Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 3, 4 February 1982
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Volume 18, Issue 3
4 February 1982
High-speed two-dimensional electron-gas FET logic
- Author(s): Pham N. Tung ; D. Delagebeaudeuf ; M. Laviron ; P. Delescluse ; J. Chaplart ; Nuyen T. Linh
- Source: Electronics Letters, Volume 18, Issue 3, p. 109 –110
- DOI: 10.1049/el:19820073
- Type: Article
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Ring oscillators using planar enhancement-mode two-dimensional electron-gas FETs (TEGFETs) and ungated transistor loads are described. A propagation delay time of 19.1 ps has been measured at room temperature, the lowest yet reported for this temperature. Improvements on materials and circuit design should lead to a delay time of 10 ps at 300 K.
Filter response of single-mode fibre recirculating delay lines
- Author(s): J.E. Bowers ; S.A. Newton ; W.V. Sorin ; H.J. Shaw
- Source: Electronics Letters, Volume 18, Issue 3, p. 110 –111
- DOI: 10.1049/el:19820074
- Type: Article
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Single-mode fibre recirculating delay lines have been made on a single continuous loop of fibre with the use of fibre directional couplers. These devices have been demonstrated as bandpass filters and as notch filters at centre frequencies from 0.5 MHz to 1.3 GHz with a notch depth of over 45 dB.
AlGaAs/GaAs JFETs by organo-metallic and molecular beam epitaxy
- Author(s): T.J. Maloney ; R.R. Saxena ; Y.G. Chai
- Source: Electronics Letters, Volume 18, Issue 3, p. 112 –113
- DOI: 10.1049/el:19820075
- Type: Article
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Normally-off and normally-on AlGaAs/GaAs heterojunction gate GaAs FETs (HJFETs) for high-speed logic applications have been fabricated with molecular beam epitaxy (MBE) and organometallic vapour phase epitaxy (OM-VPE). The best normally-off devices used MBE n-GaAs active layers and OM-VPE gate layers of p+-AlGaAs and p+-GaAs. Saturation currents followed a square law and current scaling constants were the highest on record for HJFETs, greater than 50 μA/μm-V2.
Urban mobile radio propagation at 900 MHz
- Author(s): M.F. Ibrahim and J.D. Parsons
- Source: Electronics Letters, Volume 18, Issue 3, p. 113 –115
- DOI: 10.1049/el:19820076
- Type: Article
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A series of field trials in London and Birmingham have been used to provide a propagation data base in urban areas at 900 MHz. Measured signal strengths are highly correlated with the results of earlier trials at lower frequencies. The excess loss over plane earth predictions varies with location but is generally in excess of 40 dB.
New high-voltage CMOS technology
- Author(s): N.D. Jankovic and R.S. Popovic
- Source: Electronics Letters, Volume 18, Issue 3, p. 115 –116
- DOI: 10.1049/el:19820077
- Type: Article
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A new high-voltage CMOS technology with operating range from 2 to 35 V is described. It is achieved using a new method of ohmic contact formation in combination with lightly doped n-channel source and drain MOS transistors. Only seven masking steps are required.
New method for measuring ultrawide frequency response of optical detectors
- Author(s): L. Piccari and P. Spano
- Source: Electronics Letters, Volume 18, Issue 3, p. 116 –118
- DOI: 10.1049/el:19820078
- Type: Article
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We propose a simple method which allows for a direct measure of the frequency response of photodetectors up to very high frequencies and avoids some of the problems inherent in the standard time-domain or frequency-domain measurements. This method is based on the detection of the tunable beat frequency obtained by superimposing the EM fields of two monomode semiconductor lasers.
Joint statistics of rain intensity in eight Italian locations for satellite communication networks
- Author(s): F. Barbaliscia and A. Paraboni
- Source: Electronics Letters, Volume 18, Issue 3, p. 118 –119
- DOI: 10.1049/el:19820079
- Type: Article
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–119
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The aim of the letter is to investigate the statistical dependence of rainfall intensity for pairs of stations separated by at least 20 km. Sixteen pairs of stations, with separations ranging from about 20 to 700 km, have been considered by analysing tipping-bucket raingauge data collected during an average period of two years. The analysis shows that the hypothesis of statistical independence cannot be assumed below 150–200 km, while more realistic results can be obtained with reasonably simple procedures.
