(s): A. Silard and B. Kosa
- Source: Electronics Letters, Volume 20, Issue 13, p. 527 –528
- DOI: 10.1049/el:19840366
- Type: Article
- + Show details - Hide details
-
p.
527
–528
(2)
The letter presents a refined method for accurate measurement of small-signal current gains (alphas) of thyristors. The measurement circuit developed incorporates an original elimination procedure—with a single tuning for the entire range of measurement frequencies—of the spurious effect of the parasitic gate-anode capacitance Cga.
Simplified optical fibre end-cleave angle measurement device
- Author(s): C.A. Millar
- Source: Electronics Letters, Volume 20, Issue 13, p. 528 –530
- DOI: 10.1049/el:19840367
- Type: Article
- + Show details - Hide details
-
p.
528
–530
(3)
A modified method of fibre end-cleave angle measurement is described and compared with alternative techniques. The device has no precision parts and has a resolution of better than 0.25 degrees of end angle.
Nonabsorbing-mirror (NAM) CDH-LOC diode lasers
- Author(s): D. Botez and J.C. Connolly
- Source: Electronics Letters, Volume 20, Issue 13, p. 530 –532
- DOI: 10.1049/el:19840368
- Type: Article
- + Show details - Hide details
-
p.
530
–532
(3)
CDH-LOC lasers with lateral and transverse mode control in nonabsorbing mirror regions are realised by a single etch-and-regrowth cycle. The maximum achieved peak-pulsed output power (100 ns) and catastrophic-optical-damage (power-density) levels are 1.5 W and (20–30) MW/cm2, respectively. A linear power density of 200 mW/μm is reached at catastrophic damage. Fundamental-mode operation is obtained to 80 mW in narrow beams (θ∥≅7°; θ⟂≅15°).
Simplified high-performance dual-band feed comprising a dual-depth corrugated launcher and a conventional corrugated horn
- Author(s): S. Ghosh ; E. Kühn ; A. Prata
- Source: Electronics Letters, Volume 20, Issue 13, p. 532 –533
- DOI: 10.1049/el:19840369
- Type: Article
- + Show details - Hide details
-
p.
532
–533
(2)
The design of a corrugated feed is presented which has a simplified configuration in comparison to a feed with dual-depth corrugations over its full length. It exhibits excellent electrical performance which is compatible with the requirements for frequency reuse application in satellite communication antennas. The feed consists of a short dual-depth corrugated launcher and a conventional corrugated horn. Important electrical characteristics of such a feed designated for operation in the standard bands of 4 and 6 GHz satellite communication links are presented.
Novel refractometer using a tapered optical fibre
- Author(s): A. Kumar ; T.V.B. Subrahmanyam ; A.D. Sharma ; K. Thyagarajan ; B.P. Pal ; I.C. Goyal
- Source: Electronics Letters, Volume 20, Issue 13, p. 534 –535
- DOI: 10.1049/el:19840370
- Type: Article
- + Show details - Hide details
-
p.
534
–535
(2)
Using multimode tapered optical fibre a novel fibre-optic refractometer has been proposed. It can measure refractive indices to a high degree of accuracy and requires very little amount of sample for measurements. It is shown that, in principle, this refractometer can be designed to measure any refractive index less than that of the core with a better sensitivity than that of the earlier reported fibre refractometers.
Measurement of linewidth and FM-noise spectrum of 1.52 μm InGaAsP lasers
- Author(s): K. Kikuchi ; T. Okoshi ; R. Arata
- Source: Electronics Letters, Volume 20, Issue 13, p. 535 –536
- DOI: 10.1049/el:19840371
- Type: Article
- + Show details - Hide details
-
p.
535
–536
(2)
The linewidth of 1.52 μm InGaAsP lasers was measured as a function of the output power. The result shows that the linewidth is about 15 MHz when the output power is 1 mW. The FM-noise spectrum was also measured in the frequency range from 10 Hz to 100 MHz. The measured spectrum consists of the 1/f-noise and white-noise components. The linewidth calculated from the FM-noise spectrum is in good agreement with the measured value.
Polysilicon base contact in I2L transistors
- Author(s): M.H. El-Diwany and A.S. Eltoukhy
- Source: Electronics Letters, Volume 20, Issue 13, p. 536 –538
- DOI: 10.1049/el:19840372
- Type: Article
- + Show details - Hide details
-
p.
