Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 15, Issue 9, 26 April 1979
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Volume 15, Issue 9
26 April 1979
Variable-centre-frequency constant-bandwidth linear-phase digital bandpass filters
- Author(s): S.S. Ahuja and S.C. Dutta Roy
- Source: Electronics Letters, Volume 15, Issue 9, p. 245 –246
- DOI: 10.1049/el:19790173
- Type: Article
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A third-order cosine transformation is used to obtain a variable-centre-frequency constant-bandwidth linear-phase digital bandpass filter, the bandwidth being the same as that of the prototype bandpass filter.
V.P.E. GaAs m.e.s.f.e.t. structure using oxygen injection during buffer layer growth
- Author(s): H. Bruch ; L. Palm ; F. Ponse ; P. Balk
- Source: Electronics Letters, Volume 15, Issue 9, p. 246 –247
- DOI: 10.1049/el:19790174
- Type: Article
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GaAs m.e.s.f.e.t. structures with high-resistivity buffer layers were prepared by introducing oxygen into the deposition system during growth. The electrical properties of the buffer layers are independent of the oxygen content of the gas phase over a large range of partial pressures. The characteristics of devices prepared with such layers are excellent.
Hole traps in n-InP by d.l.t.s. and transient capacitance techniques
- Author(s): A.N.M.M. Choudhury and P.N. Robson
- Source: Electronics Letters, Volume 15, Issue 9, p. 247 –249
- DOI: 10.1049/el:19790175
- Type: Article
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The parameter of a single hole trap frequently observed in bulk and v.p.e. n-InP have been determined for the first time by both transient-capacitance and d.l.t.s. techniques. An activation energy of 270 meV and capture cross-section of 1.4=10−13 cm2 have been measured.
Recursive formulae for ladder-network optimisation
- Author(s): E. Olcayto
- Source: Electronics Letters, Volume 15, Issue 9, p. 249 –250
- DOI: 10.1049/el:19790176
- Type: Article
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The analysis, the gradient and the Hessian matrix of a ladder-network structure may be derived precisely from a family recursive formulae. The method is well suited to computer programming and extremely efficient computationally. The formulae might be included in a c.a.d. programme as a self-contained block and may be used to solve optimisation problems of certain ladder networks employing Newton-Raphson techniques.
Low-noise optical detection of a 1.1 Gb/s optical data stream
- Author(s): S.M. Abbott and W.M. Muska
- Source: Electronics Letters, Volume 15, Issue 9, p. 250 –251
- DOI: 10.1049/el:19790177
- Type: Article
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A low-noise, 1.1 Gb/s optical receiver has been built using a silicon a.p.d. and a GaAs f.e.t. The receiver sensitivity was evaluated using error-rate measurements, and for a bit error rate of 10−9, with no fibre, the measured optical sensitivity was −37.0 dBm. These results are used as a basis for the calculation of maximum repeater spacings for 1.1 Gb/s systems operating at 0.85 μm and 1.25 μm wavelengths.
Optimal radiation pattern of an array in the presence of two directional interferences
- Author(s): P.C.K. Kwok and P.S. Brandon
- Source: Electronics Letters, Volume 15, Issue 9, p. 251 –252
- DOI: 10.1049/el:19790178
- Type: Article
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In the presence of two directional interferences, the radiation pattern of an adaptive array can be expressed in terms of the powers of the sources and their directions of arrival. This is used to illustrate the performance and operation of adaptive arrays in the case of multiple jammers. In particular, the case of main-beam jamming is examined.
Optical fibres prepared by plasma-augmented vapour deposition
- Author(s): J. Irven and A. Robinson
- Source: Electronics Letters, Volume 15, Issue 9, p. 252 –254
- DOI: 10.1049/el:19790179
- Type: Article
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Optical fibres have been prepared using vapour deposition in inductively coupled plasmas. Both homogeneous and pseudoheterogeneous deposition of material has been promoted, with the heating effect derived from the plasma augmentation removing the need for subsidiary tube heating. Minimum fibre losses have been 4–5 dB/km at 850 nm.