Self-align implantation for n+-layer technology (SAINT) for high-speed GaAs ICs
- Author(s): K. Yamasaki ; K. Asai ; T. Mizutani ; K. Kurumada
- Source: Electronics Letters, Volume 18, Issue 3, p. 119 –121
- DOI: 10.1049/el:19820080
- Type: Article
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A new GaAs MESFET structure with n+-implanted layers and a self-aligned gate has been developed by dielectric lift-off technology with trilevel resist. The electrical characteristics are improved greatly by resistance reduction outside the channel under the gate. 280 mS/mm transconductance and 39.5 ps/gate propagation delay have been obtained.
Implementation of microprocessors in trellis decoding of convolutional codes
- Author(s): H.F. Rashvand
- Source: Electronics Letters, Volume 18, Issue 3, p. 121 –123
- DOI: 10.1049/el:19820081
- Type: Article
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The complexity of the digital circuit concerned with the trellis (Viterbi) decoder of a convolutional code is greater than other channel coding-decoding techniques, and it is recognised that the use of such a powerful coding-decoding technique in commercial data and voice communications systems is a serious problem. A prospective solution is to use a microprocessor system to combat the complexity of the system. A case study for implementing a common 8-bit microprocessor system is given; some results are presented and some space against speed trade-offs are discussed.
Stripe-geometry laser with in-situ ohmic contact and self-aligned native surface oxide mask for current isolation prepared by molecular beam epitaxy
- Author(s): W.T. Tsang ; R.A. Logan ; J.A. Ditzenberger
- Source: Electronics Letters, Volume 18, Issue 3, p. 123 –124
- DOI: 10.1049/el:19820082
- Type: Article
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A simple stripe-geometry laser is prepared by molecular beam epitaxy with an in-situ ohmic contact stripe and self-aligned native surface oxide mask for current isolation. The thresholds are about 70 mA for 5 μm-wide and 380 μm-long stripes. The light/current characteristics are linear up to ̃8–10 mW/mirror with a spontaneous emission level at threshold of ̃0.3 mW/mirror. The temperature coefficient T0 measured for one wafer is as high as 255 K.
High-stability measuring equipment for very small variations of optical-fibre loss
- Author(s): Y. Namihira ; H. Wakabayashi ; H. Yamamoto
- Source: Electronics Letters, Volume 18, Issue 3, p. 124 –126
- DOI: 10.1049/el:19820083
- Type: Article
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–126
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Measuring equipment for a very small variation in optical-fibre loss was developed. Long-term stability within ± 0.001 dB over a 5 h period has been achieved. A small loss variation of the optical single-mode fibre connector due to temperature change was measured.
Compensation for feed crosspolarisation in shaped dual offset reflectors
- Author(s): B.S. Westcott and F. Brickell
- Source: Electronics Letters, Volume 18, Issue 3, p. 126 –127
- DOI: 10.1049/el:19820084
- Type: Article
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–127
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A re-examination of the problems of shaping dual offset reflectors to produce a zero-crosspolarised parallel beam shows that the shaping can, under geometrical optics, compensate not only for the system asymmetry, but also for a certain amount of crosspolarisation in the feed pattern.
Simple design technique for inherently stable fan filters
- Author(s): R.A. King and A.H. Kayran
- Source: Electronics Letters, Volume 18, Issue 3, p. 127 –129
- DOI: 10.1049/el:19820085
- Type: Article
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–129
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The use of two-variable reactance functions for the design of fan filters is discussed. It is shown that this design approach is much simpler than those which require an optimisation process. The resulting filter is inherently stable and near optimal. An example is given to illustrate the effectiveness of the proposed method.
Dispersion effects using a 1.52 μm laser
- Author(s): D.A. Frisch and I.D. Henning
- Source: Electronics Letters, Volume 18, Issue 3, p. 129 –130
- DOI: 10.1049/el:19820086
- Type: Article
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–130
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The spectral behaviour of a buried crescent GaInAsP laser emitting at 1.52 μm was investigated. Under modulation conditions, partitioning between the lasing modes was observed. When the light was transmitted through 27 km of monomode fibre, jitter consistent with the partitioning was observed.
