The electric and photoresponse characteristics of Ge/ZnSe heterojunctions

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The electric and photoresponse characteristics of Ge/ZnSe heterojunctions

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Wide band gap II-VI compounds deposited epitaxially upon semiconducting substrates have possible applications as solid-state infra-red detectors and imaging devices. The Ge/ZnSe heterojunction has been prepared by vacuum evaporation of epitaxial layers of zinc selenide on to orientated, single crystal, p-type, germanium substrates. Measurements have been made of the electrical characteristics, capacitance properties and photoresponse of these junctions. From these measurements a realistic band model has emerged involving intrinsic and extrinsic defects present in the bulk and interfacial region of the zinc selenide. The data presented suggest that a Mott-type barrier rather than a Schottky barrier is present at the germanium-zinc selenide interface. Techniques are described for reducing the magnitude of this Mott barrier and the resulting change in the physical properties and band structure are discussed.

Inspec keywords: elemental semiconductors; semiconductor junctions; germanium; zinc compounds; band structure; photoelectromagnetic effects; photodetectors

Other keywords: capacitance; photoresponse; Ge-ZnSe heterojunctions; band model: Mott type barrier

Subjects: Junction and barrier diodes; Electrical properties of interfaces; Photodetectors; Semiconductor junctions and interfaces; Photoconduction and photovoltaic effects; photodielectric effects; Semiconductor junctions

References

    1. 1)
      • A.J. Fink . (1963) The Inorganic Index to the Powder Diffraction File, American Soc. Testing Materials.
    2. 2)
      • W. Schottky . Z. Physik.
    3. 3)
      • L. Solymar , D. Walsh . (1970) , Lectures on the Electrical Properties of Materials.
    4. 4)
      • N.F. Mott . The theory of crystal rectifiers. Proc. Roy. Soc., A , 27 - 38
    5. 5)
      • J.T. Calow , S.J.T. Owen , P.W. Webb . The growth and electrical characteristics of epitaxial layers of zinc selenide on germanium. Phys. Stat. Sol. , 295 - 303
    6. 6)
      • C. Kittel . (1968) , Introduction to Solid State Physics.
    7. 7)
      • H.J. Hovel . (1970) Switching and memory in ZnSe-Ge heterojunctions, I.E.E.E. Device Research Conference.
    8. 8)
      • H.J. Hovel , A.G. Milnes . The ZnSe-Ge heterojunctiontransistor. I.E.E.E. Transactions on Electron Devices , 766 - 774
    9. 9)
      • M. Aven , J.S. Prener . (1967) , The Physics and Chemistry of II-VI Compounds.
    10. 10)
      • B.A. Joyce , R.R. Bradley , G.R. Booker . A study of nucleation in chemically grown silicon films using molecular beam techniques. Phil. Mag. , 1163 - 1167
    11. 11)
      • B.E. Watts , R.R. Bradley , B.A. Joyce , G.R. Booker . Nucleation rate measurements and the effect of oxygen on epitaxial growth behaviour. Phil. Mag. , 1167 - 1187
    12. 12)
      • H.J. Hovel , A.G. Milnes . The electrical characteristics of n ZnSe -pGe heterodiodes. Int. J. Electronics , 201 - 218
    13. 13)
      • J.T. Calow , S.J.T. Owen , P.W. Webb . (1967) , The Ge/ZnSe Heterojunction.
    14. 14)
      • E.O. Kane . Theory of photoelectric emission from semiconductors. Phys. Rev. , 131 - 141
    15. 15)
      • S. Wang . (1966) , Solid State Electronics.
    16. 16)
      • Zulegg, R., and Senkovits, E. J., Abstract 95, Spring Meeting Electrochem. Soc., 1963..
    17. 17)
      • N. Ashcroft , D. Mermin . (1976) , Solid State Physics.
    18. 18)
      • T. Yamoto . Growth of the Ge/ZnSe heterojunction with an iodine disproportionation technique. Japanese J. Appl. Phys.
    19. 19)
      • Calow, J.T.: `The ZnSe-Ge Heterojunction', 1970, Ph.D. Thesis, University of Nottingham.
    20. 20)
      • A. Many , Y. Goldstein , N.B. Grover . (1965) , Semiconductor Surfaces.
    21. 21)
      • W. Schottky . (1939) Z. Physik.
    22. 22)
      • N.F. Mott , R.W. Gurney . (1940) , Electronic Processes in Ionic Crystals.
    23. 23)
      • M.A. Lampert . Simplified theory of space charge limited currents in an insulator with traps. Phys. Rev. , 1648 - 1656
    24. 24)
      • H.K. Henisch . (1957) , Rectifying Semiconducting Contacts.
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