Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Ion implantation in semiconductor device technology

Ion implantation in semiconductor device technology

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Radio and Electronic Engineer — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© The Institution of Electronic and Radio Engineers
Published

The role of ion implantation in the fabrication of semiconductor devices is reviewed with special reference to silicon planar technology. The applications of ion implantation to various devices is discussed in detail. A summary is given of the present state of the art in the compound semiconductor field.

Inspec keywords: silicon; elemental semiconductors; ion implantation; semiconductor materials

Other keywords: semiconductor devices; ion implantation; silicon planar technology

Subjects: Semiconductor doping; Electrical properties of interfaces; Semiconductor technology; Doping and implantation of impurities; Semiconductor devices

References

    1. 1)
      • A.G. Foyt , J.P. Donnelly , W.T. Lindley . Efficient doping of GaAs by Se+ ion implantation. Appl. Phys. Lett. , 372 - 374
    2. 2)
      • T.E. Seidel , R.E. Davis , D.E. Iglesias . Double-driftregion ion implanted millimeter wave impatt diodes. Proc. I.E.E.E. , 8
    3. 3)
      • E. Laegsgaard , F.W. Martin , W.M. Gibsen . Position sensitive detectors made by ion implantation in silicon. Nuclear Insts & Methods , 1 , 24 - 26
    4. 4)
      • R.G. Hunsperger , O.J. Marsh . Electrical properties of Cd, Zn and S ion-implanted layers in GaAs. Radiation Effects , 3 , 263 - 268
    5. 5)
      • W.T. Lindley , R.J. Phelan , C.M. Wolfe , A.G. Foyt . GaAs Schottky barrier avalanche photodiodes. Appl. Phys. Lett. , 6 , 197 - 199
    6. 6)
      • MacRae, A.U.: `Recent advances in ion implanted junction device technology', Proc. 2nd Int. Conf. Ion Implantation, 1971, Garmisch , Springer-Verlag, , p. 329–334.
    7. 7)
      • Shockley, W.: `Forming semiconductive devices by ionic bombardment', 2,787,564, 28 October 1954, U.S. Patent.
    8. 8)
      • Stephen, J., Smith, B.J., Hinder, G., Marshall, D.C., Wittam, E.M.: `Some observations on high energy nitrogen implantations in silicon', Proc. 2nd Int. Conf. Ion Implantation, 1971, Garmisch , Springer-Verlag, , p. 489–494.
    9. 9)
      • K. Pickar , J.V. Dalton , H.D. Seidel , J.R. Matthews . Electrical properties of silicon diode array camera targets made by boron ion implantation. Appl. Phys. Lett. , 2
    10. 10)
      • J. Lindhard , M. Scharff , H.E. Schiøtt . Range concepts and heavy ion ranges, (Notes on atomic collisions II). Kgl. Danske Vidensk. Selsk. Mat. Fys. Medd. , 14 , 1 - 39
    11. 11)
      • H.G. Dill , R.W. Bower , T.M. Toombs . Ion-implanted mos technology. Radiation Effects , 1 , 45 - 58
    12. 12)
      • J. Stephen , J.A. Grimshaw . The electrical behaviour of abrupt ion implanted and diffused p+-n junctions. Radiation Effects , 1 , 73 - 86
    13. 13)
      • T. Ikeda , T. Tokuyama , T. Tsuchimuto . (1969) Silicon n-p-n structures by ion implantation, Electrochemical Society Fall Meeting.
    14. 14)
      • Dunlap, H.L., Hunsperger, R.G., Marsh, O.J.: `Development of ion implantation techniques for microelectronics', N70-17314, NASA Report, October 1969.
    15. 15)
      • Bower, R.W., Dill, H.G.: `Insulated gate field effect transistors fabricated using the gate as source-drain mask', Paper presented at Int. Electron Devices Washington Meeting, 28 October 1966.
    16. 16)
      • J.D. MacDougall , K.E. Manchester , P.E. Roughan . High value implanted resistors for microcircuits. Proc.I.E.E.E. , 9 , 1538 - 1542
    17. 17)
      • McNally, P.J., King, W.J.: `Ion implanted mosaic infrared detectors', 16th National Infrared Information Symposium, May 1968, Fort Monmouth, Paper presented at.
    18. 18)
      • J.M. Shannon , R.A. Ford , G.A. Gard . Annealing characteristics of highly doped ion implanted phosphorus layers in silicon. Radiation Effects , 3 , 217 - 223
