Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 2, 21 January 1982
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 18, Issue 2
21 January 1982
Effect of source near- and far-field variations on the accuracy of multimode fibre attenuation measurements
- Author(s): A.B. Sharma ; S.J. Halme ; E.J.R. Hubach ; M. Lähteenoja
- Source: Electronics Letters, Volume 18, Issue 2, p. 49 –50
- DOI: 10.1049/el:19820034
- Type: Article
- + Show details - Hide details
-
p.
49
–50
(2)
The error incurred in fibre attenuation measurements due to variations in the launch near- and far-fields is examined for a statistically uniform near field and a cosp θ far field. It is found that even under well controlled conditions, spatial and wavelength variations could easily lead to interlaboratory errors in excess of ± 0.03 dB.
Identification of continuous-time state-space model from samples of input-output data
- Author(s): Zhou Qi-Jie and N.K. Sinha
- Source: Electronics Letters, Volume 18, Issue 2, p. 50 –51
- DOI: 10.1049/el:19820035
- Type: Article
- + Show details - Hide details
-
p.
50
–51
(2)
The identification of the parameters of a state-space model for a single-input single-output system from samples of the input-output data is considered. Use of the trapezoidal rule of integration, together with the least-squares algorithm, leads to the continuous-time model directly without assuming that the input is held constant between sampling instants.
Comparison of a one- and a two-frequency technique for frequency scaling of rain attenuation statistics
- Author(s): H.N. Kheirallah and R.L. Olsen
- Source: Electronics Letters, Volume 18, Issue 2, p. 51 –53
- DOI: 10.1049/el:19820036
- Type: Article
- + Show details - Hide details
-
p.
51
–53
(3)
The theory underlying Hogg's technique for the frequency scaling of rain attenuation statistics at two frequencies is presented, and the inherent approximations given. The technique is compared theoretically and numerically with a new method for scaling single frequency statistics recently proposed by the authors.
Threshold voltage of ion implanted GaAs MESFET
- Author(s): T. Mizutani ; S. Ishida ; T. Honda ; Y. Kawasaki
- Source: Electronics Letters, Volume 18, Issue 2, p. 53 –54
- DOI: 10.1049/el:19820037
- Type: Article
- + Show details - Hide details
-
p.
53
–54
(2)
Threshold voltages for ion implanted GaAs MESFETs are measured and shown to have good coincidence with calculated results. The effect of implantation energy on threshold voltage is discussed. The optimum implantation energy is about 45 ∼ 60 keV.
Experimental observation of asymmetric detuning characteristics in semiconductor laser injection locking
- Author(s): K. Kobayashi ; H. Nishimoto ; R. Lang
- Source: Electronics Letters, Volume 18, Issue 2, p. 54 –56
- DOI: 10.1049/el:19820038
- Type: Article
- + Show details - Hide details
-
p.
54
–56
(3)
The effects of refractive index dependence on the active region carrier density in semiconductor laser injection locking have been examined experimentally. Strong asymmetry has been observed in the relation between locked longitudinal mode intensity and the difference between an original longitudinal mode wavelength and the injecting light wavelength.
Technique for minimising effect of detector inhomogeneity on fibre attenuation measurements
- Author(s): A.B. Sharma ; E.J.R. Hubach ; M. Lähteenoja ; S.J. Halme
- Source: Electronics Letters, Volume 18, Issue 2, p. 56 –57
- DOI: 10.1049/el:19820039
- Type: Article
- + Show details - Hide details
-
p.
56
–57
(2)
In fibre attenuation measurements by the ‘cut-back’ method, the necessity for a homogeneous detector is implicit. We have found a commonly used germanium detector to be significantly inhomogeneous, leading to an estimated attenuation discrepancy of 0.02 dB at best and 0.4 dB at worst. In the letter, we outline a method for reducing this discrepancy to levels of less than 0.004 dB.
Ion beam annealed As+ implanted silicon
- Author(s): P.L.F. Hemment ; E. Maydell-Ondrusz ; P.D. Scovell
- Source: Electronics Letters, Volume 18, Issue 2, p. 57 –59
- DOI: 10.1049/el:19820040
- Type: Article
- + Show details - Hide details
-
p.
