Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 16, Issue 8, 10 April 1980
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Volume 16, Issue 8
10 April 1980
Calculation method to obtain worst-case static noise margins of logic circuits
- Author(s): J. Lohstroh
- Source: Electronics Letters, Volume 16, Issue 8, p. 273 –274
- DOI: 10.1049/el:19800199
- Type: Article
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p.
273
–274
(2)
A relatively simple calculation method is introduced using the flip-flop method, and by using the criterion that, with marginal static noise applied to the flip-flop, the loopgain is 1. As an example, the worst-case static series voltage noise margin of I2L is calculated.
Hierarchical and parallel processing structure of two-dimensional systems
- Author(s): K.V.M. Fernando and H. Nicholson
- Source: Electronics Letters, Volume 16, Issue 8, p. 274 –275
- DOI: 10.1049/el:19800200
- Type: Article
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p.
274
–275
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Hierarchical and parallel processing structures are shown to exist in two-dimensional systems which could be exploited to develop fast algorithms.
GaxIn1−xAsy P1−y/InP d.h. laser emitting at 1.15 μm grown by low-pressure metalorganic c.v.d.
- Author(s): J.P. Hirtz ; J.P. Duchemin ; P. Hirtz ; B. de Cremoux ; T. Pearsall ; M. Bonnet
- Source: Electronics Letters, Volume 16, Issue 8, p. 275 –277
- DOI: 10.1049/el:19800201
- Type: Article
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p.
275
–277
(3)
We report the first successful operation of a GaxIn1−xAsy P1−y/InP double heterostructure laser grown by low-pressure metalorganic chemical vapour deposition. This broad-area contact laser, emitting at 1.15 μm, has a threshold current density of 5.9 kA/cm2 at room temperature. The efficiency of photoluminescence and electroluminescence below laser threshold is comparable to that measured in structures grown by liquid-phase epitaxy.
Integrated nonuniform thin-film bandpass filter
- Author(s): Kamal U. Ahmed and Hari R. Singh
- Source: Electronics Letters, Volume 16, Issue 8, p. 277 –278
- DOI: 10.1049/el:19800202
- Type: Article
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p.
277
–278
(2)
A set of performance characteristics for a two-port three-terminal bandpass filter configuration of the integrated thin-film exponential distributed-parameter R-C-KR microsystem is presented. The circuit is found to have frequency response which is almost independent of the load. The bandpass filter requirements are shown to be achieved by a suitable combination of the parameters of the micro-system structure.
Role of substrate in electrical properties of GaAs implanted layers
- Author(s): G.M. Martin ; M. Berth ; C. Venger
- Source: Electronics Letters, Volume 16, Issue 8, p. 278 –279
- DOI: 10.1049/el:19800203
- Type: Article
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p.
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–279
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The variation of implantation efficiency in different semi-insulating GaAs materials is shown to be correlated with he purity of the starting substrate, i.e. its Cr concentration and more especially its value of ND–NA (shallow levels). This last value appears to be a key parameter in the electrical properties of implanted layers.
Transmission properties of 30.4 km v.a.d. fibre
- Author(s): Shoichi Sudo ; Hisaaki Okazaki ; Motohiro Nakahara ; Masaharu Horiguchi
- Source: Electronics Letters, Volume 16, Issue 8, p. 280 –281
- DOI: 10.1049/el:19800204
- Type: Article
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p.
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–281
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A 30.4 km graded-index fibre has been fabricated by the vapour-phase axial deposition (v.a.d.) method. Optical-time-domain reflectometry was used to characterise the loss uniformity along the longitudinal direction of this fibre. Measured transmission loss and 6 dB bandwidth with good uniformity along this long fibre were 0.54 dB/km and 1200 MHzkm at the 1.3 μm wavelength, respectively.
Moulded multifibre connectors using rectangular multirod arrangement
- Author(s): T. Satake and H. Murata
- Source: Electronics Letters, Volume 16, Issue 8, p. 281 –282
- DOI: 10.1049/el:19800205
- Type: Article
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p.
281
–282
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Moulded demountable compact multifibre connectors have been constructed which have a rectangular arrangement of precision rods within the plug mouldings to locate the fibres in its interstices and to align pairs of plugs. The samples of 10-fibre connector tested so far have exhibited average insertion loss of 0.37 dB for step-index fibre 60 μm in core diameter. Connectors for an arbitrary number of fibres can be made from the same mould and parts by using this method.
