Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 19, Issue 19, 15 September 1983
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Volume 19, Issue 19
15 September 1983
High-performance millimetre-wave mixer diodes fabricated using a deep mesa etch approach
- Author(s): J.L. Heaton ; W. Fabian ; F. Spooner ; E.H. Kraemer
- Source: Electronics Letters, Volume 19, Issue 19, p. 749 –750
- DOI: 10.1049/el:19830510
- Type: Article
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Schottky-barrier junction mixer diodes compatible with monolithic integration have been fabricated on semi-insulating GaAs substrates using buried VPE n+ layers and deep mesa etch processing. A 590 GHz cutoff frequency was determined using modified DeLoach analysis and fin-line chip mounting. A 5.3 dB (SSB) noise figure and a 4.8 dB conversion loss were obtained at 35 GHz for a pair of chips in a balanced microstrip mixer.
Single-longitudinal-mode operation of injection laser coupled to a GRINROD external cavity
- Author(s): K.-Y. Liou
- Source: Electronics Letters, Volume 19, Issue 19, p. 750 –751
- DOI: 10.1049/el:19830511
- Type: Article
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We have demonstrated CW and pulsed single-longitudinal-mode operation of a conventional InGaAsP buried-heterostructure laser butt-coupled to a short GRINROD lens with reflective coating on the far end. The GRINROD lens was prepared using a ≲1/4 pitch graded-index fibre which was used as an external cavity with controlled optical coupling to the laser.
High-gain optical amplification of laser diode signal by Raman scattering in single-mode fibres
- Author(s): E. Desurvire ; M. Papuchon ; J.P. Pocholle ; J. Raffy ; D.B. Ostrowsky
- Source: Electronics Letters, Volume 19, Issue 19, p. 751 –753
- DOI: 10.1049/el:19830512
- Type: Article
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The letter reports, for the first time, a 45 dB amplification gain of a laser diode signal emitting at 1.24 μm, in a single-mode fibre, with low pump power, using the stimulated Raman scattering effect.
High-speed Schottky photodiode on semi-insulating GaAs
- Author(s): Z. Rav-Noy ; C. Harder ; U. Schreter ; S. Margalit ; A. Yariv
- Source: Electronics Letters, Volume 19, Issue 19, p. 753 –754
- DOI: 10.1049/el:19830513
- Type: Article
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A high-speed GaAs photodiode has been fabricated on a GaAs semi-insulating substrate. The photodiode has an active area of 8 μm × 15 μm and a bandwidth in excess of 9 GHz. This Schottky photodiodes is suitable for monolithic integration with other optoelectronic components.
High-peak-power asymmetric double-heterostructure (GaAl)As-GaAs injection laser
- Author(s): I. Samid ; M. Benedek ; U. Mirsky ; M. Yust
- Source: Electronics Letters, Volume 19, Issue 19, p. 754 –755
- DOI: 10.1049/el:19830514
- Type: Article
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An asymmetric double-heterostructure pulsed-power laser is described. This laser exhibits low-temperature sensitivity of optical power in the operating temperature range of −40 to +90°C. The threshold current is below 10 A at 90°C. The power loss at 40 A and 90°C operation is at least a factor of two less severe for this structure compared to that of the single heterostructure.
Step response of lossless parabolic transmission line
- Author(s): H. Curtins ; J.J. Max ; A.V. Shah
- Source: Electronics Letters, Volume 19, Issue 19, p. 755 –756
- DOI: 10.1049/el:19830515
- Type: Article
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The response of a parabolically tapered transmission line to an ideal voltage step is derived. The resulting expressions are simple exponential functions and thus enable a fast characterisation of the transient behaviour of such lines when used as pulse transformers or matching sections.
High-speed pulse-train generation using single-mode-fibre recirculating delay lines
- Author(s): S.A. Newton ; R.S. Howland ; K.P. Jackson ; H.J. Shaw
- Source: Electronics Letters, Volume 19, Issue 19, p. 756 –758
- DOI: 10.1049/el:19830516
- Type: Article
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A simple technique is described, whereby the delay properties of a series of two single-mode-fibre recirculating delay lines were used to generate a sequence of uniform, high-speed pulse trains. A single, short input was used to generate a sequence of 1.25 Gbit/s pulse trains that were uniform to better than ±0.3 dB.
