Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 11, Issue 14, 10 July 1975
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Volume 11, Issue 14
10 July 1975
Comparison of numerical-solution methods for 2-dimensional bipolar-transistor-analysis algorithm
- Author(s): C.R. Jesshope ; E.J. Zaluska ; H.A. Kemhadjian
- Source: Electronics Letters, Volume 11, Issue 14, p. 285 –286
- DOI: 10.1049/el:19750216
- Type: Article
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–286
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Numerical methods of solution to linear equations are dicussed with reference to a bipolar-transistor model. Results are presented that show the advantages of using a strongly implicit procedure (s.i.p.). A new technique for applying iteration parametrers to s.i.p. is proposed. This method is compared with both direct and other iterative methods.
Majority-carrier traps in n- and p-type epitaxial GaAs
- Author(s): F. Hasegawa and A. Majerfeld
- Source: Electronics Letters, Volume 11, Issue 14, p. 286 –288
- DOI: 10.1049/el:19750217
- Type: Article
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–288
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Majority-carrier traps are characterised for n- and p-type GaAs. Bulk and vapour-phase-epitaxial n GaAs show the same electron-trap centre (0.83 eV). No electron traps were detected in liquid-phase epitaxial n GaAs, but three hole trap centres (0.64, 0.44 and ∼ 0.6 eV) were found in p GaAs. The capture cross-section and density of these centres have also been determined.
Laser-probe analysis of field distributions within acoustic-surface-wave planar resonators
- Author(s): I.M. Mason ; J. Chambers ; P.E. Lagasse
- Source: Electronics Letters, Volume 11, Issue 14, p. 288 –290
- DOI: 10.1049/el:19750218
- Type: Article
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Transverse boundary conditions can exert a marked influence on internal field configurations within an acoustic-surface-wave planar resonator. Laser-probe plots of field distributions within two ostensibly similar piezoshorting resonators are reported. The results provide some insight into the eigenmode spectrum of both the resonator and the multistrip coupler. It is proposed that planar resonator drive transducer apodisation may be used to reduce overmoding.
Zener-diode noise generators
- Author(s): P.I. Somlo
- Source: Electronics Letters, Volume 11, Issue 14, page: 290 –290
- DOI: 10.1049/el:19750219
- Type: Article
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Zener diodes operated in the breakdown region have been investigated as transfer noise standards in the r.f. region. A close correlation has been found between the variation in excess noise ratio (e.n.r., dB) and the temperature coefficient of Zener diodes. In particular, diodes having zero temperature coefficient of voltage also have zero temperature coefficient of e.n.r.
Spurious oscillations in IMPATT oscillators
- Author(s): G.S. Hobson and R.C. Tozer
- Source: Electronics Letters, Volume 11, Issue 14, page: 291 –291
- DOI: 10.1049/el:19750220
- Type: Article
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Incorrect circuit design of cavity-controlled IMPATT oscillators may cause low-frequency instabilities and frequency jumping, which are simply avoidable. A simple technique for identifying the avalanche resonance frequency of packaged IMPATT oscillators is also described.
Radiation from a parallel-plate waveguide with a finite corrugated flange
- Author(s): G.A. Hockham and L.M. Seng
- Source: Electronics Letters, Volume 11, Issue 14, p. 292 –293
- DOI: 10.1049/el:19750221
- Type: Article
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Wide-angle corrugated horns have found important practical application as feeds for reflector antennas, but as yet no satisfactory design theory exists. This letter presents results obtained using the method of moments for a 2-dimensional structure, whereby agreement between theory and experiment has been found to be excellent. This technique has the virtue that it can be readily applied to the more useful cylindrical geometry.
Gunn-diode oscillator at 95 GHz
- Author(s): T.G. Ruttan
- Source: Electronics Letters, Volume 11, Issue 14, p. 293 –294
- DOI: 10.1049/el:19750222
- Type: Article
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The results of Gunn-diode-oscillator development at 90 to 94 GHz are reported, along with a discussion of the devices and circuit used. The best performance obtained was 25 mW output power (at 30°C heatsink temperature) with a d.c.-to-r.f. conversion efficiency of 0.6% at an operating frequency of 93.7 GHz.
