Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 19, Issue 5, 3 March 1983
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Volume 19, Issue 5
3 March 1983
Algorithm for solving a class of phase-lock-loop equations
- Author(s): P. Hasan
- Source: Electronics Letters, Volume 19, Issue 5, p. 153 –154
- DOI: 10.1049/el:19830107
- Type: Article
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p.
153
–154
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An algorithm for solving the nonlinear Volterra equation of an nth-order phase-lock loop having all poles simple is presented. The proposed formulas are quite general with respect to the phase-detector nonlinearity and require little computational effort.
Analysis of radiative and nonradiative recombination law in lightly doped InGaAsP lasers
- Author(s): G.H.B. Thompson
- Source: Electronics Letters, Volume 19, Issue 5, p. 154 –155
- DOI: 10.1049/el:19830108
- Type: Article
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p.
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–155
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A re-analysis of the recombination data of Su et al. on lightly doped InGaAsP lasers indicates that their figure for the Auger coefficient is uncertain and up to three times too low, does not support their claim of saturation in the radiative recombination, but confirms the presence of a second nonradiative mechanism more sensitively dependent on carrier concentration than the cube.
High-performance modulation-doped GaAs integrated circuits with planar structures
- Author(s): C.P. Lee and W.I. Wang
- Source: Electronics Letters, Volume 19, Issue 5, p. 155 –157
- DOI: 10.1049/el:19830109
- Type: Article
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–157
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A planar process of using proton isolation for modulationdoped GaAs/GaAlAs integrated circuits is presented. Devices with very low contact resistance (∼ 5 × 10−7 Ω cm2) and very high transconductance (∼ 210 ms/mm) have been achieved. DCFL ring oscillators with 10 μm switching FETs have been operated at τ = 36.6 ps at room temperature and 27.3 ps at 77 K. The lowest speed-power product is 2.43 fJ per gate.
Semi-lossy two-port and a theorem concerning RLCn networks
- Author(s): L.R.G. Versfeld
- Source: Electronics Letters, Volume 19, Issue 5, p. 157 –159
- DOI: 10.1049/el:19830110
- Type: Article
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157
–159
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By ‘semi-lossy two-port’ is meant a passive two-port being dissipation-free for some particular form of excitation. Some properties of these two-ports are derived using the impedance matrix. The meaning of these results for the scattering formalism is given. Furthermore a theorem is derived concerning networks built up of passive (ideal) transformers, inductors, capacitors and resistors.
Simultaneous scanning optical and acoustic microscopy
- Author(s): F. Faridian and H.K. Wickramasinghe
- Source: Electronics Letters, Volume 19, Issue 5, p. 159 –160
- DOI: 10.1049/el:19830111
- Type: Article
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p.
159
–160
(2)
We have demonstrated a combined scanning acoustic and optical microscope capable of simultaneously recording acoustic and optical images of the same field of view. The estimated resolution of the optical (6328 Å) and acoustic (550 MHz) images is 2 μm, in good agreement with theory. The system is ideally suited to photoacoustic microscopy.
Dependence of electron mobility on spacer thickness and electron density in modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions
- Author(s): K.H. Hsieh ; H. Ohno ; G. Wicks ; L.F. Eastman
- Source: Electronics Letters, Volume 19, Issue 5, p. 160 –162
- DOI: 10.1049/el:19830112
- Type: Article
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160
–162
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Modulation-doped Ga0.47In0.53As/Al0.48In0.52As heterojunctions were grown by molecular beam epitaxy. Electron mobilities were measured at room temperature and 77 K as a function of undoped Al0.48In0.52As spacer layer thickness and sheet carrier concentration. Enhanced mobilities were as high as 10 900 cm2V−1s−1 at room temperature and 55 500 cm2V−1s−1 at 77 K in these samples with sheet carrier concentrations at 1 33 × 1012 cm−2 (room temperature) and 1.26 × 1012 cm−12 (77 K).
GaAs integrated digital-to-analogue convertor for control of power dual-gate FETs
- Author(s): P. Saunier ; B. Kim ; W.R. Frensley
- Source: Electronics Letters, Volume 19, Issue 5, p. 162 –163
- DOI: 10.1049/el:19830113
- Type: Article
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162
–163
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We are reporting the design, fabrication and performance of a TTL compatible 4-bit GaAs integrated digital-to-analogue convertor with an output voltage between −2.8 V and +2.8 V. This circuit has been especially designed to control the gain of power dual-gate FETs by applying a voltage on the capacitively terminated second gate.
