Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 25-26, 9 December 1982
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Volume 18, Issue 25
9 December 1982
Semiconductor surface studies with SAW-oscillator structures
- Author(s): R. Rademeyer ; B. Davari ; P. Das
- Source: Electronics Letters, Volume 18, Issue 25, p. 1065 –1066
- DOI: 10.1049/el:19820729
- Type: Article
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A new method is described whereby the surface charge against surface potential of an oxidised semiconductor sample can be obtained by measuring the frequency shift of a SAW delay-line oscillator. In this method a direct voltage is applied across the semiconductor with different configurations. The SAW delay line is made on LiNbO3 and is designed to oscillate (at 100 MHz) with a wideband amplifier in a feedback configuration.
Diode-laser-controlled millimetre-wave propagation in a silicon waveguide
- Author(s): Aileen M. Vaucher ; Ming G. Li ; Chi H. Lee
- Source: Electronics Letters, Volume 18, Issue 25, p. 1066 –1067
- DOI: 10.1049/el:19820730
- Type: Article
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We report the dynamic behaviour of the phase shift and attenuation of millimetre waves in a silicon waveguide when it is illuminated by a diode laser. The effect of diffusion of the induced plasma on the phase shift and attenuation is also described.
Monte Carlo simulation of GaAs submicron n+-n-n+ diode with GaAlAs heterojunction cathode
- Author(s): K. Tomizawa ; Y. Awano ; N. Hashizume ; F. Suzuki
- Source: Electronics Letters, Volume 18, Issue 25, p. 1067 –1069
- DOI: 10.1049/el:19820731
- Type: Article
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A Monte Carlo simulation program has been developed to simulate the motion of electrons in a submicron GaAs diode with a Ga1−xAlxAs heterojunction cathode. It is shown that the hot electron injection through the heterojunction cathode is effective to increase the mean electron velocity of carriers.
Multidimensional bilinear transformations
- Author(s): Soo-Chang Pei
- Source: Electronics Letters, Volume 18, Issue 25, p. 1069 –1070
- DOI: 10.1049/el:19820732
- Type: Article
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The bilinear transformation is extended to transform multi-variable polynomials, using discrete convolution and the Kronecker product. This approach is very simple, easy for computer implementation, and useful in complex curve fitting and stability studies of discrete systems and the design of digital filters etc.
Outage prediction of digital radio systems
- Author(s): J.C. Campbell and R.P. Coutts
- Source: Electronics Letters, Volume 18, Issue 25, p. 1071 –1072
- DOI: 10.1049/el:19820733
- Type: Article
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It is well established that the performance of digital radio systems is often limited by the amplitude and group delay distortions which accompany frequency selective fading, and the concept of the ‘system signature’ has been developed for predicting the outage probability of such systems. The letter presents a new outage prediction technique and introduces the concept of a ‘normalised system signature’ which enables comparisons of modulation schemes and equaliser implementations.
Proposed use of rearrangement in multiexchange telecommunication networks
- Author(s): J.E. Flood
- Source: Electronics Letters, Volume 18, Issue 25, p. 1072 –1073
- DOI: 10.1049/el:19820734
- Type: Article
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Rearrangement of connections can eliminate blocking in switching networks in exchanges. It is proposed to apply this principle to trunks in multiexchange networks. It is shown for two simple networks that rearrangement eliminates blocking and provides a better grade of service than conventional automatic alternative routing. In more complex networks, rearrangement should enable fewer trunks to be provided.
Analytical and simulation study of simple rearrangeable multiexchange networks
- Author(s): A.K.M.M. Rahman Khan
- Source: Electronics Letters, Volume 18, Issue 25, p. 1073 –1075
- DOI: 10.1049/el:19820735
- Type: Article
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Congestion probabilities for calls in simple three-exchange networks operated with and without rearrangements are determined analytically and by digital simulation. Load-loss curves are obtained, from which the gain in traffic capacity due to rearrangement and degradation due to overload can be found. It is concluded that routing control with rearrangements possesses a potential traffic-handling advantage over conventional automatic alternative routing.
Changes in photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes induced by forward bias carrier injection
- Author(s): I. Sakata and Y. Hayashi
- Source: Electronics Letters, Volume 18, Issue 25, p. 1075 –1076
- DOI: 10.1049/el:19820736
- Type: Article
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The photovoltaic and dark electrical properties of hydrogenated amorphous silicon diodes were changed by forward bias carrier injection for several hours. These changes were similar to photoinduced (PI) changes previously reported, and this result supports previous explanations for PI changes. The differences between these two types of change are also discussed.
