Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 17, Issue 14, 9 July 1981
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Volume 17, Issue 14
9 July 1981
Schottky-barrier elevation by ion implantation and implant segregation
- Author(s): R.L. Thornton
- Source: Electronics Letters, Volume 17, Issue 14, p. 485 –486
- DOI: 10.1049/el:19810337
- Type: Article
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–486
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PtSi Schottky barriers on n-type silicon have been formed with barrier heights up to 1 V, using a thin p-type interfacial layer for barrier elevation. The p-type layers are formed via shallow ion-implantation, followed by segregation to the metal-silicon interface when the silicide is formed. This results in extremely thin p-regions that enable the diodes to have near ideal forward current/voltage characteristics, with n-values of 1.02 to 1.04.
Cavity length dependence of differential quantum efficiency of GaInAsP/InP lasers
- Author(s): M. Asada ; K. Itoh ; Y. Suematsu ; S. Arai
- Source: Electronics Letters, Volume 17, Issue 14, p. 486 –487
- DOI: 10.1049/el:19810338
- Type: Article
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–487
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The cavity length dependence of the differential quantum efficiency ηd of 1.58 μm wavelength GaInAsP/InP buried heterostructure lasers was investigated theoretically and experimentally. Theoretical calculations of ηd taking intervalence band absorption into account is in agreement with the measured results, in which ηd increases with decreasing the cavity length. The maximum value of ηd obtained was 53% for the cavity length of 100 μm in pulsed operation at room temperature.
Observation of higher-order diffraction components in degenerate four-wave mixing experiments in Bi12GeO20 crystals
- Author(s): Y.H. Ja
- Source: Electronics Letters, Volume 17, Issue 14, p. 488 –489
- DOI: 10.1049/el:19810339
- Type: Article
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–489
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Higher-order diffraction components have been observed from the phase volume grating formed in photorefractive crystals Bi12GeO20 via degenerate four-wave mixing. Brief explanations based on the conventional grating theory and the dynamic theory of volume holography are given.
Estimation of time-varying co-ordinates of ion beams
- Author(s): W.J. Szajnowski
- Source: Electronics Letters, Volume 17, Issue 14, p. 489 –490
- DOI: 10.1049/el:19810340
- Type: Article
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–490
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A method is presented to estimate the time-varying co-ordinates of a continuous, low-energy ion beam. The method is noncontacting and exploits noise-like signals induced by the beam on electrostatic induction electrodes. Results of some preliminary experiments are also shown.
False-lock avoidance scheme for cost as loops
- Author(s): A. Makarios and T.C. Tozer
- Source: Electronics Letters, Volume 17, Issue 14, p. 490 –492
- DOI: 10.1049/el:19810341
- Type: Article
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–492
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A technique is described to avoid false lock in Costas loops, which gives a frequency offset at a multiple of the incoming data rate due to imperfect arm filters. Components of this offset are processed to augment the feedback control voltage, and it is shown how certain false-lock positions may be inhibited.
Efficiency and signal/noise ratio of short linear dipoles
- Author(s): T.S.M. Maclean and S.P.S. Saini
- Source: Electronics Letters, Volume 17, Issue 14, p. 492 –494
- DOI: 10.1049/el:19810342
- Type: Article
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The performance of inductively loaded dipoles as a function of coil loading position can be expressed either in terms of their efficiency or power gain, or alternatively in terms of their signal/noise ratio for different sky temperatures. The variation of power gain and efficiency with loading position differs from the corresponding variation of signal/noise ratio, and graphs illustrating the relation between signal/noise ratio and efficiency for any short dipole are provided for different sky temperatures.
Polarisation conservation in single-mode fibres
- Author(s): S. Machida ; J. Sakai ; T. Kimura
- Source: Electronics Letters, Volume 17, Issue 14, p. 494 –495
- DOI: 10.1049/el:19810343
- Type: Article
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–495
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There exist proper orthogonal elliptical polarisation states, which are maintained over long fibre length without converting. When one of the proper polarisation states is excited, orthogonal polarisation less than −40 dB is confirmed after 5 km single-mode fibre transmission. It is also proposed that twisted single-mode fibres show a high degree of polarisation for any incident polarisation state. The polarisation characteristics are hardly affected by external perturbations.
Interferometric measurement of dispersion of a single-mode optical fibre
- Author(s): W.D. Bomberger and J.J. Burke
- Source: Electronics Letters, Volume 17, Issue 14, p. 495 –496
- DOI: 10.1049/el:19810344
- Type: Article
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The methods of Fourier transform spectroscopy are applied to the measurement of the dispersion of short lengths of a single-mode optical fibre. The fibres used were one metre or less in length.
Comment: Equivalent network analysis of dielectric thin-film waveguide with trapezoidal cross-section
- Author(s): J. Buus
- Source: Electronics Letters, Volume 17, Issue 14, page: 497 –497
- DOI: 10.1049/el:19810345
- Type: Article
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Reply: Equivalent network analysis of dielectric thin-film waveguide with trapezoidal cross-section
- Author(s): M. Koshiba and M. Suzuki
- Source: Electronics Letters, Volume 17, Issue 14, page: 497 –497
- DOI: 10.1049/el:19810346
- Type: Article
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Time-dependent thermal effects in current-modulated semiconductor lasers
- Author(s): L. Goldberg ; H.F. Taylor ; J.F. Weller
- Source: Electronics Letters, Volume 17, Issue 14, p. 497 –499
- DOI: 10.1049/el:19810347
- Type: Article
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The temporal dependence of the frequency shift in a current-modulated single-mode semiconductor laser is measured and compared with calculations based on solutions to the thermal diffusion equation. The effects of carrier density change, thermal diffusion in the semiconductor, and heat sink thermal resistance are identified.
