Online ISSN
1350-911X
Print ISSN
0013-5194
Electronics Letters
Volume 10, Issue 21, 17 October 1974
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Volume 10, Issue 21
17 October 1974
Integrated silicon anemometer
- Author(s): A.F.P. van Putten and S. Middelhoek
- Source: Electronics Letters, Volume 10, Issue 21, p. 425 –426
- DOI: 10.1049/el:19740339
- Type: Article
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p.
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–426
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At present, planar silicon technology allows one to construct very sophisticated integrated circuits for the processing of electronic signals. In the letter, an integrated silicon sensor for the measurement of gas flow is introduced.
Significance of leaky rays in liquid-filled optical fibres
- Author(s): W.S. Davies
- Source: Electronics Letters, Volume 10, Issue 21, p. 426 –427
- DOI: 10.1049/el:19740340
- Type: Article
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Estimates have been made of the attenuations of skew rays due to cladding loss in liquid-filled optical fibres, with a view to determining the significance of leaky rays. The results show that, although the least attenuated leaky rays suffer much less loss than the most attenuated trapped rays, their losses are still considerably more than those suffered by the majority of the trapped rays. As a consequence, the distances over which leaky-ray propagation is significant in liquid-filled fibres are shown to be much less than suggested by earlier reports, when only radiation losses were considered.
Role of radiation damage on the contact resistance of GaAs Schottky barriers
- Author(s): P.D. Taylor and D.V. Morgan
- Source: Electronics Letters, Volume 10, Issue 21, p. 428 –429
- DOI: 10.1049/el:19740341
- Type: Article
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–429
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The effects of radiation damage on the current/voltage characteristics of Ni-GaAs Schottky barriers are studied. Boron ions implanted into the semiconductor are shown to reduce the device contact resistance. The nature of the defect levels so introduced are studied by thermally stimulated current and capacitance measurements.
Charge storage due to u.v. irradiation in aluminium-oxide films
- Author(s): M.S.I. Rageh ; A.E. Guile ; D.V. Morgan
- Source: Electronics Letters, Volume 10, Issue 21, p. 429 –430
- DOI: 10.1049/el:19740342
- Type: Article
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–430
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Results are given that show that substantial storage of positive charges can occur in aluminium-oxide films above a certain thickness, leading to a surface-potential-difference change of up to at least 2 V. It has been established that these charges are mainly due to u.v. irradiation, and they have been observed on are cathodes.
Single-diode 0.5kW TRAPATT oscillator
- Author(s): C.O.G. Obah ; E. Benko ; T.A. Midford ; H.C. Bowers ; P.Y. Chao
- Source: Electronics Letters, Volume 10, Issue 21, p. 430 –431
- DOI: 10.1049/el:19740343
- Type: Article
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–431
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A lumped-element TRAPATT-diode oscillator capable of more than 0.5 kW output power from a single diode chip is described. Peak power of 575 W with 23% efficiency and a maximum efficiency of 28% at 0.5 kW output power have been consistently obtained at approximately 1 GHz.
Intermodulation in an f.m. oscillator injection locked by an f.m. signal
- Author(s): G. Endersz
- Source: Electronics Letters, Volume 10, Issue 21, p. 432 –433
- DOI: 10.1049/el:19740344
- Type: Article
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–433
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Analysis of injection locking by f.m. signals is presented when the locked oscillator and the locking source are frequency modulated by the same signal. Intermodulation noise and optimum deviation of the locked oscillator are derived, assuming f.m. by band-limited Gaussion noise. Previous published results and recent experiments confirm the results obtained.
Radiation signature of buried line radiators
- Author(s): A.P. Anderson and K.T. Phua
- Source: Electronics Letters, Volume 10, Issue 21, p. 433 –434
- DOI: 10.1049/el:19740345
- Type: Article
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A simple means of detecting the presence of a buried line radiator by its characteristic interference pattern above ground is proposed. The feasibility is demonstrated by measurements on a buried dipole oscillator at 1 GHz.
Efficiency enhancement in avalanche diodes by depletion-region-width modulation
- Author(s): P.A. Blakey ; B. Culshaw ; R.A. Giblin
- Source: Electronics Letters, Volume 10, Issue 21, p. 435 –436
- DOI: 10.1049/el:19740346
- Type: Article
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–436
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Gallium-arsenide avalanche-diode oscillators generally have direct operating voltages considerably lower than the punchtion in the depletion-region width during the r.f. cycle. This is in contrast to silicon devices, where it is ound that most structures are punched through—or very nearly so—at the operating voltage. In the letter, we consider the effect on the induced terminal current waveform of the time-varying depletion-region width. It is shown that, in diodes having a sufficiently under-punched-through structure and a high enough voltage modulation, the effect of this variation is to improve the current waveform and to increase the efficiency above that predicted by the Read sharp-pulse approximation. The theory has been found to give good agreement with published results for high-efficiency gallium-arsenide devices.
