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Generation-recombination noise of junction-gate field-effect transistors

Generation-recombination noise of junction-gate field-effect transistors

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The generation-recombination noise of junction-gate field-effect transistors is calculated taking into account the variable mobility. The field dependence of mobility suggested by Trofimenkoff is used, and the resultant spectral intensity of the drain-noise fluctuations shows no signs of a logarithmic singularity at saturation. The need for any cutoff procedure to remove the logarithmic singularity at saturation is therefore removed, and it is thus an improvement over earlier methods.

Inspec keywords: field effect transistors; noise

Other keywords: generation recombination noise; variable mobility; junction gate field effect transistors

Subjects: Other field effect devices

References

    1. 1)
      • H.E. Halladay , A. van der Ziel . Field-dependent mobility effects in the excess noise of junction-gate field-effect transistors. IEEE Trans. , 110 - 111
    2. 2)
      • D.M. Caughey , R.E. Thomas . Carrier mobilities in silicon empirically related to doping and field. Proc. IEEE , 2192 - 2193
    3. 3)
      • R.S.C. Cobbold . (1970) , Theory and applications of field-effect transistors.
    4. 4)
      • F.N. Trofimenkoff . Field-dependent mobility-analysis of the field-effect transistor. Proc. IEEE , 1765 - 1766
    5. 5)
      • G.C. Dacey , I.M. Ross . The field-effect transistor. Bell Syst. Tech. J. , 1149 - 1189
    6. 6)
      • A.C. Prior . The field dependence of carrier mobility in silicon and germanium. J Phys. Chem. Solids , 175 - 180
    7. 7)
      • A. van der Ziel . Gate noise in field-effect transistors at moderately high frequencies. Proc. IEEE , 461 - 467
    8. 8)
      • J.F. Gibbons . Papers on carrier drift velocities in silicon at high electric field strengths. IEEE Trans.
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