Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 19, Issue 12, 9 June 1983
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Volume 19, Issue 12
9 June 1983
High-power InP MISFETs
- Author(s): M. Armand ; D.V. Bui ; J. Chevrier ; N.T. Linh
- Source: Electronics Letters, Volume 19, Issue 12, p. 433 –434
- DOI: 10.1049/el:19830296
- Type: Article
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InP MISFETs with SiO2 as the gate insulator and a deep channel recess have been fabricated. At 9 GHz the highest power output with 4 dB gain was 3.5 W/mm gate width with 33% power added efficiency. This power is more than twice that of the best GaAs MESFET.
MIM gate FET: new GaAs enhancement-mode transistor
- Author(s): E. Kohn and J.M. Dortu
- Source: Electronics Letters, Volume 19, Issue 12, p. 434 –435
- DOI: 10.1049/el:19830297
- Type: Article
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A new type of GaAs FET, the metal-insulator-metal gate FET, is proposed, which combines the advantages of both the GaAs MESFET and the GaAs MISFET. The device is especially suitable for the enhancement mode of operation.
Long delay time for lasing in very narrow graded barrier single-quantum-well lasers
- Author(s): F.C. Prince ; N.B. Patel ; D. Kasemset ; C.S. Hong
- Source: Electronics Letters, Volume 19, Issue 12, p. 435 –437
- DOI: 10.1049/el:19830298
- Type: Article
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We have observed the presence of very long delay times (∼ 1 μs) for lasing in graded barrier single-quantum-well (GB-SQW) lasers for active layers thinner than 150 Ȧ and stripe widths below approximately 10 μm. It is shown that an explanation of this phenomenon based on the dynamic evolution of the waveguide properties of these lasers gives good agreement with experimental results.
Aging characteristics of InGaAsP/InP DFB lasers
- Author(s): Y. Nakano ; G. Motosugi ; Y. Yoshikuni ; T. Ikegami
- Source: Electronics Letters, Volume 19, Issue 12, p. 437 –438
- DOI: 10.1049/el:19830299
- Type: Article
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Aging tests of InGaAsP/InP DFB lasers with a constant light output of 5 mW/facet and ambient temperatures 25°C and 40°C have been carried out. Up to the present, with an aging time of more than 2000 h for six lasers, appreciable degradations have been observed in their driving currents and spectra. This indicates that the corrugation grating near the active region has little influence on short-term reliability of DFB lasers.
New monopulse tracking radar
- Author(s): F.R. Connor
- Source: Electronics Letters, Volume 19, Issue 12, p. 438 –440
- DOI: 10.1049/el:19830300
- Type: Article
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A tracking radar which employs a new frequency-comparison monopulse technique by means of sum and difference frequencies is described. A Cassegrain antenna with a five-horn feed transmits and receives two carrier frequencies, and tracking errors due to target glint and thermal noise are reduced by using a wideband FM technique.
Fundamental mode waveguide at submillimetre wavelengths
- Author(s): A.R. Gillespie and A. Schulz
- Source: Electronics Letters, Volume 19, Issue 12, p. 440 –441
- DOI: 10.1049/el:19830301
- Type: Article
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Experiments with a TE10 waveguide at 460 GHz are described using a simple cross-guide multiplier and a Golay cell. Electroforming production techniques give components with high attenuation, but unconventional methods give acceptable losses.
Polycrystalline silicon sheets for solar cells by improved spinning method
- Author(s): Y. Maeda ; T. Yokoyama ; I. Hide
- Source: Electronics Letters, Volume 19, Issue 12, p. 441 –442
- DOI: 10.1049/el:19830302
- Type: Article
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Large-grain polycrystalline silicon sheets for solar cells, 50 mm square and 0.1 to 0.5 mm thick, have been obtained directly by spinning the silicon melt and diffusing it into mold cavities. Production time from melt is about four sheets per 15 s. Using this sheet, 9 to 10% AM 1.5 solar-cell efficiencies were achieved.
Simplifying key management in electronic fund transfer point of sale systems
- Author(s): H.J. Beker ; J.M.K. Friend ; P.W. Halliden
- Source: Electronics Letters, Volume 19, Issue 12, p. 442 –444
- DOI: 10.1049/el:19830303
- Type: Article
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In the letter we will consider some of the security problems that arise within a large electronic fund transfer point of sale (EFTPOS) system, paying particular attention to the difficulties of key management. In particular, we will introduce the concept of a transaction key which provides automatic key management at almost no extra cost.
