Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 17, Issue 6, 19 March 1981
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Volume 17, Issue 6
19 March 1981
Radiation suppressed high-Q-dielectric resonators for MIC applications
- Author(s): E. Hagihara ; M. Akaike ; N. Imai
- Source: Electronics Letters, Volume 17, Issue 6, p. 213 –214
- DOI: 10.1049/el:19810151
- Type: Article
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A radiation suppressed high-Q dielectric resonator with a small and simple metal cap for MIC is described. The measured Q0-factor over 10 000 is obtained at 25 GHz, which is comparable to a TE01 mode cylindrical waveguide resonator. This resonator is useful for high frequency stability MIC oscillators.
Low breakdown voltage Schottky diode as voltage regulator
- Author(s): R.S. Popović and D.A. Mladenović
- Source: Electronics Letters, Volume 17, Issue 6, p. 214 –215
- DOI: 10.1049/el:19810152
- Type: Article
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Experimental evidence is given showing that Ag-n-Si Schottky diodes with resistivity about 40 mΩcm have steeper reverse breakdown characteristics than corresponding low-voltage p-n junction regulator diodes fabricated by local epitaxy. Avalanche multiplication in such a diode starts at 1.7 V, and the device has a low positive temperature coefficient of breakdown voltage.
InP MESFET with In0.53Ga0.47As/InP heterostructure contacts
- Author(s): T. Ishibashi
- Source: Electronics Letters, Volume 17, Issue 6, p. 215 –216
- DOI: 10.1049/el:19810153
- Type: Article
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Source and drain contacts for an InP MESFET were prepared by an Au/Ni/In0.53Ga0.47As/InP layered structure, without a metal alloying process. A highly conductive In0.53Ga0.47As layer grown on an InP active layer reduced the gate-source resistance. A maximum DC transconductance of 16 mS has been obtained for an InP MESFET with 1.2×190 μm gate dimensions and a pinch-off voltage of −0.7 V.
Truncation error in 2-D block mode filtering
- Author(s): M.R. Azimi Sadjadi and R.A. King
- Source: Electronics Letters, Volume 17, Issue 6, p. 217 –218
- DOI: 10.1049/el:19810154
- Type: Article
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An investigation is made of the error due to truncated impulse response for the block mode or sectioning technique. The upper bound on the error in terms of the sectioning parameters is obtained and shown to be independent of block size; this results in a simpler approach to obtaining an optimal sectioning procedure.
Integrated NMOS output stage with low output impedance
- Author(s): P.U. Calzolari ; G. Masetti ; C. Turchetti ; M. Severi
- Source: Electronics Letters, Volume 17, Issue 6, p. 218 –220
- DOI: 10.1049/el:19810155
- Type: Article
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An NMOS output amplifier stage employing a particular feedback network giving low values of the output impedance is reported. The best results (about 100Ω) have been obtained with a silicon gate enhancement/depletion technology. Limited values of power and area consumption are required.
Input VSWR of profiled E-plane tapers
- Author(s): M.T. Birand and N. Williams
- Source: Electronics Letters, Volume 17, Issue 6, p. 220 –221
- DOI: 10.1049/el:19810156
- Type: Article
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An efficient method for determining the input VSWR characteristics of waveguide E-plane tapers is presented. The taper profile is approximated by radial waveguide sections and the junction wave transfer matrices are derived applying field matching. The input reflection coefficient is easily determined using these matrices. Results computed using the present method are compared with some measured and calculated results in the literature and very good agreement is obtained.
Fault detection in combinational circuits using Gunn effect logic devices
- Author(s): K.K. Saluja and F.J. Lidgey
- Source: Electronics Letters, Volume 17, Issue 6, p. 222 –223
- DOI: 10.1049/el:19810157
- Type: Article
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It is shown that certain realisations of combinational switching functions using Gunn effect logic gates can be tested for single or multiple stuck-type faults by using two tests only. This result is achieved by exploiting the fact that the function of Gunn effect logic gates is sensitive to bias voltage
Improvement in surface morphology of InGaAsP-InP wafers by dummy layer technique
- Author(s): J. Kinoshita and Y. Uematsu
- Source: Electronics Letters, Volume 17, Issue 6, p. 223 –224
- DOI: 10.1049/el:19810158
- Type: Article
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In LPE growth of an InGaAsP/InP system, a dummy layer was grown successively on the last layer, followed by material selective etching. This technique contributes to the improvement of the surface morphology of the epitaxial wafers and also to high reproducibility in the device fabrication process.
