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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 19, Issue 23, 10 November 1983

Volumes & issues:

Volume 19, Issue 23

10 November 1983

Distance measure for simplified receivers
Triggering pulse durations in transferred electron devices
Gaussian pulse propagation in nonlinear optical fibre
Effects of wire radius and arm bend on a rectangular spiral antenna
  • Author(s): H. Nakano ; J. Yamauchi ; K. Nogami
  • Source: Electronics Letters, Volume 19, Issue 23, p. 957 –958
  • DOI:  10.1049/el:19830651
  • Type: Article
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  • p. 957 –958 (2)
    The input impedance of a rectangular spiral antenna is calculated as a function of wire radius. A value close to 60π Ω is obtained when neighbouring filaments are spaced by nearly the equivalent strip width, although the spiral is not exactly self complementary. When the spiral arm is suitably bent the circularly polarised radiation pattern is widened in one principal plane, while maintaining the inherent input impedance and power gain.
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Measuring method of equivalent series capacitance and negative resistance of crystal-oscillator circuits
Relationships for the drift and diffusion components of the drain current in an MOS transistor
Use of a sputtered SiO2 coating for surface protection during ‘leaky tube’ diffusion of Zn into GaAs
500 Mbit/s transmission experiment using 1.3 μm wavelength InGaAsP/InP high-speed surface-emitting DH LEDs
  • Author(s): A. Suzuki ; H. Nomura ; K. Minemura
  • Source: Electronics Letters, Volume 19, Issue 23, p. 963 –965
  • DOI:  10.1049/el:19830655
  • Type: Article
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  • p. 963 –965 (3)
    A 1.3 μm-wavelength high-speed surface-emitting DH LED, with 0.6 ns rise time and 1.3 ns fall time, has been developed by optimal design of both the LED parameters and driving circuit. A 500 Mbit/s RZ pseudorandom pulse transmission experiment using the high-speed DH LED has been performed with a 5.7 dB level margin over a 2.7 km optical fibre. The 500 Mbit/s LED system feasibility has been confirmed.
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High-strength silica fibres in a long length coated at a speed of 5 m/s
  • Author(s): U.C. Paek  and  C.M. Schroeder
  • Source: Electronics Letters, Volume 19, Issue 23, p. 965 –966
  • DOI:  10.1049/el:19830656
  • Type: Article
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  • p. 965 –966 (2)
    We report the strength characteristics of high-speed coated optical fibres. We used synthetic drawn 125 μm-diameter-fibre silica rods coated in-line with a 50 μm-thick single-layer coating at a rate of 5 m/s. A 50.8 km length of fibre was drawn into sample lengths ranging from ∼ 5 to 7 km from each rod. All the fibres were proof tested at three different stress levels up to 2.1 GN/m2, resulting in an average survival length of ∼ 10 and 3 km, respectively, at 1 4 GN/m2 (200 kpsi) and 2.1 GN/m2 (300 kpsi).
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New multilayered slot-line structures with high nonreciprocity
Integrated MOS offset error canceller for analogue adaptive transversal filter
Parasitics-compensated building blocks for switched-capacitor filters
Broadband terminations for magnetostatic surface waves
  • Author(s): J. Krug  and  P. Edenhofer
  • Source: Electronics Letters, Volume 19, Issue 23, p. 971 –972
  • DOI:  10.1049/el:19830660
  • Type: Article
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  • p. 971 –972 (2)
    The properties of magnetostatic surface wave (MSSW) devices are disturbed by the finite length of the YIG film. Such disturbances, causing interference phenomena of MSSW reflected from both film ends, can be measured in the time domain by multiple reflections or in the frequency domain by a passband ripple. These reflections can be eliminated by adequately loading the film ends with semiconductive samples.
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Effect of nuclear radiation on Selfoc microlenses
  • Author(s): E.J. Friebele
  • Source: Electronics Letters, Volume 19, Issue 23, p. 972 –974
  • DOI:  10.1049/el:19830661
  • Type: Article
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  • p. 972 –974 (3)
    Exposure of quarter pitch SLS and SLW Selfoc microlenses to moderate radiation doses ∼50 Gy has been found to induce optical attenuations of as much as 1 dB at 0.85 μm. Although significant recovery is noted in the SLW lens over 24 h following the irradiation, little decrease has been measured in the SLS lens. Spectral measurements of the induced absorption have revealed a monotonic decrease with increasing wavelength (0.6–1.6 μm).
