Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887
banner image
image of Volume 19, Issue 19
Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 19, Issue 19, 15 September 1983

Volumes & issues:

Volume 19, Issue 19

15 September 1983

High-performance millimetre-wave mixer diodes fabricated using a deep mesa etch approach
  • Author(s): J.L. Heaton ; W. Fabian ; F. Spooner ; E.H. Kraemer
  • Source: Electronics Letters, Volume 19, Issue 19, p. 749 –750
  • DOI:  10.1049/el:19830510
  • Type: Article
  • + Show details - Hide details
  • p. 749 –750 (2)
    Schottky-barrier junction mixer diodes compatible with monolithic integration have been fabricated on semi-insulating GaAs substrates using buried VPE n+ layers and deep mesa etch processing. A 590 GHz cutoff frequency was determined using modified DeLoach analysis and fin-line chip mounting. A 5.3 dB (SSB) noise figure and a 4.8 dB conversion loss were obtained at 35 GHz for a pair of chips in a balanced microstrip mixer.
    Add to favourites
    Export citations
Single-longitudinal-mode operation of injection laser coupled to a GRINROD external cavity
High-gain optical amplification of laser diode signal by Raman scattering in single-mode fibres
High-speed Schottky photodiode on semi-insulating GaAs
High-peak-power asymmetric double-heterostructure (GaAl)As-GaAs injection laser
Step response of lossless parabolic transmission line
High-speed pulse-train generation using single-mode-fibre recirculating delay lines
Transient characteristics of latch-up in bulk CMOS
  • Author(s): T. Aoki ; R. Kasai ; S. Horiguchi
  • Source: Electronics Letters, Volume 19, Issue 19, p. 758 –759
  • DOI:  10.1049/el:19830517
  • Type: Article
  • + Show details - Hide details
  • p. 758 –759 (2)
    Transient characteristics of the latch-up turn-on process in bulk CMOS are investigated. A measurement technique that evaluates the threshold trigger pulse current of latch-up and also observes latch-up turn-on transient waveforms is established. Through the comparison between experimental data and precise circuit simulation results, the main factors that determine transient latch-up characteristics are clarified as the base-emitter diffusion capacitors.
    Add to favourites
    Export citations
GaAlAs buried-heterostructure lasers grown by a two-step MOCVD process
  • Author(s): C.S. Hong ; D. Kasemset ; M.E. Kim ; R.A. Milano
  • Source: Electronics Letters, Volume 19, Issue 19, p. 759 –760
  • DOI:  10.1049/el:19830518
  • Type: Article
  • + Show details - Hide details
  • p. 759 –760 (2)
    The fabrication and characterisation of GaAlAs buried-heterostructure laser diodes having low threshold currents (10 mA), high uniformity and planar surface structure, and grown exclusively by metalorganic chemical vapour deposition (MOCVD) are described. Single-longitudinal and transverse-mode operation of these devices has been observed. In addition, considerable suppression of relaxation resonance effects has been observed in the high-frequency modulation of these devices.
    Add to favourites
    Export citations
VLSI digital polarity correlator based on an overloading counter technique
  • Author(s): W.S. Blackley ; M.A. Jack ; J.R. Jordan
  • Source: Electronics Letters, Volume 19, Issue 19, p. 761 –762
  • DOI:  10.1049/el:19830519
  • Type: Article
  • + Show details - Hide details
  • p. 761 –762 (2)
    A VLSI structure to implement a digital polarity correlator using an overloading integrating counter technique is reported. The implementation permits direct cascading of individual correlator chips without using additional circuits, to give complete flexibility in choice of correlator delay and resolution. The design considered offers significant performance advantages in high-speed correlation applications.
    Add to favourites
    Export citations
Infra-red optical loss increase for silica fibre in cable filled with water
Cochannel and intersymbol interferences in QAM system
Material dispersion characteristics of optical fibres prepared by the PCVD process
General form for representing the Fourier transform
High-precision measurements on a compact antenna test range
Estimation of truncation and aliasing errors involved in DFT computation
Hardware method of synchronising processes without using a clock
Power spectrum of sampled signals distorted by jitter
1 Gbit/s transmission experiment over 101 km of single-mode fibre using a 1.55 μm ridge guide C3 laser
  • Author(s): R.A. Linke ; B.L. Kasper ; J.-S. Ko ; I.P. Kaminow ; R.S. Vodhanel
