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access icon free Characteristics of j.f.e.t.s. taking the separation of gate electrode from the source and drain electrodes into account

The performance characteristics of a junction field-effect transistor (j.f.e.t.) are evaluated considering the presence of the gap between the gate electrode and the source and drain terminals. It is concluded that the effect of the gap is to demand a higher drain voltage to maintain the same drain current. So long as the device is operated at the same drain current, the presence of the gap does not change the performance of the device as an amplifier. The nature of the performance of the device as a variable resistor is not affected by the gap if it is less than or equal to the physical height of the channel. For gap lengths larger than the channel height, the effect of the gap is to add a series resistance in the drain.

References

    1. 1)
      • W. Shockley . A unipolar field-effect transistor. Proc. IRE
    2. 2)
      • J.R. Hauser . Characteristics of junction field effect devices with small channel length to width ratios. Solid-State Electron.
    3. 3)
      • A.B. Grebene . Parasitic bulk resistances in junction gate FET's. Proc. IEEE
http://iet.metastore.ingenta.com/content/journals/10.1049/piee.1977.0105
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