Applications of the perturbation matrix in network design problems
- Author(s): M.I. Sobhy and A.S. Deif
- Source: Electronics Letters, Volume 11, Issue 14, p. 294 –296
- DOI: 10.1049/el:19750223
- Type: Article
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The concept of the perturbation matrix is used to develop a set of simultaneous equations relating the shifts in the eigen-values of the state matrix to variations in either the resistive or reactive elements. A powerful and versatile computer programs based on these equations has been developed and applied to a wide range of network design problems.
Some BCH codes are optimum
- Author(s): D.A. Bell and R. Laxton
- Source: Electronics Letters, Volume 11, Issue 14, p. 296 –297
- DOI: 10.1049/el:19750224
- Type: Article
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It is shown that some BCH codes are optimum.
Influence of the channel width on the threshold voltage modulation in m.o.s.f.e.t.s
- Author(s): K.O. Jeppson
- Source: Electronics Letters, Volume 11, Issue 14, p. 297 –299
- DOI: 10.1049/el:19750225
- Type: Article
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The threshold vollage of an m.o.s. field-effect transistor is modulated by the source-to-substrate reverse bias. In the letter, the theory for long- and short-channel transistors is extended to include the influence of the channel width. The result is an analytical expression for the threshold voltage as a function of geometry and bias that agrees well with experimental data.
M.I.C. TRAPATT oscillator for efficient S band operation
- Author(s): B.H. Newton
- Source: Electronics Letters, Volume 11, Issue 14, p. 299 –300
- DOI: 10.1049/el:19750226
- Type: Article
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The letter describes the construction and performance of a S band m.i.c. TRAPATT oscillator. The design utilises a system of sliding lumped-element sections to provide optimum performance from unencapsulated silicon p+–n–n+ chips. Efficiencies of greater than 30% at 2.6 GHz and peak output powers up to 40 W are reported. The oscillator is small and self contained and is suitable for ai borne transmitters.
Alumina microstrip GaAs f.e.t. 11 GHz oscillator
- Author(s): N.A. Slaymaker and J.A. Turner
- Source: Electronics Letters, Volume 11, Issue 14, p. 300 –301
- DOI: 10.1049/el:19750227
- Type: Article
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A small, lightweight 11 GHz f.e.t. oscillator has been developed. An output power of 10 mW with an efficiency of 10% was easily produced using a GaAs f.e.t. designed for small-signal amplifier applications. Its low power consumption makes it a suitable low-noise source for integrated-receiver applications.
Dependence of t.e.o. efficiency on NL product
- Author(s): K.T. Ip and L.F. Eastman
- Source: Electronics Letters, Volume 11, Issue 14, p. 301 –303
- DOI: 10.1049/el:19750228
- Type: Article
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As the NL product is increased, an increase in efficiency of t.e.o. devices is observed. This effect is theoretically explained in terms of the induced current caused by the moving space charge in the active layer. A limit on current peak/valley ratio for various NL product devices is presented.
Surface morphology of liquid-phase-epitaxial InP
- Author(s): S. Guha ; A. Majerfeld ; N. Moyes ; P.N. Robson
- Source: Electronics Letters, Volume 11, Issue 14, p. 303 –304
- DOI: 10.1049/el:19750229
- Type: Article
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It is shown that misorientation of a substrate from a lowest index plane even by 0.1° results in epitaxial layers having lamellar surface structure and indium inclusions. Smooth layers can be grown from a supercooled melt on nominally oriented (±1°) (111) B planes. For (100) substrates, exact orientation (±0.1°) and melt supercooling are necessary to grow smooth layers.
Wide-range temperature compensation by addition of two crystal-resonator frequencies: practical results with quartz and LiTaO3
- Author(s): J. Brunner
- Source: Electronics Letters, Volume 11, Issue 14, p. 304 –305
- DOI: 10.1049/el:19750230
- Type: Article
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Practical results are presented on a novel method for compensating the frequency drift of crystal oscillators. The digital summing of a 300 kHz quartz and a 200 kHz LiTaO3 crystal resonator results in a sum frequency whose temperature drift is 10 times smaller than the drift of quartz or LiTaO3.