High-mobility selectively doped GaAs/GaAlAs structures grown by low-pressure OM-VPE
- Author(s): S.D. Hersee ; J.P. Hirtz ; M. Baldy ; J.P. Duchemin
- Source: Electronics Letters, Volume 18, Issue 25, p. 1076 –1078
- DOI: 10.1049/el:19820737
- Type: Article
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We report the growth of high-quality selectively doped GaAs/GaAlAs heterostructures grown by OM-VPE. Electron mobilities as high as 162000 cm2V−1s−1 have been obtained at 2 K. The sheet carrier concentration was varied between 5 × 1011 cm−2 and 1.5 × 1012 cm−2 by changing the ‘spacer’ thickness and the doping level in the n-type GaAlAs.
Electronic erasure of stored reference signals in a metal-ZnO-SiO2-Si induced junction storage correlator
- Author(s): K.C.-K. Weng ; R.L. Gunshor ; R.F. Pierret ; K. Tsubouchi
- Source: Electronics Letters, Volume 18, Issue 25, p. 1078 –1080
- DOI: 10.1049/el:19820738
- Type: Article
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–1080
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The surface-acoustic-wave storage correlator is used to store a reference signal for subsequent correlation with an unknown signal. We describe and demonstrate a method for the electronic erasure of stored signals in the context of the MZOS-induced junction storage correlator.
Novel active-compensated variable-phase inverting integrator
- Author(s): M.V. Popovich and O. Katić
- Source: Electronics Letters, Volume 18, Issue 25, p. 1080 –1081
- DOI: 10.1049/el:19820739
- Type: Article
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A novel variable-phase inverting integrator is presented. Compared to some existing circuits, the circuit proposed has better high-frequency behaviour because it does not require the use of identical amplifiers. This integrator can considerably extend the useful frequency range of the two-integrator-loop and multiple-feedback active filters, reducing excess phase shift of the operational amplifiers.
Pseudoheterodyne detection scheme for optical interferometers
- Author(s): D.A. Jackson ; A.D. Kersey ; M. Corke ; J.D.C. Jones
- Source: Electronics Letters, Volume 18, Issue 25, p. 1081 –1083
- DOI: 10.1049/el:19820740
- Type: Article
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A heterodyne signal recovery scheme for interferometric sensors based on frequency ramping of the laser diode source is described. Using a PLL detector, signals in the range 10−4 to 6 rad have been recovered, the system being linear over 5 decades.
Contact resistance of polysilicon silicon interconnections
- Author(s): G.K. Reeves and H.B. Harrison
- Source: Electronics Letters, Volume 18, Issue 25, p. 1083 –1085
- DOI: 10.1049/el:19820741
- Type: Article
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Electrical contacts to poly are an important part of current silicon technology. In this letter we present a method of calculating the electrical characteristics for a planar poly to silicon contact. An interesting and significant result that is derived and discussed is a minimum contact resistance that is a strong function not only of the specific contact resistance of the contact interface but also of the contact geometry.
T-emitter bipolar power transistor with negative-temperature-gradient current gain
- Author(s): N.D. Janković
- Source: Electronics Letters, Volume 18, Issue 25, p. 1085 –1087
- DOI: 10.1049/el:19820742
- Type: Article
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A PNP epitaxial-base power transistor with double diffused emitter (T-emitter) which exhibits a negative temperature gradient for β is described. Qualitative analysis shows that a fall-off in β with increase in temperature is a consequence of both the T-emitter geometry and the boron double diffused emitter area. Measurements on realised transistors give a mean value of dβ/dt of −0.25 at temperatures ranging from 20°C to 110°C.
High-Q SC biquad with a minimum capacitor spread
- Author(s): G. Fischer and G.S. Moschytz
- Source: Electronics Letters, Volume 18, Issue 25, p. 1087 –1089
- DOI: 10.1049/el:19820743
- Type: Article
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Realising SC biquads with high Q values normally results in a high capacitor spread. This means, for MOS circuits, a correspondingly large increase of the total chip area. In the letter, we describe a circuit that allows the realisation of high-Q filters with a minimum capacitor spread resulting in more accurate capacitor ratios and a small overall chip area.
