Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 14, Issue 6, 16 March 1978
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 14, Issue 6
16 March 1978
Subthreshold behaviour of e.s.f.i.-s.o.s. transistors
- Author(s): Ditmar Kranzer and Wolfgang Fichtner
- Source: Electronics Letters, Volume 14, Issue 6, p. 161 –162
- DOI: 10.1049/el:19780107
- Type: Article
- + Show details - Hide details
-
p.
161
–162
(2)
Theoretical and experimental results are presented which illustrate the influence of various parameters on the subthreshold behaviour of e.s.f.i.-s.o.s. transistors. The numerical analysis accounts for the thin silicon film and the existence of a second interface. A comparison is made with a corresponding bulk transistor, furthermore, between a two- and a one-dimensional analysis of e.s.f.i.-s.o.s. m.o.s.t. The agreement for real cases is found to be excellent.
Simplified method for generating precise triangular waves
- Author(s): Robert Genin ; Claude Jezequel ; Jeannine Genin
- Source: Electronics Letters, Volume 14, Issue 6, p. 162 –163
- DOI: 10.1049/el:19780108
- Type: Article
- + Show details - Hide details
-
p.
162
–163
(2)
Kaplan and Tatrash have given a method for the design of triangular-wave generators. The practical implementation of this circuit requires use of analogue multipliers. The aim of this letter is to propose another method which does not need multipliers.
A new technique for device compatible anodic oxidation of GaAs
- Author(s): Hirokuni Tokuda ; Hiroshi Yokomizo ; Yoshio Adachi ; Toshiaki Ikoma ; Jeffrey Frey
- Source: Electronics Letters, Volume 14, Issue 6, p. 163 –165
- DOI: 10.1049/el:19780109
- Type: Article
- + Show details - Hide details
-
p.
163
–165
(3)
A simple and effective new technique has been demonstrated which improves markedly the chemical and electrical properties of heat-treated anodic oxide films on GaAs. This technique should facilitate the use of anodic oxides in innovative GaAs devices.
A novel c.c.d. multiplying input technique
- Author(s): D.V. McCaughan ; J.C. White ; J.R. Hill
- Source: Electronics Letters, Volume 14, Issue 6, p. 165 –166
- DOI: 10.1049/el:19780110
- Type: Article
- + Show details - Hide details
-
p.
165
–166
(2)
A useful technique for operating the I/P stages of a c.c.d. as a multiplier is described. Since the two multiplying inputs are applied to the input diffusion and input gate the method should be widely applicable to most c.c.d. structures.
A 4–8 GHz dual gate m.e.s.f.e.t. amplifier
- Author(s): Jitendra Goel and Herbert J. Wolkstein
- Source: Electronics Letters, Volume 14, Issue 6, p. 167 –168
- DOI: 10.1049/el:19780111
- Type: Article
- + Show details - Hide details
-
p.
167
–168
(2)
A two-stage dual-gate f.e.t. amplifier with small signal gain of 20 ± 0.75 dB, covering an octave bandwidth (4–8 GHz) and having a dynamic gain control range in excess of 60 dB is reported. The gain frequency response, input and output v.s.w.r. are described as a function of second-gate voltage. The performance of the dual-gate f.e.t. amplifier as a fast r.f. switch is also presented.
The Yagi array of concentric loops
- Author(s): G.W. Raffoul and L.C. Shen
- Source: Electronics Letters, Volume 14, Issue 6, p. 168 –170
- DOI: 10.1049/el:19780112
- Type: Article
- + Show details - Hide details
-
p.
168
–170
(3)
An analysis of wave propagation on an infinitely long Yagi array of concentric circular loops is outlined. A dispersion relation is solved numerically for the phase velocity of the wave. The array is found to possess two distinct passbands corresponding to the resonances of the inner and the outer loops, respectively. The theoretically determined phase velocities are compared with experimentally measured values.