0.66 μm room-temperature operation of InGaAlP DH laser diodes grown by MBE
- Author(s): Y. Kawamura ; H. Asahi ; H. Nagai ; T. Ikegami
- Source: Electronics Letters, Volume 19, Issue 5, p. 163 –165
- DOI: 10.1049/el:19830114
- Type: Article
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–165
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Room-temperature pulsed operation of In0.49Ga0.31Al0.20P/In0.49Ga0.48Al0.03P/In0.49Ga0.31Al0.20P double heterostructure (DH) laser diodes has been achieved for the first time. The DH layers were grown by molecular beam epitaxy. The lasing wavelength was 0.66 μm and the threshold current density was 3.2−3.6 × 104 A/cm2 at room temperature.
Rayleigh scattering in fluoride glass optical fibres
- Author(s): D.C. Tran ; K.H. Levin ; C.F. Fisher ; M.J. Burk ; G.H. Sigel
- Source: Electronics Letters, Volume 19, Issue 5, p. 165 –166
- DOI: 10.1049/el:19830115
- Type: Article
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165
–166
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The present study has verified for the first time the explicit λ−4 Rayleigh behaviour of light scattering in fluoride glass optical fibres and has projected an ultra-low Rayleigh scattering loss of at least 0.012 dB/km at 4 μm.
Polarisation-dependent gain-current relationship in GaAs-AlGaAs MQW laser diodes
- Author(s): H. Kobayashi ; H. Iwamura ; T. Saku ; K. Otsuka
- Source: Electronics Letters, Volume 19, Issue 5, p. 166 –168
- DOI: 10.1049/el:19830116
- Type: Article
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166
–168
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The polarisation-dependent gain spectra were measured for multi-quantum-well laser diodes. Differences in the gain-current relationship and in the peak gain wavelength between TE and TM polarisations are explained by a newly developed model.
New phase-shifting technique for group-type unidirectional transducers used in surface-acoustic-wave filters
- Author(s): K. Yamanouchi ; J.K. Gautam ; T. Meguro
- Source: Electronics Letters, Volume 19, Issue 5, p. 168 –169
- DOI: 10.1049/el:19830117
- Type: Article
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p.
168
–169
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The letter reports a novel method of phase shifting useful in the group type of unidirectional transducers used for the design of low-loss SAW filters. This technique utilises the thin-film capacitance present between the newly described configuration of the feed-electrode layers as an essential element of the required phase shifter. The stray capacitance existing between the feed electrodes is used to advantage. The theoretical and experimental results of one of the filters fabricated are presented.
Phase-locked (GaAl)As laser diode emitting 2.6 W CW from a single mirror
- Author(s): D.R. Scifres ; C. Lindström ; R.D. Burnham ; W. Streifer ; T.L. Paoli
- Source: Electronics Letters, Volume 19, Issue 5, p. 169 –171
- DOI: 10.1049/el:19830118
- Type: Article
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169
–171
(3)
A phase-locked multiple-quantum-well (GaAl)As injection laser with a highly reflective rear facet coating and a low reflective front facet coating is reported to emit 2.6 W CW at room temperature from the front facet.
New flowgraph mode and calibration procedure for S-parameter measurements of devices mounted in microstrip fixture
- Author(s): Shen-You Wang and Shou-Lion Zouh
- Source: Electronics Letters, Volume 19, Issue 5, p. 171 –173
- DOI: 10.1049/el:19830119
- Type: Article
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p.
171
–173
(3)
The letter reports microstrip devices under test (DUT), and gives a new flowgraph mode and calibration procedure for determining error terms. Explicit formulas are given for error terms and S-parameters of the DUT.
Finite cladding effects in W-fibres: a new interpretation of leakage losses
- Author(s): P.L. Francois and C. Vassallo
- Source: Electronics Letters, Volume 19, Issue 5, p. 173 –174
- DOI: 10.1049/el:19830120
- Type: Article
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p.
173
–174
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According to both experiments and calculations, the HE11 mode in depressed inner-cladding single-mode fibres should not be described beyond cutoff with the leaky mode formalism but with a formalism of coupling between a core mode and discrete, lossy cladding modes.
Statistical identification of difference equation representations for nonlinear systems
- Author(s): M. Korenberg
- Source: Electronics Letters, Volume 19, Issue 5, p. 175 –176
- DOI: 10.1049/el:19830121
- Type: Article
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p.
175
–176
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A method is proposed for identifying a difference equation representation for a nonlinear system, by identifying a series of simpler difference equations. The method yields the difference equation representation which is optimal in the least-square sense, and applies to a wide variety of different inputs.
