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image of Volume 17, Issue 25-26
Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 17, Issue 25-26, 10 December 1981

Volumes & issues:

Volume 17, Issue 25

10 December 1981

Electronic phase-noise suppression in diode lasers
Dynamic spectral width of rapidly modulated 1.58 μm GaInAsP/InP buried-heterostructure distributed-Bragg-reflector integrated-twin-guide lasers
  • Author(s): F. Koyama ; A. Arai ; Y. Suematsu ; K. Kishino
  • Source: Electronics Letters, Volume 17, Issue 25, p. 938 –940
  • DOI:  10.1049/el:19810656
  • Type: Article
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  • p. 938 –940 (3)
    The dynamic spectral width of a CW GaInAsP/InP buried-heterostructure distributed-Bragg-reflector integrated-twin-guide (BH-DBR-ITG) laser operating at a wavelength of 1.58 μm was measured under direct modulation up to 3 GHz. The maximum dynamic spectral width at a modulation depth of 100% was measured to be 0.27 nm at the resonance-like frequency of 1.8 GHz. A possibility of wideband transmission of 1.55 μm conventional single-mode fibre at 185 Gbit km is suggested.
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Cross-tie slow-wave coplanar waveguide on semi-insulating GaAs substrates
Current drifting behaviour in InP MISFET with thermally oxidised InP/InP interface
A pauper's algorithm for switched-capacitor circuit analysis
Ion-implanted E/D-type GaAs IC technology
  • Author(s): T. Furutsuka ; T. Tsuji ; F. Katano ; A. Higashisaka ; K. Kurumada
  • Source: Electronics Letters, Volume 17, Issue 25, p. 944 –945
  • DOI:  10.1049/el:19810660
  • Type: Article
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  • p. 944 –945 (2)
    An enhancement/depletion-type GaAs MESFET IC technology has been developed using selective ion implantation into SI GaAs. By reducing the source-gate and the drain-gate spacings down to about 0.4 μm, the unfavourable effect of the surface state1 was effectively lowered, while guaranteeing sufficient breakdown voltages. The minimum propagation delay of 66 ps was achieved in a 15-stage ring oscillator with 1.2 μm-long gate FETs.
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GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide
  • Author(s): Y. Abe ; K. Kishino ; Y. Suematsu ; S. Arai
  • Source: Electronics Letters, Volume 17, Issue 25, p. 945 –947
  • DOI:  10.1049/el:19810661
  • Type: Article
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  • p. 945 –947 (3)
    A novel GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (BJB-DBR integrated laser for short) is proposed and demonstrated. In this structure, it is found theoretically that an efficient coupling of 98% between the active and butt-jointed external waveguides is available by matching the propagation constants and the field profiles of both waveguides, which gives relatively larger fabrication tolerance. Prototype BJB-DBR integrated lasers with emitting wavelength of 1.55 μm were fabricated, and single-longitudinal-mode operation was obtained at room temperature.
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Parallel-coupled microstrip lines on pyrolytic boron nitride
60 GHz high-efficiency InP pulsed TEO
  • Author(s): I.G. Eddison ; I. Davies ; A.M. Howard ; D.M. Brookbanks
  • Source: Electronics Letters, Volume 17, Issue 25, p. 948 –949
  • DOI:  10.1049/el:19810663
  • Type: Article
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  • p. 948 –949 (2)
    The letter describes the fabrication and assessment of indium phosphide devices designed for high peak-power pulsed operation at millimetre-wave frequencies. The importance of the cathode contact properties for this device are discussed, together with brief details of the n-n+ material growth parameters. An outline of the device fabrication technology is given before the resultant device RF performance characteristics are presented. It is shown that peak output powers as high as 1.2 W and DC to RF conversion efficiencies of up to 12% can be realised at 60 GHz.
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Low-noise 10.7 GHz cooled GaAs FET amplifier
Planar normally-off GaAs JFET for high speed logic circuits
  • Author(s): Y. Kato ; M. Dohsen ; J. Kasahara ; K. Taira ; N. Watanabe
  • Source: Electronics Letters, Volume 17, Issue 25, p. 951 –952
  • DOI:  10.1049/el:19810665
  • Type: Article
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  • p. 951 –952 (2)
    Normally-off JFETs with 1.3 μm-long gates were fabricated by selective double ion implantation for the n and n+ regions and selective Zn diffusion for the p-gate area. A JFET with a 10 μm-wide gate had a transconductance of 2 mS in average and a high value of 3 mS. A 15 stage ring oscillator made of resistively loaded DCFLs showed the minimum delay time of 45 ps, the shortest value obtained based on optical lithography. The minimum power-delay product was 3.8 fJ with a delay time of 83 ps.
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Low threshold 1.55 μm InGaAsP lasers double clad with InGaAsP confining layers
Short-cavity single-mode 1.3 μm InGaAsP lasers with evaporated high-reflectivity mirrors
Shear-wave transducer using ferroelectric medium with distributed polarisation
  • Author(s): K. Yamanouchi
  • Source: Electronics Letters, Volume 17, Issue 25, p. 956 –957
  • DOI:  10.1049/el:19810668
  • Type: Article
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  • p. 956 –957 (2)
    A new type of transducer has been obtained for exciting only tangential displacement of a wave using an interdigital transducer. The device utilises a ferroelectric medium with a distributed polarisation caused by interdigital electrodes. An exciting interdigital electrode is located at the optimum position with respect to the polarisation pattern. Experimental results obtained with one such transducer are presented.
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Current dependence of temperature rise in CW operated GaInAsP/InP DH laser diodes
