Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 20, Issue 11, 24 May 1984
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Volume 20, Issue 11
24 May 1984
Frequency trimming for high-frequency SAW device using ultraviolet light
- Author(s): K. Setsune ; O. Yamazaki ; K. Wasa
- Source: Electronics Letters, Volume 20, Issue 11, p. 433 –434
- DOI: 10.1049/el:19840300
- Type: Article
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A new technique for frequency trimming of surface-acoustic-wave (SAW) devices is demonstrated using ultraviolet light. Irradiation by ultraviolet light of a very thin SiO2 film which is fabricated on a quartz substrate makes it possible to adjust the operation frequency within an accuracy of better than ±10 kHz at 900 MHz with an insertion loss increase of less than 1 dB. This technique is applied successfully to a 668 MHz SAW resonator.
Harmonic distortion due to laser modulation in multimode fibre optic analogue transmission
- Author(s): K. Kaede ; R. Ishikawa ; K. Minemura ; R. Lang ; T. Furuse ; A. Ueki
- Source: Electronics Letters, Volume 20, Issue 11, p. 434 –435
- DOI: 10.1049/el:19840301
- Type: Article
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–435
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The effect of laser-diode frequency chirping on harmonic distortions in multimode fibre analogue transmission with direct intensity modulation was clarified experimentally with results in good agreement with the theory. The results show that the harmonic distortion can be greatly reduced by the reduction of the frequency chirping which accompanies diode-laser intensity modulation.
Proposal for a digital pseudorandom number generator
- Author(s): C.P. Downing
- Source: Electronics Letters, Volume 20, Issue 11, p. 435 –436
- DOI: 10.1049/el:19840302
- Type: Article
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A digital hardware implementation of a linear congruential sequence generator using shift and add techniques of multiplication is described. The sequence is of long period, low serial correlation and is rectangularly distributed. The method has certain advantages over conventional feedback shift register techniques.
Bandwidth limitations of log-periodic microstrip patch antenna arrays
- Author(s): P.S. Hall
- Source: Electronics Letters, Volume 20, Issue 11, p. 437 –438
- DOI: 10.1049/el:19840303
- Type: Article
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Results are presented for the frequency dependence of the propagation constant of uniform microstrip patch arrays that allow the bandwidth limitations of log-periodic patch arrays to be deduced. It is found that direct coupling of the patch to the feed line limits the log-periodic bandwidth to about a 2:1 frequency range. However, the introduction of series reactance into the equivalent circuit such as by the use of overlaid patches indicate that log-periodic action over a very wide bandwidth is possible which will then be limited by the uniform substrate and production tolerances.
Laser-diode optical switch module
- Author(s): H. Kataoka and M. Ikeda
- Source: Electronics Letters, Volume 20, Issue 11, p. 438 –439
- DOI: 10.1049/el:19840304
- Type: Article
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–439
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A pigtail structure laser-diode optical switch module was first fabricated. A 6 dB gain in the ‘on’ state and 82 dB isolation were obtained.
Experimental studies of metal-clad tapered optical waveguides
- Author(s): S. Sakano and H. Matsumura
- Source: Electronics Letters, Volume 20, Issue 11, p. 439 –441
- DOI: 10.1049/el:19840305
- Type: Article
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–441
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Propagation characteristics of metal-clad optical waveguides with low index dielectric tapered buffer layer have been experimentally studied. The extinction ratio of TE- and TM-modes depends strongly on the tapered angle θ and the length L. The extinction ratio of 22 dB for θ = 0.0015 rad and L = 0.35 mm was observed.
140 GHz broadband crossbar stripline mixers with over 20 GHz instantaneous RF bandwidth
- Author(s): C. Nguyen and K. Chang
- Source: Electronics Letters, Volume 20, Issue 11, page: 441 –441
- DOI: 10.1049/el:19840306
- Type: Article
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The letter presents the design and performance of a 140 GHz broadband crossbar stripline mixer using beam-lead diodes. With the LO fixed at 140 GHz, a conversion loss of 7–11 dB has been achieved with the RF swept from 140 to 160 GHz, and 6 to 8 dB with the RF swept from 133 to 147 GHz.
