Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 15, Issue 19, 13 September 1979
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Volume 15, Issue 19
13 September 1979
Periodic slow-wave low-loss structures for monolithic GaAs microwave integrated circuits
- Author(s): E.M. Bastida and G.P. Donzelli
- Source: Electronics Letters, Volume 15, Issue 19, p. 581 –582
- DOI: 10.1049/el:19790417
- Type: Article
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Slow-wave structures on GaAs semi-insulating substrate, obtained by periodically loading a coplanar line with high-Q overlap capacitors, are described. They operate up to X-band, reducing significantly the signal phase velocity by a factor nearly independent of the frequency. Owing to their low transmission losses, they are particularly suitable for monolithic GaAs f.e.t. circuits.
Joint parameter/state estimation
- Author(s): Anthony Jakeman and Peter Young
- Source: Electronics Letters, Volume 15, Issue 19, p. 582 –583
- DOI: 10.1049/el:19790418
- Type: Article
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It is shown how the refined instrumental variable method of parameter/state estimation for single-input single-output (s.i.s.o.) systems proposed by Young1 can be extended to multi-input multi-output (m.i.m.o.) systems. As might be expected, the extension follows directly from the s.i.s.o. analysis, but involves some difficult and interesting matrix manipulations.
Fundamental charge distributions for surface-wave interdigital transducer analysis
- Author(s): D.P. Morgan ; B. Lewis ; J.G. Metcalfe
- Source: Electronics Letters, Volume 15, Issue 19, p. 583 –585
- DOI: 10.1049/el:19790419
- Type: Article
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The response of transducers with arbitrary polarity sequences can be expressed simply, allowing for electrostatic neighbour effects, by using as an element factor the charge distribution obtained for excitation of one electrode. New calculations of this element factor are presented for a range of metallisation ratios. Treating interelectrode gaps as elementary sources gives an element factor which is less dependent on frequency.
Comment: Analytic expression for the frequency response and bandwidth of a spherical random array
- Author(s): Leonard Lewin
- Source: Electronics Letters, Volume 15, Issue 19, p. 585 –586
- DOI: 10.1049/el:19790420
- Type: Article
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Reply: Analytic expression for the frequency response and bandwidth of a spherical random array
- Author(s): Davras Yavuz
- Source: Electronics Letters, Volume 15, Issue 19, page: 586 –586
- DOI: 10.1049/el:19790421
- Type: Article
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Influence of central valley effective mass and alloy scattering on transient drift velocity in Ga1−xInxP1−yAsy
- Author(s): M.A. Littlejohn ; L.A. Arledge ; T.H. Glisson ; J.R. Hauser
- Source: Electronics Letters, Volume 15, Issue 19, p. 586 –588
- DOI: 10.1049/el:19790422
- Type: Article
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The instantaneous ensemble-averaged and time-averaged velocity of electrons are presented for Ga0.27In0.73P0.4As0.6, and the results are compared to those for GaAs. The results indicate that both the effective mass in the Γ conduction band and alloy scattering are very critical in determining the transient (or velocity-overshoot) characteristic as well as the static velocity-field characteristic for this quaternary material.
Improved algorithm for probe-corrected spherical near-field/far-field transformation
- Author(s): Flemming Holm Larsen
- Source: Electronics Letters, Volume 15, Issue 19, p. 588 –590
- DOI: 10.1049/el:19790423
- Type: Article
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The technique for computation of antenna far fields from spherical near-field measurements has been improved, allowing large antennas to be treated. The efficiency and accuracy is demonstrated for an antenna without rotational symmetry and about 50 wavelengths in diameter.
