Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 13, Issue 17, 18 August 1977
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Volume 13, Issue 17
18 August 1977
Inverse optimal control problem for linear discrete-time systems
- Author(s): J. Willems and H. Van De Voorde
- Source: Electronics Letters, Volume 13, Issue 17, page: 493 –493
- DOI: 10.1049/el:19770361
- Type: Article
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p.
493
(1)
In the letter, the inverse control problem for linear discretetime systems is considered. A criterion is stated for the optimality of a linear feedback control for single-input systems. Differences with continuous-time systems are discussed.
Transparent, highly sensitive GaAs/(GaAl)As photodiode
- Author(s): W. Eickhoff ; P. Marschall ; E. Schlosser
- Source: Electronics Letters, Volume 13, Issue 17, p. 493 –494
- DOI: 10.1049/el:19770362
- Type: Article
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p.
493
–494
(2)
The letter describes the performance and properties of a transparent GaAs/(GaAl)As photodiode. The diodo can be inserted directly into an optical-fibre transmission line. By this means, it becomes possible to couple out a small amount of the light power guided within the fibre in tho form of an electrical signal.
Measurements of the electron accumulation on two Schottky diodes connected metal to metal
- Author(s): Nobuo Hashizume ; Shoei Kataoka ; Kazutaka Tomizawa
- Source: Electronics Letters, Volume 13, Issue 17, p. 495 –496
- DOI: 10.1049/el:19770363
- Type: Article
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p.
495
–496
(2)
Electron accumulation on the metal sides of two Schottky diodes connected metal to metal was observed as a result of the temporary variation of bias between the semiconductor sides of both diodes. The potential of the metals was found to be predictable by a theory based on a property of the Schottky diode.
Theory of depletion-layer recombination in silicon p–n junctions
- Author(s): P.J. Anderson and M.J Buckingham
- Source: Electronics Letters, Volume 13, Issue 17, p. 496 –498
- DOI: 10.1049/el:19770364
- Type: Article
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p.
496
–498
(3)
A new theory of depletion-layer recombination in silicon p-n junctions is presented, based on the recombination statistics of 3-charge-state centres. It is shown that, with an appropriate choice of recombination-centre parameters, the forward current/voltage characteristics predicted by the theory show voltage-independent m values of ̃1.5.
Intersymbol-interference error bounds for hard-limited satellite channels
- Author(s): N. Ekanayake and D.P. Taylor
- Source: Electronics Letters, Volume 13, Issue 17, p. 498 –500
- DOI: 10.1049/el:19770365
- Type: Article
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p.
498
–500
(3)
Upper and lower bounds on the probability of error for binary p.s.k. signals received over a hard-limited satellite channel in the presence of intersymbol interference are derived. Comparison with previously derived numerical results computed for a hard-limited channel containing a Chebyshev filter indicates that the bounds are reaionably tight.
Combinational logicfree realisations for high-speed m-sequence generation
- Author(s): A.C. Arvillias and D.G. Maritsas
- Source: Electronics Letters, Volume 13, Issue 17, p. 500 –502
- DOI: 10.1049/el:19770366
- Type: Article
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p.
500
–502
(3)
A combinational logicfree F.S.R. construction is specified which allows the high speed generation of m-sequences. These constructions are based on characteristic polynomials of the form (1 ⊕ x)q ⊕ xp and they can be designed so as to produce sequences based on primitive trinomial recurrences of the form xn = xn–q ⊕ xn–p at a rate q times as fast as the basic shift pulse rate.
Identification of nonlinear systems using the Wiener model
- Author(s): S.A. Billings and S.Y. Fakhouri
- Source: Electronics Letters, Volume 13, Issue 17, p. 502 –504
- DOI: 10.1049/el:19770367
- Type: Article
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p.
502
–504
(3)
An algorithm for the identification of nonlinear systems which can be described by a Wiener model consisting of a linear system followed by a single-valued nonlinearity is presented. Crossconolation techniques are employed to decouple the identification of the linear dynamics from the characterisation of the nonlinear element.
Contact-degradation studies on GaAs transferred-electron devices using a focused backscattering technique
- Author(s): C.J. Palmström ; D.V. Morgan ; M.J. Howes
- Source: Electronics Letters, Volume 13, Issue 17, p. 504 –505
- DOI: 10.1049/el:19770368
- Type: Article
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p.
504
–505
(2)
Focused backscattering microanalysis has been used to overcome some of the problems associated with conventional backscattering. The small beam size enables the study of (a) small areas typical of real microwave devices, (b) lateral variations of the contact interdiffusion and (c) deep profiles when used in conjunction with angle lapped samples.
