Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 14, Issue 1, 5 January 1978
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Volume 14, Issue 1
5 January 1978
Novel m.o.s. differential amplifier for sampled-data applications
- Author(s): P.B. Denyer and J. Mavor
- Source: Electronics Letters, Volume 14, Issue 1, p. 1 –2
- DOI: 10.1049/el:19780001
- Type: Article
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A novel form of differential amplifier is reported which employs a simple, capacitive input differential circuit in place of the conventional differential pair and current source. The amplifier is especially suitable for monolithic integration in an m.o.s. technology, and generates a time-multiplexed, sampled data output signal compatible with many current signal processing techniques.
Electrical profiles from zinc implanted GaAs
- Author(s): S.S. Kular ; B.J. Sealy ; K.G. Stephens
- Source: Electronics Letters, Volume 14, Issue 1, p. 2 –4
- DOI: 10.1049/el:19780002
- Type: Article
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Hole concentration and mobility profiles have been measured for 1015Zn+/cm2 implanted into GaAs at room temperature. After annealing at 800°C the peak hole concentration for a 60 keV implant was in excess of 1019 holes/cm3 and decreased with increasing energy up to 450 KeV.
Simple method of designing suboptimal dynamic controllers for discrete linear systems
- Author(s): C.S. Berger
- Source: Electronics Letters, Volume 14, Issue 1, p. 4 –5
- DOI: 10.1049/el:19780003
- Type: Article
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A difference equation representation for suboptimal dynamic controllers enables the use of a simple design algorithm for discrete systems.
An equivalent focused reflector feed in place of any generalised defocused or extended feed
- Author(s): W.V.T. Rusch
- Source: Electronics Letters, Volume 14, Issue 1, p. 5 –7
- DOI: 10.1049/el:19780004
- Type: Article
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A procedure is presented whereby generalised reflector feeds with near-field and/or defocused properties can be replaced by an equivalent point-source feed located at the origin. The equivalent feed induces identical reflector currents and consequently yields identical scattered fields. Thus all physical optics reflector analysis can be carried out in terms of a focused point-source illumination function.
Intensity fluctuations of injection lasers operated with high frequency modulation
- Author(s): Werner R. Lange
- Source: Electronics Letters, Volume 14, Issue 1, p. 7 –8
- DOI: 10.1049/el:19780005
- Type: Article
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The photon noise of the injection laser is greater when it is modulated with high-frequency signals than in d.c. operation. With the aid of Langevin-noise sources the spectrum of the intensity fluctuations during the turn-on of the laser is calculated. It is shown that the pulse repetition frequency should be as low as possible.
An improvement in printed circuit board routability using a maze-running algorithm
- Author(s): L.S. Pugh
- Source: Electronics Letters, Volume 14, Issue 1, p. 8 –9
- DOI: 10.1049/el:19780006
- Type: Article
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The inherent simplicity in operation of a routing algorithm based on a maze-running technique, makes it a suitable starting point in the development of a more efficient algorithm (in terms of routability, storage requirements, running time). Results from a computer program implementation of a suitable algorithm show a significant improvement in performance for low processing cost.
GaAs varactor diodes for u.h.f. TV tuners fabricated by ion implantation
- Author(s): Ikuo Niikura ; Nobuyuki Toyoda ; Yasuo Shimura ; Sakae Yokoyama ; Minoru Mihara ; Takeshi Hayashi ; Tohru Hara
- Source: Electronics Letters, Volume 14, Issue 1, p. 9 –10
- DOI: 10.1049/el:19780007
- Type: Article
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Gallium-arsenide varactor diodes have been developed by using ion implantation techniques. Diode series resistance is around 0.25 Ω and uniform among diodes. The standard deviation of resistance distribution is 11.6%. Capacitance variation ratio, C3/C25, is about 5.7.
Limitations of zinc sulphide leaky waveguide electro-optic modulators
- Author(s): P.L. Jones and D.R. Cotton
- Source: Electronics Letters, Volume 14, Issue 1, p. 10 –12
- DOI: 10.1049/el:19780008
- Type: Article
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Design criteria for relative-phase optical-waveguide modulators are established for single-crystal thin films of zinc sulphide grown on silicon. It is found that the minimum guide length is limited by voltage breakdown to 2 mm while for high frequency applications, because of the leaky nature of the guiding region, the maximum available length and thickness of zinc sulphide are the limiting factors.
On 2-variable reactance functions for 2-dimensional recursive filter design
- Author(s): Amar M. Ali and A.G. Constantinides
- Source: Electronics Letters, Volume 14, Issue 1, p. 12 –13
- DOI: 10.1049/el:19780009
- Type: Article
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The use of 2-variable reactance functions for designing stable 2-dimensional recursive filters is critically examined. The investigation shows that although the stability of the resulting filters is ensured, such functions do not preserve the amplitude characteristics of the 1-dimensional filter prototype over the 2-dimensional digital domain. A special choice of reactance functions that yields best design results is discussed.