  • Source: Electronics Letters, Volume 19, Issue 19, p. 775 –776
  • DOI:  10.1049/el:19830528
  • Type: Article
  • + Show details - Hide details
  • p. 775 –776 (2)
    Using a cleaved-coupled-cavity (C3) ridge guide laser which oscillates in a single longitudinal mode at 1.55 μm wavelength, we report the first lightwave transmission experiment exploying single-frequency lasers at speeds above 500 Mbit/s. We have achieved digital transmission with a bit-error rate of 2 × 10−10 at 1.0 Gbit/s over 101 km of single-mode fibre. This represents a record for the length of unrepeatered optical transmission for bit rates greater than 500 Mbit/s. Evidence for an error-rate floor, presumably due to residual partition noise, is observed. No such floor was observed in an 84 km—1 Gbit/s experiment using the same C3 laser.
    Add to favourites
    Export citations
Instantaneous voice period measurement for cochlear stimulation
Behaviour of guided modes in systems of parallelly located transmission lines on dielectric substrates
Analysis of coupled asymmetric microstrip lines on a ferrite substrate
  • Author(s): B. Janiczak  and  M. Kitliński
  • Source: Electronics Letters, Volume 19, Issue 19, p. 779 –781
  • DOI:  10.1049/el:19830531
  • Type: Article
  • + Show details - Hide details
  • p. 779 –781 (3)
    The dispersion properties of asymmetric coupled microstrip lines filled with ferrite medium magnetised perpendicularly to the substrate surface are analysed by the spectral-domain technique. The dispersion characteristics of the fundamental C- and π-modes are found as a function of various structural parameters and of biasing magnetic field. New interesting properties of guided modes have been observed.
    Add to favourites
    Export citations
Fabrication of polarisation-maintaining [3×3] single-mode-fibre couplers
Pulse compression acoustic microscopy at 750 MHz
High-speed 1.55 μm single-longitudinal-mode ridge waveguide C3 laser
  • Author(s): I.P. Kaminow ; J.-S. Ko ; R.A. Linke ; L.W. Stulz
  • Source: Electronics Letters, Volume 19, Issue 19, p. 784 –785
  • DOI:  10.1049/el:19830534
  • Type: Article
  • + Show details - Hide details
  • p. 784 –785 (2)
    Fundamental-transverse-mode ridge waveguide laser chips were recleaved to form C3 lasers with a single-longitudinal-mode output stabilised at a fixed wavelength over a wide range of drive currents and temperature. Lasers operated at 1.55 μm at a bit rate of 2 Gbit/s with on-off ratios greater than 10:1 and side-mode suppression greater than 1200:1. A simple method for mapping the stable operating regime is described.
    Add to favourites
    Export citations
Improved agile notch adaptive equaliser
  • Author(s): J.K. Chamberlain  and  A.J. Price
  • Source: Electronics Letters, Volume 19, Issue 19, p. 785 –787
  • DOI:  10.1049/el:19830535
  • Type: Article
  • + Show details - Hide details
  • p. 785 –787 (3)
    A major source of ‘outage’ in high-capacity digital radio-relay systems operating in the lower microwave bands is multipath propagation. Adaptive equalisation of the channel and other remedial measures such as the use of space diversity are often necessary for adequate system performance. A common type of adaptive frequency-domain equaliser employs a variable single-pole filter controlled by three fixed spectrum-sampling detectors. The effectiveness of this type is limited by extraneous causes of spectrum distortion such as tilts. The letter describes a new form of equaliser which searches for and equalises according to minima in the distorted spectrum and is insensitive to extraneous spectrum tilts.
    Add to favourites
    Export citations
Extended calibration aid for six-port network analysers
Modifield C-2C ladder voltage divider for application in PCM A/D convertors
Instabilities in modulation doped field-effect transistors (MODFETs) at 77 K
  • Author(s): R. Fischer ; T.J. Drummond ; W. Kopp ; H. Morkoç ; K. Lee ; M.S. Shur
  • Source: Electronics Letters, Volume 19, Issue 19, p. 789 –791
  • DOI:  10.1049/el:19830538
  • Type: Article
  • + Show details - Hide details
  • p. 789 –791 (3)
    The DC characteristics of AlxGa1−xAs/GaAs MODFETs at 77 K have been investigated. At 77 K the MODFETs typically showed a threshold voltage shift of ≃0.2 V with respect to room temperature. In devices with x = 0.24 large drain biases sometimes resulted in a semipersistent distortion of the drain I/V characteristics. Illuminating the devices removed both the distortion and threshold voltage shift. By using a mole fraction of x = 0.33 and optimising the growth temperature the maximum threshold shift could be reduced to about 0.05 V.
