Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 13, Issue 2, 20 January 1977
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Volume 13, Issue 2
20 January 1977
Efficient bulk wave excitation on ST quartz
- Author(s): K.H. Yen ; K.L. Wang ; R.S. Kagiwada
- Source: Electronics Letters, Volume 13, Issue 2, p. 37 –38
- DOI: 10.1049/el:19770027
- Type: Article
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Efficient excitation and detection of bulk waves on rotated 90° ST quartz are reported. Experimental results on three different transducer configurations are given and the possible applications are discussed.
Asymptotically optimal soft decision decoding algorithms for Hamming codes
- Author(s): C.-E. Sundberg
- Source: Electronics Letters, Volume 13, Issue 2, p. 38 –40
- DOI: 10.1049/el:19770028
- Type: Article
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Asymptotically optimal soft decision decoding algorithms for d = 3 and d = 4 Hamming codes are given and analysed. Only error sequences with probability exponent larger than that of maximum-likelihood decoding are corrected. Upper bounds on the block error probability for the Gaussian channel are given.
Improving the large-signal models of bipolar transistors by dividing the intrinsic base into two lateral sections
- Author(s): H.-M. Rein
- Source: Electronics Letters, Volume 13, Issue 2, p. 40 –41
- DOI: 10.1049/el:19770029
- Type: Article
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In large-signal transistor models, the lateral voltage drop across the base region is usually represented by a single-lump constant base spreading resistance. The letter demonstrates, for the switching mode, that a much better approximation of the 2-dimensional transistor can already be achieved by dividing the intrinsic base into merely two sections (2-section model).
Determination of refractive index and ellipticity of an unclad elliptical optical fibre
- Author(s): P.L. Chu ; C. Saekeang ; Y.M. Chow
- Source: Electronics Letters, Volume 13, Issue 2, p. 41 –42
- DOI: 10.1049/el:19770030
- Type: Article
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A simple, fast, accurate and nondestructive method of measuring the refractive index and ellipticity of an elliptic optical fibre is presented. This method requires only the measurement of the rainbow angles of the backward scattered patterns of the laser beams parallel to the major and minor axes of the ellipse.
Search procedure for efficient superdirective array and image enhancement functions
- Author(s): A.P. Anderson ; M.M. Dawoud ; J.C. Bennett ; P.D. Patel
- Source: Electronics Letters, Volume 13, Issue 2, p. 43 –44
- DOI: 10.1049/el:19770031
- Type: Article
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A technique is presented for generation of efficient superdirective array functions, using a composite polynomial based on the Cheby̅shev polynomials. The generated radiation pattern has a narrow main beam with high radiation efficiency, indicative of an array function which is tolerant to elemental amplitude and phase errors.
Stable charge storage of m.a.o.s. diodes on GaAs by new anodic oxidation
- Author(s): B. Bayraktaroglu ; S.J. Hannah ; H.L. Hartnagel
- Source: Electronics Letters, Volume 13, Issue 2, p. 45 –46
- DOI: 10.1049/el:19770032
- Type: Article
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A method of native-oxide anodisation on GaAs, incorporating an Al2 O3 layer, is described. It is shown that such composite oxides on GaAs have superior electrical and physical characteristics to a system of native oxide only.
3-level conduction-band structure of GaAs from high-stress and high-field measurements
- Author(s): A.R. Adams ; P.J. Vinson ; C. Pickering ; G.D. Pitt ; W. Fawcett
- Source: Electronics Letters, Volume 13, Issue 2, p. 46 –48
- DOI: 10.1049/el:19770033
- Type: Article
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Experimental and theoretical studies of both the hydrostatic pressure and uniaxial stress dependence of transferred-electron effects have shown that the L1c are below the X1c minima in GaAs. These are presented and compared with most recent optical measurements. The inferred electrical properties of GaAs and its alloys are discussed.
New correlation identities for periodic sequences
- Author(s): D.V. Sarwate and M.B. Pursley
- Source: Electronics Letters, Volume 13, Issue 2, p. 48 –49
- DOI: 10.1049/el:19770034
- Type: Article
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Identities are established which relate certain crosscorrelation parameters for periodic real-valued sequences to their autocorrelation functions. Applications to multiple-access communication systems and to the design of uncorrelated sequences are discussed.
Pulse distortion in single-mode fibres with microbending
- Author(s): K. Petermann
- Source: Electronics Letters, Volume 13, Issue 2, p. 49 –51
- DOI: 10.1049/el:19770035
- Type: Article
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The pulse distortion due to energy reconversion from higher-order modes into the fundamental mode in randomly bent single-mode fibres is calculated. Pulse distortion can be reduced by either introducing mode filters or by a sufficiently large attenuation of the higher-order modes. Simple design considerations are given.
