Theory and experiments of semiconductor directional magnetic sensor

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Theory and experiments of semiconductor directional magnetic sensor

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Detailed theory and experimental results are described for a semiconductor directional magnetic sensor which shows a very high sensitivity in one direction of a magnetic field but a negligibly small sensitivity in the other. This is based on the combination of the Hall effect and the magnetoresistive effect in a piece of high-mobility semiconductor. A theory of the geometrical effect on the characteristics has been developed for a rectangular 3-terminal element by using conformal transformations. Experimental results on the InSb sensor agree well with the theoretical results, and thus a design principle of the sensor is established.

Inspec keywords: magnetoresistance; Hall effect transducers

Other keywords: design principle; semiconductor directional magnetic sensor; conformal transformations; Hall effect; theory; InSb sensor; experiments; magnetoresistive effect

Subjects: Bulk effect devices; Sensing devices and transducers

References

    1. 1)
      • R.F. Wick . Solution of the field problem of the germanium gyrator. J. Appl. Phys. , 741 - 756
    2. 2)
      • C. Hilsum , A.C. Rose-Innes . (1961) , Semiconducting III-V compounds.
    3. 3)
      • H.H. Wieder . (1971) , Hall generators and magnetoresistors.
    4. 4)
      • H. Lippmann , F. Kuhrt . Der Geometriceeinfluss auf den transversalen magnetischen Widerstandseffekt bei rechteckförmigen Halbleiterplatten und Der Geometrieeinfluss auf den Hall-Effekt bei rechteckigen Halbleiterplatten. Z. Naturforsch. , 462 - 483
    5. 5)
      • H. Weiss . (1969) , Structure and application of galvanomagnetic devices.
    6. 6)
      • E. Cohen . Recent development of Hall effect devices and applications. Bull. Electrotech. Lab. , 50 - 76
    7. 7)
      • M. Nalecz , I. Zawicki , M. Nalecz . (1974) Application of the Hall effect, Trends in control components.
    8. 8)
      • S. Kataoka , M. Nalecz . (1974) Magnetoresistive devices, Trends in control components.
    9. 9)
      • S. Kataoka . Multiplying action of the magnetoresistance effect in semiconductors and its application to power measurements. Proc. IEE , 11 , 1937 - 1947
    10. 10)
      • S. Kataoka , H. Yamada , Y. Sugiyama , H. Fujisada . New galvanomagnetic devices with directional sensitivity. Proc. IEEE
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