57
–59
(3)
As+ and Ar+ ion beams have been used to anneal silicon implanted with 6 × 1015 As+/cm2 at 170 keV. Samples were annealed by (i) Ar+ incident on the back face or (ii) direct heating by the dopant ions. Those annealed by (i) exhibited good crystallinity, a low sheet resistivity of 24.0 ± 0 1Ω/□ and no measurable change in the arsenic distribution.
Hybrid electro-optical multivibrator operating by finite feedback delay
- Author(s): A. Neyer and E. Voges
- Source: Electronics Letters, Volume 18, Issue 2, p. 59 –60
- DOI: 10.1049/el:19820041
- Type: Article
- + Show details - Hide details
-
p.
59
–60
(2)
A new type of hybrid electro-optical multivibrator is investigated. The operation principle is based on the finite delay time of the feedback circuit and the nonlinear characteristic of the light modulator. The system is analysed by a diagram technique and realised experimentally by using an integrated interferometer modulator.
Fast integration techniques for reflector antenna pattern analysis
- Author(s): A.D. Craig and P.D. Simms
- Source: Electronics Letters, Volume 18, Issue 2, p. 60 –62
- DOI: 10.1049/el:19820042
- Type: Article
- + Show details - Hide details
-
p.
60
–62
(3)
The letter describes the application of fast integration techniques, based on the FFT algorithm, to the evaluation of the far-field radiation integral for aperture plane, surface electric current and surface magnetic current theory. Results are presented comparing patterns derived by these three theoretical approaches.
Optically pumped laser action at 77 K of InGaP/InGaAlP double heterostructures grown by MBE
- Author(s): H. Asahi ; Y. Kawamura ; H. Nagai ; T. Ikegami
- Source: Electronics Letters, Volume 18, Issue 2, p. 62 –63
- DOI: 10.1049/el:19820043
- Type: Article
- + Show details - Hide details
-
p.
62
–63
(2)
Optically pumped laser action at a wavelength of 0.63 μm has been achieved at 77 K in InGaP/InGaAlP double heterostructures grown on (100) GaAs substrates by molecular beam epitaxy. The threshold pump power density was about 2.5 × 103 W/cm2
Anodic oxide film as gate insulator for InP MOSFETs
- Author(s): A. Yamamoto and C. Uemura
- Source: Electronics Letters, Volume 18, Issue 2, p. 63 –64
- DOI: 10.1049/el:19820044
- Type: Article
- + Show details - Hide details
-
p.
63
–64
(2)
An anodic oxide film of InP, which had an interface state density of ≲ 1011 cm−2 eV−1 near midgap and worked well as the gate insulator for InP MOSFETs, was obtained by optimising its preparation conditions. The excellence of the anodic oxide as a gate insulator was confirmed by a high electron effective mobility (1500 cm2/Vs) in the accumulation-mode InP MOSFETs.
Noise, responsivity and prospects for long-term stability of silicon reach-through avalanche photodiodes
- Author(s): M.C. Brain
- Source: Electronics Letters, Volume 18, Issue 2, p. 65 –66
- DOI: 10.1049/el:19820045
- Type: Article
- + Show details - Hide details
-
p.
65
–66
(2)
Approximately 100 silicon reach-through avalanche photo-diodes of three different types have been characterised for the dependence of noise and responsivity on bias voltage, to indicate margins to be allowed for variations between devices in optical systems operating at 0.85 μm wavelength. Long-term stability measurements reveal a correlation between reliability and production batch.
Novel switched-capacitor pseudo-N-path filter
- Author(s): U. Kleine and J. Pandel
- Source: Electronics Letters, Volume 18, Issue 2, p. 66 –68
- DOI: 10.1049/el:19820046
- Type: Article
- + Show details - Hide details
-
p.
66
–68
(3)
The letter presents novel fully stray-insensitive switched-capacitor (SC) pseudo-N-path filters based on the theory of wave-flow networks. N-path filters are well suited for the realisation of narrowband bandpass and bandreject filters. The two main drawbacks of N-path filters, i.e. unwanted mirror frequencies due to path mismatch, and clock feedthrough located in the passband, are overcome by applying the pseudo-N-path principle. The design procedure will be demonstrated using an example of a 6-path filter based on a 3rd-order highpass prototype filter.