Pulse delay measurements in the zero-material-dispersion region for germanium- and phosphorus-doped silica fibres
- Author(s): Chinlon Lin ; L.G. Cohen ; W.G. French ; V.A. Foertmeyer
- Source: Electronics Letters, Volume 14, Issue 6, p. 170 –172
- DOI: 10.1049/el:19780113
- Type: Article
- + Show details - Hide details
-
p.
170
–172
(3)
Wavelength-dependent pulse dispersion in germanium- and phosphorus-doped silica fibres of different concentrations was measured using mode-locked subnanosecond pulses in the 1.064–1.55 μm wavelength range. Zero dispersion for GeO2-SiO2 fibres was observed in the 1.3–1.33 μm region depending on the concentration. P2O5-doped silica fibres showed zero dispersion near 1.28 μm, independent of doping concentration.
13 μm wide stripe c.w. GaAs/GaAlAs d.h. lasers linear to more than 10 mW
- Author(s): C. Lindström and M. Janson
- Source: Electronics Letters, Volume 14, Issue 6, p. 172 –174
- DOI: 10.1049/el:19780114
- Type: Article
- + Show details - Hide details
-
p.
172
–174
(3)
By using a very uniform device structure it has been possible to fabricate stripe contact d.h. GaAs/GaAlAs injection lasers with linear continuous output power exceeding 10 mW from one facet independent of stripe width in the range 10–14 μm. These results predict that there is no fundamental mechanism that gives a nonlinearity at a few milliwatts output power which could explain earlier published results, and that increased maximum linear output power could be achieved by further improving the uniformity of the device structure.
Use of silicon self-scanned linear photodiode arrays for the direct display of transmission electron microscope energy loss spectra
- Author(s): D.G. Jenkins ; C.J. Rossouw ; B.L. Jones ; G.R. Booker ; P.W. Fry
- Source: Electronics Letters, Volume 14, Issue 6, p. 174 –175
- DOI: 10.1049/el:19780115
- Type: Article
- + Show details - Hide details
-
p.
174
–175
(2)
Silicon self-scanned linear photodiode arrays have been used to directly display, on an external monitor screen, transmission electron microscope energy loss spectra. The 80 keV electrons impinged on a phosphor screen deposited on a fibre-optic plate located immediately above the photodiode array. Spectra showing plasmon loss peaks were completely scanned in 20 ms.
Performance of GaAs power m.e.s.f.e.t.s
- Author(s): S.H. Wemple ; W.C. Niehaus ; W.O. Schlosser ; J.V. Dilorenzo ; H.M. Cox
- Source: Electronics Letters, Volume 14, Issue 6, p. 175 –176
- DOI: 10.1049/el:19780116
- Type: Article
- + Show details - Hide details
-
p.
175
–176
(2)
Power performance results at 4 GHz are summarised for GaAs m.e.s.f.e.t.s ranging in size from 4 to 16 mm gate periphery. A double-chip 16 mm unit operated at 24 V source-drain bias produced 13.5 W with 3 dB gain and 10.7 W with 8.1 dB gain. Although lack of perfect power and gain scaling is observed, the degradation in output power of the 16 mm devices was only 1 dB compared to the smaller devices.
Overlaid charge-coupled device
- Author(s): R.M. Barsan
- Source: Electronics Letters, Volume 14, Issue 6, p. 176 –178
- DOI: 10.1049/el:19780117
- Type: Article
- + Show details - Hide details
-
p.
176
–178
(3)
A novel charge-coupled device that is twice as compact as a conventional bulk-channel c.c.d. is described. The operation and the specific capabilities of the proposed structure are discussed.
Doubly fed coaxial antennas
- Author(s): F. Rahman and T.S.M. MacLean
- Source: Electronics Letters, Volume 14, Issue 6, p. 178 –179
- DOI: 10.1049/el:19780118
- Type: Article
- + Show details - Hide details
-
p.
178
–179
(2)
A new type of dipole antenna with height reduction properties is described. Two forms of it have been developed, with self resonant heights of approximately λ/3 and λ/4, respectively. The former can alto be made self resonant at much lower heights but with different radiation patterns to that of a dipole.
