Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 11, Issue 9, 1 May 1975
Volumes & issues:
-
Volume 59 (2023)
-
Volume 58 (2022)
-
Volume 57 (2021)
-
Volume 56 (2020)
-
Volume 55 (2019)
-
Volume 54 (2018)
-
Volume 53 (2017)
-
Volume 52 (2016)
-
Volume 51 (2015)
-
Volume 50 (2014)
-
Volume 49 (2013)
-
Volume 48 (2012)
-
Volume 47 (2011)
-
Volume 46 (2010)
-
Volume 45 (2009)
-
Volume 44 (2008)
-
Volume 43 (2007)
-
Volume 42 (2006)
-
Volume 41 (2005)
-
Volume 40 (2004)
-
Volume 39 (2003)
-
Volume 38 (2002)
-
Volume 37 (2001)
-
Volume 36 (2000)
-
Volume 35 (1999)
-
Volume 34 (1998)
-
Volume 33 (1997)
-
Volume 32 (1996)
-
Volume 31 (1995)
-
Volume 30 (1994)
-
Volume 29 (1993)
-
Volume 28 (1992)
-
Volume 27 (1991)
-
Volume 26 (1990)
-
Volume 25 (1989)
-
Volume 24 (1988)
-
Volume 23 (1987)
-
Volume 22 (1986)
-
Volume 21 (1985)
-
Volume 20 (1984)
-
Volume 19 (1983)
-
Volume 18 (1982)
-
Volume 17 (1981)
-
Volume 16 (1980)
-
Volume 15 (1979)
-
Volume 14 (1978)
-
Volume 13 (1977)
-
Volume 12 (1976)
-
Volume 11 (1975)
-
Volume 10 (1974)
-
Volume 9 (1973)
-
Volume 8 (1972)
-
Volume 7 (1971)
-
Volume 6 (1970)
-
Volume 5 (1969)
-
Volume 4 (1968)
-
Volume 3 (1967)
-
Volume 2 (1966)
-
Volume 1 (1965)
Volume 11, Issue 9
1 May 1975
Popcorn noise and generation-recombination noise observed in ion-implanted silicon resistors
- Author(s): T. Koji
- Source: Electronics Letters, Volume 11, Issue 9, p. 185 –186
- DOI: 10.1049/el:19750141
- Type: Article
- + Show details - Hide details
-
p.
185
–186
(2)
Experimental results show that, for low currents, the generation-recombination noise component increases with current, and, at higher currents, it decreases inversely with current. For currents greater than a certain value, a generation-recombination noise component is scarcely observed.
Aggregation matrices for a class of low-order models for large-scale systems
- Author(s): J. Hickin and N.K. Sinha
- Source: Electronics Letters, Volume 11, Issue 9, page: 186 –186
- DOI: 10.1049/el:19750142
- Type: Article
- + Show details - Hide details
-
p.
186
(1)
A simple technique for aggregation is established for model reduction by projection. This leads to a direct formula for deriving the aggregation matrix. It is shown that aggregation is a generalisation of projection, and the work of Aoki is related to that of Mitra, Davison and Chidambara.
Microwave modelling of h.f. Yagi antennas over real ground
- Author(s): P.S. Hall ; B. Chambers ; P.A. McInnes
- Source: Electronics Letters, Volume 11, Issue 9, p. 187 –188
- DOI: 10.1049/el:19750143
- Type: Article
- + Show details - Hide details
-
p.
187
–188
(2)
Yagi antennas operating at 25 MHz over real ground have been modelled at microwave frequencies. The method of modelling ground, the measurement of its electrical parameters and the apparatus for measuring radiation patterns of model antennas are described. Typical radiation patterns obtained are compared with those predicted from theory.
Stochastic and fuzzy logics
- Author(s): B.R. Gaines
- Source: Electronics Letters, Volume 11, Issue 9, p. 188 –189
- DOI: 10.1049/el:19750144
- Type: Article
- + Show details - Hide details
-
p.
188
–189
(2)
It is shown that it is possible to regard stochastic and fuzzy logics as being derived from two different constraints on a probability logic: statistical independence (stochastic) and logical implication (fuzzy). To contrast the merits of the two logics, some published data on a fuzzy-logic controller is reanalysed using stochastic logic and it is shown that no significant difference results in the control policy.
Ion-implanted n+ contacts for Ka band GaAs Gunn-effect diodes
- Author(s): D.H. Lee ; J.J. Berenz ; R.L. Bernick
- Source: Electronics Letters, Volume 11, Issue 9, p. 189 –191
- DOI: 10.1049/el:19750145
- Type: Article
- + Show details - Hide details
-
p.
189
–191
(3)
Shallow (<1 μm) n-type doping profiles with peak carrier concentrations of ≃ 8 × 1017 cm−3 have been formed by sulphur-ion implantation into vapour-phase GaAs epitaxial layers for improved Gunn-effect-diode contacts. Continuous wave output powers in excess of 250 mW were measured at 35 GHz, with the implanted n+ profile biased either as an electron cathode or anode contact.
Impulse response of a self-focusing optical fibre
- Author(s): S. Nemoto and G.L. Yip
- Source: Electronics Letters, Volume 11, Issue 9, p. 191 –192
- DOI: 10.1049/el:19750146
- Type: Article
- + Show details - Hide details
-
p.