Microwave detection with n-GaAs/N-GaAlAs heterojunctions
- Author(s): J. Lechner ; M. Kneidinger ; H.W. Thim ; R. Kuch ; J. Wernisch
- Source: Electronics Letters, Volume 15, Issue 9, p. 254 –255
- DOI: 10.1049/el:19790180
- Type: Article
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n-GaAs/N-GaAlAs heterojunctions have been grown on highly doped (100) GaAs substrates by l.p.e. Microwave detector diodes made of these layers have been operated successfully for the first time at frequencies up to 18 GHz. The open-circuit voltage sensitivity is comparable with commercially available Schottky-barrier diodes. Their high-frequency performance as well as the observed potential distributions measured across the junction indicate that minority-carrier effects are absent.
Effect of injection current on the dielectric constant of an inbuilt waveguide in twin-transverse-junction stripe lasers
- Author(s): S.E.H. Turley ; G.H.B. Thompson ; D.F. Lovelace
- Source: Electronics Letters, Volume 15, Issue 9, p. 256 –257
- DOI: 10.1049/el:19790181
- Type: Article
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An investigation has been made of the role of injected carriers in reducing the effective dielectric constant of the inbuilt waveguide of a (GaAl)As double-heterostructure twin-transverse-junction (t.t.j.) stripe laser fabricated by deep Zn diffusion. The technique employed in this study is the measurement of the spectral shift of each Fabry-Perot mode as a function of drive current. The results show that the injected carriers contribute (Δε)c=−5.92=10−2 to the effective dielectric constant of the waveguide at threshold.
Noninverting integrators with improved high-frequency response
- Author(s): Wolfgang Kellner
- Source: Electronics Letters, Volume 15, Issue 9, p. 257 –258
- DOI: 10.1049/el:19790182
- Type: Article
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Two methods are presented for improving the poor high-frequency response of noninverting integrators due to the limited gain-bandwidth product of operational amplifiers (o.a.s). Integrators involving two o.a.s can be upgraded by choosing the inverter's resistance ratio in correspondence with the golden section. Furthermore, a known method for compensating Miller integrators is applied to the DeBoo integrator.
Novel microwave integrated lowpass filters
- Author(s): Guglielmo D'Inzeo ; Franco Giannini ; Roberto Sorrentino
- Source: Electronics Letters, Volume 15, Issue 9, p. 258 –260
- DOI: 10.1049/el:19790183
- Type: Article
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The procedure is described for synthesising Cauer Cheby̅shev lowpass filters of the third order as rectangular microwave integrated structures. The synthesis procedure is based on a two-mode approximation and leads to structures with very small dimensions compared with the usual realisations of such type of filters. The experimental behaviour is shown to be quite satisfactory, particularly in the passband, where the filters show a better performance than the corresponding lowpass prototypes.
Low-sensitivity high-frequency inductance realisation without capacitor
- Author(s): M.T. Ahmed and M.A Siddiqi
- Source: Electronics Letters, Volume 15, Issue 9, p. 260 –261
- DOI: 10.1049/el:19790184
- Type: Article
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A stable low-component active R circuit is given for the simulation of nonideal grounded inductance. It has low L and Q sensitivities. Independent Q tuning is possible. The circuit is extended to realise floating inductance. The theory is experimentally verified.
Comment: Multifunction active R filter with two operational amplifiers
- Author(s): R. Nandi
- Source: Electronics Letters, Volume 15, Issue 9, p. 261 –262
- DOI: 10.1049/el:19790185
- Type: Article
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Comment: Multifunction active R filter with two operational amplifiers
- Author(s): E. Sánchez-Sinencio
- Source: Electronics Letters, Volume 15, Issue 9, page: 262 –262
- DOI: 10.1049/el:19790186
- Type: Article
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Erratum: Fast s.a.w.-based discrete Fourier transformer
- Author(s): J.B.G. Roberts ; B.J. Darby ; R.A. Bale ; R. Eames
- Source: Electronics Letters, Volume 15, Issue 9, page: 262 –262
- DOI: 10.1049/el:19790187
- Type: Article
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