Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 19, Issue 10, 12 May 1983
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Volume 19, Issue 10
12 May 1983
Dual frequency microstrip antenna
- Author(s): Ramesh Garg and K.V.S. Rao
- Source: Electronics Letters, Volume 19, Issue 10, p. 357 –358
- DOI: 10.1049/el:19830247
- Type: Article
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p.
357
–358
(2)
A single-feed dual-frequency microstrip antenna is reported. It can be impedance-matched independently at the two frequencies of operation. The tested antenna has a VSWR of 1.33 at 2.32 GHz and 1.12 at 9.425 GHz. The configuration reported here can be impedance matched over a wider frequency range using standard impedance-matching techniques.
Generalised lattice transformation for crystal filters
- Author(s): R.C. Peach
- Source: Electronics Letters, Volume 19, Issue 10, p. 358 –359
- DOI: 10.1049/el:19830248
- Type: Article
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p.
358
–359
(2)
Crystal lattice filters are usually based on the transformation of a lowpass Brune section to a second-order lattice section. This letter describes a generalisation, which transforms n Brune sections simultaneously into a lattice of order 2n, and which offers advantages for high-order filters, or filters with complex transmission zeros.
Multimode interference mechanism in V(z) curves obtained by acoustic line-focus beam
- Author(s): J. Kushibiki ; K. Horii ; N. Chubachi
- Source: Electronics Letters, Volume 19, Issue 10, p. 359 –361
- DOI: 10.1049/el:19830249
- Type: Article
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p.
359
–361
(3)
The multimode interference mechanism in the acoustic material signatures of V(z) curves, which generally deforms the dip intervals and the shape, is investigated theoretically and experimentally for the acoustic line-focus beam. It is shown, taking a (111)-Si substrate as an example, that V(z) curves associated with multiple leaky waves are represented as a superposition of elemental V(z) curves with different characteristic dip intervals corresponding to the respective velocities of the leaky waves.
Heterodyne OTDR at 0.82 μm
- Author(s): E. Bødtker ; B. Tromborg ; J. Mark ; C.J. Nielsen
- Source: Electronics Letters, Volume 19, Issue 10, p. 361 –362
- DOI: 10.1049/el:19830250
- Type: Article
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p.
361
–362
(2)
We report on a heterodyne OTDR measurement on a single-mode fibre at a wavelength of 0.82 μm using a stabilised semiconductor laser. In the actual set-up the dynamic range was limited by polarisation noise.
Longitudinal-mode characteristics for 1.3 μm GaInAsP/InP DFB lasers just below the threshold current
- Author(s): H. Okuda ; J. Kinoshita ; Y. Hirayama ; Y. Uematsu
- Source: Electronics Letters, Volume 19, Issue 10, p. 362 –363
- DOI: 10.1049/el:19830251
- Type: Article
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p.
362
–363
(2)
The stopband and the Bragg wavelength in a DFB laser were clearly observed by measuring longitudinal-mode characteristics just below the threshold current. It became clear that the first-order longitudinal-mode oscillation did not always occur. Coupling coefficients κ for the DFB laser were deduced to be 10 to 40 cm−1 from the stopband width.
Fast hardware implementation of the Winograd Fourier transform algorithm
- Author(s): M.D. Macleod and N.L. Bragg
- Source: Electronics Letters, Volume 19, Issue 10, p. 363 –365
- DOI: 10.1049/el:19830252
- Type: Article
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p.
363
–365
(3)
We describe a novel partitioning of small Winograd DFTs into two identical subunits, each of which computes a real-input DFT. A bit-serial arithmetic single IC implementation in semicustom or custom LSI is described. A fast hardware WFTA is then proposed which is efficient for complex or real input data.
Determination of minority carrier lifetime and effective back surface recombination velocity in BSF silicon solar cells from transient measurements
- Author(s): S.C. Jain ; S.K. Agarwal ; U.C. Ray
- Source: Electronics Letters, Volume 19, Issue 10, p. 365 –367
- DOI: 10.1049/el:19830253
- Type: Article
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p.
