Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 14, Issue 23, 9 November 1978
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Volume 14, Issue 23
9 November 1978
p-i-n diode reverse-bias switching via inductive discharging
- Author(s): C.J. Georgopoulos and V. Makios
- Source: Electronics Letters, Volume 14, Issue 23, p. 723 –725
- DOI: 10.1049/el:19780488
- Type: Article
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p.
723
–725
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Reverse switching of high-power p-i-n diodes can be achieved by inductive discharge. In this type of switching there is a direct interaction between the energy-storing element and the p-i-n diodes, and the current and voltage waveforms follow somewhat different equations to those of a conventional driving circuit.
C.W. modelocking of a GaInAsP diode laser
- Author(s): L.A. Glasser
- Source: Electronics Letters, Volume 14, Issue 23, p. 725 –726
- DOI: 10.1049/el:19780489
- Type: Article
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725
–726
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Active c.w. modelocking of a GaInAsP double-heterostructure laser diode operating in an external cavity is reported. 18 ps pulses (f.w.h.m.) are obtained at a repetition rate of 2.1 GHz and a lasing wavelength of 1210 nm. The pulses were measured by autocorrelation using s.h.g. in LiIO3. They are the shortest pulses ever reported for a c.w. laser diode.
Characteristics of double-groove guide at 3 mm wavelength
- Author(s): D.J. Harris and K.W. Lee
- Source: Electronics Letters, Volume 14, Issue 23, p. 726 –727
- DOI: 10.1049/el:19780490
- Type: Article
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726
–727
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A groove guide having two parallel grooves may simultaneously propagate two modes with a small difference in phase constant. Experimental measurement of this difference for three groove separations at 100 GHz gives results close to theoretical predictions. The attenuation of one mode is a little less than for a guide with a single groove.
Threshold dependence on active-layer thickness in InGaAsP/InP d.h. lasers
- Author(s): R.E. Nahory and M.A. Pollack
- Source: Electronics Letters, Volume 14, Issue 23, p. 727 –729
- DOI: 10.1049/el:19780491
- Type: Article
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–729
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Room-temperature threshold current density Jth against active-layer thickness d is reported for pulsed InGaAsP/InP double-heterostructure lasers operating at wavelengths near 1.23 μm. For d ≈ 1 μm, Jth/d is 5.0 kA cm−2 μm−1, whereas the lowest threshold is 1.6 kA cm−2 for d ≈ 0.2 μm. The threshold dependence is fitted by a numerical calculation based on a two-parameter gain model.
Realisation of nth-order lowpass voltage transfer function by active R circuit: signal-flow-graph approach
- Author(s): Cevdet Acar
- Source: Electronics Letters, Volume 14, Issue 23, p. 729 –730
- DOI: 10.1049/el:19780492
- Type: Article
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729
–730
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A general synthesis method is given for the realisation of the nth-order lowpass voltage transfer function by the active R circuit containing n operational amplifiers and 4n resistors.
Comment on the use of stochastic approximation for state estimation in discrete nonlinear dynamical systems
- Author(s): D. Sprevak and M.M. Newmann
- Source: Electronics Letters, Volume 14, Issue 23, p. 730 –731
- DOI: 10.1049/el:19780493
- Type: Article
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–731
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Reply: Comment on the use of stochastic approximation for state estimation in discrete nonlinear dynamical systems
- Author(s): O. Ibidapo-Obe
- Source: Electronics Letters, Volume 14, Issue 23, page: 731 –731
- DOI: 10.1049/el:19780494
- Type: Article
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731
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Computational efficiency of number-theoretic-transform-implemented finite-impulse-response filters
- Author(s): Thomas A. Kriz and Dale F. Bachman
- Source: Electronics Letters, Volume 14, Issue 23, p. 731 –733
- DOI: 10.1049/el:19780495
- Type: Article
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The computational merits of using number-theoretic transforms to spectrally implement f.i.r. filters are discussed. It is demonstrated for all but low-tap filters that the spectral method can significantly reduce the multiply load and modestly reduce the add load by comparison with the usual time-domain method and the recursive ‘moving-window’ finite-field spectral method.