Fabrication and characteristics of ion-implanted GaAs/GaAlAs integrated injection logic inverter
- Author(s): P. Narozny and H. Beneking
- Source: Electronics Letters, Volume 20, Issue 11, p. 442 –443
- DOI: 10.1049/el:19840307
- Type: Article
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–443
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An integrated injection logic inverter has been realised in GaAs/GaAlAs material using ion implantation and Zn diffusion. Si ions have been implanted to merge the current source with the switching transistor, whereas the Be implantation provides the base contact. The shallow p+-emitter of the pnp current source has been fabricated by Zn diffusion. Instead of a lateral pnp transistor, which is typical in I2L technology, a vertical arrangement has been used. This type of transistor shows a better current efficiency and can be fabricated with a better uniformity in terms of base width. First results of an I2L inverter with a vertical pnp transistor are shown.
Fading rates in coherent OTDR
- Author(s): P. Healey
- Source: Electronics Letters, Volume 20, Issue 11, p. 443 –444
- DOI: 10.1049/el:19840308
- Type: Article
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The fading rates of the backscatter signal from a single-mode optical fibre under quasimonochromatic pulse excitation are measured experimentally using a homodyne OTDR system. A method of increasing the fading rates to facilitate efficient signal averaging is discussed.
Annealing of Mg implants in GaAs using incoherent radiation
- Author(s): R.T. Blunt ; R. Szweda ; M.S.M. Lamb ; A.G. Cullis
- Source: Electronics Letters, Volume 20, Issue 11, p. 444 –446
- DOI: 10.1049/el:19840309
- Type: Article
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–446
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Results of incoherent light transient annealing of Mg implants in GaAs are reported and compared to conventional furnace anneals. Transient anneals produced better activations, with an optimum at an annealing temperature of 800°C, due apparently to reduced outdiffusion of Mg into the encapsulating silicon nitride layer.
Low resistance alloyed ohmic contacts to Al0.48In0.52As/n+-Ga0.47In0.53As
- Author(s): P.M. Capani ; S.D. Mukherjee ; P. Zwicknagl ; J.D. Berry ; H.T. Griem ; L. Rathbun ; L.F. Eastman
- Source: Electronics Letters, Volume 20, Issue 11, p. 446 –447
- DOI: 10.1049/el:19840310
- Type: Article
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–447
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A low ohmic contact resistance metallurgy and associated alloy cycles have been developed for applications to Al0.48In0.52As/Ga0.47In0.53As MODFETs (HEMTs). The metallurgy involves sequentially evaporated Ni/Ge/Au/Ag/Au layers followed by transient thermal alloy cycles. This resulted in low transfer resistances ∼0.06 Ωmm to the underlying GalnAs layer for alloying temperatures to ∼480°C.
New mode scrambler for optical fibre measurements
- Author(s): A.K. Agarwal
- Source: Electronics Letters, Volume 20, Issue 11, p. 447 –449
- DOI: 10.1049/el:19840311
- Type: Article
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–449
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A new design of a mode scrambler for optical fibre measurements is presented. A rotation-splice technique has been used to mix the incoming mode power distribution in the fibre. The device is tested under different launch conditions to check its efficiency to produce a definite mode power distribution. Experimental results are presented.
Stress modification in optical fibre
- Author(s): P.L. Chu and T. Whitbread
- Source: Electronics Letters, Volume 20, Issue 11, p. 449 –450
- DOI: 10.1049/el:19840312
- Type: Article
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–450
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It is shown that the surface stress of an optical fibre can be controlled by either: (i) adjusting the pulling tension of the fibre during drawing process; (ii) introducing an additional stress-producing region at the start tube-sleeve interface. Formulas for the calculation of the required tension or the required area of the stress-producing region are also given.
Estimation of linewidth enhancement factor α of CSP-type AlGaAs lasers from measured correlation between AM and FM noises
- Author(s): K. Kikuchi ; T. Okoshi ; T. Kawai
- Source: Electronics Letters, Volume 20, Issue 11, p. 450 –451
- DOI: 10.1049/el:19840313
- Type: Article
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–451
(2)
A novel method for estimating the linewidth enhancement factor a of semiconductor lasers is developed. The correlation between AM and FM noises of a CSP-type AlGaAs laser was measured in the frequency range above 1 MHz. From the measured correlation, the linewidth enhancement factor α is estimated to be approximately −2.2 to −2.8.
X-band paraphase amplifier
- Author(s): M. Levent-Villegas
- Source: Electronics Letters, Volume 20, Issue 11, p. 451 –453
- DOI: 10.1049/el:19840314
- Type: Article
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–453
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A design method for paraphase amplifiers is described. The feasibility of balun action with gain is demonstrated by means of a paraphase amplifier over the range 9–11 GHz with a gain difference between the two ways of less than 0.9 dB and deviation from antiphase of less than ±3°.
