Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 12, Issue 6, 18 March 1976
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Volume 12, Issue 6
18 March 1976
Standard-quadrature-rules approach to the evaluation of error probability in multilevel digital systems
- Author(s): S. Benedetto and R. Daffara
- Source: Electronics Letters, Volume 12, Issue 6, p. 129 –130
- DOI: 10.1049/el:19760102
- Type: Article
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A method for computing the probability of error for multilevel pulse-amplitude modulation data transmission systems is presented. It is based on the use of standard quadrature rules, and allows one to obtain very accurate results in a short computer time. Results and comparisons with previously known methods show the satisfactory performance of the proposed approach, even in critical situations.
Power conservation for reflector antennas with truncated feed patterns
- Author(s): W.V.T. Rusch and P. Cramer
- Source: Electronics Letters, Volume 12, Issue 6, p. 130 –131
- DOI: 10.1049/el:19760103
- Type: Article
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Reflector-antenna calculations using idealised truncated feed patterns can lead to incorrect values of total secondary radiated power. It is demonstrated that this discrepancy is due to the presence of higher-order spherical modes incident on the reflector. When a proper spherical-wave expansion of the incident field is used, in conjunction with the physical-optics technique, to determine the scattered field, the total power of the scattered field will equal the power radiated by the feed.
Varactor-tunable pulsed avalanche-diode oscillator for X-band operation
- Author(s): W.R. Curtice and J.J. Risko
- Source: Electronics Letters, Volume 12, Issue 6, p. 131 –133
- DOI: 10.1049/el:19760104
- Type: Article
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A pulsed avalanche-diode oscillator operating in a microstrip circuit with a novel technique of varactor tuning is described. A tuning range of greater than 2% is obtained with a minimum output power of 6.2 W in X-band for an oscillator operated with 0.5 μs its bias pulse at duty cycles of up to 2%.
New semiconductor contact technology
- Author(s): A.B.J. Sullivan
- Source: Electronics Letters, Volume 12, Issue 6, p. 133 –134
- DOI: 10.1049/el:19760105
- Type: Article
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Metals have been deposited on semiconductors from standard plating solutions, in defined areas which have been lightly damaged by ion bombardment. The contacts are either ohmic or rectifying, depending on bombardment dose and plating conditions. The process has been used to make gallium-arsenide f.e.t.s.
Direct evaluation of a cost function in online identification techniques
- Author(s): A.J. Udink Ten Cate
- Source: Electronics Letters, Volume 12, Issue 6, p. 134 –136
- DOI: 10.1049/el:19760106
- Type: Article
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Algorithms are presented for the online evaluation of the cost or error function of discrete online identification techniques. Both a direct and a recursive algorithm are given.
Simple 2nd-order amplifier model for differential and common-mode gain
- Author(s): R.J. Mack and J.K. Fidler
- Source: Electronics Letters, Volume 12, Issue 6, p. 136 –137
- DOI: 10.1049/el:19760107
- Type: Article
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In this contribution, a simple 2nd-order model of an operational amplifier is presented. This model, which is based on the inclusion of both the first and second most dominant poles in expressions for the gain associated with the inverting and noninverting inputs to the amplifier, permits more detailed considerations of the effects of differential and common-mode gain characteristics on op. amp. circuits than is possible by using the single-dominant-pole model.
Telephone sidetone rating which includes human sidetone effects
- Author(s): C.E. Hoppitt
- Source: Electronics Letters, Volume 12, Issue 6, p. 137 –139
- DOI: 10.1049/el:19760108
- Type: Article
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A description is given of a method of sidetone rating which, unlike the commonly used sidetone reference equivalent and sidetone loudness rating, is capable of assessing the speech reaching a talker's own ear, not only by the telephone sidetone path, but also by his bone conduction path and earcap leakage airpath.
Inverse of linear systems
- Author(s): J. Feinstein and Y. Shamash
- Source: Electronics Letters, Volume 12, Issue 6, p. 139 –140
- DOI: 10.1049/el:19760109
- Type: Article
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An algorithm is given for computing the inverse of a linear time-invariant multivariable system. The algorithm, which is an extension of an existing algorithm, reduces the problem to that of inverting a polynomial matrix, and hence requires less computations. A more efficient test for determining whether a system is invertible is also given.
Durch Schaltungsmaßnahmen erhöhte Speicherzeit beim Ein-Transistor-Speicherelement (Increased storage time of a single-transistor memory cell)
- Author(s): G. Meusburger
- Source: Electronics Letters, Volume 12, Issue 6, p. 140 –141
- DOI: 10.1049/el:19760110
- Type: Article
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Es ist ein Ein-Transistor-Speicherelement mit einer neuartigen Verschaltung von Auswahltransistor and Speicherkondensator erläutert. Im Vergleich mit einem Speicherelement herkömmlicher Bauart benötigt der neuartige Entwurf ca. 20% mehr Fläche, die Speicherzeit ist aber, wie Messungen zeigen, um mehr als zwei Zehnerpotenzen günstiger.An improved single-transistor memory cell using a new connection of the selector transistor and the storage capacitor is presented. Compared with a conventional single-transistor memory cell, the area consumption is about 20% larger, but, in contrast, the storage time is increased by at least a factor of 150.