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Effect of auger recombination on the threshold characteristics of gain-guided InGaAsP lasers
  • Author(s): G.P. Agrawal  and  N.K. Dutta
  • Source: Electronics Letters, Volume 19, Issue 23, p. 974 –976
  • DOI:  10.1049/el:19830662
  • Type: Article
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  • p. 974 –976 (3)
    Experimental and theoretical results are presented to study the effect of Auger recombination on the threshold current of gain-guided InGaAsP lasers. A comparison of theory and experiment suggests that Auger recombination should be included for a reasonable agreement between them. It is shown that a rapid increase of the threshold current for narrow stripes is due to the combined effect of index anti-guiding and Auger recombination. Our deduced values of the Auger coefficient at 1.3 and 1.55 μm indicate that it increases rapidly with decreasing bandgap.
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Screening of long-wavelength laser at high temperature and high current levels
CMOS logic circuit optimum design for radiation tolerance
The case for using a matched load standard for six-port calibration
Simple fibre-optic sensor for detecting water penetration into optical fibre cables
Self resonant IDT as a grating reflector of surface acoustic waves
  • Author(s): J.P. Agrawal ; P. Sudhakar ; A.B. Bhattacharyya
  • Source: Electronics Letters, Volume 19, Issue 23, p. 982 –983
  • DOI:  10.1049/el:19830667
  • Type: Article
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  • p. 982 –983 (2)
    An IDT, when resonantly loaded by a pure inductance, behaves as a perfect reflector of SAWs. It is shown that this ideal condition can be approached by using the self resonance of an IDT. The reflection coefficient of the self resonant IDT is calculated to be about 0.96 and is observed to be in the range 0.93 to 0.95. It is demonstrated that the frequency of self resonance at which the reflection peak and hence the transmission null occurs can be shifted by an external capacitor connected across the self resonant reflector IDT.
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High-speed GaAs SCFL monolithic integrated decision circuit for Gbit/s optical repeaters
  • Author(s): N. Ohta  and  T. Takada
  • Source: Electronics Letters, Volume 19, Issue 23, p. 983 –985
  • DOI:  10.1049/el:19830668
  • Type: Article
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  • p. 983 –985 (3)
    A high-speed GaAs monolithic integrated decision circuit for Gbit/s optical repeaters, based on source coupled FET logic (SCFL) and designed to be completely ECL-compatible, has been developed. A clock phase margin of 150 degrees at 2 Gbit/s and IC yields of about 60% are achieved by using SCFL configuration. The developed IC operates stably from 10 to 60°C ambient temperature over a supply voltage fluctuation of more than 2 V.
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Growth of large areas of grain boundary-free silicon-on-insulator
  • Author(s): J.P. Colinge ; D. Bensahel ; M. Alamome ; M. Haond ; J.C. Pfister
  • Source: Electronics Letters, Volume 19, Issue 23, p. 985 –986
  • DOI:  10.1049/el:19830669
  • Type: Article
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  • p. 985 –986 (2)
    A technique combining a raster laser scan, selective annealing using patterned antireflection stripes and a seeding window has been successfully used to grow large single crystals of silicon-on-insulator. The raster-scanned laser spot simulates an advancing linear heat source and the anti-reflection stripes modulate the trailing edge in such a way that parasitic random nucleation is avoided. The seeding gives the film its crystal orientation.
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Enhancement-mode metal/(Al,Ga)As/GaAs buried-interface field-effect transistor (BIFET)
  • Author(s): T.J. Drummond ; W. Kopp ; D. Arnold ; R. Fischer ; H. Morkoç ; L.P. Erickson ; P.W. Palmberg
  • Source: Electronics Letters, Volume 19, Issue 23, p. 986 –988
  • DOI:  10.1049/el:19830670
  • Type: Article
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  • p. 986 –988 (3)
    Undoped Al0.5Ga0.5As is used as an insulator layer in the fabrication of MIS-type buried-interface field-effect transistors (BIFETs). The devices had a 2.5 μm-long gate and an insulator layer 1000 Å thick. When operated in an accumulation mode the transconductance and maximum current increased from 21 mS/mm and 77 mA/mm at 300 K to 40 mS/mm and 138 mA/mm at 77 K, respectively. The maximum possible 77 K transconductance is calculated as approximately 130 mS/mm. These preliminary experimental results are the best yet reported for a GaAs MIS-type device and represent the first report of enhanced device performance at cryogenic temperatures as a result of an increased electron saturation velocity.
