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Generation-recombination noise of junction-gate field-effect transistors

Generation-recombination noise of junction-gate field-effect transistors

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The generation-recombination noise of junction-gate field-effect transistors is calculated taking into account the variable mobility. The field dependence of mobility suggested by Trofimenkoff is used, and the resultant spectral intensity of the drain-noise fluctuations shows no signs of a logarithmic singularity at saturation. The need for any cutoff procedure to remove the logarithmic singularity at saturation is therefore removed, and it is thus an improvement over earlier methods.

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