    19. 19)
      • S. Kalbitzer , R. Bader , H. Herzer , K. Bethge . The fabrication of high quality silicon junction detectors by low energy ion implantation. Z.f. Physik , 117 - 118
    20. 20)
      • Maloney, C. P. C., Private communication (Smiths Industries Ltd.), 1971..
    21. 21)
      • G. Dearnaley . Ion bombardment and implantation. Reports on Progress in Physics , 4 , 405 - 491
    22. 22)
      • Blamires, N. G., Private communication, 1970..
    23. 23)
      • Bower, R.W.: `Method of irradiating dielectric-coated semiconductor bodies with low energy electrons', 3,507,709, 1970, U.S. Patent.
    24. 24)
      • P.J. McNally . Ion implantation in InAs and InSb. Radiation Effects , 2 , 149 - 153
    25. 25)
      • Allen, R.M.: `Implantation of compound semiconductors', Proc. European Conf. Ion Implantation, 1970, Peter Peregrinus Ltd., , p. 127–134.
    26. 26)
      • G. Dearnaley , A.G. Hardacre , B.D. Rogers . Ion implanted germanium particle detectors. Nuclear Insts & Methods , 86 - 92
    27. 27)
      • Nicholas, K.H., Ford, R.A.: `New techniques for improving high value ion implanted resistors', Proc. 2nd Int. Conf. Ion Implantation, 1971, Garmisch , Springer-Verlag, , p. 357–361.
    28. 28)
      • V.M. Zelevinskaya , G.A. Kachurin , N.B. Pridachin , L.S. Smirnov . Low resistivity layers produced by ion bombardment in semi-insulating gallium-arsenide. Soviet Physics—Semiconductors , 2 , 258 - 260
    29. 29)
      • D.A. Hodges , M.P. Lepselter , R.W. MacDonald , A.U. MacRae , H.A. Waggener . Low power bipolar transistor memory cells. I.E.E.E. J. Solid State Circuits , 5 , 280 - 284
    30. 30)
      • M.P. Lepselter , A.U. MacRae , R.W. MacDonald . SB-IGFET. II, an ion implanted igfet using Schottky barriers. Proc. I.E.E.E. , 5 , 812 - 813
    31. 31)
      • Burt, D.: `The design and characterization of high frequency m.o.s. transistor utilising ion-implantation techniques', Proc. Int. Conf. Properties and Use of M.I.S. Structures, 1969, Grenoble, p. 605–607.
    32. 32)
      • Hunsperger, R.G., Dunlap, H.L., Marsh, O.J.: `Development of ion implantation techniques for microelectronics', N69-24439, NASA Report, October 1968.
    33. 33)
      • Kellett, C.M., King, W.J., Leith, F.A.: `High energy implantation of materials', AD635267, Scientific Report, May 1966, No. 1 (Ion Physics Corp.).
    34. 34)
      • Roughan, P.E., MacDougall, J.D., Clark, A.H., Manchester, K.E., Anderson, F.W.: `Introduction of diffusion sources by ion implantation', Electrochemical Society, Boston Meeting, May 1968, Paper presented to.
    35. 35)
      • T. Abe , K. Sato , M. Konaka , A. Miyazaki . (1969) Impurity diffusion into silicon using Ge-doped SiO, Electrochem. Soc. Fall Meeting.
    36. 36)
      • A.G. Foyt , W.T. Lindley , C.M. Wolfe , J.P. Donnelly . Isolation of junction devices in GaAs using proton bombardment. Solid State Electronics , 14 , 209 - 214
    37. 37)
      • P. Brook , C.S. Whitehead . Hyperabrupt junctions in Au-Si Schottky diodes by ion implantation. Electronics Letters , 16 , 335 - 337
    38. 38)
      • Burt, D., Private communication (Hirst Research Centre, G.E.C.), 1971..
    39. 39)
      • R.S. Ying , R.G. Mankarious , D.L. English , R.W. Bower , L.E. Coerver . Characteristics of ion implanted impatt oscillators. I.E.E.E. J. Solid State Circuits , 3 , 225 - 231
    40. 40)
      • Josephy, R.,Private communication (Hirst Research Centre, G.E.C.), 1970..
    41. 41)
      • J.D. MacDougall , K.E. Manchester . (1969) Implanted components in microcircuits, National Electronics Conference.
    42. 42)
      • Morgan, R. and Greenhalgh, K. R., ‘Ion implantation—a bibliography’. A.E.R.E. Harwell Bibliography, Bib. 176, 1972..
    43. 43)
      • J.W. Mayer , O.J. Marsh , R. Mankarious , R. Bower . Zn and Te implantations into GaAs. J. Appl. Phys. , 1975 - 1976
