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Domain tip memories

Domain tip memories

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Recent domain tip efforts, mainly the DOT memory of CMI and BASF and the MOD memory of TECSI and Crouzet have been directed toward lowering the cost per bit through an increase in the bit density on the substrate and more efficient manufacturing processes. Domain tip memory technology takes advantage of the low cost per bit of the basic magnetic film deposited on a glass substrate despite the lower density as compared to the cost of semiconductors or bubble memory processed substrates.The paper reports mainly on the recent design of MOD which allows unilateral propagation of domains with one level of conductors. Several prototypes in DOT as well as in MOD technologies have been constructed and operated, some of them of a capacity larger than 2 megabits, showing overall error rates better than 10−9 without correction.

References

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      • K.D. Broadbent . A thin magnetic film shift register. IRE Trans. on Electronic Computers , 3 , 321 - 323
    2. 2)
      • R.J. Spain . Controlled domain tip propagation. J. Appl. Phys. , 7 , 2572 - 2583
    3. 3)
      • A.H. Bobeck . Properties and device applications of magnetic domains in orthoferrites. Bell Syst. Tech. J. , 8 , 1901 - 1925
    4. 4)
      • R. Spain , M. Marino . Magnetic film domain wall motion devices. IEEE Trans. on Magnetics , 3 , 451 - 463
    5. 5)
      • Spain, R.J., Jauvtis, H.: `Dot memory technology', 1974, INTERMAG.
    6. 6)
      • C. Battarel . (1973) , MOD: a new generation of domain propagation memories with a high performance/cost ratio.
    7. 7)
      • (1976) Inter-Electronique.
    8. 8)
      • Henkler, H.: `BASF', , private communication.
    9. 9)
      • A.H. Bobeck , Della E. Torre . Magnetic bubbles, Selected Topics in Solid State Physics.
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