Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 1, 7 January 1982
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Volume 18, Issue 1
7 January 1982
General stray-insensitive first-order active SC network
- Author(s): P.V. Ananda Mohan ; V. Ramachandran ; M.N.S. Swamy
- Source: Electronics Letters, Volume 18, Issue 1, p. 1 –2
- DOI: 10.1049/el:19820001
- Type: Article
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A general first-order switched-capacitor network using one operational amplifier, insensitive to stray capacitances, is proposed. Its application to realise an inverting bilinear lossy integrator and a circuit for realising finite zeros is discussed.
InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current
- Author(s): I. Mito ; M. Kitamura ; K. Kaede ; Y. Odagiri ; M. Seki ; M. Sugimoto ; K. Kobayashi
- Source: Electronics Letters, Volume 18, Issue 1, p. 2 –3
- DOI: 10.1049/el:19820002
- Type: Article
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Using a new LPE growth technique, an InGaAsP/InP planar buried heterostructure laser diode (PBH-LD) has been realised in 1.3 and 1.5 μm wavelength regions. As a result of the effective carrier confinement, CW threshold currents as low as 8.5 mA and 13 mA have been obtained in 1.3 and 1.5 μm PHB-LDs, respectively, at room temperature.
∼1.40 eV emission band in GaAs
- Author(s): S.H. Xin ; C.E.C. Wood ; D. DeSimone ; S. Palmateer ; L.F. Eastman
- Source: Electronics Letters, Volume 18, Issue 1, p. 3 –5
- DOI: 10.1049/el:19820003
- Type: Article
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Photoluminescence techniques have been used to detect and characterise the ∼ 1.40 eV emission band in an Mn-doped GaAs MBE epilayer and heated semi-insulating Cr-doped GaAs. An activation energy ∼ 110 ± 5 meV is obtained from the temperature quenching of the emission intensity, and evidence indicated that physical movement of the Mn atom is responsible for type conversion.
94 GHz balanced fin-line mixer
- Author(s): W. Menzel and H. Callsen
- Source: Electronics Letters, Volume 18, Issue 1, p. 5 –6
- DOI: 10.1049/el:19820004
- Type: Article
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A 94 GHz balanced mixer using fin-line circuitry and commercially available beam-load diodes is presented. The fin-line mixer structure is etched from a 0.5×0.5 in. (1.25 cm) quartz substrate of 0.11 mm thickness. A description of the circuit and its performance is given.
Propagation characteristics of leaky SAWs on water/LiNbO3 boundary measured by acoustic microscope with line-focus beam
- Author(s): J. Kushibiki ; A. Ohkubo ; N. Chubachi
- Source: Electronics Letters, Volume 18, Issue 1, p. 6 –7
- DOI: 10.1049/el:19820005
- Type: Article
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A nonscanning reflection acoustic microscope with a line-focus beam is applied to investigate propagation characteristics of leaky SAWs on water/LiNbO3 boundary. Experiments are performed for both cases without and with an Al-film shorting plane at the boundary of water/Y-cut-LiNbO3. The effect of water ‘loading’ on LiNbO3 is successfully detected.
Nonradiative regions in GaInAsP/InP double heterostructure laser material: correlation with dislocation clusters in the substrates
- Author(s): C.R. Elliott ; J.C. Regnault ; B. Wakefield
- Source: Electronics Letters, Volume 18, Issue 1, p. 7 –8
- DOI: 10.1049/el:19820006
- Type: Article
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The results of an examination of GaInAsP/InP laser material grown by liquid phase epitaxy using transmission cathodoluminescence, polarised infra-red microscopy and electrochemical etching techniques are reported. It is shown that dislocation clusters in the InP substrate give rise to non-radiative regions in the active layer.
Sensitivity of the symmetric form filter
- Author(s): E.J.P. May and H.H. Mehdi
- Source: Electronics Letters, Volume 18, Issue 1, p. 8 –10
- DOI: 10.1049/el:19820007
- Type: Article
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A new filter realisation known as the symmetric form filter has already becn described and its noise/linearity performance analysed. A study is made of its sensitivity characteristics, which shows that the sensitivity of centre frequency, ωp, with respect to the gain-bandwidth product (GB) is lower than that of the companion form 1 filter realisation.