Experimental investigation of variation of backscattered power level with numerical aperture in multimode optical fibres
- Author(s): M. Eriksrud and A.R. Mickelson
- Source: Electronics Letters, Volume 18, Issue 3, p. 130 –132
- DOI: 10.1049/el:19820087
- Type: Article
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–132
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Experiments have been performed to determine how the backscattered power level varies with numerical aperture. It is found that graded-index fibres are more sensitive to such variations than step-index fibres. By taking into account the dependence of the Rayleigh scattering coefficient on numerical aperture, the experimental results agree well with theory.
Room temperature CW operation of GaInAsP/InP double heterostructure diode lasers emitting at 1.5 μm grown by low pressure metalorganic chemical vapour deposition (LP-MO CVD)
- Author(s): M. Razeghi ; P. Hirtz ; R. Blondeau ; J.P. Larivain ; L. Noel ; B. de Cremoux ; J.P. Duchemin
- Source: Electronics Letters, Volume 18, Issue 3, p. 132 –133
- DOI: 10.1049/el:19820088
- Type: Article
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Room temperature continuous wave (CW) operation at 1.5 μm has been achieved in GaInAsP/InP DH lasers fabricated on material grown by low-pressure metalorganic chemical vapour deposition (LP-MO CVD). Threshold currents as low as 200 mA DC have been measured for devices with a stripe width of 9 μm and a cavity length of 300 μm. Values of To as high as 64 K have been obtained, where To is defined by the expression Jth(T) = Jth(0) exp (T/To). Fundamental transverse mode oscillation has been achieved up to an output power of 10 mW.
Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode
- Author(s): Y. Awano ; K. Tomizawa ; N. Hashizume ; M. Kawashima
- Source: Electronics Letters, Volume 18, Issue 3, p. 133 –135
- DOI: 10.1049/el:19820089
- Type: Article
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Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0.36 eV. A maximum electron velocity of 1 × 108 cm s−1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.
Compensation tendency of short-channel and narrow-channel effects in small-geometry IGFETs
- Author(s): A.A. Naem and A.R. Boothroyd
- Source: Electronics Letters, Volume 18, Issue 3, p. 135 –136
- DOI: 10.1049/el:19820090
- Type: Article
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Results of an experimental investigation of the interaction between short-channel and narrow-channel effects in small-geometry (simultaneously short- and narrow-channel) devices are presented. It is demonstrated that, for these devices, this interaction can have a beneficial influence on device characteristics, being responsible for a drastic reduction of punch-through and avalanche multiplication effects, as well as the compensation of opposing threshold voltage shift tendencies.
Prediction of modal dispersion in single-mode fibres from spectral behaviour of mode spot size
- Author(s): P. Sansonetti
- Source: Electronics Letters, Volume 18, Issue 3, p. 136 –138
- DOI: 10.1049/el:19820091
- Type: Article
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–138
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We report a simple calculation allowing the prediction of the modal dispersion in single-mode optical fibres from the spectral behaviour of the mode spot size and the profile index.
Coaxial optical coupler
- Author(s): J.R. Cozens and A.C. Boucouvalas
- Source: Electronics Letters, Volume 18, Issue 3, p. 138 –140
- DOI: 10.1049/el:19820092
- Type: Article
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An optical coaxial dielectric directional coupler is described. The results of numerical calculations are given for the design of phase matched guides, beat lengths, fabrication tolerances and switching sensitivities.
Optical coupler for laser redundancy system
- Author(s): R. Kishimoto
- Source: Electronics Letters, Volume 18, Issue 3, p. 140 –141
- DOI: 10.1049/el:19820093
- Type: Article
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Experimental results are described for a new optical coupler, which consists of two laser diodes, two GRIN spherical rod lenses, a polarised filter and a single-mode fibre, and employs laser diode polarisation characteristics for an optical submarine transmission laser redundancy system. This optical coupler has two channels at a 1.3 μm wavelength. Optical coupler loss, which includes coupling loss, polarisation loss and assembly loss, is 4.9 dB for laser diode 1, and 5.2 dB for laser diode 2.
