Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 18, Issue 10, 13 May 1982
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Volume 18, Issue 10
13 May 1982
(AlGa)As strip buried-heterostructure lasers prepared by hybrid crystal growth
- Author(s): W.T. Tsang and R.A. Logan
- Source: Electronics Letters, Volume 18, Issue 10, p. 397 –398
- DOI: 10.1049/el:19820271
- Type: Article
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p.
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–398
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The localised nonwetting problem encountered during regrowth by LPE in the fabrication of a strip buried-heterostructure (SBH) laser was solved by using the hybrid process of MBE to grow the uniform four-layer heterostructure and LPE to achieve the melt back and regrowth. As a result of this process, a very significant improvement in the device yield was obtained.
Germanium-oxide glass optical fibre prepared by VAD method
- Author(s): H. Takahashi ; I. Sugimoto ; T. Sato
- Source: Electronics Letters, Volume 18, Issue 10, p. 398 –399
- DOI: 10.1049/el:19820272
- Type: Article
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p.
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–399
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Germanium-oxide glass optical fibre doped with antimony for transmission of the 2 to 3 μm band has been prepared by the vapour-phase axial deposition (VAD) method. An attenuation loss of 13 dB/km at 2.05 μm and 70 dB/km at 2.4 μm has been achieved.
IMPATT oscillator for groove guide at 95 GHz
- Author(s): D.J. Harris and S. Mak
- Source: Electronics Letters, Volume 18, Issue 10, p. 399 –400
- DOI: 10.1049/el:19820273
- Type: Article
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p.
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–400
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An oversized-cavity millimetre-wave IMPATT oscillator has been constructed which can be easily coupled to a groove guide via a simple transformer. A resonant-cap structure is used to determine the frequency of oscillation. The oversized-cavity results in the Q of the oscillator being greater than that of a conventional impatt oscillator, but the output power and frequency are nevertheless stable. The tuning characteristic is discussed and a frequency spectrum presented.
Application of complementary transformation to NIC compensated amplifiers
- Author(s): T.S. Rathore
- Source: Electronics Letters, Volume 18, Issue 10, p. 400 –401
- DOI: 10.1049/el:19820274
- Type: Article
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–401
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It is shown that complementary transformation is applicable to a recently proposed active compensated op-amp inverting amplifier.
High-performance SAW convolver using 3-phase unidirectional transducers
- Author(s): C.L. West
- Source: Electronics Letters, Volume 18, Issue 10, p. 401 –403
- DOI: 10.1049/el:19820275
- Type: Article
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–403
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The development of a new SAW convolver with a bandwidth 45 MHz, interaction time 12 μs and which employs 3-phase unidirectional transducers is discussed. The resulting device has high efficiency (−58 dBm) and displays good self-convolution suppression. Only single-stage fabrication is required.
Low-loss low-ripple SAW filters using three bidirectional centrosymmetric transducers
- Author(s): K.H. Yen ; R.B. Stokes ; K.F. Lau ; A. Kong ; R.S. Kagiwada
- Source: Electronics Letters, Volume 18, Issue 10, p. 403 –404
- DOI: 10.1049/el:19820276
- Type: Article
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p.
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–404
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Low-loss, low-ripple and high out-of-band rejection SAW filters have been constructed using a three transducer configuration with symmetric/antisymmetric end transducers. The filter on 128°-cut LiNbO3 has an insertion loss of 5.2 dB, a passband ripple of 0.3 dB (peak to peak) and an out-of-band rejection of 55 dB.
Compensation of discrete systems to variations in their parameters by changing sampling period
- Author(s): M.B. Paz ; M. de la Sen ; S. Dormido ; M. Mellado
- Source: Electronics Letters, Volume 18, Issue 10, p. 404 –406
- DOI: 10.1049/el:19820277
- Type: Article
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–406
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Three methods of redesigning the sampling period to compensate known variations in the parameters of a discrete linear system are presented. These methods are based on the use of linearisations in the z-transform or in the time domains.
Influence of surface-wave excitation on efficiency of space-wave launching in microstrip disc antennas
- Author(s): S.B.de A. Fonseca and A.J. Giarola
- Source: Electronics Letters, Volume 18, Issue 10, p. 406 –407
- DOI: 10.1049/el:19820278
- Type: Article
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p.
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–407
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The cavity model with magnetic side walls and dyadic Green's functions was used to study microstrip disc antennas. Curves of efficiency of space-wave launching and directivity as functions of the ratio of the dielectric thickness to the disc radius d/a are shown for two dielectrics: εr=2.55 and 9.60. The results are useful for the design of these antennas.
Liquid phase epitaxy of a new semiconductor AlGaInSb
- Author(s): E. Lendvay
- Source: Electronics Letters, Volume 18, Issue 10, p. 407 –408
- DOI: 10.1049/el:19820279
- Type: Article
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p.
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–408
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A new semiconductor system in the quaternary group, AlxGayIn1−x−ySb has been prepared. The growth of bulk materials is very difficult because of the reactivity of Al and the segregation effects, but LPE methods were successfully applied to grow homogeneous and good-quality epitaxial layers onto InSb and GaSb.