191
–192
(2)
Analytical expressions are derived for the impulse response of a self-focusing optical fibre with a core whose index profile is described by the 2nd- and the 4th-order terms of the radial distance. It is shown that the shape and the r.m.s. width of the impulse response depend strongly on the 4th-order coefficient of the index distribution.
Comment on ‘Linear-system reduction by continued-fraction expansion about a general point’
- Author(s): R. Parthasarathy and H. Singh
- Source: Electronics Letters, Volume 11, Issue 9, page: 193 –193
- DOI: 10.1049/el:19750147
- Type: Article
- + Show details - Hide details
-
p.
193
(1)
Correlation of long sequences by a surface-acoustic-wave convolver, with application to spread-spectrum communication
- Author(s): D.P. Morgan and J.M. Hannah
- Source: Electronics Letters, Volume 11, Issue 9, p. 193 –195
- DOI: 10.1049/el:19750148
- Type: Article
- + Show details - Hide details
-
p.
193
–195
(3)
Segments of a long biphase coded waveform were correlated in a surface-acoustic-wave convolver, and the resulting correlation peaks were summed in a recirculation loop. With a 5 MHz chip rate, 250 μs of the waveform was integrated, giving an experimental s.n.r. improvement of 36 dB. The application to fast synchronisation in spread-spectrum communication is discussed.
Wideband GaAs Gunn reflection amplification for the 18–26.5 GHz waveguide band
- Author(s): J.G. de Koning ; R.E. Goldwasser ; R.J. Hamilton ; F.E. Rosztoczy
- Source: Electronics Letters, Volume 11, Issue 9, p. 195 –196
- DOI: 10.1049/el:19750149
- Type: Article
- + Show details - Hide details
-
p.
195
–196
(2)
The letter describes the design and performance of single-stage coaxial and microstrip reflection-amplifier modules for the 18–26.5 GHz waveguide band. The microstrip amplifier exhibited a small-signal gain of 8±2 dB from 18.5 to 25.3 GHz
GaAs double-drift avalanche diode from vapour-phase epitaxy
- Author(s): W. Tantraporn and S.P. Yu
- Source: Electronics Letters, Volume 11, Issue 9, p. 196 –198
- DOI: 10.1049/el:19750150
- Type: Article
- + Show details - Hide details
-
p.
196
–198
(3)
p-type doping of GaAs grown by a vapour-epitaxy technique is accomplished in the range of 1015 cm−3 using a Zn source in a controlled-temperature zone, n-type doping is accomplished by admitting a controlled admixture of SnCl4 and AsCl3 into the system. Diodes were fabricated from a p–n–n+ substrate wafer and operated in an I–C TRAPATT mode in a compact circuit. TRAPATT action yields a spiky current waveform useful as a pulse generator.
Application of capacitance minimisation to lowpass active RC structures
- Author(s): J. Dunning-Davies and F.W. Stephenson
- Source: Electronics Letters, Volume 11, Issue 9, p. 198 –199
- DOI: 10.1049/el:19750151
- Type: Article
- + Show details - Hide details
-
p.
198
–199
(2)
Design formulas are presented for the realisation of RC active networks having minimum capacitance. The results are applied to the design of lowpass Butterworth 3rd- and 4th- order systems.
Integrated GaAs f.e.t. mixer performance at X band
- Author(s): R.A. Pucel ; D. Masse ; R. Bera
- Source: Electronics Letters, Volume 11, Issue 9, p. 199 –200
- DOI: 10.1049/el:19750152
- Type: Article
- + Show details - Hide details
-
p.
199
–200
(2)
Experiments were performed at X band with GaAs f.e.t.s used as mixer elements. These studies show that an f.e.t. mixer may exhibit a conversion gain approaching that of the corresponding amplifier. Conversion gains as high as 6 dB were measured. Low noise and high signal-handling capabilities were also demonstrated.
Most viewed content for this Journal
Article
content/journals/el
Journal
5
Most cited content for this Journal
-
Extreme multistability in a memristive circuit
- Author(s): Bo-Cheng Bao ; Quan Xu ; Han Bao ; Mo Chen
- Type: Article
-
Absorptive frequency selective surface using parallel LC resonance
- Author(s): Qiang Chen ; Liguo Liu ; Liang Chen ; Jiajun Bai ; Yunqi Fu
- Type: Article
-
Partial spectral search-based DOA estimation method for co-prime linear arrays
- Author(s): Fenggang Sun ; Peng Lan ; Bin Gao
- Type: Article
-
Experimental verification of on-chip CMOS fractional-order capacitor emulators
- Author(s): G. Tsirimokou ; C. Psychalinos ; A.S. Elwakil ; K.N. Salama
- Type: Article
-
54 Gbit/s OOK transmission using single-mode VCSEL up to 2.2 km MMF
- Author(s): G. Stepniak ; A. Lewandowski ; J.R. Kropp ; N.N. Ledentsov ; V.A. Shchukin ; N. Ledentsov Jr. ; G. Schaefer ; M. Agustin ; J.P. Turkiewicz
- Type: Article
