Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 10, Issue 4, 21 February 1974
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Volume 10, Issue 4
21 February 1974
Propagation characteristics of radially inhomogeneous optical fibre
- Author(s): G.L. Yip and Y.H. Ahmew
- Source: Electronics Letters, Volume 10, Issue 4, p. 37 –38
- DOI: 10.1049/el:19740028
- Type: Article
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p.
37
–38
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A numerical method for computing the propagation characteristics of a radially inhomogeneous fibre is presented. The method is quite general and can be applied to a fibre with any refractive-index profile. The fibre considered here consists of a core with a parabolic refractive-index profile and a thin homogeneous cladding. Dispersion curves for the seven lowest-order modes are computed with and without the infinite-cladding approximation. The results have been found to agree with those of other investigators. The effect of the finite cladding, however, has not been studied previously.
Anomalous dispersion of new doubly clad optical fibre
- Author(s): S. Kawakami and S. Nishida
- Source: Electronics Letters, Volume 10, Issue 4, p. 38 –40
- DOI: 10.1049/el:19740029
- Type: Article
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p.
38
–40
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The letter treats a doubly clad dielectric optical fibre. We assume that the core refractive index is greater than the outer-cladding refractive index, which is greater than the inner-cladding refractive index. This optical fibre, if properly designed, has an anomalous or negative normalised guide dispersion (ω2/β)d2β/dω2 that compensates typical glass dispersion. Single-mode operation of this doubly clad fibre can be obtained with the core radius appreciably larger than that of a singly clad fibre with the same core and outer-cladding refractive indices.
Comparison of noise parameters of diffused and ion-implanted microwave transistors
- Author(s): S. Ludvik and P. Froess
- Source: Electronics Letters, Volume 10, Issue 4, p. 40 –41
- DOI: 10.1049/el:19740030
- Type: Article
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–41
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Two types of implanted microwave transistor structures are outlined, and their behaviour is compared with a totally diffused device. Minimum noise figures for the implanted transistors have been obtained in the range 3.6–4.5 dB at a frequency of 4 GHz.
Optical-waveguide connecting networks
- Author(s): H.F. Taylor
- Source: Electronics Letters, Volume 10, Issue 4, p. 41 –43
- DOI: 10.1049/el:19740031
- Type: Article
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A configuration for rearrangeable connecting networks based on binary electro-optic switches is proposed. An N×N network of this type requires N stages and N(N−1)/2 switches. Design considerations are discussed, and numerical estimates are given for the loss, crosstalk and length per stage.
Analysis of open structures by finite-element resolution of equivalent closed-boundary problem
- Author(s): M.C. Decreton
- Source: Electronics Letters, Volume 10, Issue 4, p. 43 –44
- DOI: 10.1049/el:19740032
- Type: Article
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Using a conformal transformation, a certain number of static open-boundary structures involving an infinite metal plate can be reduced to closed problems that are easily solved by a classical finite-element technique. The method is applied to a wire-above-ground problem and to a microstrip structure where the strip has nonzero thickness.
Explicit expressions for geometrical dimensions of symmetrical coupled striplines
- Author(s): L.J.P. Linnér
- Source: Electronics Letters, Volume 10, Issue 4, p. 45 –46
- DOI: 10.1049/el:19740033
- Type: Article
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It is shown how the inverse solution of certain wave-impedance problems can be found explicitly by using Jacobi's theta functions. It is possible to find directly the geometrical dimensions, given the transmission-line wave-impedance parameters. Inverse formulas for a shielded single stripline and coupled symmetrical striplines are presented. The numerical computations are simplified by the excellent convergence properties of Jacobi's theta functions.
Two-port dipolar switch
- Author(s): J. Helszajn
- Source: Electronics Letters, Volume 10, Issue 4, p. 46 –47
- DOI: 10.1049/el:19740034
- Type: Article
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The letter describes a simple 2-port reciprocal ferrite switch that relies on the rotation of the dipolar mode in a ferrite post or disc for its operation. The switch uses the fact that the electric field for this mode has a figure-of-eight pattern at the edge of the post or disc. In the unmagnetised state, this field pattern couples the inputn ad output ports of the transmission line. In the magnetised state, the two ports are decoupled, provided that the field is rotated through 90°, thereby placing a null of the figure-of-eight pattern at the input port. An experimental switch was constructed in stripline at 2 GHz, with an insertion loss of 1 dB and an attenuation of 28 dB.
Subnanosecond-transient detector using emitter-coupled logic gates
- Author(s): D.G. Whitehead
- Source: Electronics Letters, Volume 10, Issue 4, p. 47 –48
- DOI: 10.1049/el:19740035
- Type: Article
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It is shown that tunnel-diode circuits can be made directly compatible with emitter-coupled logic gates. This enables the design of subnanosecond threshold switching circuits with standard logic-gate output levels to be simply achieved. The switching speed of the tunnel diode under these circuit conditions can be calculated, and suitable graphs are given.
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