Analysis of approximations for the mode dispersion in monomode fibres
- Author(s): R.A. Sammut
- Source: Electronics Letters, Volume 15, Issue 19, p. 590 –591
- DOI: 10.1049/el:19790424
- Type: Article
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A number of recent papers have discussed the mode dispersion in step-index, monomode fibres using formulae based on accurate approximations for the modal propagation constant. It is shown here that, since dispersion depends on the first and second derivatives of the propagation constant, the use of such formulae may often be invalid and that a different type of approximation may be more useful
Pulsed GaAs f.e.t. operation for high peak output powers
- Author(s): P.C. Wade ; D. Rutkowski ; I. Drukier
- Source: Electronics Letters, Volume 15, Issue 19, p. 591 –593
- DOI: 10.1049/el:19790425
- Type: Article
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Significant increases in GaAs f.e.t. X-band power output are made possible by pulsed operation, using pulse durations sufficiently short that thermal limitations are alleviated. Significantly higher-voltage operation is also possible under these conditions, with further improvement in power output and gain. As much as 5.9 W of peak power output has been obtained at 8 GHz from a device capable of 2.5 W c.w. output at 6 GHz.
Remarks on the convolution algorithm of Agarwal and Cooley
- Author(s): J.M. Pollard
- Source: Electronics Letters, Volume 15, Issue 19, p. 593 –594
- DOI: 10.1049/el:19790426
- Type: Article
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The algorithm of the title naturally computes cyclic convolutions. We discuss some ways in which it can be applied to noncyclic convolutions as required for digital filters; we can sometimes obtain a significant improvement in efficiency over the well-known ‘overlap-add’ method.
Direct modulation characteristics of GaInAsP/InP d.h. lasers with various stripe widths measured by sharp-pulse method
- Author(s): Sakakibara Yasushi ; Furuya Kazuhito ; Suematsu Yasuharu ; Itaya Yoshio
- Source: Electronics Letters, Volume 15, Issue 19, p. 594 –595
- DOI: 10.1049/el:19790427
- Type: Article
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The direct modulation characteristics of GaInAsP/InP d.h. lasers emitting at 1.3 μm with various stripe widths were measured by the proposed sharp-pulse method. As a result, a flat modulation frequency response up to 1.9 GHz was observed in a laser diode with 5 μm stripe width.
Modulation characteristics of 1.3 μm buried-stripe InGaAsP laser up to 2 Gbit/s data rates
- Author(s): Jun-Ichi Yamada ; Susumu Machida ; Takaaki Mukai ; Hiroyuki Kano ; Koichi Sugiyama
- Source: Electronics Letters, Volume 15, Issue 19, p. 596 –597
- DOI: 10.1049/el:19790428
- Type: Article
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Modulation experimenting on a buried-stripe (b.s.) InGaAsP laser emitting at 1.3 μm was carried out up to 2 Gbit/s. The b.s. laser is free from relaxation oscillation, which degrades modulated optical pube waveforms, especially at high data rates. The repeater gain of 1.6 Gbit/s transmission systems is improved by 9 dB compared with previously reported experiments. Modulation characteristics up to 2 Gbit/s are reported.
Nonlinear circuit analysis through periodic spline approximation
- Author(s): F. Filicori ; M.R. Scalas ; C. Naldi
- Source: Electronics Letters, Volume 15, Issue 19, p. 597 –599
- DOI: 10.1049/el:19790429
- Type: Article
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A spline representation is proposed for the current or voltage periodic waveforms at the connections between the linear and nonlinear subnetworks into which the circuit is partitioned. The periodic steady-state analysis is thus reduced to the solution of a nonlinear system whose unknowns are the knot ordinates of these splines.
Small-area GaAs-GaAlAs heterostructure light-emitting diode with improved current confinement
- Author(s): M.-C. Amann and W. Proebster
- Source: Electronics Letters, Volume 15, Issue 19, p. 599 –600
- DOI: 10.1049/el:19790430
- Type: Article
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A new type of high-radiance GaAs-GaAlAs heterostructure light-emitting diode (l.e.d.) with confinement of the light-emitting area by contact resistance is described. Single heterostructure l.e.d.s of this type with active-region doping of p=3×1018 cm−3 exhibit external quantum efficiency of 1% and a 3 dB modulation cutoff frequency of 66 MHz. Second-harmonic distortion was measured at below 40 dB at a 30 mA peak-peak modulation current and 50 mA direct current (=7.0 kA/cm2).