Transitional Butterworth–Chebyshev filters
- Author(s): S.C.Dutta Roy and P. Varanasi
- Source: Electronics Letters, Volume 14, Issue 6, p. 179 –180
- DOI: 10.1049/el:19780119
- Type: Article
- + Show details - Hide details
-
p.
179
–180
(2)
Based on the fact that the Butterworth and Chebyshev filters differ in the number of points of flatness, a new variety of simple and elegant Butterworth-Chebyshev transitional filter is proposed. Their time and frequency domain characteristics confirm their transitional nature.
Radiation field analysis and synthesis using Prony's method
- Author(s): E.K. Miller and D.L. Lager
- Source: Electronics Letters, Volume 14, Issue 6, p. 180 –182
- DOI: 10.1049/el:19780120
- Type: Article
- + Show details - Hide details
-
p.
180
–182
(3)
Prony's method, a technique for extracting the parameters of an exponential series from its discrete samples, is applied here to far-field pattern data. The method offers possibilities in imaging source distributions and in array analysis and synthesis.
Time-domain synthesis of RC bidimensional networks via the approximate solution of Volterra's equations
- Author(s): R. Lojacono
- Source: Electronics Letters, Volume 14, Issue 6, p. 182 –183
- DOI: 10.1049/el:19780121
- Type: Article
- + Show details - Hide details
-
p.
182
–183
(2)
A method is proposed for synthesising three-layer RC networks in the time domain. The basis of the method is the piecewise constant approximation of the geometrical shape of the conductive layer. An example illustrates the effectiveness of the resulting algorithm.
Large signal GaAs m.e.s.f.e.t. model and distortion analysis
- Author(s): R.A. Minasian
- Source: Electronics Letters, Volume 14, Issue 6, p. 183 –185
- DOI: 10.1049/el:19780122
- Type: Article
- + Show details - Hide details
-
p.
183
–185
(3)
A simple large signal model, derived from small signal measurements over a range of bias points, is presented for a 2 μm gate length GaAs m.e.s.f.e.t. Its accuracy is verified by comparing model-predicted second harmonic distortion via time domain and Volterra analyses, with measurements to input frequencies of 4.5 GHz.
Modification of zinc diffusion profiles in GaAs by proton irradiation
- Author(s): A.J. Houghton ; B. Tuck ; K.G. Stephens
- Source: Electronics Letters, Volume 14, Issue 6, p. 185 –186
- DOI: 10.1049/el:19780123
- Type: Article
- + Show details - Hide details
-
p.
185
–186
(2)
A technique is described which gives control over the dopant distribution for zinc diffusion in GaAs. Experimental profiles are presented which show that both dopant depth and concentration can be increased by prior H+-irradiation. The zinc atom concentration profiles are shown to correspond with the carrier (hole) profiles.
Performance of a reflector antenna incorporating a filtering Cassegrain mirror
- Author(s): R.J. Langley ; P.A. Langsford ; E.A. Parker
- Source: Electronics Letters, Volume 14, Issue 6, p. 186 –187
- DOI: 10.1049/el:19780124
- Type: Article
- + Show details - Hide details
-
p.
186
–187
(2)
Radiation patterns have been measured at 20.0, 22.0 and 25.2 GHz for a parabolic reflector illuminated from the prime focus by a linearly polarised feed radiating through a sub-reflector built from a stack of dielectric filled waveguides. The influence of the intervening guides on the radiation patterns is discussed.
Low loss fibre transmission of high speed pulse signals at 1.29 μm wavelength
- Author(s): Masatoshi Saruwatari ; Koichi Asatani ; Jun-Ichi Yamada ; Iwao Hatakeyama ; Koichi Sugiyama ; Tatsuya Kimura
- Source: Electronics Letters, Volume 14, Issue 6, p. 187 –189
- DOI: 10.1049/el:19780125
- Type: Article
- + Show details - Hide details
-
p.