Buffered stack memory organisation
- Author(s): V. Rajaraman and O. Vikas
- Source: Electronics Letters, Volume 11, Issue 14, p. 305 –307
- DOI: 10.1049/el:19750231
- Type: Article
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Slow unidirectional shift registers can be used to realise a large-size inexpensive stack. A simple configuration of such a shift-register stack will frequently force a processing unit needing access to it into an idle state. In the letter, a scheme using a small number of fast bidirectional shift registers appended to a unidirectional shift-register stack is suggested. This configuration makes the entire stack look, for most of the time, as if it were made of fast bidirectional shift registers. A design method is presented to determine the number of bits needed in the bidirectional shift register to meet given specifications.
Influence of mode coupling on the noise properties of multimode-fibre systems
- Author(s): G. Zeidler and D. Schicketanz
- Source: Electronics Letters, Volume 11, Issue 14, p. 307 –308
- DOI: 10.1049/el:19750232
- Type: Article
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Mode coupling can change the noise properties of optical-fibre links. Fluctuations of the input field distribution of laser diodes with filamentary emission patterns can be smoothed out by statistical mode mixing along the fibre line.
Direct coupling from a GaAs laser into a single-mode fibre
- Author(s): R.B. Dyott
- Source: Electronics Letters, Volume 11, Issue 14, p. 308 –309
- DOI: 10.1049/el:19750233
- Type: Article
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Ways of coupling directly to a monomode fibre by neutralising the end reflection from the laser and then using the face of the fibre core as a cavity mirror are proposed. The condition is derived for the optimum transfer of power from the laser resonator to the fibre transmission line.
Dispersion characteristic of a microstrip line with a step discontinuity
- Author(s): S. Akhtarzad and P.B. Johns
- Source: Electronics Letters, Volume 11, Issue 14, p. 310 –311
- DOI: 10.1049/el:19750234
- Type: Article
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The t.l.m. method of numerical analysis in three space dimensions and time has been successfully applied to microstrip problems. In the letter, a general discontinuity problem in the form of an abrupt change of width in a microstrip line is analysed and comparison is made with approximate data in the literature.
Efficient variable-metric method for obtaining estimates of the parameters of a dynamic model
- Author(s): S.L. Stott and L. James
- Source: Electronics Letters, Volume 11, Issue 14, p. 311 –312
- DOI: 10.1049/el:19750235
- Type: Article
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Presented in the letter is an efficient method of estimating the parameters of a dynamic model. This is based on a generalised least-squares formulation of the problem, coupled with the use of a variable-metric numerical optimisation routine.
Reply to ‘Comment on Improved describing function for hysteresis’
- Author(s): P. Atkinson and P.J. Thomas
- Source: Electronics Letters, Volume 11, Issue 14, page: 312 –312
- DOI: 10.1049/el:19750236
- Type: Article
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Erratum: Novel technique for the linearisation of charge-coupled devices
- Author(s): D.J. MacLennan and J. Mavor
- Source: Electronics Letters, Volume 11, Issue 14, page: 312 –312
- DOI: 10.1049/el:19750237
- Type: Article
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Erratum: Wideband GaAs Gunn reflection amplification for the 18–26.5 GHz waveguide band
- Author(s): J.G. de Konning ; R.E. Goldwasser ; R.J. Hamilton ; F.E. Rosztoczy
- Source: Electronics Letters, Volume 11, Issue 14, page: 312 –312
- DOI: 10.1049/el:19750238
- Type: Article
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Erratum: Band-elimination filter employing surface-acoustic-wave resonators
- Author(s): Y. Koyamada ; F. Ishihara ; S. Yoshikawa
- Source: Electronics Letters, Volume 11, Issue 14, page: 312 –312
- DOI: 10.1049/el:19750239
- Type: Article
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