Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 16, Issue 2, 17 January 1980
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 16, Issue 2
17 January 1980
Effectiveness of charged vacancies in diffusion of implanted boron in silicon
- Author(s): Runovc Franc
- Source: Electronics Letters, Volume 16, Issue 2, p. 49 –50
- DOI: 10.1049/el:19800037
- Type: Article
- + Show details - Hide details
-
p.
49
–50
(2)
A method is proposed to obtain the temperature dependence of the index of effectiveness of charged vacancies relative to neutral ones in boron diffusion in silicon from an implanted source. The temperature dependence compares favourably with some theoretical results and enables the inclusion of third order-effects in processing simulation programs.
High transformation ratio for impedance matching with a radial line
- Author(s): K.-H. Döring and E. Seebald
- Source: Electronics Letters, Volume 16, Issue 2, p. 50 –51
- DOI: 10.1049/el:19800038
- Type: Article
- + Show details - Hide details
-
p.
50
–51
(2)
A description is given of impedance matching by means of radial lines mounted in a rectangular waveguide. It is shown that low-loss high-resistance transformation ratios of up to 1:300 are suited for matching active microwave semiconductor devices.
More about a thinning algorithm
- Author(s): C. Arcelli ; L.P. Cordella ; S. Levialdi
- Source: Electronics Letters, Volume 16, Issue 2, p. 51 –53
- DOI: 10.1049/el:19800039
- Type: Article
- + Show details - Hide details
-
p.
51
–53
(3)
The characteristics of the parallel operations exploited by a thinning algorithm presented by the authors in the past are considered. A new arrangement both of the masks implementing such operations and of their order of application is shown, which originates transformed figures having a number of branches greater than before. The present algorithm seems to be more helpful than standard thinning algorithms, when problems of figure discrimination are to be faced.
Technique for performing multiplication on a 16-bit microprocessor using an extension of Booth's algorithm
- Author(s): E. Ambikairajah and M.J. Carey
- Source: Electronics Letters, Volume 16, Issue 2, p. 53 –54
- DOI: 10.1049/el:19800040
- Type: Article
- + Show details - Hide details
-
p.
53
–54
(2)
Multiplication of a 2's-complement number by a known coefficient is often required in digital signal processing and other applications. When this is required to be performed on a microprocessor, an extension of Booth's algorithm (e.b.a.) can be used. Examples are presented to demonstrate how the multiplication is performed using e.b.a. on a microprocessor, and comparisons are made with the machine multiply instruction (m.m.i.) which show that the e.b.a. can take significantly less machine time.
Pulsed electron-beam annealing of phosphorus-implanted silicon
- Author(s): T. Inada ; T. Sugiyama ; N. Okano ; Y. Ishikawa
- Source: Electronics Letters, Volume 16, Issue 2, p. 54 –55
- DOI: 10.1049/el:19800041
- Type: Article
- + Show details - Hide details
-
p.
54
–55
(2)
Electrical properties of phosphorus-implanted silicon annealed by a single shot of a high-power pulsed electron beam have been studied by differential Hall-effect and sheet-resistivity measurements. Nearly 100% electrical activation of implanted phosphorus can be obtained after electron-beam annealing at an incident energy density of 0.92 J/cm2. Uniformly distributed carrier concentration profiles have been formed by electron-beam annealing.
Properties of a simple noise-sequence generator
- Author(s): W. Freeman and S.M. Hebden
- Source: Electronics Letters, Volume 16, Issue 2, p. 55 –57
- DOI: 10.1049/el:19800042
- Type: Article
- + Show details - Hide details
-
p.
55
–57
(3)
A simple digital circuit, the sequentially masked m̅-sequence generator, has been investigated as a source of noise. Analytical results are presented for the statistics of pulses (runs of 1) and the principal experimental results are presented for the statistics of gaps (runs of 0).
1.6 Gbit/s optical receiver at 1.3 μm with SAW timing retrieval circuit
- Author(s): Jun-Ichi Yamada ; Jiro Temmyo ; Shokichiro Yoshikawa ; Tatsuya Kimura
- Source: Electronics Letters, Volume 16, Issue 2, p. 57 –58
- DOI: 10.1049/el:19800043
- Type: Article
- + Show details - Hide details
-
p.
