Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 14, Issue 22, 26 October 1978
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Volume 14, Issue 22
26 October 1978
Equal-valued earthed-capacitor realisation of a third-order lowpass Butterworth characteristic using current conveyors
- Author(s): R. Nandi
- Source: Electronics Letters, Volume 14, Issue 22, p. 699 –700
- DOI: 10.1049/el:19780471
- Type: Article
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A minimal active-circuit realisation of a 3rd-order lowpass Butterworth characteristic using second-generation current conveyors as the active elements is proposed. The network parameters have low passive sensitivities and are practically insensitive to active parameter changes. The configuration is attractive for i.e. fabrication in that the passive components are all of equal value and the capacitors are earthed.
Influence of low-temperature thermotreatment on the characteristics of Cr-GaAs and Au-Cr-GaAs Schottky diodes
- Author(s): O.YU. Borkovskaya ; N.L. Dmitruk ; R.V. Konakova ; M.YU. Filatov
- Source: Electronics Letters, Volume 14, Issue 22, p. 700 –701
- DOI: 10.1049/el:19780472
- Type: Article
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–701
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The effect of low-temperature heating on the electric and recombination parameters of Schottky diodes are investigated.
Numerical simulation of a forward-biased p-i-n structure with band-to-band Auger recombination
- Author(s): B. Freidin and E. Velmre
- Source: Electronics Letters, Volume 14, Issue 22, p. 701 –703
- DOI: 10.1049/el:19780473
- Type: Article
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A modification of the iterative scheme of Seidman and Choo is described. The proposed method is suited for the modelling of processes in semiconductor structures including Auger recombination. Some results of calculations are given.
Wavelength-dispersive properties of glasses for optical fibres: the germania enigma
- Author(s): M.J. Adams ; D.N. Payne ; F.M.E. Sladen ; A.H. Hartog
- Source: Electronics Letters, Volume 14, Issue 22, p. 703 –705
- DOI: 10.1049/el:19780474
- Type: Article
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A comparative study is made of the wavelength-dispersive properties of germania-doped glass for optical-fibre waveguides and some important discrepancies are revealed. New results are presented for profile dispersion of this material over an extended wavelength range.
Propagation delay time of i.i.l. at low current levels
- Author(s): J. Lohstroh and N.C. de Troye
- Source: Electronics Letters, Volume 14, Issue 22, p. 705 –706
- DOI: 10.1049/el:19780475
- Type: Article
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It is shown that the propagation delay time of i.i.l. at low current levels is given by tr/2 if tf < tr, where tf is the fall time and tr the rise time at an i.i.l. input node. An expression for tr and tf can easily be found.
On lowpass filters having multiple pairs of imaginary-axis zeros at two distinct points in the stopband with weighted l.m.s. error characteristic
- Author(s): Dang Tan Phuc and J. Attikiouzel
- Source: Electronics Letters, Volume 14, Issue 22, p. 706 –708
- DOI: 10.1049/el:19780476
- Type: Article
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We introduce a solution to lowpass filters with multiple pairs of transmission zeros at two distinct frequencies in the stop-band. The filters derived are subjected to the criterion of minimum weighted least-mean-square error in any interval of interest in the passband. It is shown that the maximally flat sharp-cutoff filters are special cases of this new approximation.
High-speed gray-binary and binary-Gray code convertors using electro-optic light modulators
- Author(s): Kuniharu Takizawa and Masakatsu Okada
- Source: Electronics Letters, Volume 14, Issue 22, p. 708 –710
- DOI: 10.1049/el:19780477
- Type: Article
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A high-speed Gray-binary code convertor (g.b.c.) using electro-optic light modulators, which translates all bits of Gray code into binary code simultaneously, and a binary-Gray code convertor, which translates binary into Gray code, are described. A digital-analogue convertor using g.b.c. is also presented.
Design method for monolithic analogue filters
- Author(s): R. Schaumann and J.R. Brand
- Source: Electronics Letters, Volume 14, Issue 22, p. 710 –711
- DOI: 10.1049/el:19780478
- Type: Article
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A new concept, compatible with m.o.s. or bipolar technology, for the design of monolithic analogue active filters is proposed. The method uses only ratioed capacitors as passive components and is especially suitable for the implementation of high-frequency filters. A high-Q, f0 = 1 MHz bandpass filter is presented as an example, using a total capacitance of only 58 pF.
