Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 4, 18 February 1982
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Volume 18, Issue 4
18 February 1982
High-power diode lasers for optical recording with operating lifetimes in excess of 10 000 h
- Author(s): M. Ettenberg and D. Botez
- Source: Electronics Letters, Volume 18, Issue 4, p. 153 –154
- DOI: 10.1049/el:19820105
- Type: Article
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–154
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Real-time lifetest data are reported which show that single spatial mode CDH-LOC diode lasers can operate stably at 25°C ambient temperature for greater than 10000 h at 40–50 mW output power and 50% duty cycle. This makes CDH-LOC lasers useful for optical disc recording, as well as for a variety of other applications that require high output power in a stable nonastigmatic farfield beam pattern.
Effect of disc reflectors on radiation impedance of short-backfire antenna
- Author(s): S.D. Marougi
- Source: Electronics Letters, Volume 18, Issue 4, p. 154 –156
- DOI: 10.1049/el:19820106
- Type: Article
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–156
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Using near-field analysis, the influence of large and small disc reflectors used in short-backfire antennas on the radiation impedance of a dipole feed element has been investigated. The effect of each reflector is evaluated separately, and the overall change in the radiation impedance of the dipole is predicted.
Plasma anodisation of Ga1−xInxAs (x=0.35 and 0.10) and study of MOS interface properties
- Author(s): S. Gourrier and J.P. Chane
- Source: Electronics Letters, Volume 18, Issue 4, p. 156 –157
- DOI: 10.1049/el:19820107
- Type: Article
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Oxides have been grown on n-type Ga1−xInxAs/GaAs wafers (x=0.35 and 0.10) using plasma anodisation. According to C/V measurements, the surface can be biased into inversion and probably accumulation on Ga0.65In0.35As. The interface trap density is about 1012 cm−2eV−1 near midgap, and about 1013 cm−2eV−1 near flatband. MOS capacitors on Ga0.90In0.10As exhibit a high density of interface States 0.4–0.5 eV below the conduction band.
InGaAsP/InP LEDs integrated with monitoring detector
- Author(s): S. Sakai ; T. Aoki ; M. Umeno
- Source: Electronics Letters, Volume 18, Issue 4, p. 157 –158
- DOI: 10.1049/el:19820108
- Type: Article
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–158
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A novel structure for an integrated LED-detector device is fabricated. The conversion efficiency, defined by (detector short circuit current)/(current injected into the LED), reaches 27% and response time of 2.2 ns is obtained.
Tapered backfire helical antenna with loaded termination
- Author(s): H. Nakano ; J. Yamauchi ; S. Iio
- Source: Electronics Letters, Volume 18, Issue 4, p. 158 –159
- DOI: 10.1049/el:19820109
- Type: Article
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–159
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In order to improve the radiation characteristics of a backfire bifilar helical antenna, a means of terminating the arm ends with a resistor is numerically and experimentally investigated. Owing to the reduction of reflected current, the present backfire helix realises an excellent front-to-back ratio and axial ratio, while maintaining inherent absolute gain.
High-speed NMOS operational amplifier fabricated using VLSI technology
- Author(s): T. Ishihara ; T. Enomoto ; M. Yasumoto ; T. Aizawa
- Source: Electronics Letters, Volume 18, Issue 4, p. 159 –161
- DOI: 10.1049/el:19820110
- Type: Article
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A small wideband NMOS operational amplifier for high-speed LSIs was fabricated using VLSI technology with a minimum channel width of 3 μm and minimum gate length of 4.5 μm. Results such as 0.062 mm2 silicon area, 66 dB DC open-loop gain, 9.6 MHz gain-bandwidth product, +13.8/−19.3 V/μs slew rates and about 200 ns settling time were successfully obtained. The technique to improve transient response is also discussed.
Quasiplanar 3 dB hybrid for millimetre-wave integrated circuits
- Author(s): H. Callsen and L.-P. Schmidt
- Source: Electronics Letters, Volume 18, Issue 4, p. 161 –163
- DOI: 10.1049/el:19820111
- Type: Article
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–163
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A quasiplanar 3 dB hybrid suitable for integration in millimetre-wave fin-line circuits is presented. The performance of the device is characterised by 0.5 dB insertion loss, less than 0.5 dB imbalance and 20–25 dB isolation over the entire Ka-band (26.5–40 GHz).