Mobility of holes in the quaternary alloy In1−xGaxAsyP1−y
- Author(s): J.R. Hayes ; A.R. Adams ; P.D. Greene
- Source: Electronics Letters, Volume 16, Issue 8, p. 282 –284
- DOI: 10.1049/el:19800206
- Type: Article
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p.
282
–284
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Hole mobilities have been measured at temperatures from 77 to 300 K in a wide range of quaternary alloys grown lattice-matched to InP substrates by liquid-phase epitaxy. Over most of the composition range the hole mobility at room temperature is lower than in InP itself, and is dominated by alloy scattering.
C.W. operation of AlxGa1−xAs/AlyGa1−yAs lasers grown by metalorganic c.v.d. in wavelength range 760~780 nm
- Author(s): Yoshifumi Mori and Naozo Watanabe
- Source: Electronics Letters, Volume 16, Issue 8, p. 284 –285
- DOI: 10.1049/el:19800207
- Type: Article
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p.
284
–285
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Room-temperature c.w. operation of AlxGa1−xAs/AlyGa1−yAs d.h. structure visible (760~780 nm) lasers grown by metalorganic c.v.d. has been achieved. The planar structure lasers, with an oxide-insulated ~10 μm stripe and a cavity length of ~250 μm, showed c.w. threshold currents from 150 to 300 mA.
New bilinear switched-capacitor immittance convertor circuit
- Author(s): T. Inoue and F. Ueno
- Source: Electronics Letters, Volume 16, Issue 8, p. 285 –286
- DOI: 10.1049/el:19800208
- Type: Article
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p.
285
–286
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A new switched-capacitor immittance convertor circuit is proposed which enables the conversion of the capacitive (n+1)-terminal networks into the corresponding bilinearly equivalent inductive (n+1)-terminal networks. The proposed immittance converter circuit requires only two operational amplifiers and five capacitors.
Comparison of G/T between dual-reflector and primary-focus antennas
- Author(s): G.L. James and B.MacA. Thomas
- Source: Electronics Letters, Volume 16, Issue 8, p. 286 –288
- DOI: 10.1049/el:19800209
- Type: Article
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p.
286
–288
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Cassegrain operation of moderate-sized antennas at low frequencies often poses difficulties because of the large feed horn required. Primary-focus operation using a two-hybrid-mode feed horn is shown to give a G/T ratio close to that provided by classical Cassegrain operation using a single-hybrid-mode feed.
New realisation of maximum likelihood receiver for low-angle tracking radar
- Author(s): S. Haykin ; J. Reilly ; D. Taylor
- Source: Electronics Letters, Volume 16, Issue 8, p. 288 –289
- DOI: 10.1049/el:19800210
- Type: Article
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p.
288
–289
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A new realisation of the maximum likelihood receiver is presented for resolving the effect of multipath in a low-angle tracking radar. Results are included to confirm the validity of this receiver structure.
Power spectra of HDBn signals
- Author(s): D. Drajić and G. Petrović
- Source: Electronics Letters, Volume 16, Issue 8, p. 289 –291
- DOI: 10.1049/el:19800211
- Type: Article
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p.
289
–291
(3)
The general formula for the power spectrum of an HDBn signal is derived, valid for any n and for any probability of ones in the input binary sequence.
Petri net approach to enumerate all simple paths in a graph
- Author(s): Ali Athar Khan and Harpreet Singh
- Source: Electronics Letters, Volume 16, Issue 8, p. 291 –292
- DOI: 10.1049/el:19800212
- Type: Article
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p.
291
–292
(2)
A technique utilising the concept of reachability in a Petri net is proposed to enumerate all simple paths between two specified nodes of a graph. It is simple and requires little computation.
Analysis of geodesic lenses by beam propagation method
- Author(s): J. van der Donk and P.E. Lagasse
- Source: Electronics Letters, Volume 16, Issue 8, p. 292 –294
- DOI: 10.1049/el:19800213
- Type: Article
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p.
292
–294
(3)
It is shown that geodesic lenses can be analysed by means of the propagating beam method. This method allows one to take diffraction effects and anisotropy into account, while requiring only a moderate amount of computer time. To illustrate the method, a few geodesic lenses are analysed.