Continued-fraction algorithm for biased model reduction
- Author(s): T.N. Lucas
- Source: Electronics Letters, Volume 19, Issue 12, p. 444 –445
- DOI: 10.1049/el:19830304
- Type: Article
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An algorithm is presented for linear system reduction which produces biased models such that combinations of retained time moments and Markov parameters may be varied. It is based on the Cauer continued-fraction expansions of the first and second forms and is easy to apply. An example demonstrates the method.
PIN-bipolar optical receiver using a high-frequency high-beta transistor
- Author(s): A.F. Mitchell ; M.J. O'Mahony ; B.A. Boxall
- Source: Electronics Letters, Volume 19, Issue 12, p. 445 –447
- DOI: 10.1049/el:19830305
- Type: Article
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A PIN-photodiode bipolar-transistor optical receiver for the 1.1–1.6 μm wavelength range capable of operation up to 320 Mbit/s is described. Low input capacitance and high DC transistor current gain are shown to be important in achieving good sensitivity, and these factors are emphasised in the design of the receiver and the devices used. Error-rate measurements show a receiver sensitivity of −34.5 dBm at 280 Mbit/s.
Modifications to MOS transistor model CASMOS for increased accuracy of DC simulations of heavily channel-doped n-MOS devices
- Author(s): M.P. Brassington and C.N. Duckworth
- Source: Electronics Letters, Volume 19, Issue 12, p. 447 –449
- DOI: 10.1049/el:19830306
- Type: Article
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The absence of certain bulk charge terms from the CASMOS model equations leads to a reduced accuracy in the simulation of long-channel n-MOS devices which have channel-doping concentrations > 1×1016 cm−3 This reduction in accuracy is proportional to gate length. The bulk charge terms responsible for this effect are identified and the model equations modified accordingly.
Fast realisation of 2-D digital filters using logarithmic number systems
- Author(s): G.L. Sicuranza
- Source: Electronics Letters, Volume 19, Issue 12, p. 449 –450
- DOI: 10.1049/el:19830307
- Type: Article
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Previous papers of mine have discussed the approximation of 2-D digital filter coefficients with algebraic sums of integer powers of the base in a logarithmic number system. The results already obtained suggest a sequential memory-oriented realisation which is faster than the standard implementation.
Noninverting parasitic-compensated bilinear SC integrator with only one amplifier
- Author(s): S. Eriksson and H. Akhlaghi
- Source: Electronics Letters, Volume 19, Issue 12, p. 450 –452
- DOI: 10.1049/el:19830308
- Type: Article
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A noninverting parasitic-compensated bilinear integrator is presented. For the realisation of the circuit, only one amplifier is needed. A fifth-order lowpass filter, designed using the bilinear transformation and realised with this integrator at the input, is also discussed.
Small-active-area germanium avalanche photodiode for single-mode fibre at 1.3 μm wavelength
- Author(s): T. Mikawa ; T. Kaneda ; H. Nishimoto ; M. Motegi ; H. Okushima
- Source: Electronics Letters, Volume 19, Issue 12, p. 452 –453
- DOI: 10.1049/el:19830309
- Type: Article
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A germanium avalanche photodiode of 30 μm active area diameter has been fabricated and tested. The multiplied dark current is as low as 5 nA at room temperature. A module using this diode and a spherical lens has been assembled and coupled with a single-mode fibre of core diameter 10 μm. The quantum efficiency of the module is 90% at 1.3 μm. The sensitivity is measured at 45 Mbit/s and at 1.3 μm. Minimum detectable powers obtained for 10−11 error rate are −51.9 dBm and −50.7 dBm at 25°C and 50°C, respectively.
Incorporation of Sb in GaAs1−xSbx (x<0.15) by molecular beam epitaxy
- Author(s): J. Klem ; R. Fischer ; T.J. Drummond ; H. Morkoc ; A.Y. Cho
- Source: Electronics Letters, Volume 19, Issue 12, p. 453 –455
- DOI: 10.1049/el:19830310
- Type: Article
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The composition of MBE-grown GaAs1−xSbx (x<0.15) is investigated as a function of growth temperature for constant As and Sb flux and as a function of Sb effusion cell temperature for a fixed growth temperature. Under conditions of constant As and Sb flux, x remains fairly constant for growth temperatures of 480–540°C, but decreases rapidly with increasing temperature in the range 540–640°C. As a function of Sb effusion cell temperature, the Sb mole fraction is shown to increase slightly slower than the Sb vapour pressure.
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