Benchmark synchronisation of m-sequences
- Author(s): R. Yarlagadda and J.E. Hershey
- Source: Electronics Letters, Volume 18, Issue 2, p. 68 –69
- DOI: 10.1049/el:19820047
- Type: Article
- + Show details - Hide details
-
p.
68
–69
(2)
We have discovered a new method for synchronising m-sequences that is invariant over all primitive polynomials of degree n. The special filters required are presented in an efficient, recursive architecture.
Optogalvanic stabilisation of a CO2 laser with an electrodynamic tuning element
- Author(s): J. Jirmann and W. Dürr
- Source: Electronics Letters, Volume 18, Issue 2, p. 69 –71
- DOI: 10.1049/el:19820048
- Type: Article
- + Show details - Hide details
-
p.
69
–71
(3)
The design of an electrodynamic tuning element and its application in a CO2 laser is described. The element is built along the principle of an electrodynamic loudspeaker. It is preferable to the widely used PZT element, particularly at longer wavelength, since it can provide a much larger displacement range.
Microlens formation on VAD single-mode fibre ends
- Author(s): M. Kawachi ; T. Edahiro ; H. Toba
- Source: Electronics Letters, Volume 18, Issue 2, p. 71 –72
- DOI: 10.1049/el:19820049
- Type: Article
- + Show details - Hide details
-
p.
71
–72
(2)
The letter describes microlens formation process on VAD single-mode fibre ends by a chemical-etching/fire-polishing technique. No central dip in the VAD fibres leads to high-quality lens formation.
Monolithic integration of optoelectronic, electronic and passive components in GaAlAs/GaAs multilayers
- Author(s): A.C. Carter ; N. Forbes ; R.C. Goodfellow
- Source: Electronics Letters, Volume 18, Issue 2, p. 72 –74
- DOI: 10.1049/el:19820050
- Type: Article
- + Show details - Hide details
-
p.
72
–74
(3)
The monolithic integration of LEDs, detectors, waveguides, resistors and FETs has been demonstrated in GaAlAs/GaAs multilayer structures. The resulting uncommitted optoelectronic integrated circuits have been operated in transmitter, receiver and repeater configurations.
Enhanced low temperature diffusion of electron-beam evaporated aluminium into SiO2 thin films
- Author(s): H.F. Ragaie
- Source: Electronics Letters, Volume 18, Issue 2, p. 74 –75
- DOI: 10.1049/el:19820051
- Type: Article
- + Show details - Hide details
-
p.
74
–75
(2)
Aluminium-gate MOS capacitors are annealed at low temperatures. The consequent aluminium penetration into the underlying oxide is revealed by ion probing. Results indicate that penetration is enhanced when the aluminium is evaporated using an electron beam.
Hole traps in n-type Ga1−xAlxAs grown by organometallic vapour phase epitaxy
- Author(s): R.H. Wu ; D. Allsopp ; A.R. Peaker
- Source: Electronics Letters, Volume 18, Issue 2, p. 75 –77
- DOI: 10.1049/el:19820052
- Type: Article
- + Show details - Hide details
-
p.
75
–77
(3)
Minority carrier traps in n-type Ga1−xAlxAs (x = 0.25 and 0.30) grown by the organometallic vapour phase epitaxy process have been investigated by minority carrier transient spectroscopy (MCTS). Hole traps with thermal activation energies of Ev + 0.35 and 0.48 eV and a deeper centre have been observed in GaAs and at Ev + 0.20, 0.26, 0.44 and 0.78 in GaAlAs. The electron and hole capture cross-sections of these centres have also been measured.
Low-threshold-current distributed-feedback InGaAsP/InP CW lasers
- Author(s): S. Akiba ; K. Utaka ; K. Sakai ; Y. Matsushima
- Source: Electronics Letters, Volume 18, Issue 2, p. 77 –78
- DOI: 10.1049/el:19820053
- Type: Article
- + Show details - Hide details
-
p.