Circuits for the precise synthesis of the sine function
- Author(s): Barrie Gilbert
- Source: Electronics Letters, Volume 13, Issue 17, p. 506 –508
- DOI: 10.1049/el:19770369
- Type: Article
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p.
506
–508
(3)
Bipolar circuits are described for generating the sine function with high accuracy from an analogue angle input. The teachnique offers operation over any number of quadrants without switching high bandwidth and circuit simplicity. The identity of the sine to a summation of tanh terms is utilised, a proof of which is provided.
Modelling the 3rd-order intermodulation-distortion properties of a GaAs f.e.t.
- Author(s): R.S. Tucker and C. Rauscher
- Source: Electronics Letters, Volume 13, Issue 17, p. 508 –510
- DOI: 10.1049/el:19770370
- Type: Article
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p.
508
–510
(3)
A simple analytical model of the 3rd-order intermodulation-distortion properties of a GaAs field-effect transistor is proposed. The model takes into account the distortion-producing nonlinearities of the Schottky-bairier junction, the trans-conductance and the drain conductance. Parameters of the model are presented for a GaAs f.e.t. of 0.5 μm gate length, and the model-predicted distortion characteristics are compared with measured data.
Optimim design for a broadband microstrip balun
- Author(s): D.M.L. Bartholomew
- Source: Electronics Letters, Volume 13, Issue 17, p. 510 –511
- DOI: 10.1049/el:19770371
- Type: Article
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p.
510
–511
(2)
The letter reports calculations of Marchand balun performance which show that bandwidths approaching 50:1 (for a V.S.W.I.≤2:1) should be achievable with overlaid microstrip structures. The bandwidth limits (≲8:1) reported by previous writers appear to reflect only the inaccessibility of the true optimum to the semiempirical design methods used and the limitations of fabrication on single-thickness card. Preliminary experimental results confirm the theoretical indications.
Modelling technique for an f.e.t. chip
- Author(s): S.O. Ajose and N.A. Mathews
- Source: Electronics Letters, Volume 13, Issue 17, p. 511 –512
- DOI: 10.1049/el:19770372
- Type: Article
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p.
511
–512
(2)
A technique for modelling an f.e.t. chip is presented. First, the device is characterised in its 2-port S-parameters. Then, by choosing a suitable equivalent circuit and reasonable starting values, a simplex optimisation procedure is employed to obtain optimum component values for the equivalent circuit.
Uncertainties of the leaky mode correction for near-square-law optical fibres
- Author(s): K. Petermann
- Source: Electronics Letters, Volume 13, Issue 17, p. 513 –514
- DOI: 10.1049/el:19770373
- Type: Article
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p.
513
–514
(2)
It is shown that the leaky-mode correction as used, for example, for the near-field scanning technique, becomes uncertain for near-square-law fibres if they deviate from perfect circular symmetry. Results for the transition of the leaky-mode behaviour are presented.
Radar calibration by using frequency domain measurements
- Author(s): C.E. Pykett and C.D. Watkins
- Source: Electronics Letters, Volume 13, Issue 17, p. 514 –516
- DOI: 10.1049/el:19770374
- Type: Article
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p.
514
–516
(3)
A calibration technique is described that uses a rotating corner reflector of known echoing area as a secondary calibration standard. Audio-frequency Doppler signals from the radar are recorded on a low-bandwidth magnetic-tape recorder. Offline frequency-domain analysis is then used to calibrate the radar in terms of absolute echoing area.
Crosspolar variations on a satellite-Earth path
- Author(s): J. Thirlwell ; D.M. Knox ; R.G. Howell
- Source: Electronics Letters, Volume 13, Issue 17, p. 516 –518
- DOI: 10.1049/el:19770375
- Type: Article
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p.
516
–518
(3)
Abrupt changes in crosspolar phase, in the region of 180°, and associated crosspolar signal nulls have been measured on a 30 GHz satellite–Earth slant path. Unlike previous reports, these changes were not associated with thuderstorm activity. Large differential phase shifts, typically 25°, are seen to be associated with depolarisation events which are unaccompanied by significant copolar attenuation.
Waveguide antenna switches using p-i-n diodes
- Author(s): G. Craven and R.R. Thomas
- Source: Electronics Letters, Volume 13, Issue 17, p. 518 –520
- DOI: 10.1049/el:19770376
- Type: Article
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p.
518
–520
(3)
A waveguide antenna switch at L-band, using mass-produced p-i-n diodes located in the aperture, is described. Low forward loss and good isolation over a bandwidth of about 30% are achieved.
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