Error-rate measurements on a 1 Gbit/s fibre-optic communications link
- Author(s): R. Petschacher ; J. Gruber ; M. Hoez
- Source: Electronics Letters, Volume 14, Issue 22, p. 711 –713
- DOI: 10.1049/el:19780479
- Type: Article
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Error-rate measurements made on a 1 Gbit/s fibre-optic communications link are described. The link utilises a GaAlAs d.h. injection laser, a 1.6 km single-mode fibre, an avalanche photo-diode and a multiplexer and demultiplexer for four 250 Mbit/s channels. A comparison of the measured results with calculated data using a Gaussian approximation showed good agreement within 2 dB.
Shift-register connections for delayed versions of m-sequences
- Author(s): A.N. van Luyn
- Source: Electronics Letters, Volume 14, Issue 22, p. 713 –715
- DOI: 10.1049/el:19780480
- Type: Article
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A fast and simple method is introduced that can be used, both manually and in computing, to determine which linear combination of shift-register outputs corresponds to a d-bit delayed version of a maximal-length linear binary sequence. The calculation time is proportional to the logarithm of d. The method is suitable for generating large phase shifts.
Substrate dependence of InP m.e.s.f.e.t. performance
- Author(s): Hadis Morkoç ; James T. Andrews ; Syed B. Hyder
- Source: Electronics Letters, Volume 14, Issue 22, p. 715 –716
- DOI: 10.1049/el:19780481
- Type: Article
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There is evidence to suggest that Fe outdiffuses, during the growth, into the epitaxial films prepared by vapour-phase epitaxy at 650°C. Field-effect transistors on Fe-doped material show substantial looping that was absent on Cr-doped material and exhibit about 2 dB worse noise figure at about 7 GHz. Experiments with low 1015 S-doped InP grown on Sn-, Cr- and Fe-doped substates indicate that such outdiffusion is typically about 5 μm. Saturation velocity levels in the m.e.s.f.e.t. channel are about 1.7 × 107 cm/s and 1.3 × 107 cm/s, associated with Cr and Fe doped substrates, respectively.
Simple expression for light output of edge-emitting d.h. l.e.d.s
- Author(s): Dan Botez ; Peter Zory ; Michael J. Brady
- Source: Electronics Letters, Volume 14, Issue 22, p. 716 –718
- DOI: 10.1049/el:19780482
- Type: Article
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A relatively simple expression for the output power of edge emitters has been obtained by defining a net loss coefficient averaged over all wavelengths, and using the radiation confinement-factor concept. The model is verified with experimental data from (AlGa)As l.e.d.s of varying stripe contact length.
Parameter estimation in uncertain models of nonlinear dynamic systems
- Author(s): D.J. Leal ; G. Georgantzis ; P.D. Roberts
- Source: Electronics Letters, Volume 14, Issue 22, p. 718 –720
- DOI: 10.1049/el:19780483
- Type: Article
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An extension of the classical least-squares identification technique is described and applied in a digital simulation study of a simple chemical reactor.
Electrical properties of laser-annealed donor-implanted GaAs
- Author(s): B.J. Sealy ; S.S. Kular ; K.G. Stephens ; R. Croft ; A. Palmer
- Source: Electronics Letters, Volume 14, Issue 22, p. 720 –721
- DOI: 10.1049/el:19780484
- Type: Article
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A Q-switched ruby laser has been used to anneal GaAs implanted with selenium or tellurium ions. Electron concentrations in the range 1–2 × 1019 cm−3 were measured for samples implanted at room temperature or 200°C with a dose of 1–5 × 1015 ions cm−2. High electrical activities were obtained both with and without Si3N4 coatings.
Ford-girling equivalent circuit using c.c.II
- Author(s): A.M. Soliman
- Source: Electronics Letters, Volume 14, Issue 22, p. 721 –722
- DOI: 10.1049/el:19780485
- Type: Article
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A new configuration equivalent to the well known Ford-Girling circuit and using c.c.II instead of the o.a. is given. Applications and advantages of the new realisation are discussed.
Erratum: Interaction of high-frequency sound with fibre-guided coherent light
- Author(s): D. Howard and T.J. Hall
- Source: Electronics Letters, Volume 14, Issue 22, page: 722 –722
- DOI: 10.1049/el:19780486
- Type: Article
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Erratum: Effect of neutron and gamma irradiation on the low-frequency noise in GaAs m.e.s.f.e.t.s
- Author(s): S.B. Moghe ; R.J. Gutmann ; M.J. Chudzick ; J.M. Borrego
- Source: Electronics Letters, Volume 14, Issue 22, page: 722 –722
- DOI: 10.1049/el:19780487
- Type: Article
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