Transient characteristics of latch-up in bulk CMOS
- Author(s): T. Aoki ; R. Kasai ; S. Horiguchi
- Source: Electronics Letters, Volume 19, Issue 19, p. 758 –759
- DOI: 10.1049/el:19830517
- Type: Article
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Transient characteristics of the latch-up turn-on process in bulk CMOS are investigated. A measurement technique that evaluates the threshold trigger pulse current of latch-up and also observes latch-up turn-on transient waveforms is established. Through the comparison between experimental data and precise circuit simulation results, the main factors that determine transient latch-up characteristics are clarified as the base-emitter diffusion capacitors.
GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process
- Author(s): C.S. Hong ; D. Kasemset ; M.E. Kim ; R.A. Milano
- Source: Electronics Letters, Volume 19, Issue 19, p. 759 –760
- DOI: 10.1049/el:19830518
- Type: Article
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The fabrication and characterisation of GaAlAs buried-heterostructure laser diodes having low threshold currents (10 mA), high uniformity and planar surface structure, and grown exclusively by metalorganic chemical vapour deposition (MOCVD) are described. Single-longitudinal and transverse-mode operation of these devices has been observed. In addition, considerable suppression of relaxation resonance effects has been observed in the high-frequency modulation of these devices.
VLSI digital polarity correlator based on an overloading counter technique
- Author(s): W.S. Blackley ; M.A. Jack ; J.R. Jordan
- Source: Electronics Letters, Volume 19, Issue 19, p. 761 –762
- DOI: 10.1049/el:19830519
- Type: Article
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A VLSI structure to implement a digital polarity correlator using an overloading integrating counter technique is reported. The implementation permits direct cascading of individual correlator chips without using additional circuits, to give complete flexibility in choice of correlator delay and resolution. The design considered offers significant performance advantages in high-speed correlation applications.
Infra-red optical loss increase for silica fibre in cable filled with water
- Author(s): N. Uesugi ; Y. Murakami ; C. Tanaka ; Y. Ishida ; Y. Mitsunaga ; Y. Negishi ; N. Uchida
- Source: Electronics Letters, Volume 19, Issue 19, p. 762 –764
- DOI: 10.1049/el:19830520
- Type: Article
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Loss increase characteristics of optical fibre in cable filled with water are reported. Drastic loss increase around 1.24 μm is observed for both graded-index and single-mode fibres. The origin of the loss increase is found to be due to hydrogen gas diffused into the silica glass interstitially.
Cochannel and intersymbol interferences in QAM system
- Author(s): H.T. Huynh and P. Fortier
- Source: Electronics Letters, Volume 19, Issue 19, p. 764 –765
- DOI: 10.1049/el:19830521
- Type: Article
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The method of Ho and Yeh, with some modifications, is employed to analyse the performance of the QAM system in the presence of jammers and band-limiting. Results are presented for a 16-QAM system using the TDMA INTELSAT V communication system specifications.
Material dispersion characteristics of optical fibres prepared by the PCVD process
- Author(s): P. Bachmann ; P. Geittner ; H. Hübner ; D. Leers ; M. Lennartz
- Source: Electronics Letters, Volume 19, Issue 19, p. 765 –767
- DOI: 10.1049/el:19830522
- Type: Article
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Material dispersion data for glasses prepared by the PCVD method are presented and discussed with respect to data obtained by other deposition procedures. The investigations include the material systems pure SiO2 and SiO2 doped with germanium dioxide, germanium dioxide/fluorine and pure fluorine, respectively.
General form for representing the Fourier transform
- Author(s): K.M. Henein and R.A. King
- Source: Electronics Letters, Volume 19, Issue 19, p. 767 –768
- DOI: 10.1049/el:19830523
- Type: Article
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By exploiting the expologarithmic properties of numbers, it is possible to derive a general equation for complex exponential transforms such as the Fourier transform. The frequency interpretation of this general equation suggests some new and interesting problems in system and filter design.
High-precision measurements on a compact antenna test range
- Author(s): P.A. Beeckman
- Source: Electronics Letters, Volume 19, Issue 19, p. 769 –770
- DOI: 10.1049/el:19830524
- Type: Article
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In the letter recent results of antenna measurements on a compact antenna test range (CATR) are compared with those on an outdoor range. Both results are corrected for the influences of the non-plane-wave illumination of the test antenna.
