Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 12, 7 June 1984
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Volume 20, Issue 12
7 June 1984
Temperature dependence of Hall mobility and electrical conductivity in SIMOX films
- Author(s): J. Wyncoll ; K.N. Kang ; S. Cristoloveanu ; P.L.F. Hemment ; R.P. Arrowsmith
- Source: Electronics Letters, Volume 20, Issue 12, p. 485 –486
- DOI: 10.1049/el:19840337
- Type: Article
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Transport data obtained on SIMOX films between 77 and 300 K are qualitatively different from those derived for bulk silicon. Results suggest a strong nonuniformity of carrier mobility: the uppermost part of the SIMOX layer is of comparable quality to bulk Si, but near the buried oxide there is a degradation, confirmed by prevailing coulombian scattering even at 300 K.
Fibre-optic recirculating analogue delay line
- Author(s): C.C. Wang ; R.P. Moeller ; W.K. Burns ; I.P. Kaminow
- Source: Electronics Letters, Volume 20, Issue 12, p. 486 –488
- DOI: 10.1049/el:19840338
- Type: Article
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A 0.5 ms delay line with a time-bandwidth product of > 105 is demonstrated by recirculating a 2 ns pulse around a 20.4 km single-mode fibre five times. Analogue signal regeneration is employed after each recirculation. System dynamic range, signal/noise ratio and cancellation ratio for a noncoherent moving target indicator radar application are given.
New analogue switch circuit having very low forward resistance
- Author(s): J.L. Huertas ; A. Rodriguez-Vazquez ; A. Rueda
- Source: Electronics Letters, Volume 20, Issue 12, p. 488 –489
- DOI: 10.1049/el:19840339
- Type: Article
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A new circuit realisation for an analogue switch is reported. The main feature of the proposed design is the low value of the forward resistance as compared with commercial switches. Experimental data confirming the performance of the circuit are also included.
GaP/phthalocyanine Langmuir–Blodgett film electroluminescent diode
- Author(s): J. Batey ; M.C. Petty ; G.G. Roberts ; D.R. Wight
- Source: Electronics Letters, Volume 20, Issue 12, p. 489 –491
- DOI: 10.1049/el:19840340
- Type: Article
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The electrical and electroluminescent properties of Au/phthalocyanine Langmuir-Blodgett film/GaP diodes are reported. The electroluminescence conversion efficiency is shown to depend on the number of Langmuir-Blodgett layers and is a maximum for a 5.6 nm-thick film. This optimum can be explained in terms of simple tunnel injection theory. A preliminary investigation reveals that the devices are relatively stable and that the maximum power conversion efficiency approaches that of an unencapsulated p-n junction diode.
Electron transport through the MOCVD grown GaAs/AlGaAs/GaAs heterojunction barrier
- Author(s): I. Hase ; H. Kawai ; K. Kaneko ; N. Watanabe
- Source: Electronics Letters, Volume 20, Issue 12, p. 491 –492
- DOI: 10.1049/el:19840341
- Type: Article
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We investigated the current/voltage characteristics of n+GaAs/undoped AlxGa1−xAs (200 A)/n+GaAs heterostructures grown by the metalorganic chemical vapour deposition (MOCVD) method between 77 K and 300 K. Both the voltage dependence and the temperature dependence of the current were in good agreement over a wide current range with the calculated results of the tunnelling and thermionic emission current.
Analysis of high-speed and high-gain n-InP transferred electron effect photodetector
- Author(s): A. Aishima and V. Fukushima
- Source: Electronics Letters, Volume 20, Issue 12, p. 492 –494
- DOI: 10.1049/el:19840342
- Type: Article
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By illuminating the small area of the semitransparent Schottky barrier cathode of an n-InP diode with above-bandgap radiation, the travelling dipole domain can be triggered. The dipole domain transversely extends with a velocity of 108 cms−1. The nature of high travelling speed and high extension speed of the dipole domain can be used for achieving a high-speed and high-gain n-InP photodetector.
Punctured PN codes
- Author(s): W.K. Han and F. Hemmati
- Source: Electronics Letters, Volume 20, Issue 12, p. 494 –495
- DOI: 10.1049/el:19840343
- Type: Article
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It is shown that the maximum absolute value of cross-correlation between two pseudorandom noise (PN) sequences can be reduced by deleting those dimensions of the code that contribute to high correlations. The cross-correlation of optimum punctured PN codes to length 1023 is numerically computed.
Polarisation-independent modulators with Ti:LiNbO3 strip waveguides
- Author(s): Y. Bourbin ; M. Papuchon ; S. Vatoux ; J.M. Arnoux ; M. Werner
- Source: Electronics Letters, Volume 20, Issue 12, p. 496 –497
- DOI: 10.1049/el:19840344
- Type: Article
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In the letter we demonstrate experimentally the operation of a polarisation-independent amplitude modulator based on the evolution of the electro-optical modulation efficiency against the position of the mode with respect to the electrode system. For a 20 mm-long Mach-Zehnder interferometer command voltages of 5 V have been obtained at the polarisation-insensitive configuration.