Product network as a traffic concentrator
- Author(s): J.P. Summer
- Source: Electronics Letters, Volume 10, Issue 21, p. 436 –438
- DOI: 10.1049/el:19740347
- Type: Article
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The traffic capacity of product networks based on the Cartesian product of complete graphs has previously been investigated in terms of final selection for 2nd-order products. Traffic concentration has not, however, been previously considered, and, as a first step, the letter considers concentration using single-link connections. A preferred method of connecting trunks to the network is also indicated.
Sum-cosine window
- Author(s): V. Umapathi Reddy and K.M. Muraleedhara Prabhu
- Source: Electronics Letters, Volume 10, Issue 21, p. 438 –439
- DOI: 10.1049/el:19740348
- Type: Article
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–439
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A simple window that yields 6 dB improvement in the first sidelobe gain, with almost no loss in the maximum sidclobe gain, compared with that of Kaiser's near optimum zeroth-order Bessel window, is developed. The main-lobe energy of Kaiser's window is about 0.00078% more than that of the new window. The distinct advantage of the window is its very simple form similar to that of a Hamming window.
Root-law circuit using monolithic bipolar-transistor arrays
- Author(s): R.W.J. Barker and B.L. Hart
- Source: Electronics Letters, Volume 10, Issue 21, p. 439 –440
- DOI: 10.1049/el:19740349
- Type: Article
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p.
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–440
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Close matching in the respective parameters of bipolar transistors fabricated on the same monolithic chip facilitates the design of a circuit characterised bywhere I0 is the output current, I1, ‥, Im are input currents and n (≥1) is an integral number. Experimental measurements for n=2, m=3 and 1 μA ≤ Ir ≤ 1 mA are presented and discussed in relation to a simple theoretical error formula.
Implementation of 3-valued logic with c.o.s.m.o.s. integrated circuits
- Author(s): H.T. Mouftah and I.B. Jordan
- Source: Electronics Letters, Volume 10, Issue 21, p. 441 –442
- DOI: 10.1049/el:19740350
- Type: Article
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–442
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Two ternary gates realising basic ternary operators (ternary NOR, NAND and invertors) are designed with c.o.s.m.o.s. integrated circuits. Any one of these gates may be used to implement several 3-valued algebras.
Parametric amplification of acoustic surface waves on CdS
- Author(s): G. Bastide ; G. Sagnes ; M. Rouzeyre
- Source: Electronics Letters, Volume 10, Issue 21, p. 442 –443
- DOI: 10.1049/el:19740351
- Type: Article
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We report some experimental results on the parametric interaction of codirected s.a.w. in photoconducting CdS. This interaction takes place through the 2nd-order electric field associated with the bunching of carriers. Below threshold conditions, we directly observed both parametric attenuation and amplification with a 30 dB dynamic range. At the highest electric level of the pump available on our apparatus, 16 dBm, the parametric gain is about 10 dB. Beyond the threshold conditions, we observed only a parametric attenuation.
Epitaxially grown double-drift silicon IMPATT diodes at 60 To 90 GHz
- Author(s): A.M. Howard ; D.J. Smith ; J.J. Purcell
- Source: Electronics Letters, Volume 10, Issue 21, p. 443 –445
- DOI: 10.1049/el:19740352
- Type: Article
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–445
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The characterisation of successively grown n- and p-type epitaxial layers suitable for double-drift 60-90 GHz oscillators is described. Microwave results are reported, and include 0.35 W with 9.2% efficiency at 70 GHz.
Computer program for s.p. partitions of sequential machines
- Author(s): A.E.A. Almaini and M.E. Woodward
- Source: Electronics Letters, Volume 10, Issue 21, p. 445 –446
- DOI: 10.1049/el:19740353
- Type: Article
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–446
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A digital-computer program written in FORTRAN 1900 is developed for the generation of all closed partitions for sequential machines with completely specified tables.
Poynting's vector and the wavefronts near a plane conductor
- Author(s): E.-G. Neumann and H.D. Rudolph
- Source: Electronics Letters, Volume 10, Issue 21, p. 446 –447
- DOI: 10.1049/el:19740354
- Type: Article
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–447
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An equation is derived for the time average of Poynting's vector near a plane conductor, which shows that the intensity vector is approximately normal to the wavefronts if one only excludes those regions for which the electric field changes very rapidly in the direction normal to the plane conductor.
Insensitive very-low-frequency RC oscillator
- Author(s): G. Wilson
- Source: Electronics Letters, Volume 10, Issue 21, p. 447 –448
- DOI: 10.1049/el:19740355
- Type: Article
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–448
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The frequency-sensitivity problem associated with some types of very-low-frequency oscillators is examined and an insensitive structure is presented.
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