New chemical etching solution for InP and GaInAsP gratings
- Author(s): T. Saitoh ; O. Mikami ; H. Nakagome
- Source: Electronics Letters, Volume 18, Issue 10, p. 408 –409
- DOI: 10.1049/el:19820280
- Type: Article
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–409
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A new chemical etching solution of bromine-water system, which is suitable for transforming the fine resist grating mask pattern onto InP and GaInAsP surfaces, is reported. The Br2:H2O:H3PO4 (or HCl) solution does not dissolve AZ 1350 photoresist and exhibits both moderate etching rate and a pit-free etched surface.
Room-temperature CW operation of 1.60 μm GaInAsP/InP buried-heterostructure integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide
- Author(s): Y Abe ; K. Kishino ; T. Tanbun-Ek ; S. Arai ; F. Koyama ; K. Matsumoto ; T. Watanabe ; Y. Suematsu
- Source: Electronics Letters, Volume 18, Issue 10, p. 410 –411
- DOI: 10.1049/el:19820281
- Type: Article
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p.
410
–411
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CW operation of a 1.60 μm GaInAsP/InP buried-heterostructure integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (BH BJB DBR integrated laser) was achieved at room temperature. Single longitudinal-mode operation at fixed mode was obtained in a temperature range of about 60 deg C, under the CW condition, and it was also maintained under rapid direct modulation of 1.6 GHz.
Approximate scalar finite-element analysis of anisotropic optical waveguides
- Author(s): M. Koshiba ; K. Hayata ; M. Suzuki
- Source: Electronics Letters, Volume 18, Issue 10, p. 411 –413
- DOI: 10.1049/el:19820282
- Type: Article
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p.
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–413
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An approximate scalar finite-element program for the analysis of anisotropic optical waveguides with a diagonal permittivity tensor is described. The accuracy of the method has been checked by calculating the eigenmodes of two-dimensional, anisotropic asymmetric slab waveguides. The results obtained for a channel waveguide embedded in LiNbO3 agree well with the results of the earlier vectorial finite-element method.
Novel lossless synthetic floating inductor employing a grounded capacitor
- Author(s): Raj Senani
- Source: Electronics Letters, Volume 18, Issue 10, p. 413 –414
- DOI: 10.1049/el:19820283
- Type: Article
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p.
413
–414
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A new lossless synthetic floating inductance circuit, employing a grounded capacitor and CC IIs as active elements, is presented which, in contrast to recently reported circuits, does not require any component-matching condition for the desired realisation. The other novel features of the circuit are use of a minimum possible number of passive components and inductance control through a single grounded resistor.
Strain of optical fibres of an optical submarine cable on the sea bed
- Author(s): K. Tatekura ; H. Yamamoto ; Y. Ejiri
- Source: Electronics Letters, Volume 18, Issue 10, p. 414 –415
- DOI: 10.1049/el:19820284
- Type: Article
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p.
414
–415
(2)
The letter describes strain of optical fibres of an optical submarine cable on the sea bed. The test results of the sea trial show that the strain of optical fibres will be relaxed by the lower temperature and the higher pressure on the sea bed.
Substrate effects on performance of InP MOSFETs
- Author(s): J. Woodward ; G.T. Brown ; B. Cockayne ; D.C. Cameron
- Source: Electronics Letters, Volume 18, Issue 10, p. 415 –417
- DOI: 10.1049/el:19820285
- Type: Article
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p.
415
–417
(3)
InP MOSFET devices with a SiO2 dielectric layer have been fabricated on p-type and SI substrates. Surface mobilities in the range 250 to 750 cm2 V−1 s−1 have been routinely obtained from all substrates except those from one crystal of Fe-doped SI InP. Defect etching studies have revealed large prismatic dislocation loops in this crystal. A correlation between these observations is proposed.
Velocity/field characteristic measurement using a high-frequency modulated solid-state laser diode
- Author(s): M.H. Evanno and J.L. Vaterkowski
- Source: Electronics Letters, Volume 18, Issue 10, p. 417 –418
- DOI: 10.1049/el:19820286
- Type: Article
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p.
417
–418
(2)
A new experimental method to determine a velocity/field characteristic in semiconductor material is reported. This is a time-of-flight technique based on the phase-shift measurement between the photocurrent created by the output modulated light beam of a laser solid-state diode and the high-frequency signal which modulates the laser. First results concerning hole velocity in silicon and electron velocity in gallium arsenide are presented.
Effects of border variations due to spatial quantisation on binary-image template matching
- Author(s): D. Lavie and W.K. Taylor
- Source: Electronics Letters, Volume 18, Issue 10, p. 418 –420
- DOI: 10.1049/el:19820287
- Type: Article
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p.
418
–420
(3)
Quantised binary images are formed by projecting the binary intensity silhouette or line edge of a shape onto a spatial quantisation grid. The quantised shape depends on the orientation and translation of the object's image. Different complexities in the borders, due to the quantisation effects, are part of the error arising in a binary template-match process. The letter suggests a model to approximate the variation statistics as a result of uncertainty in translation only. To isolate the quantisation effects, noise-free images are considered.