Estimation of truncation and aliasing errors involved in DFT computation
- Author(s): R. Ishii and M. Wakamoto
- Source: Electronics Letters, Volume 19, Issue 19, p. 770 –772
- DOI: 10.1049/el:19830525
- Type: Article
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Expressions are developed for the approximate values of truncation and aliasing errors in the computation of the discrete Fourier transform. Further, the uncertainty principle, relating time and frequency in the Fourier transform, is shown to carry through to these derived expressions of truncation and aliasing errors.
Hardware method of synchronising processes without using a clock
- Author(s): D.M. Taub
- Source: Electronics Letters, Volume 19, Issue 19, p. 772 –773
- DOI: 10.1049/el:19830526
- Type: Article
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A system of asynchronous logic is described whose purpose is to keep operations taking place in several different devices in step with one another. The description includes details of control waveforms on the three bus lines that interconnect the devices, a suggested implementation and a state table showing how it operates.
Power spectrum of sampled signals distorted by jitter
- Author(s): B. Szühbator
- Source: Electronics Letters, Volume 19, Issue 19, p. 773 –775
- DOI: 10.1049/el:19830527
- Type: Article
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A new approach has been used to obtain general expressions for the power spectrum of sampled signals distorted by jitter and noise resulting from jitter. A time-variant delay network is used as a model of jitter sources.
1 Gbit/s transmission experiment over 101 km of single-mode fibre using a 1.55 μm ridge guide C3 laser
- Author(s): R.A. Linke ; B.L. Kasper ; J.-S. Ko ; I.P. Kaminow ; R.S. Vodhanel
- Source: Electronics Letters, Volume 19, Issue 19, p. 775 –776
- DOI: 10.1049/el:19830528
- Type: Article
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Using a cleaved-coupled-cavity (C3) ridge guide laser which oscillates in a single longitudinal mode at 1.55 μm wavelength, we report the first lightwave transmission experiment exploying single-frequency lasers at speeds above 500 Mbit/s. We have achieved digital transmission with a bit-error rate of 2 × 10−10 at 1.0 Gbit/s over 101 km of single-mode fibre. This represents a record for the length of unrepeatered optical transmission for bit rates greater than 500 Mbit/s. Evidence for an error-rate floor, presumably due to residual partition noise, is observed. No such floor was observed in an 84 km—1 Gbit/s experiment using the same C3 laser.
Instantaneous voice period measurement for cochlear stimulation
- Author(s): D.M. Howard and A.J. Fourcin
- Source: Electronics Letters, Volume 19, Issue 19, p. 776 –778
- DOI: 10.1049/el:19830529
- Type: Article
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A peak-picking method for measuring the instantaneous period of voiced speech is described and compared with three other well documented techniques. It has been developed for use with a cochlear prosthesis to provide electrically stimulated hearing in a number of totally deaf adults. In this way both receptive and productive abilities can be substantially improved.
Behaviour of guided modes in systems of parallelly located transmission lines on dielectric substrates
- Author(s): B. Janiczak
- Source: Electronics Letters, Volume 19, Issue 19, p. 778 –779
- DOI: 10.1049/el:19830530
- Type: Article
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The dispersion properties of the sets of parallelly located arbitrarily placed coplanar and planar transmission lines on dielectric substrates are analysed by the spectral-domain technique. The developed formulation covers all practically important waveguides for microwave integrated circuits applications.
Analysis of coupled asymmetric microstrip lines on a ferrite substrate
- Author(s): B. Janiczak and M. Kitliński
- Source: Electronics Letters, Volume 19, Issue 19, p. 779 –781
- DOI: 10.1049/el:19830531
- Type: Article
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The dispersion properties of asymmetric coupled microstrip lines filled with ferrite medium magnetised perpendicularly to the substrate surface are analysed by the spectral-domain technique. The dispersion characteristics of the fundamental C- and π-modes are found as a function of various structural parameters and of biasing magnetic field. New interesting properties of guided modes have been observed.
Fabrication of polarisation-maintaining [3×3] single-mode-fibre couplers
- Author(s): M. Kawachi
- Source: Electronics Letters, Volume 19, Issue 19, p. 781 –782
- DOI: 10.1049/el:19830532
- Type: Article
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[3×3] fused fibre couplers have been fabricated with polarisation-maintaining and absorption-reducing (PANDA) fibres. The couplers can hold linear polarisation along the principal axis of the fibre branches, showing an extinction ratio better than −15 dB.