New family of active RC variable equalisers
- Author(s): E.A. Talkhan ; A.M. Soliman ; T.H. El-Fayoumi
- Source: Electronics Letters, Volume 20, Issue 12, p. 497 –498
- DOI: 10.1049/el:19840345
- Type: Article
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A new family of active variable equalisers is introduced. The proposed variable equaliser transfer function is generated from Bode's classical transfer function using a new mathematical transformation. The new circuit uses a single operational amplifier and the required full range of variation is obtained by varying a single resistor Rv from zero to Ro (a reference resistance). The variable equaliser circuit requires a single shaping grounded impedance for realisation.
120 km lightwave transmission experiment at 1 Gbit/s using a new long-wavelength avalanche photodetector
- Author(s): R.A. Linke ; B.L. Kasper ; J.C. Campbell ; A.G. Dentai ; I.P. Kaminow
- Source: Electronics Letters, Volume 20, Issue 12, p. 498 –499
- DOI: 10.1049/el:19840346
- Type: Article
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A transmission experiment was performed to study the high-speed potential of a long-distance gigabit lightwave system employing a single-frequency 1.5 μm laser and a new long wavelength III–V avalanche photodetector. A 120 km length of standard production single mode fibre was used in the test, in which a bit error rate of 2×10−10 was achieved at 1 Gbit/s. This distance is the longest reported to date for rates higher than 500 Mbit/s, and the product of bit rate and distance (120 km Gbit/s) is the highest value achieved for any bit rate. The distance was limited by the 32.3 dB loss of the transmission path together with a total of 5.6 dB in power penalties associated with chirp broadening of the laser line.
Silicon-on-insulator CMOS transistors in dual electron beam recrystallised polysilicon
- Author(s): G.F. Hopper ; J.R. Davis ; R.A. McMahon ; H. Ahmed
- Source: Electronics Letters, Volume 20, Issue 12, p. 500 –501
- DOI: 10.1049/el:19840347
- Type: Article
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Discrete MOS transistors and CMOS test circuits have been fabricated on silicon-on-insulator substrates prepared by recrystallisation of polysilicon on silicon dioxide by the dual electron beam technique. Channel mobilities in seeded material are found to be equal to those obtained in bulk silicon devices. In unseeded material hole mobility remains the same, but electron mobility is lower.
Pressure sensitivity prediction of polarisation IR fibre sensors
- Author(s): V.N. Perminova and V.K. Sysoev
- Source: Electronics Letters, Volume 20, Issue 12, p. 501 –502
- DOI: 10.1049/el:19840348
- Type: Article
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The pressure sensitivity evaluations of polarisation IR fibre sensors are studied in the letter. It is shown that such sensors are one to two orders of magnitude more sensitive than those on a base of silica fibres.
InGaAs Gunn oscillators
- Author(s): W. Kowalsky and A. Schlachetzki
- Source: Electronics Letters, Volume 20, Issue 12, p. 502 –503
- DOI: 10.1049/el:19840349
- Type: Article
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Measurements with Gunn oscillators made from epitaxial layers of the ternary InGaAs lattice matched to InP are reported. Operation in the domain mode was chosen. First results are given demonstrating the potential of this alloy for high-efficiency Gunn devices.
Modal noise reduction of laser diodes with specific thickness coating
- Author(s): K. Nawata ; S. Tomita ; K. Wakita
- Source: Electronics Letters, Volume 20, Issue 12, p. 504 –505
- DOI: 10.1049/el:19840350
- Type: Article
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A low facet reflectivity laser diode is able to oscillate in multilongitudinal modes, and has a high relative intensity noise (RIN) and reduces mode hopping noise. By introducing the electron-cyclotron-resonance (ECR) plasma deposition method, a good facet coating film has been obtained. We have demonstrated that a specific coated laser has very low modal noise characteristics even under direct analogue intensity modulation.
Point measurements in the optimising control of large-scale industrial processes
- Author(s): J.E. Ellis ; H. Michalska ; P.D. Roberts
- Source: Electronics Letters, Volume 20, Issue 12, p. 505 –506
- DOI: 10.1049/el:19840351
- Type: Article
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A decentralised iterative scheme for the optimising control of large-scale systems is described which involves the use of a modified performance objective. Rather than using models or the process directly, operations on the modified objective index are performed at points generated by the iterative scheme.
Cryogenic GaAs FET amplifier
- Author(s): S. Withington
- Source: Electronics Letters, Volume 20, Issue 12, p. 506 –508
- DOI: 10.1049/el:19840352
- Type: Article
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An extremely low noise, cryogenic, gallium arsenide field-effect-transistor amplifier has been developed for the frequency range 3.7 to 4.2 GHz. The amplifier has an average noise temperature of 25 K, with an associated gain of 21 dB, when cooled to a physical temperature of 77 K.
Improved offset-compensation schemes for switched-capacitor circuits
- Author(s): G.C. Temes and K. Haug
- Source: Electronics Letters, Volume 20, Issue 12, p. 508 –509
- DOI: 10.1049/el:19840353
- Type: Article
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Novel switched-capacitor stages which are free from the effects of op-amp DC offset voltage are described. The op-amps used in the stage need not slew between the desired output voltage and the offset voltage as in previously described offset-free circuits. The use of the new scheme in general applications is also discussed.