Simple formula giving spectrum-narrowing ratio of semiconductor-laser output obtained by optical feedback
- Author(s): K. Kikuchi and T. Okoshi
- Source: Electronics Letters, Volume 18, Issue 1, p. 10 –12
- DOI: 10.1049/el:19820008
- Type: Article
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The letter presents a theory of the spectrum-narrowing effect of semiconductor lasers by optical feedback. A simple formula for the 3 dB spectral width is derived as a function of the intensity and phase of the returning beam and the round-trip time of the feedback circuit. The spectrum-narrowing ratio of a GaAlAs laser with a small amount of optical feedback was measured as a function of the optical feedback power ratio. The derived formula and experiment show very good agreement.
New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions
- Author(s): F. Capasso
- Source: Electronics Letters, Volume 18, Issue 1, p. 12 –13
- DOI: 10.1049/el:19820009
- Type: Article
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A new low-excess-noise avalanche detector is proposed. In this structure electrons and holes are spatially separated and impact ionise in regions of different bandgap. The ionisation rates ratio can thus be made extremely high (α/β≥100) by suitably choosing the bandgap difference, so that the device mimics a photomultiplier. This new concept is applicable to most III-V lattice-matched heterojunctions, including long-wavelength materials.
High-performance integrated Fresnel lenses on oxidised silicon substrate
- Author(s): S. Valette ; A. Morque ; P. Mottier
- Source: Electronics Letters, Volume 18, Issue 1, p. 13 –15
- DOI: 10.1049/el:19820010
- Type: Article
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We report, to our knowledge for the first time, the achievement of analogue integrated Fresnel lenses having very high performances, and the association of two such lenses. Focusing efficiencies higher than 60% have been measured on that component with a background noise lower than −27 dB at 1° off-axis in the focal line.
Degree of polarisation in a birefringent single-mode optical fibre
- Author(s): B. Crosignani and P. di Porto
- Source: Electronics Letters, Volume 18, Issue 1, p. 15 –16
- DOI: 10.1049/el:19820011
- Type: Article
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We examine the evolution of the polarisation of a field propagating in a birefringent single-mode optical fibre. The explicit dependence of the degree of polarisation on pulse duration, coherence time of the source and chromatic delay of the fibre is derived.
Visualisation of ultrasonic waves launched by PVF2 piezofilm transducers
- Author(s): D.I. Crecraft ; C.J.S. Davies ; K.G. Hall
- Source: Electronics Letters, Volume 18, Issue 1, p. 16 –17
- DOI: 10.1049/el:19820012
- Type: Article
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The single-cycle wavefront propagated into water by PVF2-film transducers is visualised by a stroboscopic Schlieren system, and is compared with that from conventional piezoceramic probes. For the film transducers, no edge waves can be observed, nor are they apparent in the transmit-receive impulse response.
InGaAsP/InP dual wavelength lasers
- Author(s): S. Sakai ; T. Aoki ; M. Umeno
- Source: Electronics Letters, Volume 18, Issue 1, p. 17 –18
- DOI: 10.1049/el:19820013
- Type: Article
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The first successful dual wavelength lasers emitting at 1.2 μm and 1.3 μm wavelengths are described. The lasers operated up to 0°C.
Dual wavelength InGaAsP/Inp TJS lasers
- Author(s): S. Sakai ; T. Aoki ; M. Umeno
- Source: Electronics Letters, Volume 18, Issue 1, p. 18 –20
- DOI: 10.1049/el:19820014
- Type: Article
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InGaAsP/InP dual wavelength TJS lasers emitting at 1.17 μm and 1.3 μm wavelengths at room temperature are described. The threshold currents for both diodes are the same. The fabrication procedure and characteristics of the lasers are presented.
Rayleigh wave absorption via acoustic microscopy
- Author(s): R.D. Weglein
- Source: Electronics Letters, Volume 18, Issue 1, p. 20 –21
- DOI: 10.1049/el:19820015
- Type: Article
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The acoustic material signature(AMS) model may be used to extract acoustic propagation loss for Rayleigh waves via the reflection acoustic microscope. Attenuation measurements for two metallic material examples are consistent with published results on bulk wave scattering losses.
Silicon implanted super low-noise GaAs MESFET
- Author(s): M. Feng ; V.K. Eu ; M. Siracusa ; E. Watkins ; H. Kimura ; H. Winston
- Source: Electronics Letters, Volume 18, Issue 1, p. 21 –23
- DOI: 10.1049/el:19820016
- Type: Article
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Super low-nose GaAs MESFETs have been fabricated using direct ion implantation into undoped LEC substrates. Microwave results at 12 GHz include a noise figure of 1.3 dB, with an associated gain of 10.3 dB and a maximum available gain of 14.9 dB.