Pulse compression acoustic microscopy at 750 MHz
- Author(s): M. Nikoonahad ; G.Q. Yue ; E.A. Ash
- Source: Electronics Letters, Volume 19, Issue 19, p. 782 –784
- DOI: 10.1049/el:19830533
- Type: Article
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A pulse compression acoustic microscope working at a centre frequency of 750 MHz is reported. The pulse expansion and compression is achieved by SAW dispersive delay lines. The transmitted chirp has a bandwidth of 150 MHz and a dispersion of 1 MHz/ns. A processing gain in excess of 10 dB has been achieved.
High-speed 1.55 μm single-longitudinal-mode ridge waveguide C3 laser
- Author(s): I.P. Kaminow ; J.-S. Ko ; R.A. Linke ; L.W. Stulz
- Source: Electronics Letters, Volume 19, Issue 19, p. 784 –785
- DOI: 10.1049/el:19830534
- Type: Article
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Fundamental-transverse-mode ridge waveguide laser chips were recleaved to form C3 lasers with a single-longitudinal-mode output stabilised at a fixed wavelength over a wide range of drive currents and temperature. Lasers operated at 1.55 μm at a bit rate of 2 Gbit/s with on-off ratios greater than 10:1 and side-mode suppression greater than 1200:1. A simple method for mapping the stable operating regime is described.
Improved agile notch adaptive equaliser
- Author(s): J.K. Chamberlain and A.J. Price
- Source: Electronics Letters, Volume 19, Issue 19, p. 785 –787
- DOI: 10.1049/el:19830535
- Type: Article
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A major source of ‘outage’ in high-capacity digital radio-relay systems operating in the lower microwave bands is multipath propagation. Adaptive equalisation of the channel and other remedial measures such as the use of space diversity are often necessary for adequate system performance. A common type of adaptive frequency-domain equaliser employs a variable single-pole filter controlled by three fixed spectrum-sampling detectors. The effectiveness of this type is limited by extraneous causes of spectrum distortion such as tilts. The letter describes a new form of equaliser which searches for and equalises according to minima in the distorted spectrum and is insensitive to extraneous spectrum tilts.
Extended calibration aid for six-port network analysers
- Author(s): C.M. Potter and C.M. Snowden
- Source: Electronics Letters, Volume 19, Issue 19, p. 787 –788
- DOI: 10.1049/el:19830536
- Type: Article
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A method of ensuring optimum calibration for a six-port measurement system is described, which minimises errors due to nonideal calibration standards. This technique allows the system to be unambiguously calibrated using software based on single precision arithmetic and is particularly useful in automated systems.
Modifield C-2C ladder voltage divider for application in PCM A/D convertors
- Author(s): S.P. Singh ; A. Prabhakar ; A.B. Bhattacharyya
- Source: Electronics Letters, Volume 19, Issue 19, p. 788 –789
- DOI: 10.1049/el:19830537
- Type: Article
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In the letter a capacitor structure is reported for use in PCM system A/D convertors realised by the charge redistribution technique. The structure uses only 49 elementary capacitors as against more than 192 elementary capacitors reported in earlier work.
Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K
- Author(s): R. Fischer ; T.J. Drummond ; W. Kopp ; H. Morkoç ; K. Lee ; M.S. Shur
- Source: Electronics Letters, Volume 19, Issue 19, p. 789 –791
- DOI: 10.1049/el:19830538
- Type: Article
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The DC characteristics of AlxGa1−xAs/GaAs MODFETs at 77 K have been investigated. At 77 K the MODFETs typically showed a threshold voltage shift of ≃0.2 V with respect to room temperature. In devices with x = 0.24 large drain biases sometimes resulted in a semipersistent distortion of the drain I/V characteristics. Illuminating the devices removed both the distortion and threshold voltage shift. By using a mole fraction of x = 0.33 and optimising the growth temperature the maximum threshold shift could be reduced to about 0.05 V.
New Ga0.47In0.53As sheet-charge field-effect transistor for long-wavelength optoelectronic integration
- Author(s): C.Y. Chen ; K. Alavi ; A.Y. Cho ; P.A. Garbinski ; Y.M. Pang
- Source: Electronics Letters, Volume 19, Issue 19, p. 791 –792
- DOI: 10.1049/el:19830539
- Type: Article
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We demonstrate a Ga0.47In0.53As field-effect transistor with an extremely highly doped (2 × 1018 cm−3 and ultrathin (140 Å) channel layer. A transconductance of 80 mS/mm was measured for a device with a gate length of 2 μm. A photo-conductive detector made from this structure is also reported. This structure may be useful for integrated photo-receiver applications.
