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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 19, Issue 4, 17 February 1983

Volumes & issues:

Volume 19, Issue 4

17 February 1983

Optical-fibre unit for optical submarine cable
  • Author(s): H. Yamamoto ; Y. Namihira ; Y. Niiro
  • Source: Electronics Letters, Volume 19, Issue 4, p. 125 –126
  • DOI:  10.1049/el:19830088
  • Type: Article
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  • p. 125 –126 (2)
    An optical-fibre unit with a strain-relaxing effect is proposed for realising a highly reliable optical-fibre submarine cable. The basic design of the new type of optical-fibre unit means that optical fibres are not subjected to the same strain as the fibre unit directly when the unit is elongated. The test result of the strain-relaxing effect of an experimental optical-fibre unit was about 0.2%, and optical fibres returned to the original position in the fibre unit after the tension was released.
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Application of modified Ebers-Moll model to nonlinear distortion analysis of transistor amplifiers
Molecular beam epitaxial double heterojunction bipolar transistors with high current gains
  • Author(s): S.L. Su ; W.G. Lyons ; O. Tejayadi ; R. Fischer ; W. Kopp ; H. Morkoç ; W. McLevige ; H.T. Yuan
  • Source: Electronics Letters, Volume 19, Issue 4, p. 128 –129
  • DOI:  10.1049/el:19830090
  • Type: Article
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  • p. 128 –129 (2)
    Double heterojunction Al0.35Ga0.65As/GaAs bipolar junction transistors (DHBJTs) grown by molecular beam epitaxy (MBE) were fabricated and tested. Devices with 2000 Å and 500 Å base widths exhibited common emitter current gains of about 325 and 500, respectively, in a wide range of base and collector currents. The use of such high Al mole fraction and double heterojunctions placed stringent requirements on the growth parameter which had to be optimised and controlled very precisely to obtain such high current gains. These current gains compare with the previous best value of 120 obtained in a molecular beam epitaxial single heterojunction bipolar transistor having a 500 Å-thick base region.
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Long-term precipitation rate statistics for north-east of Spain
  • Author(s): M. Puigcerver ; S. Alonso ; J. Lorente ; E. Vilar
  • Source: Electronics Letters, Volume 19, Issue 4, p. 129 –130
  • DOI:  10.1049/el:19830091
  • Type: Article
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  • p. 129 –130 (2)
    Precipitation rates recorded in Barcelona, Spain, over a 20 year period have been processed, and the average annual cumulative distribution is presented. This distribution reflects the meteorological conditions for the North-East of Spain and agrees well with statistics obtained for certain parts of the North of Italy and Greece. The average worst-month distribution is also presented and is related to the annual statistics.
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Inverse scattering solutions of scalar Helmholtz wave equation by a multiple source moment method
  • Author(s): S.A. Johnson ; Yoon Tae-Hoon ; Ra Jung-Woong
  • Source: Electronics Letters, Volume 19, Issue 4, p. 130 –132
  • DOI:  10.1049/el:19830092
  • Type: Article
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  • p. 130 –132 (3)
    Determining the spatial scattering function, i.e. solving the inverse scattering problem, with the Helmholtz wave equation model is known to be an ill posed problem for a single incident radiation field. We show that the problem becomes well posed if formulated as seeking the common scattering function which produces a best prediction of the given scattering data for sufficiently many sources and receivers. The scattering function is found by solution of a system of non-linear algebraic equations which are derived by the method of moments. Our method avoids perturbation theory approximations.
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Enhanced bandgap resonant nonlinear susceptibility in quantum-well heterostructures
Liquid-core optical fibre for voltage measurement using Kerr effect
Modes of propagation in slot line with layered substrate containing magnetised ferrite
Theory of FM noise of single-mode injection lasers
  • Author(s): R. Schimpe  and  W. Harth
  • Source: Electronics Letters, Volume 19, Issue 4, p. 136 –137
  • DOI:  10.1049/el:19830096
  • Type: Article
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  • p. 136 –137 (2)
    The FM noise of single-mode injection lasers is studied in terms of the root-mean-square frequency deviation Δfrms against the angular modulation frequency ωm off-carrier. Spontaneous emission causes phase fluctuations of the laser wave. Enhanced FM noise may occur due to radiation-induced fluctuations of the carrier density. The influence of the coupling between laser field and active region on this modulation noise is investigated.
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A priori bound for optimal stochastic control problem with multiplicative noise
Carrier lifetimes in silicon epitaxial layers deposited on oxygen-implanted substrates
  • Author(s): K. Das ; G.P. Shorthouse ; J.B. Butcher
  • Source: Electronics Letters, Volume 19, Issue 4, p. 139 –140
  • DOI:  10.1049/el:19830098
  • Type: Article
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  • p. 139 –140 (2)
    Carrier lifetimes in silicon epitaxial layers deposited on high-dose oxygen-implanted wafers have been obtained from measurements of diode storage times. A figure of 1.25 μS was obtained for diodes in the implanted area, compared with 1.75 μS for diodes outside the implanted area on the same wafer. This marginal degradation of lifetime indicates that the dielectrically isolated structure should be able to support bipolar and dynamic logic devices.
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Analysis of quasicyclic ferrite junction by point-matching technique
  • Author(s): J. Mazur
  • Source: Electronics Letters, Volume 19, Issue 4, p. 140 –142
  • DOI:  10.1049/el:19830099
  • Type: Article
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  • p. 140 –142 (3)
    In the letter a field-theory treatment of a new type of nonreciprocal ferrite device, the quasicyclic ferrite junction (QF), is presented. The QF junction utilises properties of the three-port EG-mode circulator in which one edge is short-circuited to the ground plane. The main feature of the junction is mutual isolation between two ports joined by the short-circuited edge. The boundary problem is solved by means of the point-matching technique. Finally, experimental results are carried out to verify the obtained numerical dates.
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Fast photoconductive GaAs detectors made by laser stimulated MOCVD
Enhancement of birefringence in polarisation-maintaining fibres by thermal annealing
  • Author(s): A. Ourmazd ; R.D. Birch ; M.P. Varnham ; D.N. Payne ; E.J. Tarbox
  • Source: Electronics Letters, Volume 19, Issue 4, p. 143 –144
  • DOI:  10.1049/el:19830101
  • Type: Article
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  • p. 143 –144 (2)
    The thermal behaviour of highly birefringent polarisation-maintaining optical fibres is studied, and the thermal hysteresis of the birefringence is related to the quenching of the fibre. Suitable ‘on-line’ thermal annealing during fibre drawing is shown to be a method for the full development of the high anisotropic stresses potentially available in high birefringence structures using borosilicate stress-producing parts.
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PSK homodyne receiver sensitivity measurements at 1.5 μm
CAD broadband matching design
High-speed GaAlAs-GaAs heterojunction bipolar transistors with near-ballistic operation
Switched-capacitor second-order noise-shaping coder
  • Author(s): G. Lainey ; R. Saintlaurens ; P. Senn
  • Source: Electronics Letters, Volume 19, Issue 4, p. 149 –150
  • DOI:  10.1049/el:19830105
  • Type: Article
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  • p. 149 –150 (2)
    The rapid development of digital processing in the fields of instrumentation, control and communications has generated a good deal of research into simple, easily integrable, high-resolution A/D converters. Given the significant promise such converters offer for future application, a switched-capacitor version of a second-order noise-shaping coder intended for high-resolution conversion has been realised. This coder has been used successfully to produce a PCM signal.
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Erratum: Deformation-free overgrowth of InGaAsP DFB corrugations

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