Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 17, Issue 13, 25 June 1981
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Volume 17, Issue 13
25 June 1981
GaAs FET distributed amplifier
- Author(s): J.A. Archer ; F.A. Petz ; H.P. Weidlich
- Source: Electronics Letters, Volume 17, Issue 13, page: 433 –433
- DOI: 10.1049/el:19810303
- Type: Article
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The design and construction of a GaAs FET distributed amplifier with a bandwidth of 6 GHz is described The amplifier provides an input VSWR of less than 1.8:1 and noise figure of 3–6 dB The possibility of bandwidth extension is discussed.
Class AB CMOS amplifier micropower SC filters
- Author(s): F. Krummenacher ; E. Vittoz ; M. Degrauwe
- Source: Electronics Letters, Volume 17, Issue 13, p. 433 –435
- DOI: 10.1049/el:19810304
- Type: Article
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Properly biased CMOS invertors may be used as amplifiers in switched-capacitor filters. They are capable of fast settling and low noise at very low power. The principle of operation and three possible implementations are described.
Method for reducing coefficient sensitivity in lowpass CCD transversal filters
- Author(s): N. Kapur and S.C. Dutta Roy
- Source: Electronics Letters, Volume 17, Issue 13, p. 435 –437
- DOI: 10.1049/el:19810305
- Type: Article
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Charge-coupled-device (CCD) transversal filters are most commonly implemented using the split-electrode technique. Tap-weight accuracy is a major factor limiting the performance (stopband attenuation in particular) of these devices. In the letter an implementation technique is proposed which reduces this coefficient sensitivity and also offers other performance advantages.
70 MHz to 6 GHz FET up-convertor
- Author(s): P. Bura
- Source: Electronics Letters, Volume 17, Issue 13, page: 437 –437
- DOI: 10.1049/el:19810306
- Type: Article
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Performance of an MIC FET up-convertor shows 3.5 dB conversion gain from 70 MHz IF to 6 GHz output, with 0 dB conversion loss from the LO to the up-converted output. A 15 dBm output signal was measured from an FET capable of 21 dBm output in the amplifier circuit.
Measuring high-bandwidth fibres in the 1.3 μm region with picosecond InGaAsP injection lasers and ultrafast InGaAs detectors
- Author(s): C. Lin ; P.L. Liu ; T.P. Lee ; C.A. Burrus ; F.T. Stone ; A.J. Ritger
- Source: Electronics Letters, Volume 17, Issue 13, p. 438 –440
- DOI: 10.1049/el:19810307
- Type: Article
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We describe the use of state-of-theart picosecond (40 ps) injection lasers and ultrafast (30 ps) detectors for measuring high-bandwidth fibres in the 1.3 μm region. Two multimode graded-index MCVD fibres with bandwidths larger than 4 GHz-km were measured.
Attenuation statistics at 11.6 GHz from satellite SIRIO after three years' activity in Italy
- Author(s): M. Mauri and A. Paraboni
- Source: Electronics Letters, Volume 17, Issue 13, p. 440 –441
- DOI: 10.1049/el:19810308
- Type: Article
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Rain attenuation statistics based on SIRIO data at 11.6 GHz collected in three Italian stations are presented. The long-term probability distribution can be excellently fitted by a power law up to a 9 dB attenuation level.
Quarterwave microstrip antenna on a ferrimagnetic substrate
- Author(s): N. Das and J.S. Chatterjee
- Source: Electronics Letters, Volume 17, Issue 13, p. 441 –442
- DOI: 10.1049/el:19810309
- Type: Article
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Experiment conducted on a microstrip quarterwave antenna structure on a typical ferrite substrate reveals reduction in size, interesting radiation characteristics and a broadband nature over a wide range of frequencies in the lower UHF region.
Three period (Al,Ga)As/GaAs heterostructures with extremely high mobilities
- Author(s): T.J. Drummond ; W. Kopp ; H. Morkoç
- Source: Electronics Letters, Volume 17, Issue 13, p. 442 –444
- DOI: 10.1049/el:19810310
- Type: Article
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Selectively doped three period Al0.2Ga0.8As/GaAs structures have been grown by molecular beam epitaxy and characterised by Hall effect over a temperature range of 10 K–300 K. Electron mobilities as high as 211 000, 95 800 and 6700 cm2V−1s−1 have been obtained at 10 K, 78 K and 300 K, respectively. The total charge concentration in all the structures was about 2.25×1012 cm−2. These extremely high electron mobilities are a result of separating the donors and the electrons appreciably, and very-high-quality interfaces. To date, the figures at 78 K are the highest reported, while the 10 K figures are about twice the best previously reported results.