365
–367
(3)
The method of determining the base lifetime τB and the effective surface recombination velocity Seff in a BSF solar cell from the transient decay of open-circuit voltage and short-circuit current is extended to include emitter recombinations. If the emitter recombinations in modern Si solar cells are neglected in interpreting the experimental data, the experimental value of Seff is found to be in large error.
(GaAl)As/GaAs heterojunction bipolar transistors with graded composition in the base
- Author(s): D.L. Miller ; P.M. Asbeck ; R.J. Anderson ; F.H. Eisen
- Source: Electronics Letters, Volume 19, Issue 10, p. 367 –368
- DOI: 10.1049/el:19830254
- Type: Article
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p.
367
–368
(2)
The first fabrication and high-speed operation of a three-terminal (AlGa)As/GaAs heterojunction bipolar transistor with graded bandgap base is reported. Cutoff frequencies up to 16 GHz have been achieved in devices fabricated from material made by molecular beam epitaxy. This work demonstrates the feasibility of using a graded (AlGa)As base to enhance the speed of heterojunction bipolar transistors.
Simple formulas giving temperature profiles in active layer of stripe-geometry laser diode without oxide barriers
- Author(s): W. Nakwaski
- Source: Electronics Letters, Volume 19, Issue 10, p. 368 –370
- DOI: 10.1049/el:19830255
- Type: Article
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p.
368
–370
(3)
The simple, approximated formulas describing the temperature distribution in the active layer of the stripe-geometry laser diode without oxide barriers has been derived in this letter.
0.81 μm band AlGaAs/GaAs double-channel planar buried-heterostructure laser with large optical cavity
- Author(s): M. Ueno ; H. Kawano ; T. Furuse ; I. Sakuma
- Source: Electronics Letters, Volume 19, Issue 10, p. 370 –371
- DOI: 10.1049/el:19830256
- Type: Article
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p.
370
–371
(2)
0.81 μm-band AlGaAs/GaAs double-channel planar buried-heterostructure laser diodes with large optical cavity have been developed as light sources for use in analogue optical fibre communication systems. Linear light-output/current characteristics and a single-longitudinal-mode spectrum at a modulation frequency f = 100 MHz with modulation index m = 0.9 have been attained.
Reduction of sidelobe level of reflector antennas by covering feed struts with a periodic structure
- Author(s): V. Hombach
- Source: Electronics Letters, Volume 19, Issue 10, p. 371 –373
- DOI: 10.1049/el:19830257
- Type: Article
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p.
371
–373
(3)
A periodic structure has been investigated and optimised which can be used to cover the struts of reflector antennas in order to reduce the far sidelobes caused by scattering from the struts.
Use of a 252Cf source in cosmic ray simulation studies on CMOS memories
- Author(s): T.K. Sanderson ; D. Mapper ; J.H. Stephen ; J. Farren
- Source: Electronics Letters, Volume 19, Issue 10, p. 373 –374
- DOI: 10.1049/el:19830258
- Type: Article
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p.
373
–374
(2)
A laboratory 252Cf source has been found to provide a convenient and satisfactory technique for evaluating the susceptibility of VLSI static RAMs to cosmic-ray-induced single-event upsets. The calibration and use of the system are described, and results for some commercial CMOS RAMs are presented.
Uplink depolarisation control in TV feeder link Earth stations
- Author(s): M. Nouri
- Source: Electronics Letters, Volume 19, Issue 10, p. 374 –376
- DOI: 10.1049/el:19830259
- Type: Article
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p.
374
–376
(3)
The performance of two nondissipative devices used as feed elements for adaptive uplink depolarisation control in 18 GHz TV feeder links is analysed. The operational parameters under the presence of heavy precipitation are evaluated and practical limitations are discussed.