New low-loss broadband SAW filter using unidirectional IDTs with U-shaped MSCs
- Author(s): M. Hikita ; H. Kojima ; T. Tabuchi ; Y. Kinoshita
- Source: Electronics Letters, Volume 20, Issue 11, p. 453 –454
- DOI: 10.1049/el:19840315
- Type: Article
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453
–454
(2)
A new low-loss broadband SAW filter is presented. A new configuration using one pair of electrically connected IDTs with an optimum number of fingers, as well as unidirectional IDTs with U-shaped MSCs, is described. Experimental results with bandwidth as wide as 10% and loss as low as 3 dB are achieved. Very accurate computer-aided design of a low-loss filter with MSCs is obtained.
Computer-aided simulation of power MOSFET switch-mode convertors
- Author(s): R.A. Minasian
- Source: Electronics Letters, Volume 20, Issue 11, p. 454 –456
- DOI: 10.1049/el:19840316
- Type: Article
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454
–456
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A computer-aided modelling procedure for power MOSFET switching convertors is reported. Results show dynamic turn-on and turn-off device waveforms, peak stresses, switching trajectory and transient switching losses. Excellent agreement is demonstrated between predicted and measured switching characteristics on an experimental high-frequency high-efficiency convertor.
Generalisation of the partial-power law (Brown's identity) to waveguides with lossy media
- Author(s): E.F. Kuester
- Source: Electronics Letters, Volume 20, Issue 11, p. 456 –457
- DOI: 10.1049/el:19840317
- Type: Article
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–457
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The partial-power law, otherwise known as Brown's identity, which relates the product of the phase velocity of a mode on a lossless waveguide to the time-average power and momentum carried by the mode, is generalised to be applicable to lossy waveguides as well.
Comment: Radiometer input circuit requirements for microwave thermography
- Author(s): A.R. Gillespie
- Source: Electronics Letters, Volume 20, Issue 11, page: 457 –457
- DOI: 10.1049/el:19840318
- Type: Article
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Reply: Radiometer input circuit requirements for microwave thermography
- Author(s): D.V. Land
- Source: Electronics Letters, Volume 20, Issue 11, page: 458 –458
- DOI: 10.1049/el:19840319
- Type: Article
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Broadband dual-depth E-plane corrugated square waveguide polariser
- Author(s): F. Arndt ; U. Tucholke ; T. Wriedt
- Source: Electronics Letters, Volume 20, Issue 11, p. 458 –459
- DOI: 10.1049/el:19840320
- Type: Article
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–459
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The computer-aided design of a dual-depth E-plane corrugated waveguide polariser is described which achieves 90±1° differential phase shift between the TE10− and TE01− wave transmission coefficient for 11.2–14.8 GHz. The method of field expansion into suitable eigenmodes used considers the effect of higher-order-mode interaction at the step discontinuities.
InGaAs/InGaAlAs/InAlAs/InP SCH-MQW laser diodes grown by molecular-beam epitaxy
- Author(s): Y. Kawamura ; H. Asahi ; K. Wakita
- Source: Electronics Letters, Volume 20, Issue 11, p. 459 –460
- DOI: 10.1049/el:19840321
- Type: Article
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InGaAs/InGaAlAs/InAlAs/InP separate-confinement hetero-structure-multiquantum-well (SCH-MQW) laser diodes have been fabricated by molecular-beam epitaxy (MBE), and room-temperature pulsed operation at 1.57 μm has been achieved. This SCH-MQW laser is composed of InGaAs well layers, InGaAlAs quaternary barrier layers, and InAlAs and InP cladding layers.
Design and performance of groove-guide directional couplers
- Author(s): J. Meißner
- Source: Electronics Letters, Volume 20, Issue 11, p. 460 –462
- DOI: 10.1049/el:19840322
- Type: Article
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An approximate closed-form expression for the calculation of the coupling properties of groove-guide directional couplers is deduced from an exact analysis and confirmed by measurements.
n+ -GaAs/undoped GaAlAs/undoped GaAs field-effect transistor
- Author(s): K. Matsumoto ; M. Ogura ; T. Wada ; N. Hashizume ; T. Yao ; Y. Hayashi
- Source: Electronics Letters, Volume 20, Issue 11, p. 462 –463
- DOI: 10.1049/el:19840323
- Type: Article
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–463
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The first self aligned accumulation-mode GaAs MIS-like FET having an n+ -GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FETs fabricated show the threshold voltage of almost zero (V̅th = 0.035 V) and very uniform (σVth = 0.013 V) characteristics, as expected. The transconductance is as high as 170 mS/mm, which is the highest value ever reported on GaAs MIS-like FETs.