Effect of illumination and gate bias on flat-band voltage in plasma CVD Si-N on n-Si MIS structure
- Author(s): M.U. Jeong ; J. Shirafuji ; Y. Inuishi ; H. Yakushiji ; K. Harada ; H. Oka
- Source: Electronics Letters, Volume 17, Issue 13, p. 444 –446
- DOI: 10.1049/el:19810311
- Type: Article
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Remarkable effects of light illumination and/or negative gate bias on the capacitance/voltage characteristics of plasma CVD Si-N on n-Si structure are described. A qualitative model which can explain consistently the experimental results is briefly discussed.
SAWDIC: surfaceacoustic-wave-driven directional coupler
- Author(s): C.H. Von Helmolt ; H.F. Schlaak ; R.T. Kersten
- Source: Electronics Letters, Volume 17, Issue 13, p. 446 –447
- DOI: 10.1049/el:19810312
- Type: Article
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Optical directional couplers are driven by surfaceacoustic waves. Two effects can be distinguished: single and double frequency modulation. Experiments have been performed between 180 MHz and 430 MHz SAW frequency at light wavelength 0.633 μm with modulation depth up to 100%.
SAWDIF: surfaceacoustic-wave-driven interferometer
- Author(s): C.H. Von Helmolt
- Source: Electronics Letters, Volume 17, Issue 13, p. 447 –448
- DOI: 10.1049/el:19810313
- Type: Article
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Mach-Zehnder waveguide modulators are driven by surfaceacoustic waves (SAW). Frequency modulation is possible as well as optical mixing of two oppositely propagating SAWs Experiments have been performed between 20 MHz and 265 MHz SAW-frequency at light wavelength 0.633 μm. 20 mW acoustic power yields 1.2 rad of optical phase sweep.
Simple phase-locked loop with large pull-in range to noise bandwidth ratio
- Author(s): R.C. Halgren and I.R. Peterson
- Source: Electronics Letters, Volume 17, Issue 13, p. 448 –450
- DOI: 10.1049/el:19810314
- Type: Article
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The little-known sawtooth phase comparator is shown to display frequency discrimination, allowing its pull-in range to be orders of magnitude greater than its noise bandwidth.
Extremely low-noise MESFETs fabricated by metal-organic chemical vapour deposition
- Author(s): K. Kamei ; H. Kawasaki ; T. Chigira ; T. Nakanisi ; K. Kawabuchi ; M. Yoshimi
- Source: Electronics Letters, Volume 17, Issue 13, p. 450 –451
- DOI: 10.1049/el:19810315
- Type: Article
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Quarter-micron gate low-noise GaAs MESFETs have been developed by delineating gate electrodes by an electron-beam lithography technique and by using high-purity epiwafers prepared by a metal-organic-chemical vapour deposition (MOCVD) technique. At 18 GHz, a noise figure of 1.75 dB with an associated gain of 8.5 dB and a maximum available gain of 11 dB were obtained at drain currents of 10 mA and 30 mA, respectively. This is the lowest noise figure yet reported for low-noise GaAs MESFETs.
Ceramic components for optical-fibre systems
- Author(s): P. Mossman
- Source: Electronics Letters, Volume 17, Issue 13, p. 451 –452
- DOI: 10.1049/el:19810316
- Type: Article
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–452
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A technique is described for forming very long fine-bore capillaries in ceramic materials. These capillaries may be formed straight or curved. The technique appears to be of value in the fabrication of components for optical-fibre systems. Prototype components such as splices, connectors and couplers are described.
Distributed-index planar microlens array prepared from deep electromigration
- Author(s): M. Oikawa ; K. Iga ; T. Sanada
- Source: Electronics Letters, Volume 17, Issue 13, p. 452 –454
- DOI: 10.1049/el:19810317
- Type: Article
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Monolithic fabrication of a new distributed index planar microlens array by means of a deep electromigration technique in a glass substrate is reported. The array consists of distributed index lenses of 1.2 mm in diameter with 6.8 mm focal length. The focused spot is as small as 16 μm for λ=0.63 μm. The coupling efficiency of 60% to a multimode VAD fibre has been obtained.
Rigorous analysis of planar MIS transmission lines
- Author(s): P. Kennis and L. Faucon
- Source: Electronics Letters, Volume 17, Issue 13, p. 454 –456
- DOI: 10.1049/el:19810318
- Type: Article
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The realisation of distributed microwave integrated circuits can be expected by using very low phase velocity propagation modes on MIS and Schottky planar transmission lines. Up to now, the frequency behaviour of such lines has been obtained by using analytical models. We present a rigorous analysis of a MIS microstrip line, the validity of which is testified by comparison to experimental values.
Efficient calculation of multimode CPFSK spectra
- Author(s): L.F. Lind and A.A. De Albuquerque
- Source: Electronics Letters, Volume 17, Issue 13, p. 456 –457
- DOI: 10.1049/el:19810319
- Type: Article
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The letter shows how previously developed analytic formulas for spectral calculations can be extended to handle the multi-mode CPFSK case. The results are easily programmed, and give fast run times. A numerical example of this method is included.
