Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 12, Issue 17, 19 August 1976
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Volume 12, Issue 17
19 August 1976
Presetting polynomial code generators
- Author(s): J.D. Martin
- Source: Electronics Letters, Volume 12, Issue 17, p. 421 –422
- DOI: 10.1049/el:19760321
- Type: Article
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–422
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The desirability is outlined of presetting a polynomial code generator register for a high-security data transfer. A means is described for specifying the presetting condition to give a certain final register state, and a Table is included for certain well known codes.
Attenuation/rain-rate relationships at 36 and 110 GHz
- Author(s): A.M. Zavody and B.N. Harden
- Source: Electronics Letters, Volume 12, Issue 17, p. 422 –424
- DOI: 10.1049/el:19760322
- Type: Article
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–424
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Measurements have been made simultaneously of attenuation at 36 and 110 GHz caused by rain on a 220 m terrestrial path. The relationships between attenuation and rainfall rate and between the attenuations at each frequency have been compared with theory.
Methods of separating overlapping amplitude-modulated signals
- Author(s): P.L. Taylor
- Source: Electronics Letters, Volume 12, Issue 17, p. 424 –425
- DOI: 10.1049/el:19760323
- Type: Article
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–425
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It is shown that a wanted a.m. signal may be separated completely from an accompanying unwanted a.m. signal, even when the two carrier frequencies are so close that the sidebands of the signals overlap. The methods involve synchronous demodulation by multiplication by a suitable harmonic series, instead of a single sinusoid.
Digital inductors and capacitors
- Author(s): D.N. Pim and J.M. Bullingham
- Source: Electronics Letters, Volume 12, Issue 17, p. 425 –427
- DOI: 10.1049/el:19760324
- Type: Article
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Circuits are described for simulating inductors and capacitors by digital (hardware) techniques. Filter and oscillator applications are discussed and test results are given.
Analyses of electromagnetic scattering from wire-mesh structures
- Author(s): D.A. Hill and J.R. Wait
- Source: Electronics Letters, Volume 12, Issue 17, p. 427 –428
- DOI: 10.1049/el:19760325
- Type: Article
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Various analytical and numerical methods have been developed recently to calculate the interaction of wire-mesh structures with electromagnetic waves. An intercomparison of these methods is reported for the two cases where the wire junctions are bonded and unbonded. In particular, it is found that the average boundary condition method of Kontorovich and Astrakhan appears to give valid results only if the interwire spacing of the mesh is small compared with a wavelength. However, we may safely conclude from both their work and ours that bonding the wire junctions may degrade the shielding performance of such meshes.
Fin-line dispersion
- Author(s): H. Hofmann
- Source: Electronics Letters, Volume 12, Issue 17, p. 428 –429
- DOI: 10.1049/el:19760326
- Type: Article
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p.
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–429
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The dispersion of different fin-line geometries is calculated by applying Galerkin's method to the electric fields in the slot interface. The antipodal fin line is shown to be of high interest, since its wave impedance can easily be varied from very low to high values.
Characterisation of coaxial-to-microstrip connector suitable for evaluation of microstrip 2-ports
- Author(s): S.O. Ajose ; N.A. Mathews ; C.S. Aitchison
- Source: Electronics Letters, Volume 12, Issue 17, p. 430 –431
- DOI: 10.1049/el:19760327
- Type: Article
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A method for characterising a coaxial-to-microstrip connector at X-band frequencies in terms of 5 parameters is given. The technique involves measurements on various lengths of open-circuited 50 ω lines on alumina substrates. Knowledge of the effective relative permittivity at each frequency of measurement is required, and this is obtained from measured data of the input reflection coefficient.
GaAs field-effect transistors by selective sulphur-ion implantation
- Author(s): T. Mizutani ; S. Ishida ; M. Fujimoto
- Source: Electronics Letters, Volume 12, Issue 17, p. 431 –432
- DOI: 10.1049/el:19760328
- Type: Article
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–432
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GaAs field-effect transistors without a mesa structure have been fabricated by selective sulphur-ion implantation into Cr-doped GaAs substrates. The transconductance was 16 mS and the maximum oscillation frequency was 30 GHz.
Investigation of the optical behaviour of GaAs lasers operated with pulse and sinusoidal modulation
- Author(s): D. Siemsen and J. Angerstein
- Source: Electronics Letters, Volume 12, Issue 17, p. 432 –434
- DOI: 10.1049/el:19760329
- Type: Article
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–434
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Investigation of the influence of pulse and sinusoidal modulation on the time-resolved laser spectra shows the existence of a time constant describing the optical transient behaviour. This time constant ranges from below 1 to more than 10 ns.
Optical power division in a multimode-waveguide intersection
- Author(s): M.G.F. Wilson ; C.W. Pitt ; R. Manku ; A.D. De Oliveira ; O. Parriaux
- Source: Electronics Letters, Volume 12, Issue 17, p. 434 –435
- DOI: 10.1049/el:19760330
- Type: Article
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Theorètical and experimental results are presented for a multimode, optical-waveguide intersection fabricated by an ion-exchange technique. Experimental results agree well with the simple ray analysis. The device has application as a multimode power divider or noncoupling ‘crossover’.