Monolithic integration of low-threshold-current 1.3 μm GaInAsP/InP DFB lasers
- Author(s): Y. Hirayama ; J. Kinoshita ; H. Furuyama ; Y. Uematsu
- Source: Electronics Letters, Volume 20, Issue 11, p. 463 –465
- DOI: 10.1049/el:19840324
- Type: Article
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Two 1.3 μm GaInAsP/InP DFB lasers with low threshold currents (28 and 29 mA) were successfully integrated. Both DFB lasers operated continuously at temperatures of up to 68°C. The 12 Å separation in wavelength between the two lasers was produced by a 2 Å difference of the grating periods. A thermal interaction between the two lasers was estimated from the shift in their wavelengths.
Efficient fibre to X-cut Ti:LiNbO3 waveguide coupling for λ = 1.32 μm
- Author(s): R.C. Alferness and M.D. Divino
- Source: Electronics Letters, Volume 20, Issue 11, p. 465 –466
- DOI: 10.1049/el:19840325
- Type: Article
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While efficient fibre-waveguide coupling has been achieved for titanium-diffused waveguides on Z-cut Y-propagating lithium niobate crystals, previously reported results for coupling to waveguides on non-Z-cut crystals have been poor. Here we report total fibre-waveguide-fibre insertion losses as low as −1.35 dB for ∼l.5 cm-long waveguides on X-cut Y-propagating lithium niobate—the preferable orientation for polarisation conversion devices. The losses are only slightly higher than the best value for Z-cut crystals (∼ −1 dB) due to the larger waveguide mode eccentricity.
Mobility in n-(Al, Ga)As/GaAs heterojunctions at moderate electric fields
- Author(s): D. Chattopadhyay
- Source: Electronics Letters, Volume 20, Issue 11, p. 466 –468
- DOI: 10.1049/el:19840326
- Type: Article
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–468
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Hot-electron mobilities in (Al, Ga)As/GaAs single hetero-structures at 77 and 300 K are calculated for fields below 500 V/cm. Polar optic and acoustic deformation potential phonon scattering are considered, and intra- and inter-sub-band transitions in the first two sub-bands are included. The strong electron-electron interaction is assumed to enforce a displaced Maxwellian distribution function. The calculated results mostly explain the recently observed field variation of mobility.
Tribroken-line dipole
- Author(s): Du Jia-Cong and Zhong-Pei Zhang
- Source: Electronics Letters, Volume 20, Issue 11, p. 468 –469
- DOI: 10.1049/el:19840327
- Type: Article
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A new type of antenna structure that has a radiation performance similar to those of shaped wire antennas with maximum directivity is presented. The optimum geometry of the dipole with maximum directivity is found by applying the method of moments and the pattern search method. In addition, the dipole characteristics, like patterns and input impedance, are calculated and also compared with experimental results.
Monolithic integrated amplifiers for a gigabit optical repeater
- Author(s): K. Iwashita ; N. Ohta ; Y. Akazawa ; N. Ishihara ; S. Konaka
- Source: Electronics Letters, Volume 20, Issue 11, p. 470 –471
- DOI: 10.1049/el:19840328
- Type: Article
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A 1.8 Gbit/s optical receiver amplifier with five monolithic ICs is realised. An optical receiver amplifier achieved 65 dB gain with a 1.3 GHz bandwidth and 1.1 W power consumption. The receiver sensitivity at a 10−11 bit error rate was −33.0 dBm with 23 dB optical dynamic range. The output signal amplitude obtained was 0.8 V.
Monolithic multigigabit/s silicon decision circuit for applications in fibre-optic communication systems
- Author(s): D. Clawin and U. Langmann
- Source: Electronics Letters, Volume 20, Issue 11, p. 471 –472
- DOI: 10.1049/el:19840329
- Type: Article
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A novel monolithic multigigabit/s Si integrated decision circuit for applications in fibre-optic systems is proposed. Circuit simulations are reported which demonstrate the performance at 2.24 Gbit/s if a fast Si bipolar technology with 2.5 μm design rules and pn-junction isolation is chosen.
