Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 14, Issue 21, 12 October 1978
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Volume 14, Issue 21
12 October 1978
Ion-implanted p–n junction indium-phosphide impatt diodes
- Author(s): J.J. Berenz ; F.B. Fank ; T.L. Hierl
- Source: Electronics Letters, Volume 14, Issue 21, p. 683 –684
- DOI: 10.1049/el:19780461
- Type: Article
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p.
683
–684
(2)
Implantation of beryllium ions into a uniformly doped n-type InP epitaxial layer grown by vapour-phase epitaxy has been utilised to create a p+–n junction for flat-profile single-drift impatt diodes. An r.f. performance comparable to gallium arsenide has been obtained. A c.w. output power of 1.6 W with 11.1% conversion efficiency has been measured at 9.78 GHz and a peak power of 6.1 W with 13.7% efficiency has been measured at 10.8 GHz with 10% duty cycle. The f.m. noise of the c.w. oscillators is comparable to results reported for silicon.
Impedance of a circular-disc printed-circuit antenna
- Author(s): Stuart A. Long ; Liang C. Shen ; Mark D. Walton ; Martin R. Allerding
- Source: Electronics Letters, Volume 14, Issue 21, p. 684 –686
- DOI: 10.1049/el:19780462
- Type: Article
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p.
684
–686
(3)
The driving-point impedance of a printed-circuit antenna consisting of a circular disc separated by a dielectric from a ground plane is investigated experimentally. The impedance is measured as a function of the operating frequency for various disc diameters, thicknesses and permittivities of the dielectric and feed point positions. In addition, a theoretical parallel RLC circuit model is proposed and compared with the experimental data.
Reducing noise in recursive digital filters by residue retention
- Author(s): Philip G. McCrea and Ian H. Witten
- Source: Electronics Letters, Volume 14, Issue 21, p. 686 –688
- DOI: 10.1049/el:19780463
- Type: Article
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p.
686
–688
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This letter describes the application of residue-retention techniques, normally associated with digital differential analysers, to reduce round-off noise within short-word-length implementations of recursive digital filters. Simulations show significant improvements over single- and partial double-precision realisations, especially if high sampling rates are used.
Length-expander composite transducer and resonator excited by a perpendicular electric field
- Author(s): C. Duchet
- Source: Electronics Letters, Volume 14, Issue 21, p. 688 –690
- DOI: 10.1049/el:19780464
- Type: Article
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p.
688
–690
(3)
A model is developed for length-expander composite transducers and resonators excited by a perpendicular electric field. Theoretical and experimental results are reported for several structures of resonators made with metal and lithium niobate as piezoelectric materials.
Implanted Si m.o.s.f.e.t.s for high-speed applications
- Author(s): U. Niggebrügge ; C. Tsironis ; W. Filensky ; P. Balk ; H. Beneking
- Source: Electronics Letters, Volume 14, Issue 21, p. 690 –691
- DOI: 10.1049/el:19780465
- Type: Article
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p.
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–691
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Si m.o.s.f.e.t.s with a channel length of 0.8 μm have been fabricated using boron implantation to adjust the threshold voltage. With microwave design appropriate to keeping the parasitics small, fmax values between 10 and 12 GHz are realised also with ion implantation. Large-signal switching times of 48 ps, small-signal switching times of 44 ps and delay times of 50 ps have been achieved.
Scratch filter using c.c.d.s
- Author(s): A.H. James ; G.A.C. Cutler ; N.S. Shinn ; D.V. McCaughan
- Source: Electronics Letters, Volume 14, Issue 21, p. 691 –692
- DOI: 10.1049/el:19780466
- Type: Article
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p.
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–692
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This letter describes the use of charge-coupled devices in the automatic real-time editing of audio signals. A simple semiconductor device is used to replace a number of complex digital circuits.
Transmission of microwave signals through an e.h.v. insulator for application to e.h.v. electronic current-sensing systems
- Author(s): D.V. Otto
- Source: Electronics Letters, Volume 14, Issue 21, p. 692 –693
- DOI: 10.1049/el:19780467
- Type: Article
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p.
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–693
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It is shown how a conventional solid-core e.h.v. post insulator can be adapted for use as a fairly low-loss, physically robust, microwave transmission link for use in unconventional e.h.v. electronic current-sensing systems. Coupling into and out of the insulator is by way of an interesting adaptation of the short backfire antenna.
Fractional spontaneous emission coupled into AlGaAs laser mode
- Author(s): Minoru Ito and Susumu Machida
- Source: Electronics Letters, Volume 14, Issue 21, p. 693 –695
- DOI: 10.1049/el:19780468
- Type: Article
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p.
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–695
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Spontaneous-emission power coupled into laser modes in AlGaAs double-heterostructure lasers is evaluated experimentally. The power fraction is proportional to V−1.5.
Amorphous-layer formation in GaAs by ion implantation
- Author(s): Min-Shyong Lin
- Source: Electronics Letters, Volume 14, Issue 21, p. 695 –697
- DOI: 10.1049/el:19780469
- Type: Article
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–697
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Optical absorption is measured in situ a few seconds after 60 keV ion implantation to study the amorphous-layer formation in GaAs. The results indicate that the energy required to transfer the crystalline state to amorphous state during room-temperature implantation is approximately 1.7×1024 eV/cm3 or 40 eV per atom, which is independent of ion species.
Simple method for computing elements of order 2kn, where n|2p−1−1 and 2 ≤ k ≤ p+1, in GF[(2p−1)2]
- Author(s): I.S. Reed ; T.K. Truong ; R.L. Miller
- Source: Electronics Letters, Volume 14, Issue 21, p. 697 –698
- DOI: 10.1049/el:19780470
- Type: Article
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p.
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–698
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A simple method is developed for computing elements of order 2kn, where n|2p−1−1 and 2 ≤ k ≤ p+1, in the Galois field GF(q2), and q = 2p−1 is a Mersenne prime. Such primitive elements are needed to implement complex number-theoretic transforms.
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