Capacitance/voltage characteristics of semiconductor-insulator-semiconductor (SIS) structure
- Author(s): K. Nagai ; Y. Hayashi ; T. Sekigawa
- Source: Electronics Letters, Volume 19, Issue 10, p. 376 –377
- DOI: 10.1049/el:19830260
- Type: Article
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p.
376
–377
(2)
Ideal capacitance/voltage curves of Si(2)-SiO2-Si(1) structure are computed in the absence of surface states and oxide changes with the SiO2 thickness, conductivity types, impurity concentrations of Si(1) and (2) as parameters. Impurity concentrations of Si(1), (2) and SiO2 thickness can be estimated from the measured capacitance/voltage curves by comparing them with the calculated ones as is the case with the conventional MOS structure.
Coupled microstrip parallel-gap model for improved filter and coupler design
- Author(s): M. Kirschning ; R.H. Jansen ; N.H.L. Koster
- Source: Electronics Letters, Volume 19, Issue 10, p. 377 –379
- DOI: 10.1049/el:19830261
- Type: Article
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p.
377
–379
(3)
The parallel gap formed by the open end of a section of coupled microstrip lines is described analytically by its even and odd mode equivalent fringing field lengths. These are given as functions of line width, gap width and substrate dielectric constant. The use of these parameters in filter and coupler design is outlined briefly.
Linear algebra and extended mappings generalise public key cryptographic knapsack algorithms
- Author(s): Y. Desmedt ; J. Vandewalle ; R. Govaerts
- Source: Electronics Letters, Volume 19, Issue 10, p. 379 –381
- DOI: 10.1049/el:19830262
- Type: Article
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p.
379
–381
(3)
The original Merkle-Hellman knapsack algorithm is the most practical of the public key algorithms, but is considered insecure. Improvements have been proposed. In the letter the improvements are unified and extended using linear algebra and extended mappings.
Comment: Modified canonic ladder realisation of IIR digital filters
- Author(s): J.I. Acha ; A. Ayerbe ; R. Robles-Díaz
- Source: Electronics Letters, Volume 19, Issue 10, page: 381 –381
- DOI: 10.1049/el:19830263
- Type: Article
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p.
381
(1)
Reply: Modified canonic ladder realisation of IIR digital filters
- Author(s): Gong-Tao Yan
- Source: Electronics Letters, Volume 19, Issue 10, p. 381 –382
- DOI: 10.1049/el:19830264
- Type: Article
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p.
381
–382
(2)
TE11 modes in straight and curved circular waveguide with ‘deformed’ cross-section
- Author(s): F. Jecko ; N. Penaud ; A. Papiernik
- Source: Electronics Letters, Volume 19, Issue 10, p. 382 –383
- DOI: 10.1049/el:19830265
- Type: Article
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p.
382
–383
(2)
The two polarisations of TE11 modes are shown to be non-degenerated in a circular waveguide when its cross-section is ‘conveniently deformed’. So the crosspolar discrimination is improved in such a curved guide. This permits the use of this structure as an antenna feeder at frequencies about 12 GHz.
High-resolution mapping of pn-junctions by computer-processed EBIC-signals
- Author(s): H.K. Schink and H. Rehme
- Source: Electronics Letters, Volume 19, Issue 10, p. 383 –385
- DOI: 10.1049/el:19830266
- Type: Article
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p.
383
–385
(3)
Computer processing is introduced to increase resolution in EBIC measurements.
Temporal and spectral characteristics of rapidly gain-switched GaAs/GaAlAs buried-heterostructure lasers
- Author(s): G. Veith ; J. Kuhl ; E.O. Göbel
- Source: Electronics Letters, Volume 19, Issue 10, p. 385 –387
- DOI: 10.1049/el:19830267
- Type: Article
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p.
385
–387
(3)
The temporal and spectral output of GaAs/GaAlAs buried-heterostructure lasers under excitation with 60 ps electrical pulses is investigated for different DC bias conditions. Optical pulses comparable in width to the electrical pulses can be obtained only if the DC bias is below or close to threshold, where multimode emission is observed. For DC bias well above threshold the laser remains single-mode; however, the optical pulses are considerably broadened.