Design of hybrid diversity on overwater paths
- Author(s): J.A. Garcia-Lopez ; J.M. Ferrandiz ; J.M. Selga
- Source: Electronics Letters, Volume 18, Issue 10, p. 420 –422
- DOI: 10.1049/el:19820288
- Type: Article
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420
–422
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In the design of hybrid diversity, two options are possible giving different performances to the diversity system. Both options are analysed in the case of radio links over smooth surfaces. For the calculation of the vertical antenna spacing, some considerations are given in order to generalise a method valid for space diversity.
20 Gbit/s optical time multiplexing with TJS GaAlAs lasers
- Author(s): A. Alping ; T. Andersson ; R. Tell ; S.T. Eng
- Source: Electronics Letters, Volume 18, Issue 10, p. 422 –424
- DOI: 10.1049/el:19820289
- Type: Article
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p.
422
–424
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Optical time multiplexing has been demonstrated using ultrashort optical pulses (30 ps) generated by direct modulation of TJS GaAlAs lasers. With the detection method used, an intensity correlator using second-harmonic generation in LiIO3, a bit rate of 20 Gbit/s was observed. However, the ultrashort optical pulses generated by the TJS lasers indicate that optical time multiplexing at 30 Gbit/s can be achieved.
Single-crystal metal-semiconductor microjunctions prepared by molecular beam epitaxy
- Author(s): A.Y. Cho ; E. Kollberg ; H. Zirath ; W.W. Snell ; M.V. Schneider
- Source: Electronics Letters, Volume 18, Issue 10, p. 424 –425
- DOI: 10.1049/el:19820290
- Type: Article
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p.
424
–425
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The electrical properties and the fabrication of single-crystal Al on GaAs microjunctions are described. The devices have a lower barrier height and smaller excess noise at high current densities than junctions prepared by conventional metal-deposition techniques. The improved noise properties are obtained by the elimination of nonuniform current conduction due to oxide clusters at the metal-semiconductor interface.
Unsymmetric broadside-coupled striplines
- Author(s): T. Kitazawa ; H. Kumagami ; Y. Hayashi
- Source: Electronics Letters, Volume 18, Issue 10, p. 425 –426
- DOI: 10.1049/el:19820291
- Type: Article
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p.
425
–426
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A variational expression is presented for the line capacitance of broadside-coupled striplines, whose central axes are shifted. Quasistatic characteristics are presented for isotropic and anisotropic substrates.
Mode locking of Brewster-angled semiconductor lasers
- Author(s): J. Chen ; W. Sibbett ; J.I. Vukusic
- Source: Electronics Letters, Volume 18, Issue 10, p. 426 –428
- DOI: 10.1049/el:19820292
- Type: Article
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p.
426
–428
(3)
Brewster-angled semiconductor laser diodes have been actively mode locked in an external cavity to produce mode-locked pulses of 11 ps duration and 0.5 W peak power with no evidence of temporal or spectral substructure.
Microwave parametric upper-sideband down convertor with conversion gain
- Author(s): R. Geissler
- Source: Electronics Letters, Volume 18, Issue 10, p. 428 –429
- DOI: 10.1049/el:19820293
- Type: Article
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p.
428
–429
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For the first time a parametric upper-sideband down convertor is introduced at R-band. It has a noticeable large frequency conversion ratio from 34 GHz to 3 GHz, producing a transducer gain GT=5.8 dB if a resistive image termination is used.
Efficient determination of FIR Wiener filters with linear phase
- Author(s): D. Manolakis ; N. Kalouptsidis ; G. Carayannis
- Source: Electronics Letters, Volume 18, Issue 10, p. 429 –431
- DOI: 10.1049/el:19820294
- Type: Article
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–431
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The letter deals with the efficient determination of FIR Wiener filters with linear phase. This task is achieved by exploiting the Toeplitz-plus-Hankel structure which is imposed on the normal equations matrix by the phase linearity constraint and the stationarity assumption. It is shown that the design of these filters is ultimately reduced to the computation of optimum FIR Wiener filters by Levinson's algorithm.
Switched-capacitor FIR cell for n-path filters
- Author(s): S.M. Faruque
- Source: Electronics Letters, Volume 18, Issue 10, p. 431 –432
- DOI: 10.1049/el:19820295
- Type: Article
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–432
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The letter presents a switched-capacitor FIR cell for the design of n-path filters. The cell requires only capacitors and switches and has spectral responses at odd multiples of the clock frequency. An n-path filter based on the proposed cell does not require additional supporting FIR-filters to suppress the side bands and is suitable for frequencies beyond the audio frequency range.
Practical transform techniques for error and erasure correction
- Author(s): P.K.S. Wah and T. Siegenthaler
- Source: Electronics Letters, Volume 18, Issue 10, p. 432 –434
- DOI: 10.1049/el:19820296
- Type: Article
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A simple scheme for encoding and decoding Reed–Solomon (RS) codes employing a modified Fermat number transform (FNT) is proposed. The primitive codeword length N has the form 22n, and every codeword element can be transmitted with exactly 2n bits. The achieved code rate is slightly lower than the theoretical value. But the implementation is straightforward.
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