Equivalent circuits for high-frequency sonar transducers
- Author(s): H. Koymen ; B.V. Smith ; B.K. Gazey
- Source: Electronics Letters, Volume 15, Issue 19, p. 600 –601
- DOI: 10.1049/el:19790431
- Type: Article
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The equivalent circuits for high-frequency transducers with quarter-wave matching layers, such as are used in sonar and ultrasonic applications, are discussed in terms of simple lumped bandpass filter circuits. Expressions for the matching criteria are given for half-section and full-section filters.
On-resistance of V-v.m.o.s. power transistors
- Author(s): W.A. Lane ; C.A.T. Salama ; S. Dmitrevsky
- Source: Electronics Letters, Volume 15, Issue 19, p. 601 –602
- DOI: 10.1049/el:19790432
- Type: Article
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An expression for the on-resistance of a V-groove vertical-channel m.o.s. (V-v.m.o.s.) transistor is presented. The expression relates the on-resistance to the geometry and resistivity of the drain drift region and is useful in optimising the drift region parameters for minimum on-resistance and maximum drain-source breakdown.
Cumulative crosspolarisation and canting angle distributions
- Author(s): I.J. Dilworth and B.G. Evans
- Source: Electronics Letters, Volume 15, Issue 19, p. 603 –604
- DOI: 10.1049/el:19790433
- Type: Article
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Using measured crosspolarisation against attenuation measurements at 11.6 GHz in three polarisation states over a three-year period and a theoretical rain model, long-term canting-angle statistics are derived. A Gaussian distribution in the normal propagation plane with mean 8.5° and standard deviation 43°, together with a rotation of this plane by an angle determined by the prevailing wind condition, is found to fit the data. This may be used to predict long-term cross-polarisation statistics.
Surface stability of GaAs during tin diffusion
- Author(s): Brian Tuck and M.H. Badawi
- Source: Electronics Letters, Volume 15, Issue 19, p. 604 –606
- DOI: 10.1049/el:19790434
- Type: Article
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Experiments are described in which tin was diffused into GaAs in a closed ampoule. When the ambient arsenic vapour pressure was low the results were not reproducible, and severe deterioration of the surface was observed. Evidence is produced which suggests that both evaporation and condensation occurred during these diffusions. The problem was completely solved by employing a high-vapour pressure of arsenic. It is suggested that a gallium-rich surface is less stable than one which is arsenic-rich.
Room temperature c.w. operation of InGaAsP/InP heterostructure lasers emitting at 1.56 μm
- Author(s): S. Akiba ; K. Sakai ; Y. Matsushima ; T. Yamamoto
- Source: Electronics Letters, Volume 15, Issue 19, p. 606 –607
- DOI: 10.1049/el:19790435
- Type: Article
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Room-temperature c.w. operation of InGaAsP/InP heterostructure lasers grown by liquid-phase epitaxy was achieved at 1.56 μm. An active InGaAsP layer was essentially sandwiched by InP, though a thin InGaAsP buffer layer was deposited to prevent the melt-back of the active layer. Threshold current was typically 300 mA for a 17 μm wide oxide-defined stripe laser.
Multimode fibre baseband frequency response measurement with single frequency output extracted from modulated InGaAsP laser
- Author(s): S. Machida ; N. Imoto ; Y. Ohmori
- Source: Electronics Letters, Volume 15, Issue 19, p. 607 –609
- DOI: 10.1049/el:19790436
- Type: Article
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A new method to measure multimode fibre frequency response is presented by using a single longitudinal mode extracted from modulated semiconductor laser output. Intensity fluctuation noise, caused by r.f. modulation, is utilised as a broadband baseband signal. Baseband frequency response of a 1.98 km graded-index fibre is measured up to 1.5 GHz in 1.1–1.5 μm wavelength region. This method provides a simple and accurate measurement of intermodal dispersion excluding chromatic dispersion effect.
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