Composition control in proton-exchanged LiNbO3
- Author(s): J.L. Jackel ; C.E. Rice ; J.J. Veselka
- Source: Electronics Letters, Volume 19, Issue 10, p. 387 –388
- DOI: 10.1049/el:19830268
- Type: Article
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p.
387
–388
(2)
The amount of hydrogen in Li1−xHxNbO3 layers prepared by proton exchange of LiNbO3 in benzoic acid melts can be limited by adding lithium compounds to the melt. Limiting exchange prevents surface damage, a problem primarily affecting y-cut substrates, and reduces scattering in exchanged guides.
Feedback-induced noise in index-guided semiconductor lasers and its reduction by modulation
- Author(s): K. Stubkjaer and M.B. Small
- Source: Electronics Letters, Volume 19, Issue 10, p. 388 –390
- DOI: 10.1049/el:19830269
- Type: Article
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p.
388
–390
(3)
We report a reduction in feedback noise of 15–20 dB by direct modulation of the laser with a 2–5 mA modulation current. The reduction is almost independent of modulation frequency in the frequency range from 50 MHz to 200 MHz, but depends on the external cavity length. The external cavity lengths considered are 5–15 cm.
Asynchronous multiplexing for an optical-fibre local-area network
- Author(s): P.A. Davies and A.A. Shaar
- Source: Electronics Letters, Volume 19, Issue 10, p. 390 –392
- DOI: 10.1049/el:19830270
- Type: Article
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p.
390
–392
(3)
By trading some of the very high bandwidth capability of an optical-fibre channel it is possible to produce an attractively simple asynchronously multiplexed local-area network.
Control of locally testable duplex system for large-scale implementation
- Author(s): F. Lombardi
- Source: Electronics Letters, Volume 19, Issue 10, p. 392 –393
- DOI: 10.1049/el:19830271
- Type: Article
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p.
392
–393
(2)
In the letter the control of a duplex system is presented. This is characterised by the locality of the testing devices and by easy expandability to a larger system with large-scale attributes. The control suggests the viability of a VLSI chip implementation by a modular design.
High-gain low-noise GaAlAs-GaAs phototransistors
- Author(s): A. Scavennec ; D. Ankri ; C. Besombes ; C. Courbet ; J. Riou ; F. Héliot
- Source: Electronics Letters, Volume 19, Issue 10, p. 394 –395
- DOI: 10.1049/el:19830272
- Type: Article
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p.
394
–395
(2)
GaAlAs-GaAs heterojunction phototransistors designed for a high sensitivity have been fabricated. Very large current gains have been observed (over 104), together with moderate input capacitances (about 5 pF). With these figures bipolar phototransistors appear as real candidates for low-noise large-bandwidth optical receivers; from signal/noise measurements on large devices, a minimum detectable power of −34.5 dBm at 0.82 μm was evaluated for a 140 Mbit/s data rate
Proposing a new backward solar cell
- Author(s): K.K. Govil
- Source: Electronics Letters, Volume 19, Issue 10, p. 395 –397
- DOI: 10.1049/el:19830273
- Type: Article
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p.
395
–397
(3)
The object of the letter is to propose a new backward solar cell. The reason for calling it backward is because under dark conditions it behaves as a backward diode. The main advantage of this solar cell is the higher open-circuit voltage compared to the currently used p-n solar cell.
Microprocessor simulation of variable sea conditions
- Author(s): C.K. Li
- Source: Electronics Letters, Volume 19, Issue 10, p. 397 –398
- DOI: 10.1049/el:19830274
- Type: Article
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p.
397
–398
(2)
The technique of using a digital filter to simulate sea conditions is investigated and the functional relation between pole variation in such a filter and the corresponding significant wave height is established. The implementation of the digital filter using a microprocessor is also considered.
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