1.3μm InGaAsP/InP light emitting diodes with internally defined emission area prepared by single-step LPE technique
- Author(s): J. Heinen
- Source: Electronics Letters, Volume 18, Issue 1, p. 23 –24
- DOI: 10.1049/el:19820017
- Type: Article
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An LPE single-step process is described for the fabrication of InGaAsP/InP double heterostructure surface emitting LEDs with internally defined emission area. The technique provides a simple production method which lends itself to simple upside-up mounting of LED chips and application of back surface mirrors for enhancement of light extraction efficiency.
Bandgap voltage reference sources in CMOS technology
- Author(s): R. Ye and Y. Tsividis
- Source: Electronics Letters, Volume 18, Issue 1, p. 24 –25
- DOI: 10.1049/el:19820018
- Type: Article
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Two configurations are proposed for the implementation of bandgap reference sources in CMOS technology. The circuits presented are capable of high temperature operation, and allow a choice of the positive supply rail, the negative supply rail, or ground as the reference point.
Double heterojunction NpN GaAlAs/GaAs bipolar transistor
- Author(s): H. Beneking and L.M. Su
- Source: Electronics Letters, Volume 18, Issue 1, p. 25 –26
- DOI: 10.1049/el:19820019
- Type: Article
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Double heterojunction NpN Ga0.7Al0.3As/GaAsAs/Ga0.7Al0.3-As bipolar transistors have been developed and tested. Besides a wide-gap emitter a wide-gap collector was added to form the NpN double heterojunction structure, which can be operated as a bipolar transistor in bidirection. I/V measurements show that the turn-on voltage of about 0.2 V, which is the normal case in Npn wide-gap emitter GaAsAs/Ga0.7Al0.3As transistors (common emitter), is eliminated. As compared with the Npn GaAs transistor the storage time ts of the NpN GaAs transistor is reduced by a factor of about 2.
CW operation of DFB-BH GaInAsP/InP lasers in 1.5 μm wavelength region
- Author(s): T. Matsuoka ; H. Nagai ; Y. Itaya ; Y. Noguchi ; Y. Suzuki ; T. Ikegami
- Source: Electronics Letters, Volume 18, Issue 1, p. 27 –28
- DOI: 10.1049/el:19820020
- Type: Article
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Distributed-feedback buried heterostructure (DFB-BH) GaInAsP/InP lasers in the 1.5 μm wavelength region have been operated continuously at heat-sink temperatures as high as 310 K. A threshold current of 55 mA at 300 K and single longitudinal mode operation have been obtained.
Measurement of stresses in optical fibre or preform
- Author(s): P.L. Chu and T. Whitbread
- Source: Electronics Letters, Volume 18, Issue 1, p. 28 –29
- DOI: 10.1049/el:19820021
- Type: Article
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The stress distribution in the cross-section of an optical fibre or preform is measured based on the principle of the Abel transform. It is also shown that the axial stress component has the same shape as that of the refractive index profile of the preform.
High efficiency single-mode fibre to Ti:LiNbO3 waveguide coupling
- Author(s): V. Ramaswamy ; R.C. Alferness ; M. Divino
- Source: Electronics Letters, Volume 18, Issue 1, p. 30 –31
- DOI: 10.1049/el:19820022
- Type: Article
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We have achieved a single-mode fibre to waveguide to fibre total insertion loss as low as 1 dB for a 1 cm-long titanium-diffused lithium niobate waveguide.
Low-frequency limitations of ultrabroadband matched microwave amplifiers
- Author(s): F. Perez and J. Obregon
- Source: Electronics Letters, Volume 18, Issue 1, p. 31 –33
- DOI: 10.1049/el:19820023
- Type: Article
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The low-frequency analysis of different structures of ultra-broadband matched amplifiers is presented. The results show clearly that the device transconductance is the most important characteristic to consider when selecting the best amplifier configuration. A new configuration is proposed.
Finite-element analysis of the discontinuities in a dielectric slab waveguide bounded by parallel plates
- Author(s): M. Koshiba ; K. Ooishi ; T. Miki ; M. Suzuki
- Source: Electronics Letters, Volume 18, Issue 1, p. 33 –34
- DOI: 10.1049/el:19820024
- Type: Article
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A method for the solution of the discontinuity problem of TE modes and TM modes in a dielectric slab waveguide bounded by parallel plates is described. The approach is a combination of the finite-element and the analytical method. Results are compared with those given by previous authors.