Refractive-index profiles of stress-induced (embossed) optical waveguides
- Author(s): P.V.H. Sabine
- Source: Electronics Letters, Volume 13, Issue 2, p. 51 –52
- DOI: 10.1049/el:19770036
- Type: Article
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Low-loss stress-induced light guides have been fabricated by an embossing process. The results of interferometric and near-field scan measurements of the refractive index profile of these waveguides are presented.
Impedance approximations for resistive conductor cable
- Author(s): P.A. McGovern
- Source: Electronics Letters, Volume 13, Issue 2, p. 52 –53
- DOI: 10.1049/el:19770037
- Type: Article
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An asymptotic sequence of finite network approximations is obtained for the characteristic impedance at high frequencies of transmission line with constant series resistance. The model is relevant to the design of oscilloscope passive attenuator probes with nanosecond response time using low-capacitance cable with fine-resistance-wire centre conductor.
Tunable Raman fibre-optic laser
- Author(s): D.C. Johnson ; K.O. Hill ; B.S. Kawasaki ; D. Kato
- Source: Electronics Letters, Volume 13, Issue 2, p. 53 –55
- DOI: 10.1049/el:19770038
- Type: Article
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Continuous tuning of the oscillation frequency of a continuous-wave Raman fibre-optic laser has been demonstrated. The device operates over a 3 nm band in the visible range and exhibits low threshold and high conversion efficiency.
Optical absorption characteristics of hydroxyl radicals in phosphorus-containing silica glass
- Author(s): Yoh Mita ; Shigeo Matsushita ; Tomoo Yanase ; Hidenori Nomura
- Source: Electronics Letters, Volume 13, Issue 2, p. 55 –56
- DOI: 10.1049/el:19770039
- Type: Article
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The optical absorption of hydroxyl radicals in phosphorus-containing silica glass were measured both for fundamental and harmonic absorptions. It was shown that a larger part of the OH radicals are permanently trapped at phosphorus sites and are eliminated from contributing to optical losses in communication-type optical fibres.
Edge condition and mode-matching solutions in the presence of gyrotropic media
- Author(s): M. Hoffmann
- Source: Electronics Letters, Volume 13, Issue 2, p. 56 –57
- DOI: 10.1049/el:19770040
- Type: Article
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Electromagnetic fields can become singular at edges. To ensure the uniqueness of the solution, the edge condition has to be fulfilled, which limits the grade of the singularity. The behaviour of the field at an edge formed by a perfect conductor and a ferrite magnetised to saturation parallel to the edge is presented.
Distortionless vestigial-sideband transmission with symmetric delay about the carrier frequency and synchronous demodulation
- Author(s): W.E. Thomson
- Source: Electronics Letters, Volume 13, Issue 2, p. 58 –59
- DOI: 10.1049/el:19770041
- Type: Article
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The general amplitude condition is (MU – ML)2 + MU ML/MO2 = 1. where MU and ML are upper and lower sideband amplitudes and MO ≥ ½ is arbitrary. The demodulating carrier phase θ is determined from MO cos (θ+ϕ) = ½, where ϕO is the phase shift at the carrier. The delay condition is ϕU = ϕL′ = T±(MU ML′ + MU′ ML) MO−1|sin (θ+ϕO)|, where ϕU′ and ϕL′ are upper and lower sideband delays and T is an arbitrary constant. The value MO = ½ gives the well known ‘constant-sideband-sum’ condition and MO = 1/√2 the recently discovered ‘constant-sideband-squared-sum’ condition.
Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode
- Author(s): Nobuo Hashizume ; Shoei Kataoka ; Kazutaka Tomizawa
- Source: Electronics Letters, Volume 13, Issue 2, p. 60 –61
- DOI: 10.1049/el:19770042
- Type: Article
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A new Gunn-effect memory device using the charge accumulation on a Schottky-trigger electrode is proposed and its operation demonstrated with a monolithically fabricated device. Theoretical calculations show that the device could be modified into a static memory device if the Schottky electrode potential is chosen as the output.
Comment on ‘Efficient generation technique for polynomial codesets‘ [and reply]
- Author(s): D.V. Sarwate and L.F. Lind
- Source: Electronics Letters, Volume 13, Issue 2, p. 61 –62
- DOI: 10.1049/el:19770043
- Type: Article
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