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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 18, Issue 7, 1 April 1982

Volumes & issues:

Volume 18, Issue 7

1 April 1982

Transmission-line model analysis of a lossy rectangular microstrip patch
Implantation annealing by thermal imaging
  • Author(s): D. Eirug Davies  and  E.F. Kennedy
  • Source: Electronics Letters, Volume 18, Issue 7, p. 282 –284
  • DOI:  10.1049/el:19820193
  • Type: Article
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  • p. 282 –284 (3)
    Elliptical mirrors have been used to image incoherent light sources onto silicon for the purpose of annealing implanted layers. It is found that ∼1 s of illumination is sufficient for annealing areas that approximate the dimensions of the source. Low-dose boron implants are found to be fully activated without any significant diffusive redistribution. Amorphous layers produced by implanting arsenic can be annealed to exhibit minimum yields of ∼4% from back-scattering and give sheet resistivities comparable with thermal annealed values. It is envisioned that the annealing can be expanded to large areas and throughputs by physically moving wafers through the 2 in-long heating strip produced by the present configuration.
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Effects of parasitics in lowpass elliptic filters for mic
  • Author(s): F. Giannini ; M. Salerno ; R. Sorrentino
  • Source: Electronics Letters, Volume 18, Issue 7, p. 284 –285
  • DOI:  10.1049/el:19820194
  • Type: Article
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  • p. 284 –285 (2)
    The possibility of realising 5th-or higher-order Cauer-Chebyshev lowpass filters by cascading rectangular microwave integrated structures is demonstrated. A new equivalent circuit of the rectangular element is introduced which accounts for the parasitic inductances due to higher-order modes. A simple adjusting procedure is developed which improves the passband behaviour of the filters, taking advantage of the presence of the parasitics.
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Electronically scanned cmt detector array for the 8–14 μm band
Amplitude and phase scintillation measurements on 8.2 km line-of-sight path at 30 GHz
Bidirectional ripple clock scheme for serial-parallel-serial charge-coupled devices
New method for determining distribution of interface states in an MIS system
Megahertz linewidth from a 1.5 μm semiconductor laser with HeNe laser injection
Modified ebers-moll model
Equivalent circuit model for arrays of square loops
FIR digital filters with simultaneous conditions on amplitude and delay
Variation of minority carrier lifetime with level of injection in p-n-junction devices
  • Author(s): S.K. Agarwal ; S.C. Jain ; S. Harsh
  • Source: Electronics Letters, Volume 18, Issue 7, p. 298 –299
  • DOI:  10.1049/el:19820203
  • Type: Article
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  • p. 298 –299 (2)
    Minority-carrier lifetime as a function of level of injection has been measured for a number of Si and Ge p-n-junction diodes using reverse recovery and forward current-induced voltage decay methods. It is found that the lifetime always increases with injection level if the effect of the finite thickness of the base of the diode is taken into account while interpreting the experimental results. The decrease in the life-time values reported in the literature appears to be due to erroneous interpretation of the experimental data.
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GaAs 256-bit static RAM
High-frequency intensity noise behaviour during accelerated life tests of narrow-stripe proton-isolated DH AlGaAs lasers for optical communications
  • Author(s): J.W.M. Biesterbos  and  H.W.M. Salemink
  • Source: Electronics Letters, Volume 18, Issue 7, p. 300 –302
  • DOI:  10.1049/el:19820205
  • Type: Article
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  • p. 300 –302 (3)
    An investigation has been made into the influence of life testing of narrow-stripe proton-isolated DH AlGaAs on their output fluctuation spectra in the range 0.1–1.6 GHz. The lasers show intrinsic optical fluctuation behaviour before life testing. The experiments indicate that this behaviour is maintained for facet-coated lasers during at least 5000 h of accelerated life testing at elevated temperatures.
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Current-induced frequency modulation in diode lasers
Intensity fluctuations in longitudinal modes of a nearly single-mode AlGaAs laser
Oxidation of (n)-InP by nitric acid
  • Author(s): C. Michel  and  J.J. Ehrhardt
  • Source: Electronics Letters, Volume 18, Issue 7, p. 305 –307
  • DOI:  10.1049/el:19820208
  • Type: Article
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  • p. 305 –307 (3)
    Au-oxide-semiconductor barriers have been studied in n-type InP. A comparison was made, using the ESCA technique and current/voltage characteristics, between different natural oxides obtained with nitric acid as reagent. With regard to the ideality factor, barrier height and oxide resistivity, the best oxide is obtained with acid in a gaseous phase, and the XPS spectra give an interpretation of the oxide composition.
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Waveguide/resonant-disc circuits for millimetre-wave devices
  • Author(s): W.H. Haydl ; R. Bosch ; J. Rüdiger
  • Source: Electronics Letters, Volume 18, Issue 7, p. 307 –308
  • DOI:  10.1049/el:19820209
  • Type: Article
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  • p. 307 –308 (2)
    Bias circuits using resonant discs have been employed for millimetre-wave transferred-electron (TE) diodes operating at their second or third harmonic frequencies in the V (50–75 GHz) and W (75–110 GHz) bands. It is shown that this type of circuit exhibits resonances at frequencies in the lower millimetre-wave range, corresponding to the fundamental oscillation frequency of diodes typically used. In addition, the circuit provides efficient coupling to the waveguide circuit at the higher (harmonic) operating frequency. By tuning the fundamental oscillation frequency of a number of resonant discs, the power-frequency spectrum of the TE device can be determined, which is demonstrated for a device with its maximum third-harmonic power output at 94 GHz.
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Direct measurement of FM noise in 80 GHz solid-state oscillators
  • Author(s): T.J. Simmons  and  D.C. Smith
  • Source: Electronics Letters, Volume 18, Issue 7, p. 308 –309
  • DOI:  10.1049/el:19820210
  • Type: Article
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  • p. 308 –309 (2)
    A technique for the measurement of FM noise in W-band oscillators is described. The method is ‘direct’, since it makes use of a tuned frequency discriminator operating at the fundamental oscillator frequency. The equipment is compared with other types of noise measurement systems, and the important factors affecting sensitivity are noted. Measurements of the FM noise performance of oscillators utilising GaAs TEOs and Si impatts are presented.
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Mobility calculation of two-dimensional electron gas in GaAs/AlGaAs heterostructure at 4.2 K
Nonperiodic sampling and model matching

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