Theoretical advantages of pn+-type Cu2S-ZnO solar cell
- Author(s): M. Burgelman and H.J. Pauwels
- Source: Electronics Letters, Volume 17, Issue 6, p. 224 –226
- DOI: 10.1049/el:19810159
- Type: Article
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New developments in Cu2S thin-film technology allow, in principle, the combination of Cu2S with semiconductors other than CdS or Cd1−xZnxS for solar cell purposes. We discuss here a pn+-type Cu2S-ZnO structure that offers some basic advantages over existing structures. Our analysis predicts a practically achievable efficiency of 17.8%.
High temperature CW operation of 1.5 μm InGaAsP/InP buffer-layer loaded planoconvex waveguide lasers
- Author(s): Y. Noda ; K. Sakai ; Y. Matsushima
- Source: Electronics Letters, Volume 17, Issue 6, p. 226 –227
- DOI: 10.1049/el:19810160
- Type: Article
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InGaAsP/InP buffer-layer loaded planoconvex waveguide lasers are reported. The CW threshold current at 20°C was 70 mA. The maximum CW operating temperature of 70°C was achieved. The characteristic temperature under CW operation was 51 K. Operation in fundamental transverse mode and single longitudinal mode up to 1.9 and 1.4 times the threshold current, respectively, was obtained.
Etched profiles of SiO2 Layer
- Author(s): Se-Ho Oh ; Yearn-Ik Choi ; Young-Se Kwon ; Choong-Ki Kim
- Source: Electronics Letters, Volume 17, Issue 6, p. 227 –229
- DOI: 10.1049/el:19810161
- Type: Article
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Etched-edge profile equations of SiO2 in a double layer of fast- and slow-etching SiO2 layer have been derived using Fermat's principle of least time. Etched profiles obtained from the SEM (scanning electron microscope) micrographs for experimental samples show reasonable agreement with calculated profiles.
Numerical study of inhomogeneous optical waveguide problems using predictor-corrector method
- Author(s): G.L. Yip and H.H. Yao
- Source: Electronics Letters, Volume 17, Issue 6, p. 229 –230
- DOI: 10.1049/el:19810162
- Type: Article
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The predictor-corrector method is used for the study of the inhomogeneous optical waveguide problems. Its accuracy and efficiency have been tested with the inhomogeneous slab waveguide with a finite homogeneous cladding, and compare favourably with the Runge-Kutta and collocation methods, more than halving the computing time for the former. The method also correctly brings out the field behaviour at a caustic.
Pressure dependence of hole mobility in In1−xGaxAsyP1−y and its relation to alloy scattering
- Author(s): J.R. Hayes ; H.L. Tatham ; A.R. Adams ; P.D. Greene
- Source: Electronics Letters, Volume 17, Issue 6, p. 230 –232
- DOI: 10.1049/el:19810163
- Type: Article
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Pressure-induced changes in the hole mobility of the quaternary alloy In1−xGaxAsyP1−y up to 15 kbar indicate that alloy scattering plays an important part in the determination of the low field hole mobility.
Strength of fusion splices for fibre lightguides
- Author(s): J.T. Krause ; C.R. Kurkjian ; U.C. Paek
- Source: Electronics Letters, Volume 17, Issue 6, p. 232 –233
- DOI: 10.1049/el:19810164
- Type: Article
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Fusion splices with median strengths in the range 2.1–2.8 GPa and coefficients of variation of about 40% have been obtained for synthetic fused silica fibre as well as for single mode and multimode lightguides using either flame, arc or laser heating. Although the strength distributions are broad, 90% of the splices have strengths above 1.4 GPa. These strengths, which are significantly higher than those previously reported, have been achieved by avoiding mechanical damage to the glass surface.
Binary date transmission through TV channels by equivalent luminance signal
- Author(s): J. Isailović
- Source: Electronics Letters, Volume 17, Issue 6, p. 233 –234
- DOI: 10.1049/el:19810165
- Type: Article
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The letter describes systems for formatting digital information, and more particularly methods and apparatus for transforming digital information into a format similar to that of a standard colour video signal, for subsequent processing by conventional video circuitry. A new method for luminance signal generation based on binary data is presented.
