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Online ISSN 1350-911X Print ISSN 0013-5194

Electronics Letters

Volume 12, Issue 22, 28 October 1976

Volumes & issues:

Volume 12, Issue 22

28 October 1976

Easy and accurate method for the characterisation of dielectric materials at X-band
  • Author(s): I.D. Higgins
  • Source: Electronics Letters, Volume 12, Issue 22, page: 573 –573
  • DOI:  10.1049/el:19760437
  • Type: Article
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  • p. 573 (1)
    A method of characterising dielectric materials at microwave frequencies is described. The technique overcomes the problem of airgaps in the commonly used ‘filled-cavity’ technique. Results of measurements of the permittivity/temperature characteristics of both quartz and a titanium loaded composite dielectric with a negative slope are presented. The accuracy of the technique is described and a high degree of repeatability demonstrated.
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Theory on long time delays, Q-switching and related phenomena in GaAs junction lasers
Experimental 4×4 optical switching network
Compensation of microstrip bends by using square cutouts
Dispersionless coupled microstrip over fused silica-like anisotropic substrates
Frequency/stress sensitivity of s.a.w. resonators
V-groove power junction field-effect transistor for v.h.f. applications
  • Author(s): T.D. Mok  and  C.A.T. Salama
  • Source: Electronics Letters, Volume 12, Issue 22, p. 582 –583
  • DOI:  10.1049/el:19760443
  • Type: Article
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  • p. 582 –583 (2)
    A new high-power, high-frequency junction field-effect transistor with a nonplanar V-shaped channel fabricated by preferential etching of 〈100〉 silicon is described. The structure of this transistor is very simple, requires only three photolithographic masking steps and results in a very high packing density. A device having an effective channel length of 2 μm was fabricated. This transistor exhibits a low-frequency transconductance of 9.6 mS/mm, a cutoff frequency of 0.9 GHz and an output power density of 25 W/mm2 of chip area.
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High-resolution guided radar system
Linearisation of microwave point-contact-detector characteristics
S.A.W. co-ordinate sensor
Better phase-modulation error performance using trellis phase codes
Moments of an output feedback system
Phase normalised m-sequences with the inphase decimation property {m(k)}={m(2k)}
  • Author(s): H. Weinrichter  and  F. Surböck
  • Source: Electronics Letters, Volume 12, Issue 22, p. 590 –591
  • DOI:  10.1049/el:19760449
  • Type: Article
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  • p. 590 –591 (2)
    The inphase decimation property of a binary sequence {f(k)} is defined such that f(k)=f(2k) for all k=0, 1, 2,… Given a primitive generator polynomial G(D) of degree r with its even and odd parts Ge(D) and Go(D), it is shown that there is a unique version of the corresponding m-sequence with this inphase decimation property, resulting as Ge(D)/G(D) if r is odd and Go(D)/G(D) if r is even. An m-sequence in such a phase position is termed the phase normalised version.
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ZOGMOST: an improved m.o.s.t. for c.c.d. peripheral circuits
  • Author(s): N. Weste  and  J. Mavor
  • Source: Electronics Letters, Volume 12, Issue 22, p. 591 –592
  • DOI:  10.1049/el:19760450
  • Type: Article
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  • p. 591 –592 (2)
    An improved formation for m.o.s. transistors fabricated with the ‘shadow-etch’ c.c.d. process is reported. The narrow self-aligned gaps produced by the process are used to provide an additional screen gate, which allows the gate-drain overlap capacitance to be minimised, thereby improving the frequency characteristics of linear and digital m.o.s. circuits. Depending on the gain of the stage involved, an improvement in the frequency performance of up to 5 times is expected, and practical results for the modified m.o.s.t. agree with this prediction.
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Bandstop iris for rectangular waveguide
Detection of shallowly buried objects
ZnO film concave transducer for focusing radiation of microwave ultrasound
Beam squint in a linearly polarised offset reflector antenna
  • Author(s): A.G.P. Boswell  and  R.W. Ashton
  • Source: Electronics Letters, Volume 12, Issue 22, p. 596 –597
  • DOI:  10.1049/el:19760454
  • Type: Article
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  • p. 596 –597 (2)
    A beam squint has been found to occur in the field radiated by an offset paraboloid antenna illuminated by a feed with linear polarisation in the plane of offset. The squint, whose existence has been confirmed by computed and measured radiation patterns, occurs in the offset plane, and is typically 0.03 of a beamwidth for a reflector of 6-wavelengths diameter. An assessment is given of the likely effect of the squint on the performance of an offset reflector radiating a circularly polarised field
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Inexpensive equipment for driving GaAs lasers with 100 ps risetime pulses
Class of majority-logic-decodable codes with a minimum distance of 4
Room-temperature 1.3 μm c.w. operation of a glass-clad Nd:y.a.g. single-crystal fibre laser end pumped with a single l.e.d.
  • Author(s): C.A. Burrus ; J. Stone ; A.G. Dentai
  • Source: Electronics Letters, Volume 12, Issue 22, p. 600 –602
  • DOI:  10.1049/el:19760457
  • Type: Article
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  • p. 600 –602 (3)
    Room-temperature c.w. laser action at 1.3 μm wavelength has been obtained using single-crystal glass-clad Nd:y.a.g. fibres end pumped with a single high-radiance l.e.d. The fibres were 0.5 cm long, 50 μm in diameter and had a cladding 3 μm thick. Threshold in a nonoptimum configuration was less than twice that at 1.06 μm. Application of a transparent, adherent glass cladding to the crystalline fibre is described.
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Cost-function minimisation in RC midseries ladder networks
Comment on ‘Electric-field control in planar Gunn-effect device with Schottky-barrier anode’ [and reply]
Erratum: Dislocation-limited minority-carrier lifetime in n-type GaP

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