536
–538
(3)
The extrinsic base diode minority carrier distribution under poly in I2L transistors can be calculated (or computed) in terms of an effective surface recombination velocity Seff at the mono/poly silicon interface similar to the oxide and metal cases. An analytical expression for Seff as a function of polysilicon parameters is given and compared to numerical solutions. Calculated ring speeds show a slight improvement in propagation delay for metal contact compared to poly contact.
GCF extraction from multivariable polynomials using indirect Padé approximation
- Author(s): M. Messiter and Y. Shamash
- Source: Electronics Letters, Volume 20, Issue 13, p. 538 –540
- DOI: 10.1049/el:19840373
- Type: Article
- + Show details - Hide details
-
p.
538
–540
(3)
The greatest common factor (GCF) is extracted from multi-variable polynomials using an ‘indirect’ method for computing generalised Padé-type approximations of multivariable rational functions. The algorithm is computationally easy and conceptually very simple. An example is given to illustrate the method.
Experimental investigation of a new spectrometer comprising a Josephson junction
- Author(s): U. Stumper ; J.H. Hinken ; W. Richter ; D. Schiel ; L. Grimm
- Source: Electronics Letters, Volume 20, Issue 13, p. 540 –541
- DOI: 10.1049/el:19840374
- Type: Article
- + Show details - Hide details
-
p.
540
–541
(2)
It is experimentally shown that an Nb-Nb point contact Josephson junction can be used as a very sensitive spectrometer of good frequency resolution in the range of millimetre waves by applying an inverse Hilbert transform on a characteristic deformation of its I/V characteristic caused by the absorbed RF energy.
Simple power control circuit
- Author(s): K.M. Ibrahim and M.A.H. Abdul-Karim
- Source: Electronics Letters, Volume 20, Issue 13, p. 541 –543
- DOI: 10.1049/el:19840375
- Type: Article
- + Show details - Hide details
-
p.
541
–543
(3)
A simple circuit that gives a linear relation between input DC control voltage and an average load voltage is described. This circuit depends on a simple vector difference circuit based on inverse sine evaluation. The load voltage is found to be independent of the supply line voltage and of frequency fluctuations.
Characterisation of graded single-mode fibres by fundamental-mode spot size variation
- Author(s): J.H. Povlsen
- Source: Electronics Letters, Volume 20, Issue 13, p. 543 –545
- DOI: 10.1049/el:19840376
- Type: Article
- + Show details - Hide details
-
p.
543
–545
(3)
In the letter the accuracy of ESI parameters extracted from spectral spot size behaviour is examined. Different spot size definitions are considered and it is found that the equivalent cutoff wavelength, even for profiles far from a step, agrees reasonably with the mathematically defined cutoff wavelength.
Comment: Noise-cancelling switched-capacitor (SC) filtering technique
- Author(s): B. Furrer and J. Goette
- Source: Electronics Letters, Volume 20, Issue 13, p. 545 –546
- DOI: 10.1049/el:19840377
- Type: Article
- + Show details - Hide details
-
p.
545
–546
(2)
Reply: Noise-cancelling switched-capacitor (SC) filtering technique
- Author(s): M.A. Copeland and K.K.K. Lam
- Source: Electronics Letters, Volume 20, Issue 13, page: 546 –546
- DOI: 10.1049/el:19840378
- Type: Article
- + Show details - Hide details
-
p.
546
(1)
Integrated bipolar 4:1 time-division multiplexer for bit rates up to 3 Gbit/s
- Author(s): H.-M. Rein and R.H. Derksen
- Source: Electronics Letters, Volume 20, Issue 13, p. 546 –548
- DOI: 10.1049/el:19840379
- Type: Article
- + Show details - Hide details
-
p.
546
–548
(3)
7000 m deep sea trial of OS-280M optical-fibre submarine cable system
- Author(s): Y. Ishikawa ; Y. Niiro ; K. Takai ; H. Wakabayashi
- Source: Electronics Letters, Volume 20, Issue 13, p. 548 –549
- DOI: 10.1049/el:19840380
- Type: Article
- + Show details - Hide details
-
p.
548
–549
(2)
The letter reports the 7000 m deep sea trial of an experimental OS-280M optical-fibre submarine cable system, consisting of a 24 km optical cable and two monolithic IC submarine repeaters, which was successfully carried out in February 1984.
High-speed and low-power GaAs DCFL divider
- Author(s): K. Nagano ; H. Yagita ; A. Tamura ; T. Uenoyama ; H. Tsujii ; K. Nishii ; T. Sakashita ; T. Onuma
- Source: Electronics Letters, Volume 20, Issue 13, p. 549 –550
- DOI: 10.1049/el:19840381
- Type: Article
- + Show details - Hide details
-
p.