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Structure of GaAs-Ga1−xAlxAs superlattices grown by metal-organic chemical vapour deposition
  • Author(s): R.J.M. Griffiths ; N.G. Chew ; A.G. Cullis ; G.C. Joyce
  • Source: Electronics Letters, Volume 19, Issue 23, p. 988 –990
  • DOI:  10.1049/el:19830671
  • Type: Article
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  • p. 988 –990 (3)
    A computer-controlled metal-organic chemical vapour deposition system employing a fast-switching gas manifold has been used to prepare GaAs-Ga1−xAlxAs superlattice structures. A combination of cross-sectional transmission electron microscopy and Auger and secondary ion mass spectrometry sputter profiling have allowed accurate measurements to be made of layer thickness and GaAs-Ga1−xAlxAs interface widths. Layers as thin as 15 Å have been observed and interface widths less than 20 Å measured.
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Concept of multiport-coupling beam-switching network and its basic performance in K-band
Efficient algorithm for reduction by continued-fraction expansion about s = 0 and s = a
Effects of grain boundary passivation on the characteristics of p-channel MOSFETs in LPCVD polysilicon
  • Author(s): S.D.S. Malhi ; R.R. Shah ; H. Shichijo ; R.F. Pinizzotto ; C.E. Chen ; P.K. Chatterjee ; H.W. Lam
  • Source: Electronics Letters, Volume 19, Issue 23, p. 993 –994
  • DOI:  10.1049/el:19830674
  • Type: Article
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  • p. 993 –994 (2)
    p-channel MOSFETs in LPCVD polysilicon have been built. Grain boundary passivation using a plasma of hydrogen has been explored as a means of improving the device performance. Dramatic enhancement of drive current and curtailment of leakage current have been observed. The devices are well suited for application as load elements in CMOS static RAMs.
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Length dependence of optical fibre bandwidth
Ultimate limit of polarisation holding in single-mode fibres
Direct rotation-rate detection with a fibre-optic gyro by using digital data processing
Performance of DPSK system in impulsive atmospheric radio noise with varying impulse rates and intersymbol interference
Semiconductor laser linewidth broadening due to 1/f carrier noise
Semiconductor light sources with capabilities of electronic beam-scanning
Digital radio outage prediction with space diversity
ESR study on loss increase of 500°C heat-treated Ge-doped optical fibres
  • Author(s): M. Nakahara ; Y. Ohmori ; H. Itoh
  • Source: Electronics Letters, Volume 19, Issue 23, p. 1004 –1006
  • DOI:  10.1049/el:19830682
  • Type: Article
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  • p. 1004 –1006 (3)
    Spectral changes of ESR signals due to germanium associated Ge(3) centres were observed on heat-treated optical fibres and preforms. The defect centres essentially exist in as-drawn fibres, even if preforms have been oxidised prior to drawing. The 500°C heat treatment of Ge-doped fibres caused a remarkable decrease in the ESR intensity of Ge(3) centres, subsequently causing optical loss increase around the 1.39 μm wavelength.
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Loss increase in silicone-coated fibres with heat treatment
  • Author(s): Y. Ohmori ; H. Itoh ; M. Nakahara ; N. Inagaki
  • Source: Electronics Letters, Volume 19, Issue 23, p. 1006 –1008
  • DOI:  10.1049/el:19830683
  • Type: Article
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  • p. 1006 –1008 (3)
    Loss-increase characteristics for four kinds of silicone-coated optical fibres with heat treatment have been investigated OH ion absorption loss increase occurs by heat treatment above 250°C, and becomes marked in heat treatment at 500°C for GeO2-doped silica fibres. The others did not exhibit any loss increase at 1.39 μm due to OH ions. It was found, from the experiments, that the loss-increase characteristics in heat treatment depend strongly on the glass system in the fibre core.
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