Novel technique for antenna gain measurement in satellite Earth stations
- Author(s): P. Daly and D. Tits
- Source: Electronics Letters, Volume 18, Issue 25, p. 1089 –1090
- DOI: 10.1049/el:19820744
- Type: Article
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A novel technique is proposed for the measurement of the gain of antennas used in Earth stations involved in satellite communications. In principle the technique requires a standard-gain reference antenna, automatic level control over a satellite loop, and narrowband detection techniques. Advantages over conventional techniques (line-of-sight or radio star measurement) are claimed including stable received flux, measurement in situ at operational elevation, accurate crosscalibration with other earth-station antennas, and removal of the influence of propagation on the signal level.
Formation of shallow photodiodes by implantation of boron into mercury cadmium telluride
- Author(s): P.G. Pitcher ; P.L.F. Hemment ; Q.V. Davis
- Source: Electronics Letters, Volume 18, Issue 25, p. 1090 –1092
- DOI: 10.1049/el:19820745
- Type: Article
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Hall-effect measurements on p-type MCT implanted with 1 × 1014 B+/cm2 at 150 keV show that an abrupt junction is formed at a depth of 0.6 ± 0.12 μm after annealing at 230° for 7 min with a ZnS cap. Prior to the anneal the carrier profile was graded and extended to a depth of 5.0 ± 1.0 μm. Photodiodes have been formed by a dual implant of 5 × 1014 B+/cm2 at 100 keV and 50 keV, and after annealing a five-fold improvement in RoA has been measured to give a value of 1.2 Ωcm2.
Simple spectral control technique for external cavity laser transmitters
- Author(s): K.R. Preston
- Source: Electronics Letters, Volume 18, Issue 25, p. 1092 –1094
- DOI: 10.1049/el:19820746
- Type: Article
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An active control technique which can be used to maintain an external cavity laser transmitter in a single longitudinal mode is described. The circuitry is contained in a single integrated circuit and provides mean power control of the laser output in addition to spectral control. Single-mode operation has been demonstrated over a temperature range of 25°C.
Evidence of detrimental surface effects on GaAs power MESFETs
- Author(s): J.M. Dumas ; J. Paugam ; C. le Mouellic
- Source: Electronics Letters, Volume 18, Issue 25, p. 1094 –1095
- DOI: 10.1049/el:19820747
- Type: Article
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GaAs power FETs submitted to biased life tests show a gradual degradation resulting in an output power loss and changes on DC characteristics such as gate-to-drain breakdown voltage and gate leakage current. It is shown that this degradation is correlated with surface effects.
Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant
- Author(s): R.D. Burnham ; W. Streifer ; D.R. Scifres ; C. Lindström ; T.L. Paoli ; N. Holonyak
- Source: Electronics Letters, Volume 18, Issue 25, p. 1095 –1097
- DOI: 10.1049/el:19820748
- Type: Article
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The letter reports low-threshold MO-CVD GaAlAs DH (∼7730 Å) lasers containing Mg as the p-type dopant. The structure consists of symmetric stepped index cladding layers on both sides of a thin single quantum well (∼60 Å) active region. Broad-area threshold current densities of 460 A cm−2 and 270 A cm−2 are achieved for cavity lengths of 250 and 500 μm, respectively. Broad-area room-temperature lasers without facet coatings emit in excess of 400 mW/facet CW output power.
High-efficiency GaAs power MESFETs prepared by ion implantation
- Author(s): M. Feng ; H. Kanber ; V.K. Eu ; M. Siracusa
- Source: Electronics Letters, Volume 18, Issue 25, p. 1097 –1099
- DOI: 10.1049/el:19820749
- Type: Article
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GaAs power MESFETs have been fabricated using ion implantation to form channel layers. A 1 μm gate length by 2400 μm gate width device has demonstrated an output power of 1.63 W with 6.9 dB associated gain, 35% power-added efficiency and 9.7 dB linear gain at 10 GHz. The transconductance of this device is 280 mS, which corresponds to 117 mS/mm. This result demonstrates that excellent GaAs power MESFETs can be made by ion implantation, and is comparable to average results demonstrated by devices made by AsCl3 vapour phase epitaxy.
Analogue-to-digital conversion using integrated electro-optic interferometers
- Author(s): G.D.H. King and R. Cebulski
- Source: Electronics Letters, Volume 18, Issue 25, p. 1099 –1100
- DOI: 10.1049/el:19820750
- Type: Article
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The design, fabrication and performance of integrated electro-optic Mach-Zehnder interferometers is described. Operation of a 4-bit analogue-to-digital convertor comprising an array of interferometers with an integral optical input distributor has been demonstrated. Good high-frequency performance is indicated by the results of signal/noise measurements on the output signal.