Return-beam-induced oscillations in self-coupled semiconductor lasers
- Author(s): T. Morikawa ; Y. Mitsuhashi ; J. Shimada ; Y. Kojima
- Source: Electronics Letters, Volume 12, Issue 17, p. 435 –436
- DOI: 10.1049/el:19760331
- Type: Article
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–436
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When a stripe-geometry heterostructure GaAlAs laser is irradiated by its own output beam, oscillations in the 1–100 MHz range are generated in the laser, and the frequency f of the oscillation varies with the length 2L of the optical path of the beam returned as f = α(c/2L), with α ≪ 1, where c is the velocity of light.
High-speed optoelectronic switching in silicon gap-shunt microstrip structures
- Author(s): W. Platte
- Source: Electronics Letters, Volume 12, Issue 17, p. 437 –438
- DOI: 10.1049/el:19760332
- Type: Article
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A new silicon microstrip device for high-speed optoelectronic switching and gating of d.c. or r.f. signals up to the gigahertz range, using a combined gap-shunt microstrip structure, is reported. The switching actions are achieved via laser-excited highly conductive solid-state plasmas
Picosecond 1-wavelength optoelectronic gate
- Author(s): R. Castagne ; S. Laval ; R. Laval
- Source: Electronics Letters, Volume 12, Issue 17, p. 438 –439
- DOI: 10.1049/el:19760333
- Type: Article
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The device is a coplanar surface transmission line in which the centre strip is broken by a gap which is short circuited by the first laser pulse. The second laser pulse, of the same wavelength, optically delayed, short circuits the centre strip to the ground plane. Turn-on and turnoff times are a few picoseconds.
New minimal-realisation algorithm from system Markov parameters
- Author(s): B. Maione and F. Torelli
- Source: Electronics Letters, Volume 12, Issue 17, p. 439 –441
- DOI: 10.1049/el:19760334
- Type: Article
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A method is given to determine a minimal realisation of a finite-dimensional linear time-invariant system from a finite set of Markov parameters (time moments). The novel feature of this approach is the direct determination of the roots of the minimal polynomial.
Errors-and-erasures decoding of binary majority-logic-decodable codes
- Author(s): D.V. Sarwate
- Source: Electronics Letters, Volume 12, Issue 17, p. 441 –442
- DOI: 10.1049/el:19760335
- Type: Article
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–442
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The decoder of a binary majority-logic decodable code can be modified to enable the correction of erasures as well as errors. The changes required in both type-I and type-II decoders are described and compared in terms of increases in decoder complexity and internal clock rates.
Synthesis of impulse-response matrices by quasilossless realisations
- Author(s): T.T. Ha
- Source: Electronics Letters, Volume 12, Issue 17, p. 442 –443
- DOI: 10.1049/el:19760336
- Type: Article
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442
–443
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It is shown that any arbitrary impulse-response matrix can be synthesised as the transfer response of a nondissipative network (quasilossless network), i.e. a network composed of time-variable gyrators and constant unit inductors.
Optical-fibre end preparation by spark erosion
- Author(s): Fr. Caspers and E.-G. Neumann
- Source: Electronics Letters, Volume 12, Issue 17, p. 443 –444
- DOI: 10.1049/el:19760337
- Type: Article
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–444
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Before splicing two optical-fibre waveguides, endfaces have to be prepared which are plane and perpendicular to the fibre axis A new method for preparing endfaces is proposed which is simple and reliable. The fibre surface is eroded by sparks and the fibre is then broken by hand.
Linear charge injection to charge-coupled devices using capacitive metering
- Author(s): R.C. Tozer and G.S. Hobson
- Source: Electronics Letters, Volume 12, Issue 17, p. 444 –445
- DOI: 10.1049/el:19760338
- Type: Article
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–445
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The input circuit of a charge-coupled device has the form of an m.o.s.f.e.t. Linear charge injection has been achieved by the negative feedback caused by a capacitor connected in series with the equivalent source electrode. The capacitor charge is reset between each sampling event. The distortion is similar to that obtained with fill-and-spill techniques, and the input voltage amplitude is more convenient.
Microwave measurements on dust, using an open resonator
- Author(s): I.Y. Ahmed and L.J. Auchterlonie
- Source: Electronics Letters, Volume 12, Issue 17, p. 445 –446
- DOI: 10.1049/el:19760339
- Type: Article
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–446
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The measurement at 10 GHz of the refractive index and tan δ for fine powders, sparsely distributed in the atmosphere, is reported. The realisation of a uniform density of particles within a large resonator is discussed.
Alternative iterative digital multiplier based on cellular arrays of r.o.m.s
- Author(s): T.J. Chung and S.D. Bedrosian
- Source: Electronics Letters, Volume 12, Issue 17, p. 447 –448
- DOI: 10.1049/el:19760340
- Type: Article
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An alternative and even more economical iterative-array-multiplier design is presented using only half the number of r.o.m.s each half the size as our earlier version. It is shown to perform simple multiply operations with one-third saving in computation time. Thus, with a 30 ns clock, 48×48 bit multiplication takes 2.88 μs.
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