    44. 44)
      • K. Rosendal . Ion implanted planar resistors. Radiation Effects , 1 , 95 - 100
    45. 45)
      • J.D. MacDougall , K. Manchester , P.B. Palmer . Ion implantation offers a bagful of benefits for mos. Electronics , 13 , 86 - 90
    46. 46)
      • Leith, F.A., King, W.J., McNally, P.: `High energy ion implantation of materials', AD651313, Final Report, January 1967, Ion Physics Corp..
    47. 47)
      • J.D. Sansbury , J.F. Gibbons . Conductivity and Hall mobility of ion-implanted silicon in semi-insulating gallium arsenide. Appl. Phys. Lett. , 10 , 311 - 312
    48. 48)
      • K.H. Nicholas , B.J. Goldsmith , J.H. Freeman , G.A. Gard , J. Stephen , B.J. Smith . The evaluation of the Harwell-Lintott industrial ion implantation machine by making silicon planar resistors. J. Phys., E , 309 - 310
    49. 49)
      • Howes, J.H., Knill, G.: `The characteristics of large area ion implanted p-n junctions for nuclear radiation detectors', Proc. European Conf. Ion Implantation, 1970, Peter Peregrinus Ltd., , p. 97–101.
    50. 50)
      • S. Kalbitzer , R. Bader , W. Melzer , W. Stumpfi . An X–Y position sensitive detector. Nuclear Insts & Methods , 323 - 324
    51. 51)
      • P. Glotin , J. Bernard , A. Monfret . Implications of ion implantation technology on ion implanted active devices in silicon. Radiation Effects , 1 , 65 - 72
    52. 52)
      • K. Picker , J.V. Dalton . Lifetime effects in ion implanted silicon. Radiation Effects , 1 , 89 - 94
    53. 53)
      • Kerr, J.A., Large, L.N.: `Semiconductor devices made by ion implantation', Proc. Int. Conf. on Applications of Ion Beams to Semiconductor Technology, 1967, Grenoble, p. 601–618.
    54. 54)
      • Freeman, J.H.: `Implantation machines', Proc. European Conf. Ion Implantation, 1970, Peter Peregrinus Ltd., , p. 1–18.
    55. 55)
      • Ph. Sebillotte , P. Siffert , A. Coche . Characteristics and window thickness of ion implanted semiconductor detectors. I.E.E.E. Trans. Nuclear Science , 1 , 24 - 32
    56. 56)
      • Smith, B. J., ‘Projected ion range data for silicon planar technology’, AERE R6660, 1971, A.E.R.E. Harwell..
    57. 57)
      • A.G. Foyt , W.T. Lindley , J.P. Donnelly . n-p junction photodetectors in InSb fabricated by proton bombardment. Appl. Phys. Lett. , 335 - 337
    58. 58)
      • J.M. Shannon , J. Stephen , J.H. Freeman . MOS frequency soars with ion-implanted layers. Electronics , 3 , 96 - 100
    59. 59)
      • Beale, J.R.A.: `Applications to semiconductor devices', Proc. European Conf. Ion Implantation, 1970, Peter Peregrinus Ltd., , p. 81–87.
    60. 60)
      • R.W. Bower . (1969) Applications of ion implantation doping to the planar m.o.s. integrated circuit technology, NEREM Record.
    61. 61)
      • J.P. Donnelly , A.G. Foyt , E.D. Hinkley , W.T. Lindley , J.O. Dimmock . Type conversion and p-n junctions in n-CdTe produced by ion implantation. Appl. Phys. Lett. , 9 , 303 - 305
    62. 62)
      • Dill, H.G., Toombs, T.N., Bauer, L.O.: `Recent advances in ion implanted m.o.s. technology', Proc. 2nd Int. Conf. Ion Implantation, 1971, Garmisch , Springer-Verlag, , p. 315–328.
    63. 63)
      • N.G. Blamires , M.D. Matthews , R.S. Nelson . Improved profiles of electrical activity in boron implanted silicon. Physics Letters , 3
    64. 64)
      • J.B. Schroeder , H.D. Dieselman . Implantation of zinc into gallium arsenide. Proc. I.E.E.E.
    65. 65)
      • Shannon, J.M., Ford, R.A.: `Properties of implanted layers and oxides used for mos integrated circuits', Paper J.1,1st Ion Implantation Conference, Thousand Oaks, Private communication.
    66. 66)
      • B.L. Crowder , R.S. Title . The distribution of damage produced by ion implantation of silicon at room temperature. Radiation Effects , 1 , 63 - 76
    67. 67)
      • A.U. MacRae . Device fabrication by ion implantation. Radiation Effects , 1 , 59 - 64
    68. 68)