Characteristics of field-effect transistor using fluorinated amorphous-silicon (a-Si:F)
- Author(s): H. Matsumura ; M. Kanamori ; S. Furukawa
- Source: Electronics Letters, Volume 17, Issue 13, p. 457 –458
- DOI: 10.1049/el:19810320
- Type: Article
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Thin-film field-effect transistors are fabricated by use of fluorinated amorphous-silicon alloy (a-Si:F) containing no hydrogen. The characteristics of transistors such as on-off current ratio are comparable to those of hydrogenated amorphous-silicon transistors and are unchanged after 600°C annealing.
Direct method of determining equivalent-step-index profiles for monomode fibres
- Author(s): C.A. Millar
- Source: Electronics Letters, Volume 17, Issue 13, p. 458 –460
- DOI: 10.1049/el:19810321
- Type: Article
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A new technique for measuring equivalent-step-index profiles of monomode fibres is presented which involves measuring the mode spot-size directly as a function of wavelength, and compares favourably with measured profiles. Since characterisation of the fibre is derived from easily measured optical properties, knowledge of the actual profile and the modelling of the propagation characteristics from it is unnecessary.
Adaptive noise cancellation with a SAW storage correlator
- Author(s): J.E. Bowers and G.S. Kino
- Source: Electronics Letters, Volume 17, Issue 13, p. 460 –461
- DOI: 10.1049/el:19810322
- Type: Article
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A Sezawa wave storage correlator was used to implement an adaptive filter for noise cancellation. The filter reduced the level of a 150 MHz CW jamming signal by 26 dB and a broadband Sezawa wave convolver was used to compress an underlying chirp signal. The tap weights are determined in 40 to 100 μs, depending on the jamming signal power and feedback gain.
Low-distortion high-output class B current convertor using error feedforward
- Author(s): B. Wilson
- Source: Electronics Letters, Volume 17, Issue 13, p. 461 –463
- DOI: 10.1049/el:19810323
- Type: Article
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–463
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A voltage-current convertor with over 1 A pp. output cability is described that produces very low distortion by using error feedforward around an unbiased class B output stage.
Effective minimum free distance for convolutional codes
- Author(s): H.F. Rashvand
- Source: Electronics Letters, Volume 17, Issue 13, p. 463 –465
- DOI: 10.1049/el:19810324
- Type: Article
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The minimum free distance (MFD) of convolutional error-correcting codes is a powerful and well-known parameter for indicating the behaviour of the communication system via an AWGN channel with medium and high SNR. But in many cases it happens that the MFD theory fails. The letter provides some examples where codes with a high MFD are being defeated by codes with lower MFD. Then a new method called the effective minimum free distance is introduced to achieve greater simplicity and to strengthen the MFD theory. Software simulation for some codes with constraint lengths 3 and 4 demonstrate this idea. The Viterbi decoding algorithm is used for the simulation program. The truncated generator function of a code is modified into a new, effective terms form that presents a very practical measure on the error correctability of the code.
V-grooved substrate buried heterostructure InGaAsP/InP laser
- Author(s): H. Ishikawa ; H. Imai ; T. Tanahashi ; Y. Nishitani ; M. Takusagawa ; K. Takahei
- Source: Electronics Letters, Volume 17, Issue 13, p. 465 –467
- DOI: 10.1049/el:19810325
- Type: Article
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A V-grooved substrate buried-heterostructure laser emitting at 1.3 μm wavelength is described. The active layer is buried in the V-shaped groove. A CW threshold current of 10~20 mA is obtained and a far-field pattern free from irregularity and peak shift is realised. Damped relaxation oscillation and stable aging characteristics are obtained.
Performance of an area variable MOS varicap weighted programmable CCD transversal filter
- Author(s): A.B. Bhattacharyya ; L. Shankarnarayan ; N. Kapur ; H. Wallinga
- Source: Electronics Letters, Volume 17, Issue 13, p. 467 –468
- DOI: 10.1049/el:19810326
- Type: Article
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The performance of an electrically programmable CCD transversal filter (PTF) is presented in which tap-weight multiplication is performed by a novel and compact on chip voltage controlled area variable MOS varicap.
Flash technique for GaAs concentrator solar cell measurement
- Author(s): E. Fanetti
- Source: Electronics Letters, Volume 17, Issue 13, p. 469 –470
- DOI: 10.1049/el:19810327
- Type: Article
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A flash-lamp testing technique for the measurement of GaAs concentrator solar cells is described. This method allows a simple and rapid evaluation of efficiency, series resistance and fill factor of the cell at high concentrations. A comparison with outdoor measurements is also reported.