Effect of cavity length on 1.55 μm buried-heterostructure DH laser characteristics
- Author(s): M. Tokunaga ; Y. Nakano ; K. Takahei ; Y. Noguchi ; H. Nagai ; K. Nawata
- Source: Electronics Letters, Volume 17, Issue 6, p. 234 –236
- DOI: 10.1049/el:19810166
- Type: Article
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Various parameters in 1.55 μm buried-heterostructure DH laser design are obtained by simple analytical approximations and the effect of cavity length on laser characteristics. Threshold current density is found to vary strongly (3–10 kA/cm2) with cavity length when cleaved short enough. Interference in far-field patterns is shown to depend on cavity length.
High speed normally-off GaAs MESFET integrated circuit
- Author(s): F. Katano ; T. Furutsuka ; A. Higashisaka
- Source: Electronics Letters, Volume 17, Issue 6, p. 236 –237
- DOI: 10.1049/el:19810167
- Type: Article
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Normally-off GaAs MESFET integrated circuits with a maximum toggle frequency of 2.4 GHz were fabricated by conventional photolithography. The unfavourable effect of the surface depletion layer due to the large state density at the GaAs surface has been reduced by adopting the recessed gate FET structure.
Photoelastic optical directional couplers in epitaxial GaAs layers
- Author(s): T.M. Benson ; T. Murotani ; P.A. Houston ; P.N. Robson
- Source: Electronics Letters, Volume 17, Issue 6, p. 237 –238
- DOI: 10.1049/el:19810168
- Type: Article
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Photoelastic channel optical waveguides showing strong lateral confinement at λ=1.55 μm have been fabricated by etching a narrow slot through a Au Schottky contact deposited on an n/n+ GaAs layer. Such structures allow electro-optic directional coupler switches of short coupling length (~2 mm) to be easily realised.
Practical deficiency of adaptive control design based on the characteristic variable
- Author(s): H.S. Tang and C.C. Hang
- Source: Electronics Letters, Volume 17, Issue 6, p. 238 –240
- DOI: 10.1049/el:19810169
- Type: Article
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It is shown that the use of the characteristic variable to design model reference adaptive control systems is not practical in the presence of measurement noise.
Sensitivity evaluation for multiple feedback active filters
- Author(s): V.B. Mišić
- Source: Electronics Letters, Volume 17, Issue 6, p. 240 –241
- DOI: 10.1049/el:19810170
- Type: Article
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A systematic approach based on signal flow graph analysis to the evaluation of multiple feedback active filter sensitivity is presented. Its merits are discussed and compared with those of other known techniques.
Use of error patterns in coded communication systems
- Author(s): Wai-Hung Ng
- Source: Electronics Letters, Volume 17, Issue 6, p. 241 –242
- DOI: 10.1049/el:19810171
- Type: Article
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In digital communication systems, receivers often have trouble in deriving the correct bit synchronisation from transitionless received signals. The letter shows that transitionless signals can come from four sources, and that this problem can be easily eliminated by injecting a detectable error pattern into the transmitted coded signal.
Fused single mode fibre access couplers
- Author(s): C.A. Villarruel
- Source: Electronics Letters, Volume 17, Issue 6, p. 243 –244
- DOI: 10.1049/el:19810172
- Type: Article
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Single mode fibre access couplers have been fabricated by chemically etching most of the glass cladding material surrounding the fibre core, and thermally fusing the fibres together in the etched region. The resulting couplers have low loss and are both durable and insensitive to ambient temperature variations.
Vortex shedding fluid flowmeter using optical fibre sensor
- Author(s): J.H. Lyle and C.W. Pitt
- Source: Electronics Letters, Volume 17, Issue 6, p. 244 –245
- DOI: 10.1049/el:19810173
- Type: Article
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An optical fibre flowmeter is described which uses a single fibre mounted transversely to the fluid flow within the pipe. The fibre is vibrated by the natural phenomenon of vortex shedding, causing phase modulation of the optical carrier within. The modulation is detected at the fibre exit by the fibredyne technique, and the flow rate determined from the vibration frequency.
Preparation of CuInS2 on GaP grown by LPE
- Author(s): H.L. Hwang ; W.J. Lin ; H.J. Chang ; C.Y. Sun
- Source: Electronics Letters, Volume 17, Issue 6, p. 245 –246
- DOI: 10.1049/el:19810174
- Type: Article
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The letter describes the use of LPE in the preparation of CuInS2 epitaxial layers. Both the tipping and sliding boat methods were adopted for the LPE growth, the latter being found more suitable.
Erratum: Strays-insensitive switched capacitor biquads with reduced number of capacitors
- Author(s): P. Gillingham
- Source: Electronics Letters, Volume 17, Issue 6, page: 246 –246
- DOI: 10.1049/el:19810175
- Type: Article
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