Cancellation performance degradation of a fully adaptive Yagi array due to inner-element coupling
- Author(s): Y. Leviatan ; A.T. Adams ; P.H. Stockmann ; D.R. Miedaner
- Source: Electronics Letters, Volume 19, Issue 5, p. 176 –177
- DOI: 10.1049/el:19830122
- Type: Article
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176
–177
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The effect of inner-element coupling on the cancellation performance of a fully adaptive Yagi array is considered. Graphs of the output residue power as functions of interference-to-noise ratio and bandwidth with and without the inner-coupling effect are presented. It is seen that mutual coupling, like any other frequency-dependent error source, poses a severe limitation to the ability of the array to counteract sidelobe interference.
Measurement of screened voltages by electron-beam-induced conductivity (EBIC)
- Author(s): H.K. Schink
- Source: Electronics Letters, Volume 19, Issue 5, p. 177 –178
- DOI: 10.1049/el:19830123
- Type: Article
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p.
177
–178
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A new method is introduced to measure screened voltages by EBIC. Some applications are shown.
Mutual coupling between short-circuited microstrip antennas
- Author(s): E. Penard and J.-P. Daniel
- Source: Electronics Letters, Volume 19, Issue 5, p. 178 –180
- DOI: 10.1049/el:19830124
- Type: Article
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p.
178
–180
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A method has been previously developed for the computations of mutual coupling between the usual rectangular printed antennas. In the letter the short-circuited antennas with three magnetic walls and an electric wall (Fig. 2) are investigated. Using the cavity model with hybrid boundary conditions (magnetic wall and electric wall) and the equivalence theorem, the problem is reduced to the interactions of two U-shaped magnetic currents. Theory and experiment are in very good agreement.
Dynamic behaviour of a GaAs-AlGaAs MQW laser diode
- Author(s): H. Iwamura ; T. Saku ; T. Ishibashi ; K. Otsuka ; Y. Horikoshi
- Source: Electronics Letters, Volume 19, Issue 5, p. 180 –181
- DOI: 10.1049/el:19830125
- Type: Article
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p.
180
–181
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A comparative study is given on the dynamic properties existing between a GaAs-AlGaAs multi-quantum-well (MQW) laser diode fabricated from an MBE-grown wafer and a conventional double-heterostructure laser diode. Spectral broadening and wavelength shift associated with deep injection current modulation were found to be much smaller in MQW laser diodes than in conventional DH laser diodes.
Bulk unipolar diodes in MBE GaAs
- Author(s): J.M. Woodcock and J.J. Harris
- Source: Electronics Letters, Volume 19, Issue 5, p. 181 –183
- DOI: 10.1049/el:19830126
- Type: Article
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p.
181
–183
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Bulk unipolar (camel) diodes in GaAs have been made using thin, buried p+ layers doped with beryllium and grown by MBE. Barrier heights in the range 0.55 eV to 0.94 eV have been obtained by varying the p+-layer thickness. In all cases the ideality factors of the diodes were less than 1.5.
Stability equation method to reduce the order of fast oscillating systems
- Author(s): C.P. Therapos
- Source: Electronics Letters, Volume 19, Issue 5, p. 183 –184
- DOI: 10.1049/el:19830127
- Type: Article
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p.
183
–184
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A method for linear order reduction is proposed which, for fast oscillating systems, is superior to a number of other techniques (stability equation method, classic Padé technique etc.). For low-frequency systems the proposed method and the stability equation method yield identical results.
New single-mode single-polarisation optical fibre
- Author(s): A.W. Snyder and F. Rühl
- Source: Electronics Letters, Volume 19, Issue 5, p. 185 –186
- DOI: 10.1049/el:19830128
- Type: Article
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p.
185
–186
(2)
The theory for understanding fibres composed of ‘highly’ birefringent material is presented. One of the two possible polarisation states of the fundamental mode can be made leaky, suggesting a novel single-mode single-polarisation fibre design. No leakage occurs in planar waveguides constructed similarly from the identical material.
S-domain realisation of sea spectrum
- Author(s): C.K. Li and J.R. Leigh
- Source: Electronics Letters, Volume 19, Issue 5, p. 186 –187
- DOI: 10.1049/el:19830129
- Type: Article
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p.
186
–187
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A convenient filter is put forward for generating sea disturbances as specified by the Pierson-Moskowitz spectrum. The coefficients for the filter are tabulated as a function of Beaufort number. Information is given on the filter dynamics.
Depolarised broadband source
- Author(s): R.P. Moeller and W.K. Burns
- Source: Electronics Letters, Volume 19, Issue 5, p. 187 –188
- DOI: 10.1049/el:19830130
- Type: Article
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p.
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A depolarised broadband source is demonstrated by depolarising the output of a superluminescent diode with a short length of Hitachi single polarisation fibre. A degree of polarisation of less than 10−3 is achieved.
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