  • Author(s): P. Brosson  and  G.H.B. Thompson
  • Source: Electronics Letters, Volume 17, Issue 25, p. 957 –958
  • DOI:  10.1049/el:19810669
  • Type: Article
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  • p. 957 –958 (2)
    The current dependence of the temperature rise in CW double-heterostructure GaInAsP/InP lasers has been measured. The experimental data have been compared with values calculated assuming multiple heat sources and a quadratic dependence of the nonradiative component of injected current on the radiative component. The experimental data agree reasonably well with the theory and indicate that most of the heating is due to nonradiative recombination.
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Fundamental mode spot-size measurement in single-mode optical fibres
New approach to compact measurements on reflector antennas
  • Author(s): D.E.N. Davies  and  M.J. Withers
  • Source: Electronics Letters, Volume 17, Issue 25, p. 960 –961
  • DOI:  10.1049/el:19810671
  • Type: Article
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  • p. 960 –961 (2)
    The letter describes a novel scheme for very compact measurements on reflector antennas. The measurement configuration involves a plane reflector located just beyond (and parallel to) the aperture plane, so that radiated power is reflected and refocused back into the feed. Measurement of return loss can then give information on antenna efficiency and gain. The basic concept is described and its performance confirmed by means of experiments on a 10 ft (3.048 m) diameter reflector. Possible methods of extending the performance of the scheme are briefly discussed.
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Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm
  • Author(s): K. Utaka ; S. Akiba ; K. Sakai ; Y. Matsushima
  • Source: Electronics Letters, Volume 17, Issue 25, p. 961 –963
  • DOI:  10.1049/el:19810672
  • Type: Article
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  • p. 961 –963 (3)
    Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 1.0 Å/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.
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Simulation of FM/FDM blocks for interference and intermodulation calculations
Measurement of backscatter factor in single-mode fibres
Low threshold current CW operation of GaInAsP/InP buried heterostructure distributed Bragg-reflector integrated-twin-guide laser emitting at 1.5–1.6 μm
  • Author(s): T. Tanbun-ek ; S. Arai ; F. Koyama ; K. Kishino ; S. Yoshizawa ; T. Watanabe ; Y. Suematsu
  • Source: Electronics Letters, Volume 17, Issue 25, p. 967 –968
  • DOI:  10.1049/el:19810675
  • Type: Article
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  • p. 967 –968 (2)
    Low threshold current CW operation of a 1.5–1.6 μm-wavelength GaInAsP/InP buried heterostructure distributed Bragg reflector integrated twin guide (BH-DBR-ITG) laser was obtained up to 12°C. Single wavelength operation was obtained at a temperature range of 25 deg. The temperature dependence of lasing wavelength was 0.10 nm/deg. At 248 K, the threshold current, the differential quantum efficiency and the maximum output power were 37 mA, 16.3%/facet and 6 mW, respectively.
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High-speed frequency dividers with quasi-normally-off GaAs MESFETs
  • Author(s): F. Damay-Kavala ; G. Nuzillat ; C. Arnodo
  • Source: Electronics Letters, Volume 17, Issue 25, p. 968 –970
  • DOI:  10.1049/el:19810676
  • Type: Article
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  • p. 968 –970 (3)
    Master-slave binary frequency dividers have been designed and implemented with enhancement-mode GaAs MESFETs by using the so-called LPFL logic approach. A wide range of speed-power performances has been observed: a maximum toggle frequency of 2.8 GHz at P = 15 mW/gate on a dual-clocked frequency divider and an fc,max of 1.73 GHz at Pxtpd = 1 pJ/gate on a single-clocked one. The high-speed performance obtained corresponds to a propagation delay of 145 ps for the constituent NOR-OR gates of fan-in/fan-out = 4/3, and it is made possible by careful optimisation of circuit design parameters.
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Optical orthogonal pulse compression codes by hopping
500 MHz bandwidth guided wave L-band Bragg cell
Dispersive and scattering properties of a ZrF4 based glass
  • Author(s): H. Poignant
  • Source: Electronics Letters, Volume 17, Issue 25, p. 973 –974
  • DOI:  10.1049/el:19810679
  • Type: Article
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  • p. 973 –974 (2)
    In a previous letter we presented the material dispersion in a ZrF4 based fluoride glass. The zero crossover wavelength λc was found to occur between 1.6 and 1.7 μm. Here, we analyse the refractive index measurements against wavelength data in order to obtain some physical parameters of this material on which λc is dependent: electronic energy gap E0, electronic oscillator strength ED, lattice oscillator strength E1 and structure factor B. Such values, which are not yet known for fluoride glasses, will be then compared with those corresponding to SiO2 glass. Evaluation of the Rayleigh scattering coefficient will also be made.
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Simplified analysis of switched capacitor networks
Measurement of mutual scattering between spheres by use of microwave open resonator
Active compensation of op-amp inverting amplifier using NIC
Economic choice of component tolerances
Phase-plane analysis of simple Josephson junction model
Dipoles of finite length above stratified planar structures
Power dissipation on edges of coupled microstrip lines
Reverse ladder linear predictor
Erratum: Combined switched-capacitor FIR N-path filter using only grounded capacitors
Erratum: Hybrid modes of graded-index optical fibres

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