Millimetre-wave switching by optically generated plasma in silicon
- Author(s): Chi H. Lee ; S. Mak ; A.P. Defonzo
- Source: Electronics Letters, Volume 14, Issue 23, p. 733 –734
- DOI: 10.1049/el:19780496
- Type: Article
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Optoelectronic switching and gating of millimetre-wave signals at 94 GHz by optically generated plasma in silicon dielectric waveguides are reported. A pulsewidth for millimeter-wave signals as short as one nanosecond and variable to tens of nanoseconds can readily be obtained by this technique.
Bandwidth of a dipole near and parallel to a conducting plane
- Author(s): G. Dubost
- Source: Electronics Letters, Volume 14, Issue 23, p. 734 –736
- DOI: 10.1049/el:19780497
- Type: Article
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A theoretical method is proposed for explaining the bandwidth previously measured on flat folded dipoles near and parallel to a conducting plane. With a sinusoidal-current assumption, the symmetrical dipole short- or open-circuited is compared with a lossy transmission line. We are able to express the bandwidth by simple formulas which are in agreement with experiments.
Feed radiation patterns modified by a dichroic plate
- Author(s): P.A. Langsford and E.A. Parker
- Source: Electronics Letters, Volume 14, Issue 23, p. 736 –737
- DOI: 10.1049/el:19780498
- Type: Article
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736
–737
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The 20 GHz copolar radiation patterns of a feed 4.25 cm from a flat dichroic plate 15 cm in diameter have been computed using a mode-matching technique. The results are in good agreement with the measured patterns.
Increasing the effective barrier height of Schottky contacts to n–InxGa1−xAs
- Author(s): D.V. Morgan and J. Frey
- Source: Electronics Letters, Volume 14, Issue 23, p. 737 –739
- DOI: 10.1049/el:19780499
- Type: Article
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737
–739
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In this letter it is shown that thin interfacial oxide layers may be used to increase the effective barrier height of Au/InP and Au/InGaAs Schottky barriers. These results confirm earlier studies on InP and extend the technique to InGaAs.
Pole placement using output feedback
- Author(s): M. Seraji
- Source: Electronics Letters, Volume 14, Issue 23, p. 739 –741
- DOI: 10.1049/el:19780500
- Type: Article
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This note determines the number of poles that can be placed using output feedback in linear systems where there exists a direct contribution from the input to the output and the system is not necessarily controllable or observable. The results are presented as three lemmas and are illustrated by a numerical example.
Multifunction active R filter with two operational amplifiers
- Author(s): S. Venkateswaran
- Source: Electronics Letters, Volume 14, Issue 23, p. 741 –742
- DOI: 10.1049/el:19780501
- Type: Article
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A multifunction active R filter with two operational amplifiers, attractive for monolithic i.c. fabrication, is presented. It realises b.p., b.e. and l.p. transfer characteristics at three different output terminals. The resonant frequency of the b.p. characteristic can be controlled over a wide range with constant bandwidth and resonant gain.
High-speed iterative array for binary multiplication
- Author(s): B.S. Dormido and D.M.A. Canto
- Source: Electronics Letters, Volume 14, Issue 23, p. 742 –743
- DOI: 10.1049/el:19780502
- Type: Article
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An iterative array for the multiplication of binary numbers and also the addition of either one or two other numbers is proposed, employing r.o.m.s. as lookup tables. The regularity of this array should make it attractive for l.s.i. fabrication.
Redefined element factor for simplified i.d.t. design
- Author(s): Supriyo Datta and Bill J. Hunsinger
- Source: Electronics Letters, Volume 14, Issue 23, p. 744 –745
- DOI: 10.1049/el:19780503
- Type: Article
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p.
744
–745
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It is shown that the response of interdigital transducers with uniform periodicity and duty factor can be written as the product of a redefined element factor and an array factor even if the magnitude and phase of the electrode voltages are completely arbitrary.
Convolution by membrane waves
- Author(s): Pekka Meriläinen and Mauri Luukkala
- Source: Electronics Letters, Volume 14, Issue 23, p. 745 –746
- DOI: 10.1049/el:19780504
- Type: Article
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–746
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Convolution in the frequency range of hundreds of kilohertz has been produced by using the nonlinear relationship between longitudinal strain and transversal displacement associated with the membrane wave. The transversal piezoelectric effect of PVF2 film has been used to detect convolution.
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