Recrystallisation of CVD poly-Si on insulator by dual electron-beam processing
- Author(s): J.R. Davis ; R.A. McMahon ; H. Ahmed
- Source: Electronics Letters, Volume 18, Issue 4, p. 163 –164
- DOI: 10.1049/el:19820112
- Type: Article
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Large areas of 〈100〉 oriented single-crystal films have been produced, using the lateral seeding technique, from polycrystalline silicon deposited on SiO2. One electron beam was used to provide generalised substrate heating, and another swept a localised molten zone in the deposited silicon.
Material dispersion in fluoride glasses
- Author(s): K. Jinguji ; M. Horiguchi ; S. Shibata ; T. Kanamori ; S. Mitachi ; T. Manabe
- Source: Electronics Letters, Volume 18, Issue 4, p. 164 –165
- DOI: 10.1049/el:19820113
- Type: Article
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Material-dispersion measurements are reported on fluoride glass for infra-red optical fibres. Bulk glasses prepared by the conventional casting method were measured in the 0.4–4.3 μm wavelength range. Observed zero-material-dispersion wavelengths were 1.62 μm for BaF2-GdF3-ZrF4 glass and 1.48 μm for BaF2-CaF2-YF3-AlF3 glass.
Breakdown voltage of a plasma-filled gap
- Author(s): J. Santiago ; P.R. Smy ; R.M. Clements
- Source: Electronics Letters, Volume 18, Issue 4, p. 165 –167
- DOI: 10.1049/el:19820114
- Type: Article
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The letter reports a series of measurements on the breakdown voltage of a two-electrode gap immersed in an arc plasma.
Punch-through technique for charge collection in an extrinsic Si IRCCD
- Author(s): S.D. Brotherton ; A. Gill ; J.M. Shannon ; G.J. Parker
- Source: Electronics Letters, Volume 18, Issue 4, p. 167 –168
- DOI: 10.1049/el:19820115
- Type: Article
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–168
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A compact punch-through charge collection structure, suitable for incorporation into an extrinsic silicon infra-red imaging CCD, is described. The operation of the structure is demonstrated using a 16-bit surface channel CCD fabricated in an n-epitaxial layer on an indium-doped substrate.
Study of SAW properties of temperature-compensated orientations in berlinite
- Author(s): D.S. Bailey ; F. Josse ; D.L. Lee ; J. Andle ; W. Soluch ; J.F. Vetelino ; B.H.T. Chai
- Source: Electronics Letters, Volume 18, Issue 4, p. 168 –170
- DOI: 10.1049/el:19820116
- Type: Article
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A study of the surface acoustic wave (SAW) properties in three singly and two doubly rotated temperature-compensated berlinite cuts has been performed. The measured SAW properties were the velocity, the electromagnetic to acoustic coupling (Δv/v) and the frequency/temperature characteristics (Δf/f). Comparisons are made between theory and experiment.
Preparation of low-loss fluoride glass fibre
- Author(s): S. Mitachi and T. Miyashita
- Source: Electronics Letters, Volume 18, Issue 4, p. 170 –171
- DOI: 10.1049/el:19820117
- Type: Article
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–171
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By using a ‘build-in casting’ method, a low-transmission-loss fluoride glass fibre was obtained, whose minimum loss was 21 dB/km at 2.55 μm. A loss-factor analysis for the fibre clarified that the main factor was impurity absorption; Fe2+ and OH were especially dominant.
High-efficiency millimetre-wave InP TEOs made by liquid phase epitaxy
- Author(s): K.H. Yen and J.J. Berenz
- Source: Electronics Letters, Volume 18, Issue 4, p. 171 –172
- DOI: 10.1049/el:19820118
- Type: Article
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–172
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High-efficiency millimetre-wave InP TEOs have been made using epitaxial material grown by liquid phase epitaxy. 417 mW has been achieved at 34 GHz with 7.6% efficiency.
Switching speed of a circuit with positive feedback
- Author(s): P.J. Langlois
- Source: Electronics Letters, Volume 18, Issue 4, p. 172 –174
- DOI: 10.1049/el:19820119
- Type: Article
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–174
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The letter gives a theoretical explanation of the increase in switching speed of a thyristor-type regenerative circuit when capacitively loaded.
Tunable low-reflection waveguide termination
- Author(s): M.A. Wood
- Source: Electronics Letters, Volume 18, Issue 4, p. 174 –175
- DOI: 10.1049/el:19820120
- Type: Article
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174
–175
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A low-reflection sliding load in WG11A is described. The load is constructed from sections of lossless and lossy dielectric which completely fill the waveguide cross-section and which can be moved longitudinally in the guide with respect to each other. The reflection coefficient can be set to zero to within 0.0002.
