Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

The organization of some solid-state stores

The organization of some solid-state stores

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Radio and Electronic Engineer — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

A basic solid-state storage array is proposed which is capable of fast read- and write-times. special cases of this array are developed, one of which is analogous to a disk store and the other to a toroid on which the data paths can be either circular or helical. this represents a new concept: that of a cellular array without boundary cells. the characteristics of these stores and those of other conventional forms of storage are compared.

References

    1. 1)
      • Calvert, P.P.A., Gibson, A.T., Trunley, L.E.: `The next generation — 250 nanosecond computer main memories', 55, Proc.conf. computer science and technology, 1969, Manchester, I.e.e. conference publication, p. 72–77.
    2. 2)
      • E.S. Eilley , J.B. Hughes , N.D. Richards . Design for an 800 000 bit, 150 nanosecond magnetic thin film store. Microelectronics Quart. J. , 124 - 129
    3. 3)
      • B.L. Hanlon . Design considerations for a high performance 1-1 megabit semiconductor mainframe memory. Microelectronics Quart. J. , 47 - 51
    4. 4)
      • T.J. Lund . Semiconductor memory design. Microelectronics Quart. J. , 42 - 46
    5. 5)
      • P. English . Digital applications of m.o.s. integrated circuits. Marconi review , 171 - 188
    6. 6)
      • J. Linford . Mos memories for digital systems. Semiconductors , 39 - 44
    7. 7)
      • JF Young . Possibilities of a sinusoidal memory for an extendable cybernetic machine. The Radio and Electronic Engineer , 9 - 15
    8. 8)
      • S.G.T. Maine . Will m.o.s. stimulate a new computer generation?. Electronic engineering , 27 - 30
    9. 9)
      • R.E. Oakley . MNOS — a new non-volatile store. Component technology , 17 - 21
    10. 10)
      • R.C. Mostyn . The use of m.o.s. transistors in computer circuits. Marconi review , 189 - 205
    11. 11)
      • K.J. Dean . Design for a full multiplier. Proc. I.E.E. , 1592 - 1594
    12. 12)
      • G.G. Scarrott . Optical storage. The Radio and Electronic Engineer , 89 - 95
    13. 13)
      • W. Renwick . Memories for the next generation of computers. Electronics and Power , 13 - 16
    14. 14)
      • W.H. Kautz . Cellular logic-in-memory. I.E.E.E. trans. on computers , 719 - 727
    15. 15)
      • K.J. Dean . Cellular arrays for binary division. Proc. I.E.E. , 917 - 920
    16. 16)
      • L. Cohen , R. Green , K. Smith , J.L. Seely . Single transistor cell makes room for more memory on an m.o.s.chip. Electronics , 69 - 75
    17. 17)
      • Clegg, W.W., Pickard, R.M.: `Laminated thin magnetic film memory elements', 55, Proc. conf. computer science and technology, 1969, Manchester, I.E.E. conference publication, p. 94–102.
    18. 18)
      • P.A. Walker . Faster computer stores are now economically viable. Electronic engineering , 32 - 33
http://iet.metastore.ingenta.com/content/journals/10.1049/ree.1972.0061
Loading

Related content

content/journals/10.1049/ree.1972.0061
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
This is a required field
Please enter a valid email address