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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 15, Issue 9, 26 April 1979

Volumes & issues:

Volume 15, Issue 9

26 April 1979

Variable-centre-frequency constant-bandwidth linear-phase digital bandpass filters
V.P.E. GaAs m.e.s.f.e.t. structure using oxygen injection during buffer layer growth
Hole traps in n-InP by d.l.t.s. and transient capacitance techniques
Recursive formulae for ladder-network optimisation
  • Author(s): E. Olcayto
  • Source: Electronics Letters, Volume 15, Issue 9, p. 249 –250
  • DOI:  10.1049/el:19790176
  • Type: Article
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  • p. 249 –250 (2)
    The analysis, the gradient and the Hessian matrix of a ladder-network structure may be derived precisely from a family recursive formulae. The method is well suited to computer programming and extremely efficient computationally. The formulae might be included in a c.a.d. programme as a self-contained block and may be used to solve optimisation problems of certain ladder networks employing Newton-Raphson techniques.
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Low-noise optical detection of a 1.1 Gb/s optical data stream
  • Author(s): S.M. Abbott  and  W.M. Muska
  • Source: Electronics Letters, Volume 15, Issue 9, p. 250 –251
  • DOI:  10.1049/el:19790177
  • Type: Article
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  • p. 250 –251 (2)
    A low-noise, 1.1 Gb/s optical receiver has been built using a silicon a.p.d. and a GaAs f.e.t. The receiver sensitivity was evaluated using error-rate measurements, and for a bit error rate of 10−9, with no fibre, the measured optical sensitivity was −37.0 dBm. These results are used as a basis for the calculation of maximum repeater spacings for 1.1 Gb/s systems operating at 0.85 μm and 1.25 μm wavelengths.
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Optimal radiation pattern of an array in the presence of two directional interferences
Optical fibres prepared by plasma-augmented vapour deposition
Microwave detection with n-GaAs/N-GaAlAs heterojunctions
  • Author(s): J. Lechner ; M. Kneidinger ; H.W. Thim ; R. Kuch ; J. Wernisch
  • Source: Electronics Letters, Volume 15, Issue 9, p. 254 –255
  • DOI:  10.1049/el:19790180
  • Type: Article
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  • p. 254 –255 (2)
    n-GaAs/N-GaAlAs heterojunctions have been grown on highly doped (100) GaAs substrates by l.p.e. Microwave detector diodes made of these layers have been operated successfully for the first time at frequencies up to 18 GHz. The open-circuit voltage sensitivity is comparable with commercially available Schottky-barrier diodes. Their high-frequency performance as well as the observed potential distributions measured across the junction indicate that minority-carrier effects are absent.
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Effect of injection current on the dielectric constant of an inbuilt waveguide in twin-transverse-junction stripe lasers
  • Author(s): S.E.H. Turley ; G.H.B. Thompson ; D.F. Lovelace
  • Source: Electronics Letters, Volume 15, Issue 9, p. 256 –257
  • DOI:  10.1049/el:19790181
  • Type: Article
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  • p. 256 –257 (2)
    An investigation has been made of the role of injected carriers in reducing the effective dielectric constant of the inbuilt waveguide of a (GaAl)As double-heterostructure twin-transverse-junction (t.t.j.) stripe laser fabricated by deep Zn diffusion. The technique employed in this study is the measurement of the spectral shift of each Fabry-Perot mode as a function of drive current. The results show that the injected carriers contribute (Δε)c=−5.92=10−2 to the effective dielectric constant of the waveguide at threshold.
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Noninverting integrators with improved high-frequency response
  • Author(s): Wolfgang Kellner
  • Source: Electronics Letters, Volume 15, Issue 9, p. 257 –258
  • DOI:  10.1049/el:19790182
  • Type: Article
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  • p. 257 –258 (2)
    Two methods are presented for improving the poor high-frequency response of noninverting integrators due to the limited gain-bandwidth product of operational amplifiers (o.a.s). Integrators involving two o.a.s can be upgraded by choosing the inverter's resistance ratio in correspondence with the golden section. Furthermore, a known method for compensating Miller integrators is applied to the DeBoo integrator.
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Novel microwave integrated lowpass filters
  • Author(s): Guglielmo D'Inzeo ; Franco Giannini ; Roberto Sorrentino
  • Source: Electronics Letters, Volume 15, Issue 9, p. 258 –260
  • DOI:  10.1049/el:19790183
  • Type: Article
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  • p. 258 –260 (3)
    The procedure is described for synthesising Cauer Cheby̅shev lowpass filters of the third order as rectangular microwave integrated structures. The synthesis procedure is based on a two-mode approximation and leads to structures with very small dimensions compared with the usual realisations of such type of filters. The experimental behaviour is shown to be quite satisfactory, particularly in the passband, where the filters show a better performance than the corresponding lowpass prototypes.
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Low-sensitivity high-frequency inductance realisation without capacitor
Comment: Multifunction active R filter with two operational amplifiers
Comment: Multifunction active R filter with two operational amplifiers
Erratum: Fast s.a.w.-based discrete Fourier transformer

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