187
–189
(3)
Using InGaAsP semiconductors laser emitting at 1.29 μm wavelength as optical sources, and low-loss germanium-doped single-mode silica fibres with 11 km lengths, optical transmission experiments were carried out at 400 and 800 Mb/s bit rates.
Implementation of an efficient inter-computer network for the distribution of multidestination messages
- Author(s): T.D. Wells ; J.D. Lewis ; D.G. Appleby
- Source: Electronics Letters, Volume 14, Issue 6, p. 189 –190
- DOI: 10.1049/el:19780126
- Type: Article
- + Show details - Hide details
-
p.
189
–190
(2)
This letter describes a series of protocols, a message filtering mechanism and an error recovery procedure which allow broadcast transmission and selective message reception in a high-speed (> 1 Mbit/s) inter-computer network.
Mobility profiling of f.e.t. structures
- Author(s): P.R. Jay ; I. Crossley ; M.J. Cardwell
- Source: Electronics Letters, Volume 14, Issue 6, p. 190 –191
- DOI: 10.1049/el:19780127
- Type: Article
- + Show details - Hide details
-
p.
190
–191
(2)
Several techniques have been used to obtain electron mobility profiles in GaAs f.e.t. structures. In particular, mobilities have been measured near the interface between the active n layer and the underlying high resistivity material. The most detailed information in this region has been obtained using a Schottky-gated Van der Pauw technique.
A fast d.f.t. algorithm using complex integer transforms
- Author(s): I.S. Reed and T.K. Truong
- Source: Electronics Letters, Volume 14, Issue 6, p. 191 –193
- DOI: 10.1049/el:19780128
- Type: Article
- + Show details - Hide details
-
p.
191
–193
(3)
For certain large transform lengths, Winograd's algorithm for computing the discrete Fourier transform (d.f.t.) is extended considerably. This is accomplished by performing the cyclic convolution, required by Winograd's method, by a fast transform over certain complex integer fields developed previously by the authors. This new algorithm requires fewer multiplications than either the standard fast Fourier transform (f.f.t.) or Winograd's more conventional algorithm.
Radiation balance microwave thermograph for industrial and medical applications
- Author(s): K.M. Lüdeke ; B. Schiek ; J. Köhler
- Source: Electronics Letters, Volume 14, Issue 6, p. 194 –196
- DOI: 10.1049/el:19780129
- Type: Article
- + Show details - Hide details
-
p.
194
–196
(3)
A new improved radiometer has been developed, which measures physical temperature independently of a possible mismatch between the radiation-emitting object and the receiving antenna. Its ability to reduce a mismatch-induced error of 74% (in a conventional system) to a level comparable to the random fluctuations of the instruments output (3% or 0.3 K) has been demonstrated experimentally.
Algorithms for integrated system optimisation and parameter estimation
- Author(s): P.D. Roberts
- Source: Electronics Letters, Volume 14, Issue 6, p. 196 –197
- DOI: 10.1049/el:19780130
- Type: Article
- + Show details - Hide details
-
p.
196
–197
(2)
Two new algorithms are described for on-line determination of the steady-state operating condition of an industrial process using a simplified mathematical model containing parameters which require to be estimated. The algorithms take account of the inherent interaction between the two problems of optimisation and parameter estimation.
Direct modulation of InGaAsP/InP double heterostructure lasers
- Author(s): S. Akiba ; K. Sakai ; T. Yamamoto
- Source: Electronics Letters, Volume 14, Issue 6, p. 197 –198
- DOI: 10.1049/el:19780131
- Type: Article
- + Show details - Hide details
-
p.
197
–198
(2)
Direct modulation of an InGaAsP/InP double heterostructure laser was investigated experimentally. Sinusoidal modulation up to 2.5 GHz was achieved with almost constant modulation efficiency. Pulse responses showed that the damped relaxation oscillation in light output was well suppressed.
An X band f.e.t. oscillator with low f.m. noise
- Author(s): H.J. Finlay ; J.S. Joshi ; S.C. Cripps
- Source: Electronics Letters, Volume 14, Issue 6, p. 198 –199
- DOI: 10.1049/el:19780132
- Type: Article
- + Show details - Hide details
-
p.