8 km-long polarisation-maintaining fibre with highly stable polarisation state
- Author(s): Y. Sasaki ; T. Hosaka ; K. Takada ; J. Noda
- Source: Electronics Letters, Volume 19, Issue 19, p. 792 –794
- DOI: 10.1049/el:19830540
- Type: Article
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A new preform fabrication technique for realising long lengths of polarisation-maintaining optical fibres is described. The technique is shown to produce stress-induced birefringent fibres with symmetry and uniformity along the length in the stress-applying parts. The resultant 8.3 km-long fibre whose relative refractive-index difference is 0.6% has been obtained with a crosstalk of −23 dB at 1.15 μm wavelength, where the loss is 1.7 dB/km.
Optimum control of packet switching networks
- Author(s): J.M. Selga
- Source: Electronics Letters, Volume 19, Issue 19, p. 794 –795
- DOI: 10.1049/el:19830541
- Type: Article
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A new performance measure for packet switching networks, called new power, is presented; it is similar to the existing notion of network power but it is decentralisable and fair. A distributed flow-control method that optimises the new power is given for virtual circuit oriented networks.
Aging characteristic of light-modulation quartz-crystal oscillator with glass-bar-mounted plano-convex AT-cut quartz-crystal plate
- Author(s): S. Yamagata
- Source: Electronics Letters, Volume 19, Issue 19, p. 795 –797
- DOI: 10.1049/el:19830542
- Type: Article
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A glass-bar-mounted plano-convex AT-cut quartz-crystal resonator (GMPA resonator) is employed in the oscillator to work as a three-port network device. In this case, the light beam is modulated with the dynamic stress of the oscillating quartz-crystal plate and the modulated-light beam is used as a feedback loop of the oscillation. The experimental results for the frequency/temperature characteristic of the oscillator system are presented. About 5 × 10−9 aging rate for a week was realised in the present oscillator.
Quasi-two-dimensional analytical solution of Poisson equation in arbitrarily doped short-channel MOSFET
- Author(s): T. Skotnicki
- Source: Electronics Letters, Volume 19, Issue 19, p. 797 –798
- DOI: 10.1049/el:19830543
- Type: Article
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The potential distribution in a short-channel nonuniformly doped MOSFET is strictly two-dimensional and so far has been treated only numerically. In the letter an analytical solution of this problem resulting in an explicit expression for the potential distribution is presented. In order to test its validity this expression was used for threshold voltage calculation for a typical H-MOS transistor and has shown a good agreement with experimental results.
Theory of spontaneous emission in gain-guided laser amplifiers
- Author(s): J. Arnaud
- Source: Electronics Letters, Volume 19, Issue 19, p. 798 –800
- DOI: 10.1049/el:19830544
- Type: Article
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We give an argument suggesting that spontaneous emission in gain-guided laser amplifiers is enhanced by a factor much smaller than the K-factor previously calculated. This is because the fundamental mode content of the spontaneous emission field should be calculated in the sense of the Hermitian rather than direct product at the laser output.
Two-parameter empirical model for rainfall rate distribution
- Author(s): F. Moupfouma
- Source: Electronics Letters, Volume 19, Issue 19, p. 800 –801
- DOI: 10.1049/el:19830545
- Type: Article
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In a previous paper we suggested a three-parameter model providing a good fit for rate distribution. Moreover, this model approximates a log-normal distribution at low rates and a gamma distribution at high rates. In the letter we reduced the number of parameters to two by setting the third one constant. This modified model appears to give good agreement with the experimental data gathered in various locations around the world.
Two-dimensional synchronisation
- Author(s): J.E. Hershey and R. Yarlagadda
- Source: Electronics Letters, Volume 19, Issue 19, p. 801 –803
- DOI: 10.1049/el:19830546
- Type: Article
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A method for effecting two-dimensional location or synchronisation is proposed. It uses finite field matrices and some of their properties.
Erratum: Thermally accelerated degradation of 1.3 μm BH lasers
- Author(s): Y. Nakano ; M. Fukuda ; H. Sudo ; O. Fujita ; G. Iwane
- Source: Electronics Letters, Volume 19, Issue 19, page: 803 –803
- DOI: 10.1049/el:19830547
- Type: Article
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Erratum: New single-mode single-polarisation optical fibre
- Author(s): A.W. Snyder and F. Rühl
- Source: Electronics Letters, Volume 19, Issue 19, page: 803 –803
- DOI: 10.1049/el:19830548
- Type: Article
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