549
–550
(2)
High-speed and low-power divide-by-252 or -256 circuit have been fabricated by using high-transconductance GaAs enhancement-mode MESFETs. This variable-modulus divider is able to operate up to a clock frequency of 3.7 GHz. The total power dissipation at the maximum frequency is 180 mW, and it is as low as 42 mW and 30 mW at 3 GHz and 2.5 GHz, respectively.
Absorption loss in optical fibres due to hydrogen
- Author(s): K. Mochizuki ; Y. Namihira ; M. Kuwazuru
- Source: Electronics Letters, Volume 20, Issue 13, p. 550 –552
- DOI: 10.1049/el:19840382
- Type: Article
- + Show details - Hide details
-
p.
550
–552
(3)
It is shown that OD formation in optical fibres due to the deuterium molecule can become a barrier to OH formation in optical fibres exposed to hydrogen, although it cannot be a barrier to the absorption due to the hydrogen molecule in a fibre. The mechanism is discussed.
High-sensitivity Hi-Lo germanium avalanche photodiode for 1.5 μm-wavelength optical communication
- Author(s): M. Niwa ; Y. Tashiro ; K. Minemura ; H. Iwasaki
- Source: Electronics Letters, Volume 20, Issue 13, p. 552 –553
- DOI: 10.1049/el:19840383
- Type: Article
- + Show details - Hide details
-
p.
552
–553
(2)
A high-sensitivity small-detectable-area Hi-Lo germanium avalanche photodiode (Ge APD) was developed for use in 1.55 μm wavelength optical communication systems. This device has Hi-Lo (p+nn−) impurity profile. Its detectable area is 30 μm in diameter for single-mode optical-fibre use. The minimum average received signal level obtained was −40.5 dBm (at 450 Mbit/s, λ = 1.55 μm, BER = 10−9, return-to-zero). This is 0.7 dB better than the value for the 80μm diameter similar structure Ge APD.
Coupling strength and influence in cleaved-coupled-cavity lasers
- Author(s): W. Streifer ; D. Yevick ; T.L. Paoli ; R.D. Burnham
- Source: Electronics Letters, Volume 20, Issue 13, p. 553 –555
- DOI: 10.1049/el:19840384
- Type: Article
- + Show details - Hide details
-
p.
553
–555
(3)
The coupling between the segments of a C3 laser is calculated, and threshold plots for small gap perturbations are shown to differ substantially. Cases of strong, intermediate and weak coupling are compared.
Mode attenuation at 1.39 μm in graded-index fibres
- Author(s): A.V. Belov ; E.M. Dianov ; A.N. Guryanov ; V.F. Hopin
- Source: Electronics Letters, Volume 20, Issue 13, p. 555 –556
- DOI: 10.1049/el:19840385
- Type: Article
- + Show details - Hide details
-
p.
555
–556
(2)
The differential mode attenuation αm(λ) in the spectral region of OH absorption (1.2–1.6 μm) has been studied in SiO2/GeO2 core graded-index fibres. It was found that the mode attenuation due to OH absorption Km(λ) at 1.39 μm had its maximum in the fibre core centre. The comparison between the calculated and measured Km(λ) at this wavelength could be used for the determination of OH-ion distribution profile in optical fibres.
Model for optical density of films with grain clustering
- Author(s): A.S. Tavildar ; H.M. Gupta ; S.N. Gupta
- Source: Electronics Letters, Volume 20, Issue 13, p. 556 –558
- DOI: 10.1049/el:19840386
- Type: Article
- + Show details - Hide details
-
p.
556
–558
(3)
In photographic emulsions, grains have been reported to be clustered. A model for the observed optical density in the presence of grain clustering has been developed.
Comments on the synthesis of dual offset reflector systems
- Author(s): F. Brickell and B.S. Westcott
- Source: Electronics Letters, Volume 20, Issue 13, p. 558 –559
- DOI: 10.1049/el:19840387
- Type: Article
- + Show details - Hide details
-
p.
558
–559
(2)
Comments are made about the theoretical significance of two approaches to the synthesis of dual offset reflector systems under geometrical optics assumptions.
Low-threshold current density InGaAsP/InP injection lasers with three-layer-waveguide double heterostructure (jth≃0.5 kA/cm2 at 300 K)
- Author(s): A.E. Drakin ; P.G. Eliseev ; B.N. Sverdlov ; L.M. Dolginov ; E.G. Shevchenko
- Source: Electronics Letters, Volume 20, Issue 13, p. 559 –561
- DOI: 10.1049/el:19840388
- Type: Article
- + Show details - Hide details
-
p.