57
–58
(2)
The performance of a 1.6 Gbit/s optical receiver employing a s.a.w. filter as a timing tank is reported. The error-rate characteristics in a p.c.m. transmission system using a 1.3 μm In-GaAsP laser and single-mode fibres were studied. The average received optical power at a 10−9 error rate was −28 dBm. In a 15 km transmission experiment, the receiving level was degraded by 2 dB owing to fibre dispersion. Timing phase margin of 75 degrees after 12 km transmission was confined with the self-timed receiver.
Optical memory readout by superluminescent diode with integrated photodetector
- Author(s): M.-C. Amann ; A. Kuschmider ; J. Boeck
- Source: Electronics Letters, Volume 16, Issue 2, p. 58 –60
- DOI: 10.1049/el:19800044
- Type: Article
- + Show details - Hide details
-
p.
58
–60
(3)
A superluminescent diode (s.l.d.) simultaneously operating as light source and light amplifier has been for the first time integrated monolithically with a photodetector. Experimental results are presented demonstrating the applicability of this device for optical memory readout.
Maximisation of signal/noise ratio in array with broadened zero
- Author(s): P.C.K. Kwok and P.S. Brandon
- Source: Electronics Letters, Volume 16, Issue 2, p. 60 –62
- DOI: 10.1049/el:19800045
- Type: Article
- + Show details - Hide details
-
p.
60
–62
(3)
A technique for synthesising a maximally-flat zero in antenna array while maximising the signal/noise ratio is described. It is shown that the optimum radiation pattern consists of a main beam, a cancellation beam and its pattern derivatives. The properties and characteristics of the pattern are also discussed.
Novel sinusoidal oscillator employing grounded capacitors
- Author(s): Raj Senani
- Source: Electronics Letters, Volume 16, Issue 2, p. 62 –63
- DOI: 10.1049/el:19800046
- Type: Article
- + Show details - Hide details
-
p.
62
–63
(2)
An earlier single-resistance-controlled oscillator (s.r.c.o.) with grounded capacitors employs three operational amplifiers (o.a.); the new s.r.c.o. proposed here employs only two o.a.s and a reduced number of resistors. The proposed s.r.c.o. may be adopted for voltage-controlled-oscillator realisation. In addition, the new circuit may also be employed for the generation of very-low-frequency oscillations. The circuit appears to be suitable for integrated-circuit implementation.
Switched-capacitor biquads based on switched-capacitor transconductance
- Author(s): S.M. Faruque ; J. Vlach ; T.R. Viswanathan
- Source: Electronics Letters, Volume 16, Issue 2, p. 63 –64
- DOI: 10.1049/el:19800047
- Type: Article
- + Show details - Hide details
-
p.
63
–64
(2)
A switched-capacitor second-order building block based on switched-capacitor transconductance is presented. All types of transfer functions, e.g. lowpass, bandpass, highpass, and bandstop are possible and experimental results are presented.
Error-rate measurements for s.f.s.k. with band limitation
- Author(s): H. Singh and T.T. Tjhung
- Source: Electronics Letters, Volume 16, Issue 2, p. 64 –66
- DOI: 10.1049/el:19800048
- Type: Article
- + Show details - Hide details
-
p.
64
–66
(3)
The error rates of s.f.s.k. with matched-filter detection were measured under restricted bandwidth conditions. The Eb/N0 degradations from the ideal b.p.s.k. performance were determined as a function of the degree of band limitation. Results for both Gaussian and Butterworth filters are presented.
Temperature dependence of storage time in silicon p+-n-n+ switching diodes and reduction of harmonic distortion
- Author(s): Arye Rosen ; Ramon U. Martinelli ; Martin Caulton
- Source: Electronics Letters, Volume 16, Issue 2, p. 66 –68
- DOI: 10.1049/el:19800049
- Type: Article
- + Show details - Hide details
-
p.
66
–68
(3)
Using the reverse-recovery technique, storage times in p+-n-n+ diodes have been measured as a function of temperature. In all cases the effective lifetime for injected charge increases with increasing temperature within the interval 0 to 180°C. This result was found to reduce second-harmonic distortion in p+-n-n+ switches by as much as 6 dB at 2.5 MHz.
Uplink adaptive depolarisation cancellation in a ground-to-satellite link
- Author(s): M. Nouri and M.R. Braine
- Source: Electronics Letters, Volume 16, Issue 2, p. 68 –69
- DOI: 10.1049/el:19800050
- Type: Article
- + Show details - Hide details
-
p.