77
–78
(2)
Distributed-feedback buried-heterostructure InGaAsP/InP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2.3 kA/cm2, are presented. CW operation in the temperature range from −20°C to 58°C was confirmed.
Reduction of loss due to OH in optical fibres by a two-step OH → OD exchange process
- Author(s): J. Stone and P.J. Lemaire
- Source: Electronics Letters, Volume 18, Issue 2, p. 78 –80
- DOI: 10.1049/el:19820054
- Type: Article
- + Show details - Hide details
-
p.
78
–80
(3)
An isotopic exchange process is used to convert the OH in optical fibre preforms into OD. The OH first overtone absorption is reduced from 80 dB/km to 1.5 dB/km. The OD second overtone absorption at 1.26 μm is less than 0.5 dB/km.
Narrow-aperture chirp transducers for SAW convolvers
- Author(s): D.P. Morgan ; D.H. Warne ; D.R. Selviah
- Source: Electronics Letters, Volume 18, Issue 2, p. 80 –81
- DOI: 10.1049/el:19820055
- Type: Article
- + Show details - Hide details
-
p.
80
–81
(2)
Narrow-aperture SAW beams can be generated efficiently using chirp transducers, thus avoiding the need for beam compression in convolvers. The transducers can be designed such as to compensate for phase errors due to dispersive SAW propagation. Experimental confirmation was obtained using convolvers with 120 MHz bandwidth and 16 μs interaction length, and a bilinearity factor of −65 dBm was achieved.
Results of XPD site-diversity measurements at 11.8 GHz
- Author(s): J.R. Larsen
- Source: Electronics Letters, Volume 18, Issue 2, p. 81 –82
- DOI: 10.1049/el:19820056
- Type: Article
- + Show details - Hide details
-
p.
81
–82
(2)
The re-use of frequencies in the coming satellite telecommunications systems by means of orthogonal polarisations is based on the knowledge of the values of crosspolarisation discrimination (XPD) which are to be expected. The letter gives results of about one year's measurements of the improvement in XPD due to site diversity.
Fusion splicing of a 31.6 km monomode optical fibre system
- Author(s): D.B. Payne ; D.J. McCartney ; P. Healey
- Source: Electronics Letters, Volume 18, Issue 2, p. 82 –84
- DOI: 10.1049/el:19820057
- Type: Article
- + Show details - Hide details
-
p.
82
–84
(3)
The fusion splicing of a 14-fibre, 31.6 km-cabled, monomode optical fibre system, with a mean splice loss of 0.18 dB at λ = 1.3 μm and 0.12 dB at λ = 1.55 μm, is reported.
Length dependence of joint losses in multimode optical fibres
- Author(s): G. Coppa and P. di Vita
- Source: Electronics Letters, Volume 18, Issue 2, p. 84 –85
- DOI: 10.1049/el:19820058
- Type: Article
- + Show details - Hide details
-
p.
84
–85
(2)
The dependence of actual joint losses on fibre length is studied in some common cases. Interesting relations with scattering loss are found and a strong dependence on launching conditions is evidenced.
Tunnelling through GaAs-AlxGa1−xAs-GaAs double heterojunctions
- Author(s): D. Delagebeaudeuf ; P. Delescluse ; P. Etienne ; J. Massies ; M. Laviron ; J. Chaplart ; T. Linh
- Source: Electronics Letters, Volume 18, Issue 2, p. 85 –87
- DOI: 10.1049/el:19820059
- Type: Article
- + Show details - Hide details
-
p.
85
–87
(3)
GaAs-Al0.5Ga0.5As-GaAs tunnel diodes have been achieved. Tunnel currents have been measured and compared to theoretical calculations based on WKB approximation.
Designing single-mode fibres for near-IR(1.1–1.7 μm) frequency generation by phase-matched four-photon mixing in the minimum chromatic dispersion region
- Author(s): Chinlon Lin ; W.A. Reed ; A.D. Pearson ; Hen-Tai Shang ; P.F. Glodis
- Source: Electronics Letters, Volume 18, Issue 2, p. 87 –89
- DOI: 10.1049/el:19820060
- Type: Article
- + Show details - Hide details
-
p.