198
–199
(2)
Some f.m. noise results on GaAs f.e.t. oscillators using unencapsulated devices are presented. The f.m. noise results show an improvement of nearly 20 dB on similar unstabilised low-Q GaAs f.e.t. oscillators.
An algorithm for the state assignment of synchronous sequential circuits
- Author(s): P.K. Lala
- Source: Electronics Letters, Volume 14, Issue 6, p. 199 –201
- DOI: 10.1049/el:19780133
- Type: Article
- + Show details - Hide details
-
p.
199
–201
(3)
A systematic procedure for finding solutions to the state assignment problem in synchronous sequential circuits is described. It is based on two-block partition and is designed for use with D flip-flop memory elements.
Short-duration pulses for time-domain spectrometry using directional couplers
- Author(s): R.J. Hawkins
- Source: Electronics Letters, Volume 14, Issue 6, p. 201 –202
- DOI: 10.1049/el:19780134
- Type: Article
- + Show details - Hide details
-
p.
201
–202
(2)
Quarter-wavelength directional couplers can be used to give pulses of short duretion from sources, such as the tunnel diode, which produce relatively long pulses with a fast leading edge. These time-limited pulses can be used in time domain spectrometry of active devices to reduce the incident power, while increasing the signal/noise ratio over a band of frequencies.
Chebyshev delay approximation of even degree with constraint at the origin
- Author(s): V.S. Stojanović and M.Dj Radmanović
- Source: Electronics Letters, Volume 14, Issue 6, p. 202 –204
- DOI: 10.1049/el:19780135
- Type: Article
- + Show details - Hide details
-
p.
202
–204
(3)
A special case of Chebyshev approximation of a constant group delay, referred to as the constrained Chebyshev delay approximation at the origin, recently introduced for low-pass filter functions of odd degree, is extended to allow for determination of the transfer function of even degree.
Profile design for distortion reduction in microwave field-effect transistors
- Author(s): Robert A. Pucel
- Source: Electronics Letters, Volume 14, Issue 6, p. 204 –206
- DOI: 10.1049/el:19780136
- Type: Article
- + Show details - Hide details
-
p.
204
–206
(3)
Profile shaping can reduce third-order intermodulation distortion in microwave f.e.t.s. The mathematical form of the profiles to accomplish this has been derived. It is shown that two forms are possible, one corresponding to a doping spike, the other to an inverse cubic decrease in doping with distance from the episurface. The first has been approximated by workers in the field. The second is believed to be novel.
Synthesis of stochastic learning automata
- Author(s): R.G. Neville ; C.R. Nicol ; P. Mars
- Source: Electronics Letters, Volume 14, Issue 6, p. 206 –208
- DOI: 10.1049/el:19780137
- Type: Article
- + Show details - Hide details
-
p.
206
–208
(3)
The application of digital stochastic computing techniques to the hardware synthesis of stochastic learning automata is considered. Experimental results are presented for a two-state automaton realised using a linear reward/punishment algorithm. The fast learning times obtained are believed to be of significance to the viability of direct on-line control of stochastic systems.
Erratum: Bandwidth and demodulation gain in q.s.s.b. f.m.
- Author(s): L. Verrazzani
- Source: Electronics Letters, Volume 14, Issue 6, page: 208 –208
- DOI: 10.1049/el:19780138
- Type: Article
- + Show details - Hide details
-
p.
208
(1)
Addendum: Computing the invariant zeros of multivariable systems
- Author(s): Y. Shamash
- Source: Electronics Letters, Volume 14, Issue 6, page: 208 –208
- DOI: 10.1049/el:19780139
- Type: Article
- + Show details - Hide details
-
p.
208
(1)
Addendum: Worst-month statistics
- Author(s): R.K. Crane and W.E. Debrunner
- Source: Electronics Letters, Volume 14, Issue 6, page: 208 –208
- DOI: 10.1049/el:19780140
- Type: Article
- + Show details - Hide details
-
p.
208
(1)
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