Evaluation of outage probability of microwave radio relay systems carrying both analogue (FM) and digital (FSK) RF channels
- Author(s): F. Ananasso
- Source: Electronics Letters, Volume 18, Issue 4, p. 175 –177
- DOI: 10.1049/el:19820121
- Type: Article
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In the letter, a new formula is derived for the (multipath) outage probability of (both analogue and digital) signals present in an existing analogue radio relay link operating below 11 GHz when some analogue channels are replaced by digital ones.
High-T0 low-threshold crescent InGaAsP mesa-substrate buried-heterojunction lasers
- Author(s): N. Tamari and H. Shtrikman
- Source: Electronics Letters, Volume 18, Issue 4, p. 177 –178
- DOI: 10.1049/el:19820122
- Type: Article
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–178
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A crescent-shape mesa-substrate buried-heterostructure (CMSB) InGaAsP laser (λ = 1.3 μm) was grown by a single-step liquid phase epitaxy. Threshold current as low as 25 mA with 200 μm cavity length under pulse operation and linear light/current characteristics up to five times Ith were obtained. T0 as high as 97°C was achieved for the first time for quaternary lasers. High output power, ∼15 mW/facet, has been realised.
Active load technique for load-pull characterisation at microwave frequencies
- Author(s): G.P. Bava ; U. Pisani ; V. Pozzolo
- Source: Electronics Letters, Volume 18, Issue 4, p. 178 –180
- DOI: 10.1049/el:19820123
- Type: Article
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–180
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The letter describes a load-pulling method that allows an extension of the two-signal approach to applications where the output frequency spectrum is different from the input one, as in the case of power devices operating with multicarrier input signals.
Inversion-mode InP MISFET employing phosphorus-nitride gate insulator
- Author(s): T. Kobayashi and Y. Hirota
- Source: Electronics Letters, Volume 18, Issue 4, p. 180 –181
- DOI: 10.1049/el:19820124
- Type: Article
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A phosphorus-nitride (P3N5) CVD was newly developed for preparation of a high-quality gate insulator on an InP substrate. This film exhibited ohmic conduction with a breakdown field intensity as high as 1×107 V/cm. An inversion-mode n-channel InP MISFET was fabricated employing the phosphorus-nitride CVD film as a gate insulator. An effective electron mobility of 1000–1640 cm2/Vs was obtained for this device.
Anisotropic linear target recognition from RCS diagram
- Author(s): J. Saillard
- Source: Electronics Letters, Volume 18, Issue 4, p. 181 –183
- DOI: 10.1049/el:19820125
- Type: Article
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–183
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The letter proposes a recognition method for a linear target consisting of a finite number of anisotropic scatterers based only on knowledge of the RCS diagram in the farfield. It is supposed that, for a given viewing window, the contributing RCS diagrams are isotropic.
STW resonances on corrugated plates of finite thickness
- Author(s): B.A. Auld ; A. Renard ; J. Henaff
- Source: Electronics Letters, Volume 18, Issue 4, p. 183 –184
- DOI: 10.1049/el:19820126
- Type: Article
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Propagation of surface transverse waves on a corrugated plate has been analysed. Results are presented for both thin and thick isotropic plates, showing that the dispersion curves for the lowest mode correspond in the second case to a semi-infinite substrate. A frequency equation is developed for planar resonators based on this type of wave propagation, applicable to both isotropic and rotated Y-cut trigonal plates.
Active-phase-compensated biquadratic highpass filter
- Author(s): K.K. Tuladhar
- Source: Electronics Letters, Volume 18, Issue 4, p. 184 –185
- DOI: 10.1049/el:19820127
- Type: Article
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A new three-amplifier active-phase-compensated biquadratic highpass filter is presented. It is shown that for the matched amplifiers the circuit exhibits a stable Q-factor and, unlike the Akerberg and Mossberg highpass circuit, feedforward paths are not required.
Comment: OH reduction in preforms by isotope exchange
- Author(s): J. Stone and P.J. Lemaire
- Source: Electronics Letters, Volume 18, Issue 4, p. 185 –186
- DOI: 10.1049/el:19820128
- Type: Article
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Reply: OH reduction in preforms by isotope exchange
- Author(s): E. Modone and G. Roba
- Source: Electronics Letters, Volume 18, Issue 4, page: 186 –186
- DOI: 10.1049/el:19820129
- Type: Article
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