87
–89
(3)
We describe single-mode fibre design for tailoring the frequency shift at phase matching in stimulated four-photon mixing, and demonstrate near-IR (1.1–1.7 μm) frequency generation in these single-mode silica fibres pumped near the minimum chromatic dispersion region. By controlling the waveguide dispersion's contribution to phase matching, desired frequency shifts in the 100 to 1800 cm−1 range are obtained in a series of GeO2-doped silica single-mode fibres pumped with Nd:YAG laser pulses at 1.319 μm, when the fibres have an Δn of ∼0.0047 and core diameters varying from 8.4 to 7.2 μm.
Birefringence in elliptical-cladding single-polarisation fibres
- Author(s): Y. Namihira ; Y. Ejiri ; K. Mochizuki
- Source: Electronics Letters, Volume 18, Issue 2, p. 89 –91
- DOI: 10.1049/el:19820061
- Type: Article
- + Show details - Hide details
-
p.
89
–91
(3)
Birefringence characteristics of elliptical cladding fibres have been investigated by stress analysis using the three-dimensional finite-element method (FEM). The stress induced birefringence is found to increase linearly with increasing cladding ellipticity and expansion coefficient of elliptical cladding.
MBE-grown InGaAs/InP BH lasers with LPE burying layers
- Author(s): Y. Kawamura ; Y. Noguchi ; H. Asahi ; H. Nagai
- Source: Electronics Letters, Volume 18, Issue 2, p. 91 –92
- DOI: 10.1049/el:19820062
- Type: Article
- + Show details - Hide details
-
p.
91
–92
(2)
CW operation at up to 60°C at 1.65 μm has been achieved in MBE-grown InGaAs/InP buried-heterostructure lasers with LPE InP burying layers. Threshold current was as low as 35 mA at room temperature. No degradation was observed after 2800 h CW operation at room temperature.
Differential phase contrast in the acoustic microscope
- Author(s): I.R. Smith and H.K. Wickramasinghe
- Source: Electronics Letters, Volume 18, Issue 2, p. 92 –94
- DOI: 10.1049/el:19820063
- Type: Article
- + Show details - Hide details
-
p.
92
–94
(3)
A differential phase contrast acoustic microscope is described which compares the responses of adjacent points on the specimen. The improved stability of this measurement permits extended integration periods. Thus we anticipate sensitive measurements of acoustic velocity distributions with the high spatial resolution of the acoustic microscope.
Comparison of modal analysis and equivalent circuit representation of E-plane arm of the jerusalem cross
- Author(s): S.M.A. Hamdy and E.A. Parker
- Source: Electronics Letters, Volume 18, Issue 2, p. 94 –95
- DOI: 10.1049/el:19820064
- Type: Article
- + Show details - Hide details
-
p.
94
–95
(2)
Transmission coefficients predicted by modal analysis agree well with measurements, but an LC equivalent circuit gives satisfactory results for normal incidence only. The two methods predict similar phases for the induced currents. The modal method's account of the current distribution is illustrated for two resonant frequencies in the E-plane.
Active R multifunction circuit synthesis
- Author(s): Y. Venkataramani and S. Venkateswaran
- Source: Electronics Letters, Volume 18, Issue 2, p. 96 –97
- DOI: 10.1049/el:19820065
- Type: Article
- + Show details - Hide details
-
p.
96
–97
(2)
A synthesis technique for an active R multifunction circuit is presented. The realised circuit provides inverting bandpass, noninverting lowpass, allpass, band elimination and oscillator functions. With polarities of both the operational amplifiers (OAs) reversed, noninverting bandpass, noninvertig lowpass and oscillator functions are realised. The circuit has been analysed, based on a simplified pole-zero model for the OAs.
Silicon solar cells with reduced temperature sensitivity
- Author(s): M.A. Green ; K. Emery ; A.W. Blakers
- Source: Electronics Letters, Volume 18, Issue 2, p. 97 –98
- DOI: 10.1049/el:19820066
- Type: Article
- + Show details - Hide details
-
p.