Modal noise in single-mode fibres operated slightly above cutoff
- Author(s): S. Heckmann
- Source: Electronics Letters, Volume 17, Issue 14, p. 499 –500
- DOI: 10.1049/el:19810348
- Type: Article
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If a single-mode fibre is operated slightly above the theoretical cutoff frequency, at every discontinuity like a misaligned joint, a part of the LP01-mode will be converted to the LP11-mode. At a following discontinuity, the LP11-mode will be partly reconverted to the LP01-mode, e.g. a source wavelength shift will then cause modal noise.
Comment: Voltage amplification in switched-capacitor networks
- Author(s): G.H.S. Rokos
- Source: Electronics Letters, Volume 17, Issue 14, page: 501 –501
- DOI: 10.1049/el:19810349
- Type: Article
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Reply: Voltage amplification in switched-capacitor networks
- Author(s): I. Cederbaum
- Source: Electronics Letters, Volume 17, Issue 14, page: 501 –501
- DOI: 10.1049/el:19810350
- Type: Article
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Static characteristic of a new quasiparticle injected superconducting weak link device
- Author(s): S. Sakai and H. Tateno
- Source: Electronics Letters, Volume 17, Issue 14, p. 501 –503
- DOI: 10.1049/el:19810351
- Type: Article
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A new superconducting weak link device is fabricated with a third electrode connected to the weak link part for injecting quasiparticles. Its static I/V characteristics are measured and a large current gain (12) is obtained. This value is excellent compared with any other Josephson switching device.
New technique for determination of static emitter and collector series resistances of bipolar transistors
- Author(s): W. Filensky and H. Beneking
- Source: Electronics Letters, Volume 17, Issue 14, p. 503 –504
- DOI: 10.1049/el:19810352
- Type: Article
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Starting with detailed investigations of the IC/VCE characteristics in the vicinity of the origin it is shown how the static emitter and collector series resistances of bipolar transistors can simply be determined using a curve tracer. Experimental results demonstrate the efficiency of this technique.
VIS-SC filters for higher clock frequency applications
- Author(s): J. Pandel and D. Herbst
- Source: Electronics Letters, Volume 17, Issue 14, p. 504 –506
- DOI: 10.1049/el:19810353
- Type: Article
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–506
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A method is described by which switched-capacitor filters employing voltage invertor switches can be designed using a two-phase clock. The resulting circuits are completely insensitive to bottom plate parasitics and the operating rate of the amplifiers is only twice the operating rate of the filter so that this method is suitable for higher clock frequency applications. Furthermore, the SC filters have low attenuation sensitivity to element variations, due to the one-to-one correspondence between the capacitors and the elements of the reference filter and owing to the fact that no matching is required between the network capacitors and the auxiliary hold capacitors.
Carrier-induced index change in AlGaAs double-heterostructure lasers
- Author(s): J.S. Manning and R. Olshansky
- Source: Electronics Letters, Volume 17, Issue 14, p. 506 –507
- DOI: 10.1049/el:19810354
- Type: Article
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–507
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A large carrier-induced index change is reported for conventional 8 μm-stripe oxide-isolated AlGaAs double-heterostructure lasers. At threshold, the index change of the active layer is −0.05 to −0.07, which is a factor of 5 to 10 larger than previously reported. It is accompanied by an even greater change in dispersion. These effects cannot be explained by a free-carrier effect, and are most likely caused by a carrier-induced shift of the absorption edge.
ZnO/SiO2-diaphragm composite resonator on a silicon wafer
- Author(s): K. Nakamura ; H. Sasaki ; H. Shimizu
- Source: Electronics Letters, Volume 17, Issue 14, p. 507 –509
- DOI: 10.1049/el:19810355
- Type: Article
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We report on a thickness-extensional-mode piezoelectric resonator consisting of a ZnO/SiO2 diaphragm supported by a silicon wafer. It is found that the temperature coefficient of frequency can be reduced to zero by adjusting the ZnO/SiO2 thickness ratio. A temperature coefficient of frequency as low as 10 ppm/°C was experimentally obtained.
Effects of finite operational amplifier gain-bandwidth product on a switched-capacitor amplifier
- Author(s): E. Sánchez-Sinencio ; J. Silva-Martinez ; R. Alba-Flores
- Source: Electronics Letters, Volume 17, Issue 14, p. 509 –510
- DOI: 10.1049/el:19810356
- Type: Article
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–510
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The effects of the finite operational amplifier gain-bandwidth product GB on the performance of an inverting switched-capacitor amplifier are presented. Limitations of the GB and the clock frequency fc=1/T as well as GB.T are determined.
Synthesis of single-amplifier switched-capacitor networks
- Author(s): J.J. Mulawka
- Source: Electronics Letters, Volume 17, Issue 14, p. 510 –512
- DOI: 10.1049/el:19810357
- Type: Article
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p.
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A new approach to synthesis of switched-capacitor networks containing operational amplifiers is given. The method starts with a signal flowgraph and, by the use of several transformations, a suitable structure is obtained which realises the given biquadratic transfer function. The procedure is straight-forward and flexible and is illustrated by an example.
Erratum: Self-tuned filters
- Author(s): Y. Tsivdis
- Source: Electronics Letters, Volume 17, Issue 14, page: 512 –512
- DOI: 10.1049/el:19810358
- Type: Article
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