      • Shifrin, G.A., Jamba, D.M., Jones, W.R., Marsh, O.J., Wauk, M.T., Wilson, R.G.: `Selective doping of piezoelectric crystals by ion implantation', AD702778, Technical Report, December 1969, No. 2.
    69. 69)
      • J.T. Burrill , W.J. King , S. Harrison , P. McNally . Ion implantation as a production technique. I.E.E.E. Trans. Electron Devices , 1 , 10 - 17
    70. 70)
      • Freeman, J.H., Caldecourt, L.R., Done, K.C.W., Francis, R.J.: `An industrial scale ion implantation facility', Proc. European Conf. Ion Implantation, Peter Peregrinus Ltd., , p. 36–40.
    71. 71)
      • E.D. Wolf , L.O. Bauer , R.W. Bower , H.L. Garvin , C.R. Buckley . Electron beam and ion beam fabricated microwave switch. I.E.E.E. Trans. Electron Devices , 6
    72. 72)
      • D.E. Davies , S.A. Roosild . Minority carrier lifetime in ion implanted and annealed silicon. Appl. Phys. Lett. , 107 - 109
    73. 73)
      • Fujinuma, K., Sakamoto, T., Abe, T., Sato, K., Ohmura, Y.: `Silicon microwave transistor made by new techniques', Proc. 1st Conference on Solid State Devices, 1969, Tokyo, Supplement to J. Jap. Soc. Appl. Phys., 39, pp. 71–7, 1970..
    74. 74)
      • Nishimatsu, S., Natsuaki, N., Warabisako, T., Tokuyama, T.: `Ion implanted mosfet', Proc. 2nd Conf. on Solid State Devices, 1970, Tokyo, Supplement to J. Jap. Soc. Appl. Phys., 40, pp. 29–35, 1971.
    75. 75)
      • D.E. Davies . Post annealing conductive behaviour of implanted layers in silicon. Appl. Phys. Lett.
    76. 76)
      • Aubuchon, K.G.: `The use of ion implantation to set the threshold voltage of m.o.s. transistors', Properties and Use of M.I.S. Structure, 1969, Grenoble, p. 575–590.
    77. 77)
      • R.W. Bower , H.G. Dill , K.G. Aubuchon , S.A. Thompson . M.i.s. field effect transistors formed by gate masked ion implantations. I.E.E.E. Trans. Electron Devices , 10 , 757 - 761
    78. 78)
      • K.G. Hunsperger , O. Marsh . Anneal behaviour of defects in ion-implanted GaAs diodes. Metallurgical Trans.
    79. 79)
      • Shifrin, G.A., Zanio, K.R., Jamba, D.M., Jones, W.R., Marsh, O.J., Wilson, R.G.: `Selective doping of piezoelectric crystals by ion implantation', AD693154, Semi-annual Report, 1969.
    80. 80)
      • J.D. Sansbury , J.F. Gibbons . Properties of ion implanted sulphur and carbon in GaAs. Radiation Effects , 3 , 269 - 278
    81. 81)
      • Sherwell, R.J., Raines, J.A., Large, L.N.: `Avalanche multiplication in photosensitive junctions formed by ion implantation', Proc. Int. Conf. Ion Implantation, 1967, Grenoble, p. 641–646.
    82. 82)
      • G.H. Schwuttke , K. Brack , E.F. Gorey , A. Kahan , L.F. Lowe . Resistivity and annealing properties of implanted Si : H+. Radiation Effects , 2 , 103 - 106
    83. 83)
      • W.S. Johnson , J.F. Gibbons . (1969) , Projected Range Statistics in Semiconductors.
    84. 84)
      • R.B. Owen , M.L. Awcock . One and two-dimensional position sensing semiconductor detectors. I.E.E.E. Trans. Nuclear Science , 3 , 290 - 303
    85. 85)
      • Tokuyama, T., Ikeda, T., Tsuchimuto, T.: `Junction structures and electrical properties of silicon n-p-n transistors fabricated by various combinations of diffusion and ion implantation', Proc. 4th Microelectronics Congress, 1970, Oldenburg Verlag, , p. 36.
    86. 86)
      • G.H. Schwuttke , K. Brack . Annealing of high energy ion implantation damage in single crystal silicon. Trans. Metallurg. Soc. AIME , 3 , 475 - 482
    87. 87)
      • Oosthoek, D.P., den Boer, J.A., Hofker, W.K.: `The thermal properties of high-value gallium and boron-implanted resistors in silicon', Proc. European Conf. Ion Implantation, 1970, Peter Peregrinus Ltd., , p. 88–91.
    88. 88)
      • K.E. Manchester . Getting dopants on the beam is a long term project. Electronics , 116 - 117
http://iet.metastore.ingenta.com/content/journals/10.1049/ree.1972.0044
Loading

Related content

content/journals/10.1049/ree.1972.0044
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address