Analysis of cylindrical-to-plane-wave conversion by volume holograms
- Author(s): L. Solymar and M.P. Jordan
- Source: Electronics Letters, Volume 12, Issue 6, p. 142 –143
- DOI: 10.1049/el:19760111
- Type: Article
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The properties of volume holograms produced by the interference of a cylindrical and a plane wave are studied. By analogy with Kogelnik's treatment of the plane wave, coupled differential equations are derived, and solved, for a transmission hologram illuminated by a cylindrical wave.
Comparison of high-efficiency GaAs IMPATT designs
- Author(s): R.L. Kuvås
- Source: Electronics Letters, Volume 12, Issue 6, p. 143 –144
- DOI: 10.1049/el:19760112
- Type: Article
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Calculations of maximum generated r.f. powers are presented for GaAs single-drift Read, double-drift Read and hybrid Read structures at 10 GHz. The single-drift Read diode gives the highest output power in c.w. applications, and the double-drift design is superior in pulsed operation.
Equivalent-circuit parameters of a silicon avalanche photodiode
- Author(s): Takeshi Ozeki and A. Watanabe
- Source: Electronics Letters, Volume 12, Issue 6, p. 144 –145
- DOI: 10.1049/el:19760113
- Type: Article
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The dependence of the relative phase shift in a silicon avalanche photodiode on the multiplication is used for the determination of the intrinsic response time in the avalanche region. The value of the intrinsic response time of a silicon avalanche photodiode was found to be 0.85 ps. The procedure used to estimate the equivalent-circuit parameters of the detector is also described.
Partial decoupling in a class of nonlinear control systems
- Author(s): S.G. Tzafestas and T.G. Pimenides
- Source: Electronics Letters, Volume 12, Issue 6, p. 145 –147
- DOI: 10.1049/el:19760114
- Type: Article
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The letter treats a class of nonlinear control systems in state-space form. The problem considered is that of choosing two nonlinear feedback matrix functions F(x, t) and G(x, t) which decouple a candidate subset of the output set. The conditions under which this problem has a solution are derived and the procedure for computing the two nonlinear State feedback gain matrix functions required is given. An illustrative example is fully worked out.
C.W. oscillation with p+-p-n+ silicon IMPATT diodes in 200 GHz and 300 GHz bands
- Author(s): M. Ino ; T. Ishibashi ; M. Ohmori
- Source: Electronics Letters, Volume 12, Issue 6, p. 148 –149
- DOI: 10.1049/el:19760115
- Type: Article
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Submillimetre-wave silicon single-drift-region IMPATT diodes with a p+−p−n+ structure have been fabricated by ion implantation. C.W. output powers of 7.5 mW at 285 GHz and 78 mW at 185 GHz were obtained. The maximum c.w. oscillation frequency observed was 394 GHz.
Nonlinear analysis of mismatched transistor microwave power amplifiers
- Author(s): R.D. Mount
- Source: Electronics Letters, Volume 12, Issue 6, p. 149 –150
- DOI: 10.1049/el:19760116
- Type: Article
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Results for the response of a realistic class-C transistor microwave power amplifier to a mismatched load at various phase angles have been obtained by a fully nonlinear computer analysis, incorporating a modified Ebers—Moll transistor model.
V-groove-isolated i.i.l. circuits
- Author(s): M.J. Declercq ; J.P. de Moor ; P.G. Jespers ; A.M. Sevrin
- Source: Electronics Letters, Volume 12, Issue 6, p. 150 –151
- DOI: 10.1049/el:19760117
- Type: Article
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A new method using V-grooves for dielectric isolation of i.i.l. circuits is described. Basic devices and circuits have been realised and tested. The process results in a simplified, low-temperature isolation step and yields an increased packing density.
New star coupler compatible with single multimode-fibre data links
- Author(s): Takeshi Ozeki and B.S. Kawasaki
- Source: Electronics Letters, Volume 12, Issue 6, p. 151 –152
- DOI: 10.1049/el:19760118
- Type: Article
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A star coupler for optical data links for use with a single multimode fibre, as opposed to fibre bundles, was realised in the form of a multiport directional coupler assembled from bicorical tapers of multimode fibres. The insertion loss above furcation loss of the 4-paired-port coupler was measured to be 2.8 dB.
Erratum: Adaptive block scheme for source coding of black-and-white facsimile
- Author(s): F. De Coulon and O. Johnsen
- Source: Electronics Letters, Volume 12, Issue 6, page: 152 –152
- DOI: 10.1049/el:19760119
- Type: Article
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