Double polysilicon plate capacitors with oxide/nitride insulator
- Author(s): G. Gildenblat ; M. Ghezzo ; J. Norton
- Source: Electronics Letters, Volume 18, Issue 1, p. 34 –36
- DOI: 10.1049/el:19820025
- Type: Article
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The letter describes the fabrication procedure and the electrical properties of a double polysilicon plate capacitor with composite SiO2/Si3N4 insulators. The presence of the Si3N4 layer allows elimination completely of low-voltage breakdown events and reduces the leakage current to the 10−9 A/cm2 level. Different layout configurations are compared based on the evaluation of experimental data.
Output feedback optimal controller for linear single-input system
- Author(s): C.M. Lim and Y.N. Yu
- Source: Electronics Letters, Volume 18, Issue 1, p. 36 –38
- DOI: 10.1049/el:19820026
- Type: Article
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The design of an optimal controller for a linear single-input system with incomplete state measurements is described. The optimal controller is so designed that only some or all the system output variables are required for the feedback. Application examples to a power system are included.
Numerical parametric studies for controlling the wavelength of minimum dispersion in germania fluoro-phosphosilicate single-mode fibres
- Author(s): L.G. Cohen ; W.L. Mammel ; S. Lumish
- Source: Electronics Letters, Volume 18, Issue 1, p. 38 –39
- DOI: 10.1049/el:19820027
- Type: Article
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Chromatic dispersion effects have been calculated for light-guides containing germania-doped silica in the core and fluorine-doped phosphosilicate in the cladding. Numerical results show how to partition core and cladding refractive-index levels in order to control the minimum dispersion wavelength.
New clock feedthrough cancellation technique for analogue MOS switched-capacitor circuits
- Author(s): K. Martin
- Source: Electronics Letters, Volume 18, Issue 1, p. 39 –40
- DOI: 10.1049/el:19820028
- Type: Article
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A new technique for minimising DC offsets caused by clock feedthrough in switched-capacitor circuits is presented. Unlike some techniques presented in the past, the clock feedthrough cancellation is dependent only on matching and the common mode rejection ratio of the op-amps. The technique is quite general and can be applied to most switched-capacitor circuits that use differential input op-amps.
52 km-long single-mode optical fibre fault location using the stimulated Raman scattering effect
- Author(s): K. Noguchi ; Y. Murakami ; K. Yamashita ; F. Ashiya
- Source: Electronics Letters, Volume 18, Issue 1, p. 41 –42
- DOI: 10.1049/el:19820029
- Type: Article
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A new method of fault location for an ultra-long single-mode optical fibre is proposed. It uses the Stokes light pulses as a probing pulse, which is generated by the stimulated Raman scattering effect in the measured fibre. Experimental results show that the fibre broken points with no Fresnel reflection up to 52 km are observable with this method.
Monte Carlo analysis of sensitivity of threshold voltage in small geometry MOSFETs
- Author(s): A.R. Alvarez and L.A. Akers
- Source: Electronics Letters, Volume 18, Issue 1, p. 42 –43
- DOI: 10.1049/el:19820030
- Type: Article
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A Monte Carlo technique is used to investigate the effects of process variations on the threshold voltage of a small geometry MOSFET. Results indicate that by controlling the variation of process parameters to ±10%, the threshold voltage variation is limited to ± 110 mV at 0.739 V (15%).
Experimental 1.51 μm monomode fibre link containing an injection locked repeater
- Author(s): D.W. Smith and D.J. Malyon
- Source: Electronics Letters, Volume 18, Issue 1, p. 43 –45
- DOI: 10.1049/el:19820031
- Type: Article
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An optical fibre link operating over 10km of monomode fibre using an injection locked semiconductor laser as a repeater is demonstrated. The experimental link operates at the wavelength of 1.51 μm and optical frequency modulation is employed. Demodulation is achieved by using an optical delay technique.
Thermal-stress-induced birefringence in single-mode elliptical optical fibre
- Author(s): P.L. Chu
- Source: Electronics Letters, Volume 18, Issue 1, p. 45 –47
- DOI: 10.1049/el:19820032
- Type: Article
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The thermal stress distributions in both the core and cladding of a single-mode elliptical optical fibre are analysed. It is found that the stresses in the core do not vary with position but the stresses in the cladding are complicated functions of position. A simple formula is given for the calculation of bire-fringence caused by the thermal stresses.
Inductorless current conveyor allpass filter using grounded capacitors
- Author(s): K. Pal and R. Singh
- Source: Electronics Letters, Volume 18, Issue 1, page: 47 –47
- DOI: 10.1049/el:19820033
- Type: Article
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An inductorless allpass filter using three second generation current conveyors (CCIIs) has been reported. The circuit offers high input impedance, controllable voltage gain and uses grounded capacitors.
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