97
–98
(2)
As the open-circuit voltage of silicon solar cells continues to improve, one resulting advantage, not Widely appreciated, is reduced temperature sensitivity of device performance. Recently a new type of silicon solar cell has been described which has resulted in a significant increase in open circuit voltage. Experimental results are described for these devices which demonstrate the lowest temperature sensitivity ever reported for silicon cells under unconcentrated sunlight. With further improvements in voltage, it should be possible to approach the relative temperature insensitivity of some high performance GaAs devices.
1.55 μm optical transmission experiments at 2 Gbit/s using 51.5 km dispersion-free fibre
- Author(s): J. Yamada ; A. Kawana ; H. Nagai ; T. Kimura ; T. Miya
- Source: Electronics Letters, Volume 18, Issue 2, p. 98 –100
- DOI: 10.1049/el:19820067
- Type: Article
- + Show details - Hide details
-
p.
98
–100
(3)
The high sensitivity of a Ge APD optical receiver, and dispersion-free fibres at a minimum loss wavelength of 1.55 μm, made it possible to achieve 51.5 km optical signal transmission at 2 Gbit/s. The optical receiving level was −31.4 dBm at a 10−9 error rate, and the degradation caused by fibre dispersion was only 0.6 dB. A data-rate repeater-spacing product of 103 (Gbit/s)km was achieved at 1.55 μm.
Excitation-dependent material dispersion in graded-index fibres
- Author(s): K.-F. Klein ; W.E. Heinlein ; K.-H. Witte
- Source: Electronics Letters, Volume 18, Issue 2, p. 100 –102
- DOI: 10.1049/el:19820068
- Type: Article
- + Show details - Hide details
-
p.
100
–102
(3)
A narrow pulsed Gaussian beam of wavelength between 1.06 μm and 1.6 μm is used to excite selectively a graded-index fibre in order to measure the spectral behaviour of the resulting pulse delay. This measurement demonstrates the excitation-dependent material dispersion in multimode fibres. Comparisons of experimental results with calculations based on certain published bulk material data show reasonable agreement.
N-channel MISFETs on semi-insulating InP for logic applications
- Author(s): L. Henry ; D. Lecrosnier ; H. L'Haridon ; J. Paugham ; G. Pelous ; F. Richou ; M. Salvi
- Source: Electronics Letters, Volume 18, Issue 2, p. 102 –103
- DOI: 10.1049/el:19820069
- Type: Article
- + Show details - Hide details
-
p.
102
–103
(2)
N-channel enhancement and depletion mode MISFETs have been fabricated on the same Fe-doped semi-insulating wafer. Their electrical characteristics are reported, along with some comparison with MISFETs processed on a silicon substrate with the same mark set.
Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential
- Author(s): D. Delagebeaudeuf ; M. Laviron ; P. Delescluse ; Pham N. Tung ; J. Chaplart ; Nuyen T. Linh
- Source: Electronics Letters, Volume 18, Issue 2, p. 103 –105
- DOI: 10.1049/el:19820070
- Type: Article
- + Show details - Hide details
-
p.
103
–105
(3)
Planar enhancement mode two-dimensional electron gas FETs (TEGFETs) are described. Certain aspects of their high performances are interpreted as being due to the low surface potential (0.33 eV) of the AlGaAs uppermost layer.
Cascade synthesis of a class of mixed lumped-distributed networks
- Author(s): H. Baher
- Source: Electronics Letters, Volume 18, Issue 2, p. 105 –106
- DOI: 10.1049/el:19820071
- Type: Article
- + Show details - Hide details
-
p.
105
–106
(2)
The necessary and sufficient conditions are given for a three-variable impedance function to be realisable as a resistor-terminated cascade, composed of passive lumped lossless two-ports, lowpass commensurate stubs and commensurate unit elements. The stubs are noncommensurate relative to the unit elements.
Erratum: Reduction of FM noise in impatt oscillators by optical illumination
- Author(s): A.J. Seeds and J.R. Forrest
- Source: Electronics Letters, Volume 18, Issue 2, page: 106 –106
- DOI: 10.1049/el:19820072
- Type: Article
- + Show details - Hide details
-
p.
106
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article