High-power single longitudinal mode operation of twin-channel substrate mesa guide (TCSM) lasers
- Author(s): D.E. Ackley
- Source: Electronics Letters, Volume 20, Issue 12, p. 509 –511
- DOI: 10.1049/el:19840354
- Type: Article
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Improved TCSM lasers with antireflection coatings have been developed that operate in a stable zero-order mode to output powers of 80 mW CW. The devices operated in a stable single longitudinal mode to powers >65 mW. This is believed to be the highest single-mode power ever reported from an individual diode laser.
Randomisation of pulse-rate-encoded signals for use in stochastic computers
- Author(s): C.K. Huscroft and P.D. Lawrence
- Source: Electronics Letters, Volume 20, Issue 12, p. 511 –512
- DOI: 10.1049/el:19840355
- Type: Article
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A simple circuit is described for randomising pulse-rate-encoded signals thus permitting their use as multiplicands in a stochastic computer. The circuit is compared to the ADDIE which can also perform such randomisation.
Long-term loss stability of single-mode optical fibres exposed to hydrogen
- Author(s): N.J. Pitt and A. Marshall
- Source: Electronics Letters, Volume 20, Issue 12, p. 512 –514
- DOI: 10.1049/el:19840356
- Type: Article
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The rate of increase in loss in single-mode optical fibres exposed to hydrogen at temperatures up to 150°C has been determined. Extrapolation down to ambient temperature of effects other than that due to interstitial hydrogen indicates that slow long-term loss increments at 1310 nm will remain less than 0.02 dB/km after 25 yr at 20°C in one atmosphere of hydrogen.
Strong RSA keys
- Author(s): J. Gordon
- Source: Electronics Letters, Volume 20, Issue 12, p. 514 –516
- DOI: 10.1049/el:19840357
- Type: Article
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A simple method is given for finding strong primes for use in conjunction with the RSA Public Key Cryptosystem. A strong prime p is a large prime satisfying the following: (a) p = 1 mod r; (b) p = s−1 mod s; (c) r = 1 mod t; where r, s and t are all large, random primes. It is shown that the problem of finding strong, random, large primes is only 19% harder than finding random, large primes.
Multiple fault detection in fanout-free combinational networks
- Author(s): C.R.P. Hartmann ; W.H. Debany ; P.K. Varshney
- Source: Electronics Letters, Volume 20, Issue 12, p. 516 –517
- DOI: 10.1049/el:19840358
- Type: Article
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In this letter we show that an algorithm developed by Berger and Kohavi for generating minimal length fault-detection test sets for single permanent faults in fanout-free combinational logic networks also detects all possible multiple faults in the network.
Mobile radio propagation in Auckland at 927 MHz
- Author(s): A.G. Williamson ; B. Egan ; J.W. Chester
- Source: Electronics Letters, Volume 20, Issue 12, p. 517 –518
- DOI: 10.1049/el:19840359
- Type: Article
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Field trials in Auckland have shown that in the region 800 m to 5 km from a 50 m elevated base-station propagation loss may be characterised by a fourth-power law distance dependency and may be modelled as plane earth propagation loss plus excess loss of 45.6 dB. In the region closer to the base station, the propagation loss has a different characteristic. A ‘piecewise’ model is proposed.
Lateral resurfed COMFET
- Author(s): M. Darwish and K. Board
- Source: Electronics Letters, Volume 20, Issue 12, p. 519 –520
- DOI: 10.1049/el:19840360
- Type: Article
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A lateral resurfed COMFET structure is proposed. The conductivity of the drift region of the device is modulated as in the case of vertical COMFET. However, the maximum operating current and switching speed are expected to be several times that of the vertical structure because of the collection of excess minority carriers by the p−-substrate and the narrow width of the n− epitaxial layer.
Equivalent-step-index parameters for single-mode fibres having a power-law profile
- Author(s): P.Y.P. Chen
- Source: Electronics Letters, Volume 20, Issue 12, p. 520 –522
- DOI: 10.1049/el:19840361
- Type: Article
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An approach using three transformation coefficients to derive the equivalent-step-index parameters is described. Compared with those obtained using two transformation coefficients, improved predictions of transmission characteristics may be achieved. This is illustrated by examples involving power-law profiles.
Improvement in radiation characteristics of coaxial feeds using a quarter-wavelength choke
- Author(s): A.A. Kishk ; L. Shafai ; A. Ittipiboon
- Source: Electronics Letters, Volume 20, Issue 12, p. 522 –523
- DOI: 10.1049/el:19840362
- Type: Article
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The radiation field of a coaxial waveguide having a quarter-wavelength choke is determined numerically. It is shown that, similarly to the case of a circular waveguide, the introduction of the choke lowers both the side and back radiation and improves its crosspolarisation and the gain factor.
Erratum: Magnetically tunable wideband magnetostatic-surface-wave filter using Ga-YIG film
- Author(s): N.S. Chang
- Source: Electronics Letters, Volume 20, Issue 12, page: 523 –523
- DOI: 10.1049/el:19840363
- Type: Article
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