On the derivation and interpretation of the marcatili profile condition for optical fibres
- Author(s): C. Pask
- Source: Electronics Letters, Volume 14, Issue 1, p. 13 –15
- DOI: 10.1049/el:19780010
- Type: Article
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A simple geometrical derivation based on ray methods is given for the refractive-index profile condition derived by Marcatili for use in optical fibre design. The physical interpretation of the condition is discussed.
Wavelength division two-way fibre-optic transmission experiments using micro-optic duplexers
- Author(s): S. Sugimoto ; K. Minemura ; K. Kobayashi ; M. Shikada ; H. Nomura ; K. Kaede ; A. Ueki ; S. Matsushita
- Source: Electronics Letters, Volume 14, Issue 1, p. 15 –17
- DOI: 10.1049/el:19780011
- Type: Article
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Experimental two-way transmission of high-speed digital pulse signals over a single 10 km optical fibre line has been realised at 800 nm band, employing newly developed small size and low-loss micro-optic duplexers, AlGaAs d.h. lasers of different emission wavelengths, a spliced graded-index high-silica fibre and Si-a.p.d.s.
Radiation from dielectric sphere loaded horns
- Author(s): A.G. Martin
- Source: Electronics Letters, Volume 14, Issue 1, p. 17 –18
- DOI: 10.1049/el:19780012
- Type: Article
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The measured radiation pattern of a dielectric sphere fed from a conical horn is given. An appropriate matching device is shown to be a circular dielectric rod in the horn. Improvements in gain and circularity of the beam obtained by dielectric loading are demonstrated.
Bandwidth and demodulation gain in q.s.s.b. f.m.
- Author(s): L. Verrazzani
- Source: Electronics Letters, Volume 14, Issue 1, p. 18 –19
- DOI: 10.1049/el:19780013
- Type: Article
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Expressions for the bandwidth and the output to input signal/noise ratio in quasisingle sideband f.m. are derived as a function of the modulation index and the peak input amplitude to the exponentiator, to show that q.s.s.b. f.m. provides higher demodulation gains, while requiring approximately the same bandwidth as s.s.b. f.m.
GaAs m.a.o.s.f.e.t. memory transistor
- Author(s): B. Bayraktaroglu ; A. Colquhoun ; H.L. Hartnagel
- Source: Electronics Letters, Volume 14, Issue 1, p. 19 –21
- DOI: 10.1049/el:19780014
- Type: Article
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A new non-volatile memory device is reported. This device is a GaAs m.o.s.f.e.t. with charge storage in the gate in which is a double oxide structure of aluminium oxide and GaAs native oxide, both oxides are grown anodically. The fabrication of the device is described and the results of initial measurements on the charging and charge retention properties are presented.
Some effects of wave propagation in the gate of a microwave m.e.s.f.e.t.
- Author(s): P.H. Ladbrooke
- Source: Electronics Letters, Volume 14, Issue 1, p. 21 –22
- DOI: 10.1049/el:19780015
- Type: Article
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In microwave field-effect transistors there is a progressive phase delay as a signal propagates along the gate, with a corresponding delay in channel modulation across the width of the transistor. It is shown that this leads to a phase lag in gm while the modulus of gm is comparatively unaffected.
Comparison of electrical profiles from hot and cold implantations of zinc ions into GaAs
- Author(s): S.S. Kular ; B.J. Sealy ; K.G. Stephens
- Source: Electronics Letters, Volume 14, Issue 1, p. 22 –23
- DOI: 10.1049/el:19780016
- Type: Article
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Hole concentration and mobility profiles have been measured as a function of dose for 450 keV zinc ions implanted into GaAs. For doses above 1014 ions/cm2 implanted at 200°C very broad profiles were obtained suggesting that significant indiffusion has occurred. However, much narrower profiles were obtained after implanting at room temperature. Peak hole concentrations were in the range 1018–1019 holes/cm3.
High-accuracy extraction of buried-channel m.o.s. transistor threshold voltages
- Author(s): L. Gabler ; B. Hoefflinger ; J. Schneider ; G. Zimmer
- Source: Electronics Letters, Volume 14, Issue 1, p. 23 –24
- DOI: 10.1049/el:19780017
- Type: Article
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A new experimental method is presented, which yields threshold voltages and their dependence on substrate bias for buried-channel, usually ion-implanted m.o.s. transistors with an accuracy typically < 10 mV. The extraction follows from two current measurements in the linear region, one as a function of gate voltage and fixed substrate bias, the other as a function of substrate bias roughly at the flat-band voltage.
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