68
–69
(2)
An adaptive depolarisation cancellation method to reduce the uplink depolarised signal in future satellite systems is described. It is based on transmission of a small orthogonally polarised correction signal from the earth station. A data-acquisition method using only a single beacon signal transmitted from the satellite could provide the information required for generation of the correction signal.
p-i-n/f.e.t. hybrid optical receiver for longer-wavelength optical communication systems
- Author(s): D.R. Smith ; R.C. Hooper ; K. Ahmad ; D. Jenkins ; A.W. Mabbitt ; R. Nicklin
- Source: Electronics Letters, Volume 16, Issue 2, p. 69 –71
- DOI: 10.1049/el:19800051
- Type: Article
- + Show details - Hide details
-
p.
69
–71
(3)
Preliminary results are reported on the first GaInAs p-i-n/f.e.t. hybrid optical receiver for longer-wavelength optical communication systems. The GaInAs photodiode has a capacitance of 0.3 pF and quantum efficiency of 25%, and gives a receiver sensitivity for a 140 Mbit/s n.r.z. system at 1.24 μm of −40.7 dBm for a 10−9 error rate.
Investigations on a new force-frequency measuring gauge
- Author(s): K. Grantcharov ; M. Borissov ; D. Detchev ; L. Spassov ; E. Yossifov
- Source: Electronics Letters, Volume 16, Issue 2, p. 71 –72
- DOI: 10.1049/el:19800052
- Type: Article
- + Show details - Hide details
-
p.
71
–72
(2)
A force-frequency measuring gauge is realised on the basis of an oscillating quartz crystal plate. Two solutions to the problem of constructing a hermetic enclosure are described. The resulting force-frequency characteristics are shown. The possibility for utilising this kind of transducer in practice is therefore demonstrated.
Influence of growth conditions on the threshold current density of double-heterostructure lasers prepared by molecular-beam epitaxy
- Author(s): A.Y. Cho ; H.C. Casey ; C. Radice ; P.W. Foy
- Source: Electronics Letters, Volume 16, Issue 2, p. 72 –74
- DOI: 10.1049/el:19800053
- Type: Article
- + Show details - Hide details
-
p.
72
–74
(3)
The effect on threshold current density Jth of the use of an air-lock sample-exchange mechanism, substrate preparation and Al source purity was investigated for GaAs-Al0.27 Ga0.73 As double-heterostructure lasers grown by molecular-beam epitaxy (m.b.e.). The conditions necessary to prepare m.b.e. wafers that give Jth as low as for wafers prepared by liquid-phase epitaxy (Jth ≈ 1 × 103 A/cm2 for an active layer thickness of 0.1 μm) are summarised.
Comment: Transfer functions with equiripple passband and very low Q-factor for economical active filters
- Author(s): M. Biey and A. Premoli
- Source: Electronics Letters, Volume 16, Issue 2, page: 74 –74
- DOI: 10.1049/el:19800054
- Type: Article
- + Show details - Hide details
-
p.
74
(1)
Erratum: E.I.R.P. allocation for a nonlinear satellite channel with multiple transmit beams and carriers
- Author(s): J. Arnbak
- Source: Electronics Letters, Volume 16, Issue 2, page: 75 –75
- DOI: 10.1049/el:19800055
- Type: Article
- + Show details - Hide details
-
p.
75
(1)
Erratum: Single-mode c.w. ridge-waveguide laser emitting at 1.55 μm
- Author(s): I.P. Kaminow ; R.E. Nahory ; M.A. Pollack ; L.W. Stulz ; J.C. Dewinter
- Source: Electronics Letters, Volume 16, Issue 2, page: 75 –75
- DOI: 10.1049/el:19800056
- Type: Article
- + Show details - Hide details
-
p.
75
(1)
Erratum: Analysis and measurement of modal noise in an optical fibre
- Author(s): B. Daino ; G. de Marchis ; S. Piazzola
- Source: Electronics Letters, Volume 16, Issue 2, page: 75 –75
- DOI: 10.1049/el:19800057
- Type: Article
- + Show details - Hide details
-
p.
75
(1)
Erratum: Modal dispersion of optical fibres with a composite α-profile graded-index core
- Author(s): A. Weiekholt
- Source: Electronics Letters, Volume 16, Issue 2, page: 75 –75
- DOI: 10.1049/el:19800058
- Type: Article
- + Show details - Hide details
-
p.
75
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article