Transient chirping in single-frequency lasers: lightwave systems consequences
- Author(s): R.A. Linke
- Source: Electronics Letters, Volume 20, Issue 11, p. 472 –474
- DOI: 10.1049/el:19840330
- Type: Article
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The effect of modulation-induced laser wavelength shifts on optical transmission through dispersive fibres is shown to be a serious limiting factor at bit rates greater than 1 Gbit/s. Wavelength excursions with magnitudes as large as 6 Å are seen to occur in single-frequency lasers (C3 and DFB) during a transition from one power level to another. The wavelength shifts briefly toward shorter wavelengths and then back to the equilibrium value during turn-on and toward longer wavelengths and back during turn-off. These excursions, which are well explained by a model in which the carrier density is temporarily driven out of equilibrium by a change in injection current, last for hundreds of picoseconds or about one half of the relaxation resonance period. This time-dependent behaviour gives rise to a dramatic degradation of system performance with increasing bit rate.
New complete processing system for recognition and classification of objects in multiple image frames
- Author(s): V. Cappellini ; A. del Bimbo ; A. Mecocci
- Source: Electronics Letters, Volume 20, Issue 11, p. 474 –475
- DOI: 10.1049/el:19840331
- Type: Article
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A complete and efficient set of procedures is proposed to solve problems related to object detection and classification in the processing of a sequence of image frames. Nonlinear smoothing, adaptive thresholding and classification by inertial invariants are proposed.
Magnetostatic band suppression at microwave frequency in triple-layered garnet films
- Author(s): P. de Gasperis ; G. Miccoli ; C. di Gregorio ; R. Roveda
- Source: Electronics Letters, Volume 20, Issue 11, p. 475 –476
- DOI: 10.1049/el:19840332
- Type: Article
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The letter describes how the magnetostatic spectrum typical of an yttrium iron garnet film at microwave frequency can be partially suppressed or attenuated by means of absorbing layers still having the garnet structure. In particular, a triple-layered film is exploited in the parallel field configuration to eliminate all magnetostatic modes except the main one.
Low-noise 140–170 GHz heterodyne receiver using quasiparticle tunnel junctions
- Author(s): R. Blundell ; J. Ibruegger ; K.H. Gundlach ; E.J. Blum
- Source: Electronics Letters, Volume 20, Issue 11, p. 476 –478
- DOI: 10.1049/el:19840333
- Type: Article
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Laboratory tests have been made using single quasiparticle tunnel junctions as the nonlinear element for mixing in a heterodyne receiver. Double-sideband receiver noise temperatures of l00±10 K are typical at local oscillator frequencies of 140 to 155 GHz, and mixer conversion losses of less than 3.5 dB are obtained in this frequency range.
Pattern synthesis by use of an augmented Lagrangian algorithm
- Author(s): K. Nakaoka
- Source: Electronics Letters, Volume 20, Issue 11, p. 478 –479
- DOI: 10.1049/el:19840334
- Type: Article
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The augmented Lagrangian algorithm is applied to the optimisation of an array antenna. As examples, the optimal directivities of a broadside array with constraints on sidelobe and excitation amplitudes are computed. The following technique is feasible for use in wide application on pattern synthesis.
High-performance GaAs-GaAlAs phase modulators for PSK optical fibre systems
- Author(s): A.J.N. Houghton ; P.M. Rodgers ; D.A. Andrews
- Source: Electronics Letters, Volume 20, Issue 11, p. 479 –481
- DOI: 10.1049/el:19840335
- Type: Article
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GaAs-GaAlAs monomode phase modulators have been made from MBE-grown heterostructures using reproducible fabrication techniques. A π phase shift at 9 V was obtained for a device length of 4.2 mm. With an internal optical loss <2.5 dB and modulation capability to >1.2 Gbit s−1, these devices show superior overall performance to any previously reported semiconductor guided-wave devices.
Proof and extension of general sensitivity formulas for lossless two-ports
- Author(s): J.W. Bandler ; S.H. Chen ; S. Daijavad
- Source: Electronics Letters, Volume 20, Issue 11, p. 481 –482
- DOI: 10.1049/el:19840336
- Type: Article
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An elegant and simple proof of an important result in sensitivity analysis of lossless two-ports stated by Orchard, Temes and Cataltepe is presented using Tellegen's theorem. Our derivation is extended to the computation of group delay.
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