    Add to favourites
    Export citations
New Ga0.47In0.53As sheet-charge field-effect transistor for long-wavelength optoelectronic integration
  • Author(s): C.Y. Chen ; K. Alavi ; A.Y. Cho ; P.A. Garbinski ; Y.M. Pang
  • Source: Electronics Letters, Volume 19, Issue 19, p. 791 –792
  • DOI:  10.1049/el:19830539
  • Type: Article
  • + Show details - Hide details
  • p. 791 –792 (2)
    We demonstrate a Ga0.47In0.53As field-effect transistor with an extremely highly doped (2 × 1018 cm−3 and ultrathin (140 Å) channel layer. A transconductance of 80 mS/mm was measured for a device with a gate length of 2 μm. A photo-conductive detector made from this structure is also reported. This structure may be useful for integrated photo-receiver applications.
    Add to favourites
    Export citations
8 km-long polarisation-maintaining fibre with highly stable polarisation state
  • Author(s): Y. Sasaki ; T. Hosaka ; K. Takada ; J. Noda
  • Source: Electronics Letters, Volume 19, Issue 19, p. 792 –794
  • DOI:  10.1049/el:19830540
  • Type: Article
  • + Show details - Hide details
  • p. 792 –794 (3)
    A new preform fabrication technique for realising long lengths of polarisation-maintaining optical fibres is described. The technique is shown to produce stress-induced birefringent fibres with symmetry and uniformity along the length in the stress-applying parts. The resultant 8.3 km-long fibre whose relative refractive-index difference is 0.6% has been obtained with a crosstalk of −23 dB at 1.15 μm wavelength, where the loss is 1.7 dB/km.
    Add to favourites
    Export citations
Optimum control of packet switching networks
Aging characteristic of light-modulation quartz-crystal oscillator with glass-bar-mounted plano-convex AT-cut quartz-crystal plate
  • Author(s): S. Yamagata
  • Source: Electronics Letters, Volume 19, Issue 19, p. 795 –797
  • DOI:  10.1049/el:19830542
  • Type: Article
  • + Show details - Hide details
  • p. 795 –797 (3)
    A glass-bar-mounted plano-convex AT-cut quartz-crystal resonator (GMPA resonator) is employed in the oscillator to work as a three-port network device. In this case, the light beam is modulated with the dynamic stress of the oscillating quartz-crystal plate and the modulated-light beam is used as a feedback loop of the oscillation. The experimental results for the frequency/temperature characteristic of the oscillator system are presented. About 5 × 10−9 aging rate for a week was realised in the present oscillator.
    Add to favourites
    Export citations
Quasi-two-dimensional analytical solution of Poisson equation in arbitrarily doped short-channel MOSFET
  • Author(s): T. Skotnicki
  • Source: Electronics Letters, Volume 19, Issue 19, p. 797 –798
  • DOI:  10.1049/el:19830543
  • Type: Article
  • + Show details - Hide details
  • p. 797 –798 (2)
    The potential distribution in a short-channel nonuniformly doped MOSFET is strictly two-dimensional and so far has been treated only numerically. In the letter an analytical solution of this problem resulting in an explicit expression for the potential distribution is presented. In order to test its validity this expression was used for threshold voltage calculation for a typical H-MOS transistor and has shown a good agreement with experimental results.
    Add to favourites
    Export citations
Theory of spontaneous emission in gain-guided laser amplifiers
Two-parameter empirical model for rainfall rate distribution
  • Author(s): F. Moupfouma
  • Source: Electronics Letters, Volume 19, Issue 19, p. 800 –801
  • DOI:  10.1049/el:19830545
  • Type: Article
  • + Show details - Hide details
  • p. 800 –801 (2)
    In a previous paper we suggested a three-parameter model providing a good fit for rate distribution. Moreover, this model approximates a log-normal distribution at low rates and a gamma distribution at high rates. In the letter we reduced the number of parameters to two by setting the third one constant. This modified model appears to give good agreement with the experimental data gathered in various locations around the world.
    Add to favourites
    Export citations
Two-dimensional synchronisation
Erratum: Thermally accelerated degradation of 1.3 μm BH lasers
Erratum: New single-mode single-polarisation optical fibre

Most viewed content for this Journal

Article
content/journals/el
Journal
5
Loading

Most cited content for this Journal

Print this page
This is a required field
Please enter a valid email address