Mobile propagation in London at 936 MHz
- Author(s): K.A. Hughes
- Source: Electronics Letters, Volume 18, Issue 3, p. 141 –143
- DOI: 10.1049/el:19820094
- Type: Article
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Propagation experiments between two vehicles at 936 MHz show communication ranges between about 2 and 5 km in inner London and around 5 km in outlying areas for an ERP of 25 W. The attenuation rate agrees closely with that governed by plane-earth propagation but received signal levels depend heavily on the distribution and heights of local buildings.
Improved whisker pointing technique for micron-size diode contact
- Author(s): R.J. Mattauch and G. Green
- Source: Electronics Letters, Volume 18, Issue 3, p. 143 –144
- DOI: 10.1049/el:19820095
- Type: Article
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Pointed phosphor-bronze whiskers are commonly used to contact micron-size Schottky barrier diodes. A process is presented which allows pointing such wire and achieving the desired cone angle and tip diameter without the use of highly undesirable chemical reagents.
Novel variable-frequency oscillator with single resistor control using DVCCS/DVCVS
- Author(s): R. Nandi
- Source: Electronics Letters, Volume 18, Issue 3, p. 144 –145
- DOI: 10.1049/el:19820096
- Type: Article
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A variable-frequency sinewave RC-oscillator configuration using the DVCCS/DVCVS active element is proposed. The realisation is novel as only one resistor and two capacitors are required in the circuit and independent resistor control of ω0 is possible at low active and passive sensitivities.
Novel grounded-capacitor ideal FDNR and oscillator using current conveyors
- Author(s): R. Nandi
- Source: Electronics Letters, Volume 18, Issue 3, p. 145 –146
- DOI: 10.1049/el:19820097
- Type: Article
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This communication describes the realisation of an ideal frequency-dependent negative-resistance (FDNR) element using the second generation current conveyor (CC II), and its application as a sinewave oscillator with single-grounded-resistor control. The realisation is novel because of the use of a minimum number of passive components with equal-valued grounded capacitors and low active ω0-sensitivity.
Memory based transforms
- Author(s): P.J. Langlois
- Source: Electronics Letters, Volume 18, Issue 3, p. 146 –147
- DOI: 10.1049/el:19820098
- Type: Article
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A method, making extensive use of ROMs, for the generation of transforms is presented.
High-speed processing of serial input logic data
- Author(s): P.D. Picton
- Source: Electronics Letters, Volume 18, Issue 3, p. 148 –149
- DOI: 10.1049/el:19820099
- Type: Article
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A method is presented which enables the synthesis of a serial input logic processor to be obtained quickly and simply. The synthesis gives a solution which uses modules previously used in the design of general synchronous systems.
Comment: Low-noise state-space realisation of bandpass active filter
- Author(s): P.E. Fleischer ; A. Ganesan ; J. Tow
- Source: Electronics Letters, Volume 18, Issue 3, p. 149 –150
- DOI: 10.1049/el:19820100
- Type: Article
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Reply: Low-noise state-space realisation of bandpass active filter
- Author(s): E.J.P. May and H.H. Mehdi
- Source: Electronics Letters, Volume 18, Issue 3, page: 150 –150
- DOI: 10.1049/el:19820101
- Type: Article
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Erratum: Phase-plane analysis of simple Josephson junction model
- Author(s): V. Dvorak
- Source: Electronics Letters, Volume 18, Issue 3, page: 150 –150
- DOI: 10.1049/el:19820102
- Type: Article
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Erratum: Discrete time MRAS with reduced implementation complexity
- Author(s): Abdul Adhem Abdul Karim ; R. Nagarajan ; K.B. Mirza
- Source: Electronics Letters, Volume 18, Issue 3, page: 150 –150
- DOI: 10.1049/el:19820103
- Type: Article
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Erratum: Numerical analysis of two-dimensional piezoelectric waveguides for surface acoustic waves by finite-element method
- Author(s): M. Koshiba ; M. Okada ; M. Suzuki
- Source: Electronics Letters, Volume 18, Issue 3, page: 150 –150
- DOI: 10.1049/el:19820104
- Type: Article
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