559
–561
(3)
Double heterostructure InGaAsP/InP lasers with a three-layer waveguide (or ‘separate-confinement’ DH) have been prepared by the LPE method with a thin active layer. A decrease in threshold current density has been observed up to 512 A/cm2 in a four-sided cleaved diode at room temperature. CW operation of broad-area diodes is obtained in the pumping current range up to 2.5 A. Calculations of threshold current density for these laser structures are presented.
Surface electrical breakdown with white-light emission on semi-insulating GaAs substrates
- Author(s): H. Hasegawa ; T. Kitagawa ; T. Sawada ; H. Ohno
- Source: Electronics Letters, Volume 20, Issue 13, p. 561 –562
- DOI: 10.1049/el:19840389
- Type: Article
- + Show details - Hide details
-
p.
561
–562
(2)
Electrical breakdown on surface passivated semi-insulating GaAs substrates is shown to be accompanied with white-light emission from ohmic electrode edges. It cannot be explained by the previous space-charge-limited current model. A new model is proposed in which filling of states near the surface produces an intense electric field near the anode edge and triggers an avalanche.
Low-noise operational amplifiers using bipolar input transistors in a standard metal gate CMOS process
- Author(s): S. Gustafsson ; R. Sundblad ; C. Svensson
- Source: Electronics Letters, Volume 20, Issue 13, p. 563 –564
- DOI: 10.1049/el:19840390
- Type: Article
- + Show details - Hide details
-
p.
563
–564
(2)
Two low-noise operational amplifiers have been designed. The amplifiers include a bipolar input stage which gives the advantage against conventional CMOS amplifiers of low noise and low offset. The op-amplifiers also show a low input current compared with other bipolar amplifiers.
1.5 W 11–17 GHz GaAs MESFET power amplifier utilising lumped-element matching techniques
- Author(s): J.B. Klatskin
- Source: Electronics Letters, Volume 20, Issue 13, p. 564 –565
- DOI: 10.1049/el:19840391
- Type: Article
- + Show details - Hide details
-
p.
564
–565
(2)
The development of GaAs MESFET wideband power amplifiers requires the use of small size components and novel device packaging technology. We recently fabricated amplifier modules capable of 24.5 dBm output covering the 8.0–17 GHz band. The circuit utilised the lumped-element format. The modules were than power combined into a 31.8 dBm power amplifier.
Novel parasitic-insensitive wave SC filter
- Author(s): K. Chen and S. Eriksson
- Source: Electronics Letters, Volume 20, Issue 13, p. 565 –567
- DOI: 10.1049/el:19840392
- Type: Article
- + Show details - Hide details
-
p.
565
–567
(3)
Parasitic-insensitive wave SC filters can be realised, as discussed in the letter. If four nonoverlapping clock signals are used, the number of operational amplifiers can be made reasonably low. Experimental results of a fifth-order lowpass filter are presented.
Electro-optic modulator on Ti:LiNbO3 with very low drive voltage
- Author(s): C. Duchet and R. Martin
- Source: Electronics Letters, Volume 20, Issue 13, p. 567 –568
- DOI: 10.1049/el:19840393
- Type: Article
- + Show details - Hide details
-
p.
567
–568
(2)
The sensitivity of a Ti:LiNbO3 waveguide Mach-Zehnder modulator is improved by a new electrode configuration. With 22 mm-long electrodes, a drive voltage as low as 0.35 V is sufficient for complete modulation. This modulator should prove useful in fibre-optics sensing applications.
Photodisplacement microscopy
- Author(s): J.I. Burov and K.P. Bransalov
- Source: Electronics Letters, Volume 20, Issue 13, p. 568 –570
- DOI: 10.1049/el:19840394
- Type: Article
- + Show details - Hide details
-
p.
568
–570
(3)
The photodisplacement microscopy for depth probing and control of a silicon plate cross-section homogenity is developed, as the one-arm optical bridge with interference Newton fringes is used. For determining the thickness of a silicon plate and for visualising its cross-section the frequency dependence of the thermal waves penetration depth is measured.
Imaging of objects in a halfspace with unknown permittivity
- Author(s): H. Chaloupka
- Source: Electronics Letters, Volume 20, Issue 13, p. 570 –572
- DOI: 10.1049/el:19840395
- Type: Article
- + Show details - Hide details
-
p.
570
–572
(3)
A method for the imaging of objects imbedded in a dielectric halfspace of unknown permittivity is presented. For this a synthetic aperture technique with a new ‘focusing condition’ is utilised.
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article