Novel two-o.a. three-resistor variable phase inverting amplifier
- Author(s): A.M. Soliman
- Source: Electronics Letters, Volume 16, Issue 8, p. 294 –295
- DOI: 10.1049/el:19800214
- Type: Article
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p.
294
–295
(2)
A new active phase-compensated inverting amplifier is proposed. The amplifier circuit employs two o.a.s and three resistors and has an infinite input impedance. The proposed amplifier is also suitable for phase correction in two-integrator loop filters.
Characterisation of multiple-scan electron beam annealing method
- Author(s): R.A. McMahon ; H. Ahmed ; R.M. Dobson ; J.D. Speight
- Source: Electronics Letters, Volume 16, Issue 8, p. 295 –297
- DOI: 10.1049/el:19800215
- Type: Article
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p.
295
–297
(3)
Beam power per unit area and exposure time are the predominant factors in defining implant anneal conditions for the multiple scan electron beam annealing technique. A theoretical analysis is presented which agrees with experimental results. Carrier concentration profiles confirm that the implant becomes electrically active without diffusion.
Micrometre-gate m.e.s.f.e.t.s on laser-annealed polysilicon
- Author(s): J. Barnard ; J. Frey ; K.F. Lee ; J.F. Gibbons
- Source: Electronics Letters, Volume 16, Issue 8, p. 297 –298
- DOI: 10.1049/el:19800216
- Type: Article
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p.
297
–298
(2)
Schottky-barrier field-effect transistors (m.e.s.f.e.t.s) have been fabricated on uniformly doped laser-annealed polycrystalline silicon deposited on a silicon nitride insulator. The devices, which had aluminium Schottky-barrier gates and diffused n+ sources and drains but nonoptimised channel profiles, had about 65% the gm values of similar but optimised devices made on s.o.s. layers. Performance of these devices is considered adequate for certain innovative integrated-circuit technologies.
Deduction of amplifier phase transfer characteristic from measured a.m./p.m. conversion-coefficient characteristic
- Author(s): M.T. Abuelma'atti and J.G. Gardiner
- Source: Electronics Letters, Volume 16, Issue 8, p. 298 –300
- DOI: 10.1049/el:19800217
- Type: Article
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p.
298
–300
(3)
Amplifier phase nonlinearity is usually measured experimentally as a number of degrees per decibel with respect to input power, but for spectrum computation a phase transfer characteristic is required. A convenient transformation technique is described.
Bipolar operation of power junction field effect transistors
- Author(s): B.Jayant Baliga
- Source: Electronics Letters, Volume 16, Issue 8, p. 300 –301
- DOI: 10.1049/el:19800218
- Type: Article
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p.
300
–301
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Bipolar-mode power j.f.e.t. operation is demonstrated to result in a significant improvement in the on resistance, especially for high-voltage devices. Theoretical analysis and experimental data show that the on resistance varies inversely as the square root of the gate current. High-speed switching in this mode has also been achieved.
Temporal frequency dependence of modal noise in fibres
- Author(s): E.G. Rawson ; R.E. Norton ; J.W. Goodman
- Source: Electronics Letters, Volume 16, Issue 8, p. 301 –303
- DOI: 10.1049/el:19800219
- Type: Article
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p.
301
–303
(3)
For a particular source and fibre, frequency correlation effects determine speckle contrast. For a specified degree of spatial filtration, speckle contrast in turn determines modal noise statistics. The measurement and analysis is reported of the correlation of two multimode fibre speckle patterns as a function of their source frequency difference.
Reconvergence phenomenon in synchronous sequential circuits
- Author(s): N.K. Nanda and R.G. Bennetts
- Source: Electronics Letters, Volume 16, Issue 8, p. 303 –304
- DOI: 10.1049/el:19800220
- Type: Article
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p.
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–304
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The letter essentially explains the concepts of the fan-out reconvergence phenomenon as applied to synchronous sequential circuits. The influence of memory logic values and time dependence of reconvergence phenomena has been considered and is explained by suitable illustrative examples.
Error performance of frequency-hopped d.p.s.k. system
- Author(s): Kenji Yamada and Kazuhiro Daikoku
- Source: Electronics Letters, Volume 16, Issue 8, p. 305 –306
- DOI: 10.1049/el:19800221
- Type: Article
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p.
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–306
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In order to accurately evaluate bit error rates for a frequency-hopped d.p.s.k. system, digital computer experiments were performed. The value of Eb/N0 at the 10−3 error rate without fading was 8.4 dB.
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