Novel architecture for a time division switch
- Author(s): P.L. Nicholson
- Source: Electronics Letters, Volume 18, Issue 25, p. 1100 –1101
- DOI: 10.1049/el:19820751
- Type: Article
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A layout for a single-chip implementation of a time switch for a digital switching system is described. Using only a few simple cell types, a complete switch can be designed by connecting the cells in regular arrays. Interconnect wiring is incorporated into the cells, so the effort required to design a time switch of any size is minimised.
Exact design of switched-capacitor bandpass ladder filters
- Author(s): M.S. Tawfik ; C. Terrier ; C. Caillon ; J. Borel
- Source: Electronics Letters, Volume 18, Issue 25, p. 1101 –1103
- DOI: 10.1049/el:19820752
- Type: Article
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An exact design of switched-capacitor bandpass filters is presented. This new technique is based on the distributed circuit theory with a suitable bandpass transformation. The theoretical aspects of this method are given as well as the simulated results using a switched-capacitor circuit-analysis program.
First measurement of a superconducting microstrip-line attenuation constant at 10 GHz
- Author(s): R. Pöpel
- Source: Electronics Letters, Volume 18, Issue 25, p. 1103 –1105
- DOI: 10.1049/el:19820753
- Type: Article
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An Nb/Nb2O5/PbInAu microstrip resonator of 0.4 μm di-electric height at 10 GHz and 4.2 K exhibited an unloaded Q of 257 with a measurement uncertainty of ±5%. This confirms the conductor losses calculated according to the Mattis-Bardeen theory. The dielectric loss factor of Nb2O5 at 10 GHz and 4.2 K is also confirmed by this measurement to be as in the subgigahertz range, namely 2.1 × 10−3.
Novel leaky-wave antenna for millimetre waves based on groove guide
- Author(s): A.A. Oliner and P. Lampariello
- Source: Electronics Letters, Volume 18, Issue 25, p. 1105 –1106
- DOI: 10.1049/el:19820754
- Type: Article
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A new type of leaky-wave antenna, with a simple longitudinally continuous configuration, is described. The antenna is based on the groove guide, a low-loss waveguide for millimetre waves.
New form of liquid crystal touch switch
- Author(s): M.J. Bradshaw ; C. Hilsum ; E.P. Raynes
- Source: Electronics Letters, Volume 18, Issue 25, p. 1106 –1108
- DOI: 10.1049/el:19820755
- Type: Article
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A new type of touch switch based on the standard liquid-crystal display cell has been developed. The switch, which responds to slight finger pressure, overcomes many of the problems associated with conventional touch switches. The letter describes the operating principle, realignment due to liquid flow, and reports measurements of switch sensitivity.
Measurement of radiative recombination coefficient and carrier leakage in 1.3 μm InGaAsP lasers with lightly doped active layers
- Author(s): C.B. Su ; J. Schlafer ; J. Manning ; R. Olshansky
- Source: Electronics Letters, Volume 18, Issue 25, p. 1108 –1110
- DOI: 10.1049/el:19820756
- Type: Article
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Carrier lifetime and spontaneous emission data for InGaAsP lasers with lightly doped active layers are used to measure the carrier-dependent radiative coefficient B(n) and the leakage current due to electron drift. The Auger recombination coefficient is less than 0.1 × 10−28 cm6/s.
Effects of broadband noise in radio-frequency six-port scattering-parameter measurements
- Author(s): R.N. Clarke and D.A. Granville-George
- Source: Electronics Letters, Volume 18, Issue 25, p. 1110 –1112
- DOI: 10.1049/el:19820757
- Type: Article
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Significant errors can arise in six-port metrology if broadband noise is present on the source signal. In order to describe noise effects, six-port analysis has been extended to include junction parameters which allow for noise correlations. The effects are demonstrated by means of a theoretical example and by reference to white-noise excitation of a six-port reflectometer operating at 10 MHz–1 GHz. Errors of the order of 0.2% in a reflectivity of 1.0 may result if an unfiltered broadband source such as a synthesiser is used.
Phase-shift keying: symbol error rate in presence of random fluctuation noise—an elementary treatment
- Author(s): D. Maurice
- Source: Electronics Letters, Volume 18, Issue 25, p. 1112 –1113
- DOI: 10.1049/el:19820758
- Type: Article
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The symbol error rate in a multiple phase-shift-keying system is calculated by a method that differs from that adopted in the US technical literature. The stimulus for error creation is assumed to be random fluctuation noise.
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