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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 16, Issue 2, 17 January 1980

Volumes & issues:

Volume 16, Issue 2

17 January 1980

Effectiveness of charged vacancies in diffusion of implanted boron in silicon
High transformation ratio for impedance matching with a radial line
More about a thinning algorithm
  • Author(s): C. Arcelli ; L.P. Cordella ; S. Levialdi
  • Source: Electronics Letters, Volume 16, Issue 2, p. 51 –53
  • DOI:  10.1049/el:19800039
  • Type: Article
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  • p. 51 –53 (3)
    The characteristics of the parallel operations exploited by a thinning algorithm presented by the authors in the past are considered. A new arrangement both of the masks implementing such operations and of their order of application is shown, which originates transformed figures having a number of branches greater than before. The present algorithm seems to be more helpful than standard thinning algorithms, when problems of figure discrimination are to be faced.
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Technique for performing multiplication on a 16-bit microprocessor using an extension of Booth's algorithm
  • Author(s): E. Ambikairajah  and  M.J. Carey
  • Source: Electronics Letters, Volume 16, Issue 2, p. 53 –54
  • DOI:  10.1049/el:19800040
  • Type: Article
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  • p. 53 –54 (2)
    Multiplication of a 2's-complement number by a known coefficient is often required in digital signal processing and other applications. When this is required to be performed on a microprocessor, an extension of Booth's algorithm (e.b.a.) can be used. Examples are presented to demonstrate how the multiplication is performed using e.b.a. on a microprocessor, and comparisons are made with the machine multiply instruction (m.m.i.) which show that the e.b.a. can take significantly less machine time.
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Pulsed electron-beam annealing of phosphorus-implanted silicon
  • Author(s): T. Inada ; T. Sugiyama ; N. Okano ; Y. Ishikawa
  • Source: Electronics Letters, Volume 16, Issue 2, p. 54 –55
  • DOI:  10.1049/el:19800041
  • Type: Article
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  • p. 54 –55 (2)
    Electrical properties of phosphorus-implanted silicon annealed by a single shot of a high-power pulsed electron beam have been studied by differential Hall-effect and sheet-resistivity measurements. Nearly 100% electrical activation of implanted phosphorus can be obtained after electron-beam annealing at an incident energy density of 0.92 J/cm2. Uniformly distributed carrier concentration profiles have been formed by electron-beam annealing.
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Properties of a simple noise-sequence generator
1.6 Gbit/s optical receiver at 1.3 μm with SAW timing retrieval circuit
  • Author(s): Jun-Ichi Yamada ; Jiro Temmyo ; Shokichiro Yoshikawa ; Tatsuya Kimura
  • Source: Electronics Letters, Volume 16, Issue 2, p. 57 –58
  • DOI:  10.1049/el:19800043
  • Type: Article
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  • p. 57 –58 (2)
    The performance of a 1.6 Gbit/s optical receiver employing a s.a.w. filter as a timing tank is reported. The error-rate characteristics in a p.c.m. transmission system using a 1.3 μm In-GaAsP laser and single-mode fibres were studied. The average received optical power at a 10−9 error rate was −28 dBm. In a 15 km transmission experiment, the receiving level was degraded by 2 dB owing to fibre dispersion. Timing phase margin of 75 degrees after 12 km transmission was confined with the self-timed receiver.
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Optical memory readout by superluminescent diode with integrated photodetector
Maximisation of signal/noise ratio in array with broadened zero
Novel sinusoidal oscillator employing grounded capacitors
  • Author(s): Raj Senani
  • Source: Electronics Letters, Volume 16, Issue 2, p. 62 –63
  • DOI:  10.1049/el:19800046
  • Type: Article
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  • p. 62 –63 (2)
    An earlier single-resistance-controlled oscillator (s.r.c.o.) with grounded capacitors employs three operational amplifiers (o.a.); the new s.r.c.o. proposed here employs only two o.a.s and a reduced number of resistors. The proposed s.r.c.o. may be adopted for voltage-controlled-oscillator realisation. In addition, the new circuit may also be employed for the generation of very-low-frequency oscillations. The circuit appears to be suitable for integrated-circuit implementation.
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Switched-capacitor biquads based on switched-capacitor transconductance
Error-rate measurements for s.f.s.k. with band limitation
Temperature dependence of storage time in silicon p+-n-n+ switching diodes and reduction of harmonic distortion
Uplink adaptive depolarisation cancellation in a ground-to-satellite link
p-i-n/f.e.t. hybrid optical receiver for longer-wavelength optical communication systems
Investigations on a new force-frequency measuring gauge
Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy
  • Author(s): A.Y. Cho ; H.C. Casey ; C. Radice ; P.W. Foy
  • Source: Electronics Letters, Volume 16, Issue 2, p. 72 –74
  • DOI:  10.1049/el:19800053
  • Type: Article
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  • p. 72 –74 (3)
    The effect on threshold current density Jth of the use of an air-lock sample-exchange mechanism, substrate preparation and Al source purity was investigated for GaAs-Al0.27 Ga0.73 As double-heterostructure lasers grown by molecular-beam epitaxy (m.b.e.). The conditions necessary to prepare m.b.e. wafers that give Jth as low as for wafers prepared by liquid-phase epitaxy (Jth ≈ 1 × 103 A/cm2 for an active layer thickness of 0.1 μm) are summarised.
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Comment: Transfer functions with equiripple passband and very low Q-factor for economical active filters
Erratum: E.I.R.P. allocation for a nonlinear satellite channel with multiple transmit beams and carriers
Erratum: Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm
Erratum: Analysis and measurement of modal noise in an optical fibre
Erratum: Modal dispersion of optical fibres with a composite α-profile graded-index core

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