Algorithm for finding the common spanning trees of two graphs
- Author(s): J.B. Grimbleby
- Source: Electronics Letters, Volume 17, Issue 13, p. 470 –471
- DOI: 10.1049/el:19810328
- Type: Article
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A new algorithm is described which finds the common spanning trees of two graphs efficiently and without duplication. The algorithm can be incorporated in a symbolic circuit analysis program where its speed and storage requirements are such that circuits of considerable complexity can be analysed on small computers.
GaAs read-type impatt diode for 130 GHz CW operation
- Author(s): K. Chang ; J.K. Kung ; P.G. Asher ; G.M. Hayashibara ; R.S. Ying
- Source: Electronics Letters, Volume 17, Issue 13, p. 471 –473
- DOI: 10.1049/el:19810329
- Type: Article
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A Schottky-barrier GaAs read-type impatt diode has been fabricated from the vapour-phase epitaxial material. CW oscillation at 130 GHz with an output of 5 mW and 0.5% efficiency has been achieved.
Low-loss single-polarisation fibres
- Author(s): T. Katsuyama ; H. Matsumura ; T. Suganuma
- Source: Electronics Letters, Volume 17, Issue 13, p. 473 –474
- DOI: 10.1049/el:19810330
- Type: Article
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Low-loss single-mode fibres that maintain polarisation well have been fabricated by the standard MCVD method. An extinction ratio of less than −30 dB at 1 km and a loss of 0.8 dB/km at 1.5 μm were achieved by the concentric circular germanosilicate core-clad fibres with the borosilicate elliptical jacket.
Positive impedance convertor suitable for high-frequency application
- Author(s): P. Horn
- Source: Electronics Letters, Volume 17, Issue 13, p. 474 –475
- DOI: 10.1049/el:19810331
- Type: Article
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A new PIC (positive impedance convertor) is presented which is very similar to the well-known Antoniou PIC. The new PIC is based on an allpass loop and allows the use of less critically compensated, high-frequency amplifiers.
Encoding of analogue signals using surfaceacoustic-wave chirp filters
- Author(s): M. Kowatsch ; J. Lafferl ; F. Ungersbäck ; F.J. Seifert
- Source: Electronics Letters, Volume 17, Issue 13, p. 475 –477
- DOI: 10.1049/el:19810332
- Type: Article
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A surfaceacoustic-wave chirp modem for analogue encoded transmission of signals in the frequency range from 200 Hz to 50 kHz was developed. Encoding is accomplished by sampling at 200 kHz and continuously varying the centre frequency of linear chirps according to the instantaneous signal value. In the receiver, a broadband compression filter yields a position-modulated pulse sequence. The dynamic range of the system is 50 dB.
Equivalent circuit of GaAs dual gate MESFETs
- Author(s): C. Tsironis and R. Meierer
- Source: Electronics Letters, Volume 17, Issue 13, p. 477 –479
- DOI: 10.1049/el:19810333
- Type: Article
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An equivalent circuit for GaAs dual gate MESFETs, valid for 2–11 GHz, and including 28 elements, has been derived from measured 3-port s-parameters. The bidimensional transfer characteristic of the device made possible separate microwave measurement of each FET part and determination of precise starting values for the optimisation.
2 Gbit/s optical transmission experiments at 1.3 μm with 44 km single-mode fibre
- Author(s): J.I. Yamada ; S. Machida ; T. Kimura
- Source: Electronics Letters, Volume 17, Issue 13, p. 479 –480
- DOI: 10.1049/el:19810334
- Type: Article
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GeAPD optical receiver sensitivity at 1.3 μm was studied up to 2 Gbit/s. High sensitivity of the receiver and a low coupling loss of 4 dB between a laser and a single-mode fibre achieved by a mocrolens made it possible to transmit 2 Gbit/s signals over a 44.3 km single-mode fibre. The optical receiving level was −29.4 dBm at a 10−9 error rate and no degradation occurred by fibre dispersion. The data rate by repeater spacing product of 88.6 (Gbit/s)·km was achieved at 1.3 μm.
Finite-element analysis of discontinuity problem of SH modes in an elastic plate waveguide
- Author(s): M. Koshiba ; H. Morita ; M. Suzuki
- Source: Electronics Letters, Volume 17, Issue 13, p. 480 –482
- DOI: 10.1049/el:19810335
- Type: Article
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A method for the solution of the discontinuity problem of SH modes in an elastic plate waveguide is described The approach is a combination of the finite-element and the analytical method. The results by this approach for the step discontinuity in a plate waveguide agree well with the results of the variational method.
Erratum: Acoustic properties of evaporated chalcogenide glass films
- Author(s): J. Kushibiki ; H. Maehara ; N. Chubachi
- Source: Electronics Letters, Volume 17, Issue 13, page: 482 –482
- DOI: 10.1049/el:19810336
- Type: Article
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